公开(公告)号：US10193309B1

公开(公告)日：2019-01-29

申请号：US15612897

申请日：2017-06-02

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Paul Rudy ,  Po Shan Hsu ,  Alexander Sztein

IPC: H01S5/34 ,  H01S5/343 ,  H01S5/22 ,  H01S5/042 ,  H01S5/02

Abstract: A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member.

公开(公告)号：US10141714B2

公开(公告)日：2018-11-27

申请号：US15675532

申请日：2017-08-11

Applicant: Soraa Laser Diode, Inc.

Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

IPC: H01L21/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/32 ,  H01S5/343

Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

公开(公告)号：US10122148B1

公开(公告)日：2018-11-06

申请号：US15798213

申请日：2017-10-30

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Mathew C. Schmidt ,  Yu-Chia Chang

IPC: H01S5/042 ,  H01S5/34 ,  H01S5/22 ,  H01S5/20 ,  H01S5/065 ,  H01L33/00 ,  H01S5/343 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/40 ,  H01S5/32

Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

公开(公告)号：US20180316160A1

公开(公告)日：2018-11-01

申请号：US16014010

申请日：2018-06-21

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy ,  Eric Goutain ,  Troy Trottier ,  Melvin McLaurin ,  James Harrison ,  Sten Heikman ,  Michael Cantore

IPC: H01S5/32 ,  H01S5/00 ,  H01S5/022 ,  H01S5/10 ,  H01S5/22

CPC classification number: F21V29/70 ,  F21Y2115/30 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01S5/005 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/02248 ,  H01S5/02296 ,  H01S5/2201 ,  H01S5/3203 ,  H01S5/34333 ,  H01L2924/00014

Abstract: The embodiments described herein provide a device and method for an integrated white colored electromagnetic radiation source using a combination of laser diode excitation sources based on gallium and nitrogen containing materials and light emitting source based on phosphor materials. A violet, blue, or other wavelength laser diode source based on gallium and nitrogen materials may be closely integrated with phosphor materials, such as yellow phosphors, to form a compact, high-brightness, and highly-efficient, white light source. The phosphor material is provided with a plurality of scattering centers scribed on an excitation surface or inside bulk of a plate to scatter electromagnetic radiation of a laser beam from the excitation source incident on the excitation surface to enhance generation and quality of an emitted light from the phosphor material for outputting a white light emission either in reflection mode or transmission mode.

公开(公告)号：US10090644B2

公开(公告)日：2018-10-02

申请号：US15820047

申请日：2017-11-21

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Mathew Schmidt ,  Christiane Poblenz

IPC: H01S5/34 ,  H01S5/343 ,  H01S5/20 ,  H01S5/227 ,  B82Y20/00 ,  H01S5/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/32 ,  H01S5/40

Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.

公开(公告)号：US20180159302A1

公开(公告)日：2018-06-07

申请号：US15820160

申请日：2017-11-21

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

IPC: H01S5/40 ,  H01S5/323 ,  H01L33/00 ,  H01L23/00 ,  H01S5/02

CPC classification number: H01S5/4093 ,  H01L24/83 ,  H01L24/95 ,  H01L33/0045 ,  H01L33/0075 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/16152 ,  H01S5/0203 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/4025 ,  H01L2924/00 ,  H01L2224/45099

Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

公开(公告)号：US20180059525A1

公开(公告)日：2018-03-01

申请号：US15796568

申请日：2017-10-27

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy

IPC: G03B21/20 ,  F21S8/10 ,  H01S5/343 ,  H04N9/31 ,  H04N13/04 ,  F21K9/64

CPC classification number: G03B21/2066 ,  F21K9/64 ,  F21S41/14 ,  F21S41/16 ,  G03B21/2033 ,  G03B21/204 ,  H01S5/0071 ,  H01S5/22 ,  H01S5/34333 ,  H01S5/4012 ,  H01S5/4093 ,  H04N9/3129 ,  H04N9/3161 ,  H04N13/334 ,  H04N13/337 ,  H04N13/363

Abstract: The present invention is directed to a laser light source for a vehicle.

公开(公告)号：US09887517B1

公开(公告)日：2018-02-06

申请号：US15289914

申请日：2016-10-10

Applicant: SORAA LASER DIODE, INC.

Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass ,  Thiago P. Melo ,  Mathew C. Schmidt

IPC: H01S5/02 ,  H01S5/343 ,  H01S5/227 ,  H01S5/22 ,  H01S5/30

CPC classification number: H01S5/34333 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0425 ,  H01S5/1082 ,  H01S5/2201 ,  H01S5/2275 ,  H01S5/3063 ,  H01S5/3202 ,  H01S2301/173 ,  H01S2304/12

Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

公开(公告)号：US09871350B2

公开(公告)日：2018-01-16

申请号：US15180737

申请日：2016-06-13

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

IPC: H01L21/00 ,  H01S5/40 ,  H01L33/00 ,  H01S5/323 ,  H01L23/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/22

CPC classification number: H01S5/4093 ,  H01L24/83 ,  H01L24/95 ,  H01L33/0045 ,  H01L33/0075 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01S5/0203 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/4025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

公开(公告)号：US09810383B2

公开(公告)日：2017-11-07

申请号：US14743878

申请日：2015-06-18

Applicant: Soraa Laser Diode, Inc.

Inventor： Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Hua Huang

IPC: H01S5/022 ,  F21K99/00 ,  G02B6/27 ,  H01S5/00 ,  H01S5/024 ,  H01S5/22 ,  H01S5/343 ,  H01S5/40 ,  B82Y20/00 ,  G02B6/42 ,  F21V29/71 ,  F21V29/83 ,  F21V9/16 ,  F21V23/06 ,  F21V8/00 ,  H01S5/323 ,  F21K9/62 ,  F21K9/64 ,  G02B6/26 ,  H01S5/028 ,  H01S5/042 ,  F21Y115/30 ,  F21Y115/10 ,  F21Y101/00

CPC classification number: F21K9/60 ,  B82Y20/00 ,  F21K9/62 ,  F21K9/64 ,  F21V9/30 ,  F21V23/06 ,  F21V29/713 ,  F21V29/83 ,  F21Y2101/00 ,  F21Y2115/10 ,  F21Y2115/30 ,  G02B6/0005 ,  G02B6/26 ,  G02B6/27 ,  G02B6/4214 ,  G02B6/4249 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01S5/0021 ,  H01S5/005 ,  H01S5/0085 ,  H01S5/0092 ,  H01S5/02208 ,  H01S5/02224 ,  H01S5/02236 ,  H01S5/02252 ,  H01S5/02276 ,  H01S5/02284 ,  H01S5/02292 ,  H01S5/02469 ,  H01S5/02476 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/3235 ,  H01S5/34333 ,  H01S5/4012 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/4056 ,  H01S2301/14 ,  H01S2304/04

Abstract: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.