公开(公告)号：US08823123B2

公开(公告)日：2014-09-02

申请号：US13601439

申请日：2012-08-31

Applicant: Koichi Kokubun ,  Yusaku Konno

Inventor： Koichi Kokubun ,  Yusaku Konno

IPC: H01L31/0232 ,  H01L21/00 ,  H01L27/146 ,  H01L31/0216

CPC classification number: H01L27/146 ,  H01L27/14621 ,  H01L27/14685 ,  H01L31/02165 ,  H01L31/0232

Abstract: According to one embodiment, there is provided a solid-state image sensor including a photoelectric conversion layer, and a multilayer interference filter. The multilayer interference filter is arranged to conduct light of a particular color, of incident light, selectively to the photoelectric conversion layer. The multilayer interference filter has a laminate structure in which a first layer having a first refraction index and a second layer having a second refraction index are repeatedly laminated, and a third layer which is in contact with a lower surface of the laminate structure and has a third refraction index. A lowermost layer of the laminate structure is the second layer. The third refraction index is not equal to the first refraction index and is higher than the second refraction index.

Abstract translation: 根据一个实施例，提供了一种包括光电转换层和多层干涉滤光器的固态图像传感器。 多层干涉滤光器被布置成将特定颜色的入射光的光选择性地导入光电转换层。 多层干涉滤光器具有层叠结构，其中具有第一折射率的第一层和具有第二折射率的第二层被重复层压，以及与层压结构的下表面接触的第三层， 第三折射指数。 层压结构的最下层是第二层。 第三折射率不等于第一折射率并且高于第二折射率。

公开(公告)号：US08791537B2

公开(公告)日：2014-07-29

申请号：US13457442

申请日：2012-04-26

Applicant: Issac Wing-Tak Chan ,  Chao-Chiun Liang ,  Heng-Yin Chen ,  Ming-Hua Yeh

Inventor： Issac Wing-Tak Chan ,  Chao-Chiun Liang ,  Heng-Yin Chen ,  Ming-Hua Yeh

IPC: H01L31/0232 ,  H01L31/045 ,  H01L31/0216 ,  H01L31/055 ,  H01L31/115

CPC classification number: H01L31/02322 ,  H01L27/14632 ,  H01L27/14663 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/055 ,  H01L31/115 ,  H02S30/20 ,  Y02E10/52

Abstract: Disclosed is a flexible radiation detector including a substrate, a switching device on the substrate, an energy conversion layer on the switching device, a top electrode layer on the energy conversion layer, a first phosphor layer on the top electrode layer, and a second phosphor layer under the substrate.

Abstract translation: 公开了一种灵活的辐射检测器，包括基板，基板上的开关装置，开关装置上的能量转换层，能量转换层上的顶部电极层，顶部电极层上的第一荧光体层，以及第二荧光体 底层下方。

公开(公告)号：US20140205233A1

公开(公告)日：2014-07-24

申请号：US14224877

申请日：2014-03-25

Applicant: Infineon Technologies AG

Inventor： Thomas Schulz

IPC: G02B6/12

CPC classification number: G02B6/12 ,  H01L31/0232 ,  H01L31/02325 ,  H01L31/103 ,  H01L31/105 ,  H01L31/107 ,  H01L31/165

Abstract: One embodiment provides an integrated circuit including a first non-planar structure and a waveguide configured to provide electromagnetic waves to the first non-planar structure. The first non-planar structure provides a first signal in response to at least some of the electromagnetic waves.

Abstract translation: 一个实施例提供了包括第一非平面结构和波导的集成电路，该波导被配置为向第一非平面结构提供电磁波。 第一非平面结构响应于至少一些电磁波提供第一信号。

