公开(公告)号：US07906429B2

公开(公告)日：2011-03-15

申请号：US11825678

申请日：2007-07-09

申请人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

发明人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

IPC分类号： H01L21/4763

CPC分类号： H01L33/62 ,  C23C14/165 ,  C23C14/3414 ,  H01L21/2855 ,  H01L23/552 ,  H01L27/124 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1010 dyn/cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

摘要翻译： 实现了具有良好的TFT特性的半导体器件。 通过使用高纯度靶作为靶，使用单一气体氩（Ar）作为溅射气体，将基板温度设定为300℃以下，将溅射气体压力设定为1.0Pa〜3.0 Pa时，膜的膜应力为-1×1010dyn / cm 2〜1×1010dyn / cm 2。 通过这样使用导电膜，其中膜中所含的钠的量等于或小于0.3ppm，优选等于或小于0.1ppm，并且具有低电阻率（等于或小于40μ＆OHgr· cm），作为栅极布线材料和TFT的其它布线的材料，可以提高设置有TFT的半导体器件的操作性能和可靠性。

公开(公告)号：US07858411B2

公开(公告)日：2010-12-28

申请号：US12259748

申请日：2008-10-28

申请人： Shunpei Yamazaki ,  Masakazu Murakami ,  Toru Takayama ,  Junya Maruyama

发明人： Shunpei Yamazaki ,  Masakazu Murakami ,  Toru Takayama ,  Junya Maruyama

IPC分类号： H01L33/00

CPC分类号： H01L27/1218 ,  G02F1/133305 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/1341 ,  G02F1/1368 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1262 ,  H01L27/1266 ,  H01L27/156 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0024 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/56 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2924/30105 ,  H01L2924/3025 ,  Y02E10/549

摘要： The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

摘要翻译： 本发明的目的是提供一种用于制造半导体器件的方法，该半导体器件具有以曲率结合到基底材料上的剥离层。 特别地，本发明的目的是提供一种用于制造具有曲率的显示器的方法，更具体地说，提供一种发光器件，该发光器件具有键合到具有曲率的基底材料的OLED。 对原来具有曲率和弹性的支撑件施加外力，并且将支撑件结合到形成在基板上的剥离层。 然后，当基板被剥离时，支撑件通过恢复力返回到原始形状，并且剥离层也沿着支撑件的形状弯曲。 最后，原来具有曲率的转印体被粘合到剥离层上，然后完成具有所需曲率的装置。

公开(公告)号：US07776712B2

公开(公告)日：2010-08-17

申请号：US11799713

申请日：2007-05-02

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideomi Suzawa ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hideomi Suzawa ,  Toru Takayama

IPC分类号： H01L21/425

CPC分类号： H01L29/78621 ,  G02F1/1368 ,  G02F2001/136245 ,  G02F2202/105 ,  H01L21/28061 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78624 ,  H01L29/78627 ,  H01L2029/7863

摘要： There is provided a crystalline TFT in which reliability comparable to or superior to a MOS transistor can be obtained and excellent characteristics can be obtained in both an on state and an off state. A gate electrode of the crystalline TFT is formed of a laminate structure of a first gate electrode made of a semiconductor material and a second gate electrode made of a metal material. An n-channel TFT includes an LDD region, and a region overlapping with the gate electrode and a region not overlapping with the gate electrode are provided, so that a high electric field in the vicinity of a drain is relieved, and at the same time, an increase of an off current is prevented.

摘要翻译： 提供了一种晶体TFT，其中可以获得与MOS晶体管相当或优于其的可靠性，并且可以在导通状态和截止状态两者中获得优异的特性。 晶体TFT的栅电极由由半导体材料制成的第一栅电极和由金属材料制成的第二栅电极的叠层结构形成。 n沟道TFT包括LDD区域和与栅电极重叠的区域和与栅电极不重叠的区域，从而释放漏极附近的高电场，并且同时 ，防止了关断电流的增加。

公开(公告)号：US07723218B2

公开(公告)日：2010-05-25

申请号：US11102727

申请日：2005-04-11

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Mitsunori Sakama ,  Hisashi Abe ,  Hiroshi Uehara ,  Mika Ishiwata

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Mitsunori Sakama ,  Hisashi Abe ,  Hiroshi Uehara ,  Mika Ishiwata

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01J37/32477 ,  C23C16/4401 ,  C23C16/5096 ,  Y10S438/905

摘要： In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.

