公开(公告)号：US20150020735A1

公开(公告)日：2015-01-22

申请号：US14341450

申请日：2014-07-25

Applicant: Peter F. Vandermeulen

Inventor： Peter F. Vandermeulen

IPC: H01J37/32

CPC classification number: H01J37/32229 ,  C23C16/511 ,  C23C16/513 ,  H01J37/05 ,  H01J37/08 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32669 ,  H01J2237/057 ,  H01J2237/0817 ,  H01J2237/3323 ,  H01P3/12 ,  H01P3/127 ,  H01Q21/0043

Abstract: This application is directed to an apparatus for creating microwave radiation patterns for an object detection system. The apparatus includes a waveguide conduit having first slots at one side of the conduit and corresponding second slots at an opposite side of the conduit. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of first slots. A plunger is moveably positioned in the waveguide conduit from one end thereof. The plunger allows the waveguide conduit to be tuned to generally optimize the power of the microwaves exiting the first slots. Secondary plungers are each fitted in one of the second slots to independently tune or detune microwave emittance through a corresponding first slot.

公开(公告)号：US20150015139A1

公开(公告)日：2015-01-15

申请号：US14326649

申请日：2014-07-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazushi KANEKO ,  Toshihiko IWAO ,  Satoru KAWAKAMI

IPC: H01J37/32

CPC classification number: H01J37/32311 ,  H01J37/244 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32211 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/32238 ,  H01J37/32266 ,  H01J37/32935 ,  H01J37/3299

Abstract: A microwave plasma processing apparatus includes a processing space; a microwave generator which generates microwaves for generating a plasma; a distributor which distributes the microwaves to a plurality of waveguides; an antenna installed in a processing container to seal the processing space and to radiate microwaves distributed by the distributor, to the processing space; and a monitor unit configured to monitor a voltage of each of the plurality of waveguides. A control unit acquires a control value of a distribution ratio of the distributor, which corresponds to a difference between a voltage monitor value of the monitor unit and a predetermined voltage reference value, from a storage unit that stores the difference and the control value corresponding to each other. The control unit is also configured to control the distribution ratio of the distributor, based on the acquired control value.

Abstract translation: 微波等离子体处理装置包括处理空间; 产生产生等离子体的微波的微波发生器; 将微波分配到多个波导的分配器; 安装在处理容器中以密封处理空间并辐射由分配器分布的微波的天线到处理空间; 以及监视器单元，被配置为监视所述多个波导中的每一个的电压。 控制单元从存储该差异的存储单元和对应于该监视单元的控制值获取对应于监视单元的电压监视值和预定电压基准值之间的差异的分配器的分配比率的控制值 彼此。 控制单元还被配置为基于所获取的控制值来控制分配器的分配比。

公开(公告)号：US20140158302A1

公开(公告)日：2014-06-12

申请号：US14095563

申请日：2013-12-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Tomohito KOMATSU ,  Shigeru KASAI ,  Hiroyuki MIYASHITA ,  Yuki OSADA ,  Akira TANIHARA ,  Yutaka FUJINO

IPC: H01J37/32

CPC classification number: H01J37/3222 ,  H01J37/32201

Abstract: A microwave radiation antenna includes an antenna body having a microwave radiation surface; a processing gas inlet configured to introduce a processing gas into the antenna body; a gas diffusion space configured to diffuse the processing gas in the antenna body; a plurality of gas outlets provided in the antenna body and configured to discharge the processing gas into the chamber; a plurality of slots provided in the antenna body under a state where the slots are separated from the gas diffusion space and the gas outlets; and an annular dielectric member provided in the microwave radiation surface side of the antenna body to cover a slot formation region where the slots are formed. A metal surface wave is formed in the microwave radiation surface by the microwave radiated through the slots and the annular dielectric member and a surface wave plasma is generated by the metal surface wave.