公开(公告)号：US20140202532A9

公开(公告)日：2014-07-24

申请号：US13981881

申请日：2011-08-03

Applicant: Fiala Pavel

Inventor： Fiala Pavel

IPC: H01L31/0232

CPC classification number: H01L31/0232 ,  H01Q1/248 ,  H01Q1/44 ,  H02S99/00

Abstract: A photovoltaic element including a resonator is arranged on a semiconductor structure (5) that is constituted by a region without electromagnetic damping (5a), whose upper plane forms the plane of incidence (3), and a region with electromagnetic damping (5b), both regions being bound by virtual boundaries (6) of variation in material properties. At least one 2D-3D resonator (4) is surrounded by a dielectric (10) and configured on the semiconductor structure (5), with a relative electrode (11) bordering on the region with electromagnetic damping (5b). The photovoltaic element having a resonator arranged on a semiconductor structure (5) uses the structure (5) and its characteristics to set suitable conditions for the impingement of an electromagnetic wave and its transformation to a stationary form of the electromagnetic field and not to secure the generation of an electric charge. The 2D-3D resonator produces electric current or voltage, which is conducted with the help of a nonlinear component (15) to a connecting component (16). The nonlinear element (15) shapes the signal on the resonant circuit; this signal is then filtered (rectified) to a further utilizable shape. The planar and spatial resonator (2D-3D resonator) is designed in such a manner that prevents the electromagnetic wave passing through the semiconductor structure (5) from being reflected back to the 2D-3D resonator created in the structure (5). The semiconductor structure (5) does not generate a backward electromagnetic wave propagating in the direction of the impinging electromagnetic wave emitted by a source such as the Sun. The region with electromagnetic damping (5b) has the function of suppressing the reflected wave. Thus, the resonator behaves like an ideal impedance-matched component for the proposed frequency spectrum. The semiconductor structure (5) is set in such a manner that the conductivity increases in the electromagnetic damping region (5b) in the direction of the relative electrode (11), which leads to a wide resonance curve in the photovoltaic element components.

公开(公告)号：US20140197509A1

公开(公告)日：2014-07-17

申请号：US13770897

申请日：2013-02-19

Applicant: SiOnyx, Inc.

Inventor： Homayoon Haddad ,  Jeffrey McKee ,  Jutao Jiang ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

IPC: H01L27/146 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/0352

CPC classification number: H01L27/14629 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/0352

Abstract: Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

Abstract translation: 提供背面照明感光装置及相关方法。 在一个方面，例如，背面照射的光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理化区域，以及位于 在纹理化区域和至少一个结点之间。 定位钝化区以将至少一个结与纹理化区域隔离，并且半导体衬底和纹理化区域被定位成使得输入的电磁辐射在接触纹理化区域之前穿过半导体衬底。 另外，该装置包括耦合到半导体衬底以从至少一个结转移电信号的电转移元件。

公开(公告)号：US20140191253A1

公开(公告)日：2014-07-10

申请号：US14118367

申请日：2011-05-19

Applicant: Stephan Haslbeck ,  Markus Foerste ,  Michael Schwind ,  Martin Haushalter ,  Hubert Halbritter ,  Frank Möllmer

Inventor： Stephan Haslbeck ,  Markus Foerste ,  Michael Schwind ,  Martin Haushalter ,  Hubert Halbritter ,  Frank Möllmer

IPC: H01L25/16 ,  H01L31/0203 ,  H01L33/48

CPC classification number: H01L25/167 ,  H01L25/0753 ,  H01L31/0203 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02325 ,  H01L31/167 ,  H01L33/483 ,  H01L33/486 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48227 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: An optoelectronic device includes an optoelectronic component that receives or generates radiation, a frame having a cavity, the optoelectronic component being arranged in said cavity, a connection carrier to which the optoelectronic component is fixed, and a cover covering the cavity and forming a radiation passage area for the radiation, wherein a beam path from the optoelectronic component to the radiation passage area is free of an encapsulation material for the optoelectronic component.

Abstract translation: 光电子器件包括接收或产生辐射的光电子部件，具有空腔的框架，所述光电子部件布置在所述空腔中，固定有光电子部件的连接载体以及覆盖空腔并形成辐射通道 用于辐射的区域，其中从光电子部件到辐射通道区域的光束路径没有用于光电子部件的封装材料。

公开(公告)号：US08772892B2

公开(公告)日：2014-07-08

申请号：US13773859

申请日：2013-02-22

Applicant: FUJIFILM Corporation

Inventor： Mitsuru Okigawa

IPC: H01L27/146 ,  H01L31/0232

CPC classification number: H01L31/0232 ,  G02B3/0056 ,  G02B5/201 ,  G03B3/10 ,  G03B13/36 ,  G03B35/08 ,  H01L27/14621 ,  H01L27/14627 ,  H04N5/2254 ,  H04N5/23212 ,  H04N5/272 ,  H04N5/35563 ,  H04N5/3696 ,  H04N9/045 ,  H04N13/218 ,  H04N13/232

Abstract: A CCD image sensor is provided with a pixel set. The pixel set is composed of first and second pixels and a microlens. The pixels are arranged side by side in a horizontal direction. The microlens has a hemispheric shape. A diameter of the microlens is larger than a length of a rectangular region, being an external shape of the first and second pixels, in a height direction. The rectangular region has a height and width ratio of approximately 1:2. The pixel sets are arranged in a width direction of the rectangular region to constitute a pixel row. In the CCD image sensor, the pixel rows are arranged in the height direction of the rectangular region, with the adjacent pixel rows shifted from each other in the horizontal direction by half pitch of the rectangular region.