摘要翻译： 在等离子体CVD装置中，防止了不必要的放电，例如电弧放电，由于附着在反应室上的膜的剥离引起的颗粒的量减少，并且在该设备的工作时间内有助于生产的时间的百分比增加 同时保持设备的扩大和易于加工的性能。 等离子体CVD装置被构造成使得在具有电源113，真空排气装置118和反应气体引入管114的导电反应室104中，在由电极111围绕的空间中产生等离子体115，衬底保持器 112和绝缘体120。

公开(公告)号：US07719014B2

公开(公告)日：2010-05-18

申请号：US12182236

申请日：2008-07-30

申请人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Toru Takayama

IPC分类号： H01L29/18

CPC分类号： H01L27/3211 ,  H01L21/67207 ,  H01L27/3209 ,  H01L27/3218 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3281 ,  H01L51/5036 ,  H01L51/504 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  H01L2251/5315

摘要： A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

摘要翻译： 提供了具有高清晰度，高开口率和高可靠性的发光器件。 本发明通过有意形成层叠部分，利用红色，绿色和蓝色发光的全色平板显示器实现了高清晰度和高开口率，其中相邻发光元件的不同有机化合物层的部分彼此重叠 ，而不依赖于形成有机化合物层的方法或成膜精度。

公开(公告)号：US07629617B2

公开(公告)日：2009-12-08

申请号：US11585954

申请日：2006-10-25

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

IPC分类号： H01L27/15

CPC分类号： H01L27/3244 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3276 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/5256 ,  H01L51/5259 ,  H01L51/5284 ,  H01L2227/323

摘要： The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a second substrate. The light-emitting device is formed over a first insulating layer made of an organic compound and a second insulating layer made of an inorganic insulating material containing nitrogen formed on the surface of the first insulating layer. In an outer circumferential part of a display area formed by the light-emitting element, a shield pattern surrounding the display area is formed by metal wiring on the second insulating layer, and the first substrate and the second substrate are fixed to each other with an adhesive resin formed in contact with the shield pattern.

摘要翻译： 提高由TFT和发光元件的组合构成的发光装置的可靠性。 在第一基板和第二基板之间形成发光元件。 发光器件形成在由有机化合物制成的第一绝缘层和由形成在第一绝缘层的表面上的含氮的无机绝缘材料制成的第二绝缘层上。 在由发光元件形成的显示区域的外周部分中，通过第二绝缘层上的金属布线形成围绕显示区域的屏蔽图案，并且第一基板和第二基板被固定在一起 形成为与屏蔽图案接触的粘合树脂。

公开(公告)号：US20090291516A1

公开(公告)日：2009-11-26

申请号：US12477966

申请日：2009-06-04

申请人： Toru Takayama ,  Junya Maruyama ,  Shunpei Yamazaki

发明人： Toru Takayama ,  Junya Maruyama ,  Shunpei Yamazaki

IPC分类号： H01L21/50

CPC分类号： H01L27/1266 ,  B32B7/06 ,  B32B43/006 ,  B32B2310/0843 ,  B32B2457/08 ,  B32B2457/14 ,  G02F1/1368 ,  G02F2001/13613 ,  H01L21/3221 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/78663 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/529 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  Y10S438/977 ,  Y10T156/1137 ,  Y10T156/1939

摘要： There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.