Abstract translation: 微波辐射天线包括具有微波辐射表面的天线体; 处理气体入口，被配置为将处理气体引入到天线体中; 气体扩散空间，其构造成将所述处理气体扩散到所述天线体中; 多个气体出口，其设置在所述天线体中并且被配置为将所述处理气体排出到所述室中; 在槽与气体扩散空间和气体出口分离的状态下设置在天线体中的多个槽; 以及设置在天线体的微波辐射面侧的环状电介质部件，以覆盖形成槽的槽形成区域。 通过微波辐射通过狭缝和环形电介质构成的微波辐射表面形成金属表面波，并通过金属表面波产生表面波等离子体。

公开(公告)号：US20060138099A1

公开(公告)日：2006-06-29

申请号：US10530357

申请日：2003-10-09

Applicant: Tsunehisa Namiki ,  Toshihide Ieki ,  Hideo Kurashima ,  Hajime Inagaki ,  Akira Kobayashi ,  Koji Yamada

Inventor： Tsunehisa Namiki ,  Toshihide Ieki ,  Hideo Kurashima ,  Hajime Inagaki ,  Akira Kobayashi ,  Koji Yamada

IPC: B23K9/00 ,  B23K9/02

CPC classification number: C23C16/515 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/40 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32311

Abstract: A method of forming a metal oxide film by the plasma CVD method and comprising reacting chiefly an organometal by a glow discharge in a low output region and, then, reacting the organometal with an oxidizing gas by the glow discharge in a high-output region to form a metal oxide film on the surface of a plastic substrate via an organic layer. This method forms a thin film having excellent adhesiveness, softness and flexibility on the surface of a plastic substrate relying on the plasma CVD method.

Abstract translation: 通过等离子体CVD法形成金属氧化物膜的方法，其特征在于，在低输出区域中通过辉光放电主要使有机金属反应，然后通过高输出区域的辉光放电使有机金属与氧化性气体反应， 通过有机层在塑料基板的表面上形成金属氧化物膜。 该方法根据等离子体CVD法在塑料基板的表面上形成具有优异的粘合性，柔软性和柔软性的薄膜。

公开(公告)号：US20020043937A1

公开(公告)日：2002-04-18

申请号：US09977951

申请日：2001-10-17

Inventor： Toshio Ogura ,  Masumi Kuga ,  Tomokatsu Oguro ,  Toru Moriike

IPC: H01J025/50 ,  H01J023/36

CPC classification number: H01J37/32201 ,  H01J23/005 ,  H01J23/02 ,  H01J23/20 ,  H01J23/213 ,  H01J23/22 ,  H01J23/48 ,  H01J25/587 ,  H01J2223/05 ,  H01J2223/12 ,  H01J2223/14 ,  H01J2223/15

Abstract: A magnetron has an anode cylinder, a plurality of vanes extending radially inwardly from the anode cylinder, a cathode filament extending along a center axis of the anode cylinder, an output section including an antenna coupled to one of the vanes, and a magnetic circuit section for supplying a magnetic field into the anode cylinder, whereby the magnetron oscillates at a fundamental frequency in a range from 400 MHz to 600 MHz.

Abstract translation: 磁控管具有阳极圆筒，从阳极圆筒径向向内延伸的多个叶片，沿着阳极圆筒的中心轴线延伸的阴极细丝，输出部分，包括耦合到叶片之一的天线和磁路部分 用于向阳极筒提供磁场，由此磁控管以基本频率在400MHz至600MHz的范围内振荡。

公开(公告)号：US12040162B2

公开(公告)日：2024-07-16

申请号：US18330602

申请日：2023-06-07

Applicant: 6K Inc.

Inventor： Michael C. Kozlowski ,  Michael Resnick ,  Pawel Matys

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32201

Abstract: Disclosed herein are systems, methods, and devices processing feed material utilizing an upstream swirl module and composite gas flows. Some embodiments are directed to a microwave plasma apparatus for processing a material, comprising: a first flow module, a second flow module, and a liner.

公开(公告)号：US12018374B2

公开(公告)日：2024-06-25

申请号：US16813175

申请日：2020-03-09

Applicant: DSGI Technologies, Inc.