Abstract translation: CCD图像传感器具有像素组。 像素组由第一和第二像素和微透镜组成。 像素沿水平方向并排布置。 微透镜具有半球形状。 微透镜的直径大于在高度方向上作为第一和第二像素的外部形状的矩形区域的长度。 矩形区域的高宽比约为1：2。 像素组被布置在矩形区域的宽度方向上以构成像素行。 在CCD图像传感器中，像素行排列在矩形区域的高度方向上，相邻的像素行在水平方向上彼此偏移矩形区域的一半间距。

公开(公告)号：US08772717B2

公开(公告)日：2014-07-08

申请号：US12853174

申请日：2010-08-09

Applicant: Pradip Mitra ,  Jeffrey D. Beck ,  Mark R. Skokan

Inventor： Pradip Mitra ,  Jeffrey D. Beck ,  Mark R. Skokan

IPC: G01J5/00

CPC classification number: G01J1/44 ,  H01L27/1446 ,  H01L27/14652 ,  H01L31/02161 ,  H01L31/0232 ,  H01L31/024 ,  H01L31/02966 ,  H01L31/101 ,  H01L31/1032 ,  H01L31/1832

Abstract: A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber.

Abstract translation: 提供一种辐射检测器，其包括具有渐变多层结构的辐射吸收体的光电二极管。 吸收体的各层由诸如HgCdTe的半导体材料形成。 第一层被形成为具有第一预定波长截止。 层中的第二层设置在吸收体的第一层和第一表面之下，辐射被接收在该吸收体的第一表面下方。 第二层具有半导体材料的渐变组成结构，使得第二层的波长截止从第二预定波长截止到第一预定波长截止不同，使得第二层比带隙的第一带隙具有逐渐变小的带隙 第一层 分级多层辐射吸收器结构使得载体能够朝向用于测量由辐射吸收器感测的辐射的导体流动。

公开(公告)号：US20140175472A1

公开(公告)日：2014-06-26

申请号：US14234709

申请日：2012-07-17

Applicant: Sang Jeong An

Inventor： Sang Jeong An

IPC: H01L33/62 ,  H01L27/15

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L27/15 ,  H01L27/153 ,  H01L31/0232 ,  H01L33/504 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48137 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: The present disclosure provides a semiconductor light emitting unit connected body, comprising a first light emitting unit having a current supplying layer formed at the bottom; a second light emitting unit having a current supplying layer formed at the bottom and extended into the second light emitting unit; a connecting plate including a conductive portion where the first light emitting unit is placed and a conductive portion where the second light emitting unit is placed; and an electric pass for electrically connecting the first light emitting unit and the second light emitting unit.

Abstract translation: 本公开提供了一种半导体发光单元连接体，包括在底部形成有电流供给层的第一发光单元; 第二发光单元，其具有形成在底部并延伸到第二发光单元中的电流供给层; 包括放置第一发光单元的导电部分和放置第二发光单元的导电部分的连接板; 以及用于电连接第一发光单元和第二发光单元的电通路。

公开(公告)号：US20140167090A1

公开(公告)日：2014-06-19

申请号：US14185372

申请日：2014-02-20

Applicant: Infineon Technologies AG

Inventor： Jaime Estevez-Garcia ,  Josef-Paul Schaffer

IPC: H01L31/0232 ,  H01L33/58

CPC classification number: H01L31/02327 ,  H01L31/0232 ,  H01L31/105 ,  H01L31/1105 ,  H01L31/1113 ,  H01L31/167 ,  H01L31/173 ,  H01L33/58

Abstract: An optoelectronic transmission system has a photoemitter semiconductor component and a photodetector semiconductor component. The photoemitter semiconductor component has a radiation source for converting a first electrical signal into a first electromagnetic radiation and a first polarization filter having a first polarization direction for filtering the first electromagnetic radiation. The photodetector semiconductor component has a second polarization filter having a second polarization direction for filtering a second electromagnetic radiation and a sensor element for converting a second electromagnetic radiation which has been polarized by the polarization filter into a second electrical signal. In this case, the first polarization direction of the first polarization filter is identical to the second polarization direction of the second polarization filter.

Abstract translation: 光电传输系统具有光发射器半导体部件和光电检测器半导体部件。 光发射器半导体部件具有用于将第一电信号转换为第一电磁辐射的辐射源和具有用于滤波第一电磁辐射的第一偏振方向的第一偏振滤光器。 光检测器半导体元件具有第二偏振滤波器，其具有用于滤波第二电磁辐射的第二偏振方向和用于将已被偏振滤波器偏振的第二电磁辐射转换为第二电信号的传感器元件。 在这种情况下，第一偏振滤波器的第一偏振方向与第二偏振滤波器的第二偏振方向相同。