Abstract:
Systems and methods for testing semiconductor wafers using a wafer translator are disclosed herein. In one embodiment, an apparatus for testing semiconductor dies on a wafer includes a wafer translator having a wafer-side facing toward the wafer, and an inquiry-side facing away from the wafer-side. The wafer has an active side facing the translator. The apparatus includes a peripheral seal configured to seal a space between the wafer translator and the wafer, and a valve in a fluidic communication with the space between the wafer translator and the wafer.
Abstract:
A workpiece handling module including a first housing member and a second housing member pivotally movable relative to the first member forming a housing having an access side and a second side opposite the access side and side walls, a first portion of the side walls is carried by the first member and a second portion of the side walls is carried by the second member, and at least one of the first and second housing members includes at least one sealable opening for allowing ingress and egress of workpieces to and from an interior chamber formed by the first and second housing members in a closed configuration, and the second portion of the side walls adjacent the access side and carried by the second member is greater than the first portion of the side walls adjacent the access side and carried by the first member.
Abstract:
A workpiece transport device for transporting a workpiece having a substrate layer and a layer to be processed on a portion of the substrate layer is provided. This workpiece transport device has a workpiece holding mechanism arranged to operate so as to hold and release the workpiece. The workpiece holding mechanism has at least one tapered workpiece holding surface on which the substrate layer of the workpiece is held in a state where the layer to be processed is positioned below the substrate layer. The tapered workpiece holding surface is formed so that a clearance equal to or larger than a predetermined distance R exists between the workpiece holding surface and the layer to be processed of the workpiece when the workpiece is held by the workpiece holding mechanism.
Abstract:
A substrate processing system including a load port module configured to hold at least one substrate container for storing and transporting substrates, a substrate processing chamber, an isolatable transfer chamber capable of holding an isolated atmosphere therein configured to couple the substrate processing chamber and the load port module, and a substrate transport mounted at least partially within the transfer chamber having a drive section fixed to the transfer chamber and having a SCARA arm configured to support at least one substrate, the SCARA arm being configured to transport the at least one substrate between the at least one substrate container and the processing chamber with but one touch of the at least one substrate, wherein the SCARA arm comprises a first arm link, a second arm link, and at least one end effector serially pivotally coupled to each other, where the first and second arm links have unequal lengths.
Abstract:
A substrate processing apparatus is provided. The apparatus has a casing, a low port interface and a carrier holding station. The casing has processing devices within for processing substrates. The load port interface is connected to the casing for loading substrates into the processing device. The carrier holding station is connected to the casing. The carrier holding station is adapted for holding at least one substrate transport carrier so the at least one substrate transport carrier is capable of being coupled to the load port interface without lifting the at least one substrate transport carrier off the carrier holding station. The carrier holding station is arranged to provide a substantially simultaneous swap section for substantially simultaneous replacement of the substrate transport carrier from the carrier holding station.
Abstract:
Reduction of solar wafer LID by exposure to continuous or intermittent High-Intensity full-spectrum Light Radiation, HILR, by an Enhanced Light Source, ELS, producing 3-10 Sols, optionally in the presence of forming gas or/and heating to within the range of from 100° C.-300° C. HILR is provided by ELS modules for stand-alone bulk/continuous processing, or integrated in wafer processing lines in a High-Intensity Light Zone, HILZ, downstream of a wafer firing furnace. A finger drive wafer transport provides continuous shadowless processing speeds of 200-400 inches/minute in the integrated furnace/HILZ. Wafer dwell time in the peak-firing zone is 1-2 seconds. Wafers are immediately cooled from peak firing temperature of 850° C.-1050° C. in a quench zone ahead of the HILZ-ELS modules. Dwell in the HILZ is from about 10 sec to 5 minutes, preferably 10-180 seconds. Intermittent HILR exposure is produced by electronic control, a mask, rotating slotted plate or moving belt.
Abstract:
A semiconductor manufacturing apparatus includes: a collet which sucks a semiconductor chip having a main surface on which a bump is formed, and an actuator which transfers the sucked semiconductor chip onto a mounting substrate or another semiconductor chip by driving the collet. A recessed portion for avoiding a contact between the collet and the bump is formed on a suction surface of the collet which sucks the semiconductor chip.
Abstract:
The intent of this invention is to provide an apparatus for substrate transportation that is to carry the substrate without any mechanical contact when the substrate is required to be transported in various manufacturing processes including semiconductor, display and the like.
Abstract:
A substrate transfer system includes a substrate transfer robot disposed in a robot installment area defined between a first apparatus and a second apparatus. The first apparatus includes a first cassette, a second cassette and a first wall. The second apparatus includes a second wall. The substrate transfer robot transfers a substrate from each of the first cassette and the second cassette to the second apparatus. The substrate transfer robot includes a hand and an arm. The arm includes a first arm rotatable about a center of rotation. The first cassette is closer to the center of rotation than the second cassette. The arm moves with being partially disposed beyond the second wall in plan view and the arm moves without being disposed beyond the second wall in plan view when taking out the substrate from the first cassette.
Abstract:
An anneal module for annealing semiconductor material wafers and similar substrates reduces particle contamination and oxygen ingress while providing uniform heating including for 500° C. processes. The anneal module may include a process chamber formed in a metal body having internal cooling lines. A hot plate has a pedestal supported on a thermal choke on the body. A gas distributor in the lid over the hot plate flows gas uniformly over the wafer. A transfer mechanism moves a hoop to shift the wafer between the hot plate and a cold plate.