Inventor： Jeffrey Edward Kowalski

IPC: C23C16/511 ,  C23C16/458 ,  H01J37/32 ,  H01L21/02 ,  H01L21/285

CPC classification number: C23C16/511 ,  C23C16/4588 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32211 ,  H01J37/3222 ,  H01J37/32266 ,  H01J37/32357 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32816 ,  H01L21/02247 ,  H01L21/02274 ,  H01L21/28556 ,  H01J2237/3321

Abstract: Systems and methods of forming a thin film on substrate includes positioning the substrate in a chamber; generating, via a uniform microwave field generator, a microwave field around the substrate; and guiding radicals into the chamber so that plasma is generated about the substrate to form the thin film on the substrate.

公开(公告)号：US20240203699A1

公开(公告)日：2024-06-20

申请号：US18538919

申请日：2023-12-13

Applicant: SEMES CO., LTD.

Inventor： Young Jo JIN ,  Dong Young JANG ,  Yun Sang KIM ,  Min Sung JEON ,  Min Hee HONG ,  Young Seo PARK ,  Jeong Sik KIM

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01J37/32449 ,  H01J37/32201 ,  H01L21/02274 ,  H01L21/67098 ,  H01L21/67248

Abstract: Proposed are a substrate treatment method and a substrate treatment system in which a cooling process with an improved cooling speed and an improved cooling efficiency is applied in a substrate treatment process using an upper heat source. A substrate treatment method etching a substrate at an atomic layer level by using a processing unit and a thermal treatment unit may be provided. The substrate treatment method includes a surface treatment process in which a substrate surface is modified in the processing unit, a desorption process in which the substrate surface-treated in the processing unit is heated by the upper heat source in the thermal treatment unit, thereby generating a desorption reaction on the substrate surface, and a temperature adjustment process in which the substrate is cooled by a cooling plate in the thermal treatment unit, thereby maintaining a temperature of the substrate at a set temperature range.

公开(公告)号：US20240014010A1

公开(公告)日：2024-01-11

申请号：US17763301

申请日：2021-02-19

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Tetsuo KAWANABE ,  Makoto SATAKE ,  Motohiro TANAKA

IPC: H01J37/32

CPC classification number: H01J37/32247 ,  H01J37/32229 ,  H01J37/3244 ,  H01J37/32201 ,  H01J2237/3343 ,  H01L21/67069

Abstract: A plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing, including, at an upper side therein, a dielectric plate, through which microwaves are transmitted; a radio frequency power supply which supplies radio frequency power for the microwaves; a cavity resonator which resonates microwaves transmitted from the radio frequency power supply through a waveguide and is placed above the dielectric plate; and a magnetic field forming mechanism which forms a magnetic field in the processing chamber. The plasma processing apparatus further includes: a ring-shaped conductor placed inside the cavity resonator; and a circular conductor which is placed inside the cavity resonator and placed in an opening at the center of the ring-shaped conductor.

公开(公告)号：US20240014007A1

公开(公告)日：2024-01-11

申请号：US17435509

申请日：2020-08-27

Applicant: Hitachi High-Tech Corporation

Inventor： Norihiko Ikeda ,  Kazuya Yamada

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32146 ,  H01J37/32201 ,  H01J37/32311 ,  H01J37/32293 ,  H01J37/32128 ,  H01J2237/3343

Abstract: A plasma processing apparatus includes: a processing chamber; a first radio frequency power supply configured to supply a first radio frequency power; a second radio frequency power supply configured to supply a second radio frequency power; and a control device configured to, when the first radio frequency power is modulated by a first waveform having a first period and a second period adjacent to the first period, and the second radio frequency power supply is modulated by a second waveform having a period A and a period B, control the second radio frequency power supply such that each second radio frequency power in the period A is supplied in the first period and the second period, in which an amplitude in the second period is smaller than an amplitude in the first period, and an amplitude in the period A is larger than an amplitude in the period B.