摘要翻译： 提供了能够防止对被剥离层的损伤的剥离方法。 因此，不仅可以以高产率在整个表面上剥离具有小面积的被剥离层，而且可以在整个表面上剥离具有大面积的待剥离层。 在剥离之前进行用于部分降低第一材料层（11）和第二材料层（12）之间的接触性能（激光照射，压力施加等）的处理，然后通过物理手段进行剥离。 因此，能够容易地在第二材料层（12）的内部或其界面进行分离。

公开(公告)号：US07518692B2

公开(公告)日：2009-04-14

申请号：US10739084

申请日：2003-12-19

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Mai Akiba

IPC分类号： G02F1/1339 ,  G02F1/1345

CPC分类号： G06K19/07749 ,  G06K19/077 ,  G06K19/07703 ,  G06Q20/341 ,  G06Q20/40145 ,  G07F7/1008

摘要： It is an object of the present invention to provide a highly sophisticated functional card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. A card comprising a display device and a thin film integrated circuit; wherein driving of the display device is controlled by the thin film integrated circuit; a semiconductor element used for the thin film integrated circuit and the display device is formed by using a polycrystalline semiconductor film; the thin film integrated circuit and the display device are sealed with a resin between a first substrate and a second substrate of the card; and the first substrate and the second substrate are plastic substrates.

摘要翻译： 本发明的目的是提供一种高度复杂的功能卡，其可以通过防止诸如改变脸部照片的伪造，以及显示其他图像以及脸部照片来确保安全性。 一种包括显示装置和薄膜集成电路的卡; 其中所述显示装置的驱动由所述薄膜集成电路控制; 通过使用多晶半导体膜形成用于薄膜集成电路的半导体元件和显示装置; 薄膜集成电路和显示装置用卡在第一基板和第二基板之间的树脂密封; 并且第一基板和第二基板是塑料基板。

公开(公告)号：US20090091014A1

公开(公告)日：2009-04-09

申请号：US12249523

申请日：2008-10-10

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yasuyuki Arai ,  Noriko Shibata

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Yasuyuki Arai ,  Noriko Shibata

IPC分类号： G09G3/36

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L27/1214 ,  H01L2221/68368 ,  H01L2224/05172 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/07811 ,  H01L2924/00 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05184

摘要： To provide a thin film device which becomes possible to be formed in the portion which has been considered impossible to be provided with such device by the conventional technique, and to provide a semiconductor device which occupies small space and which has high shock resistance and flexibility, a device formation layer with a thickness of at most 50 μm which was peeled from a substrate by a transfer technique is transferred to another substrate, hence, a thin film device can be formed over various substrates. For instance, a semiconductor device can be formed so as to occupy small space by pasting a thin film device which is transferred to a flexible substrate onto a rear surface of a substrate of a panel, by pasting directly a thin film device onto a rear surface of a substrate of a panel, or by transferring a thin film device to an FPC which is pasted onto a substrate of a panel.

摘要翻译： 为了提供可以在通过常规技术被认为不可能设置这种器件的部分中形成的薄膜器件，并且提供占据小空间并且具有高抗冲击性和柔性的半导体器件， 通过转印技术将从基板剥离的厚度最多为50μm的元件形成层转移到另一基板，因此可以在各种基板上形成薄膜器件。 例如，可以通过将薄膜器件直接粘贴到背面上来形成半导体器件，以便占据较小的空间，该薄膜器件被传送到柔性衬底到面板的衬底的背面上 或者通过将薄膜器件转移到贴在面板的基板上的FPC上。

公开(公告)号：US07511380B2

公开(公告)日：2009-03-31

申请号：US11420390

申请日：2006-05-25

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yumiko Ohno

IPC分类号： H01L23/48

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L24/29 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/1214 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83205 ,  H01L2224/838 ,  H01L2224/83805 ,  H01L2224/83851 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0665 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01003 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01022 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05599

摘要： A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer with a thickness of at most 50 μm which is separated from a substrate into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50 μm which is separated from another substrate to the above device formative layer, and, repeating such transferring process.

摘要翻译： 通过转印技术提供具有形成为集成薄膜的多个器件形成层的半导体芯片。 根据本发明，可以通过转移厚度最多为50um的器件形成层，通过技术将其从衬底分离成另一衬底而制成形成薄膜并且高度集成的半导体芯片 用于转移和转移厚度至多为50um的另一器件形成层，其从另一衬底分离到上述器件形成层，并且重复该转印过程。