公开(公告)号：US08813180B1

公开(公告)日：2014-08-19

申请号：US14061720

申请日：2013-10-23

申请人： Lee Chen ,  John Chiong ,  Dennis I. Oshiba

发明人： Lee Chen ,  John Chiong ,  Dennis I. Oshiba

IPC分类号： H04L29/06 ,  H04L29/08 ,  H04W12/00

CPC分类号： H04L63/0263 ,  G06F21/00 ,  G06F21/44 ,  H04L12/66 ,  H04L51/04 ,  H04L63/02 ,  H04L63/0227 ,  H04L63/0236 ,  H04L63/0245 ,  H04L63/0254 ,  H04L63/029 ,  H04L63/0407 ,  H04L63/08 ,  H04L63/10 ,  H04L63/102 ,  H04L63/105 ,  H04L63/164 ,  H04L63/168 ,  H04L63/20 ,  H04L63/30 ,  H04L65/1026 ,  H04L67/10 ,  H04L67/1004 ,  H04L67/104 ,  H04L67/141 ,  H04L67/22 ,  H04L67/306 ,  H04L67/42 ,  H04L69/28 ,  H04L69/329 ,  H04M1/72547 ,  H04W12/00

摘要： Applying a security policy to an application session, includes: recognizing the application session between a network and an application via a security gateway; determining by the security gateway a user identity of the application session using information about the application session; obtaining by the security gateway the security policy comprising network parameters mapped to the user identity; and applying the security policy to the application session by the security gateway. The user identity may be a network user identity or an application user identity recognized from packets of the application session. The security policy may comprise a network traffic policy mapped and/or a document access policy mapped to the user identity, where the network traffic policy is applied to the application session. The security gateway may further generate a security report concerning the application of the security policy to the application session.

摘要翻译： 将安全策略应用于应用程序会话包括：通过安全网关识别网络和应用程序之间的应用程序会话; 使用关于应用会话的信息由安全网关确定应用会话的用户身份; 由安全网关获取包括映射到用户身份的网络参数的安全策略; 并将安全策略应用于安全网关的应用会话。 用户身份可以是从应用会话的分组识别的网络用户身份或应用用户身份。 安全策略可以包括被映射的网络流量策略和/或映射到用户身份的文档访问策略，其中将网络流量策略应用于应用会话。 安全网关还可以生成关于安全策略应用于应用会话的安全报告。

公开(公告)号：US20130256272A1

公开(公告)日：2013-10-03

申请号：US13436458

申请日：2012-03-30

申请人： Jianping Zhao ,  Lee Chen ,  Vincent M. Donnelly ,  Demetre J. Economou ,  Merritt Funk ,  Radha Sundararajan

发明人： Jianping Zhao ,  Lee Chen ,  Vincent M. Donnelly ,  Demetre J. Economou ,  Merritt Funk ,  Radha Sundararajan

IPC分类号： H05H1/24 ,  B44C1/22 ,  C23C16/511 ,  C23C16/52

CPC分类号： H01J37/32192 ,  C23C16/511 ,  H01J37/32293 ,  H05H1/46 ,  H05H2001/4615 ,  H05H2001/463

摘要： A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.

摘要翻译： 表面波等离子体（SWP）源通过例如径向线缝隙天线将脉冲微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 为了在脉冲之间的等离子体密度低的情况下防止微波能量暴露在基板的表面上，在SWP源和SWP源之间提供诸如螺旋感应源，平面RF线圈或其他电感耦合源的ICP源 该衬底产生对微波能量不透明的等离子体。 ICP源也可以与MW等离子体的脉冲同步脉冲同步，随着MW脉冲的上升。 ICP还将等离子体的边缘致密分布添加到通常以室为中心的MW等离子体以改善等离子体均匀性。

公开(公告)号：US20130256268A1

公开(公告)日：2013-10-03

申请号：US13436760

申请日：2012-03-30

申请人： Lee Chen ,  Merritt Funk

发明人： Lee Chen ,  Merritt Funk

IPC分类号： B44C1/22 ,  B05B1/00 ,  B05C11/00 ,  B05C13/00

CPC分类号： H01J37/32834 ,  H01J37/32504 ,  H01J37/32633 ,  H01J37/32935

摘要： A plasma processing system. The processing system comprises a process chamber having first and second ends arranged such that the first end opposes the second end. A substrate support is positioned at the first end of the process chamber and is configured to support a substrate. An exhaust system is positioned proximate the second end of the process chamber and draws a vacuum on the process chamber. Between the exhaust system and substrate support there is a plurality of super-Debye openings, and between the exhaust system and the plurality of super-Debye openings is a plurality of sub-Debye openings. The super-Debye openings are configured to limit diffusion of plasma while the sub-Debye openings are configured to quench plasma.

摘要翻译： 等离子体处理系统 处理系统包括处理室，该处理室的第一和第二端被布置为使得第一端与第二端相对。 衬底支撑件定位在处理室的第一端处并且被配置为支撑衬底。 排气系统定位在处理室的第二端附近并在处理室上抽真空。 在排气系统和基板支撑件之间存在多个超级德拜开口，并且在排气系统与多个超级德拜开口之间是多个次德开口。 超级德拜开口被配置为限制等离子体的扩散，而副德拜开口被配置为猝灭等离子体。

公开(公告)号：US08486798B1

公开(公告)日：2013-07-16

申请号：US13366340

申请日：2012-02-05

申请人： Zhiying Chen ,  Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

发明人： Zhiying Chen ,  Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

IPC分类号： H01L21/20 ,  H01L29/93 ,  H01L21/306

CPC分类号： H01J37/32807 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642

摘要： A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated to include a semiconductor junction, and wherein a capacitance of the chamber component is varied when a voltage is applied across the semiconductor junction.

摘要翻译： 描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。 可更换腔室元件包括被配置为在等离子体处理系统中暴露于等离子体的室部件，其中腔室部件被制造为包括半导体结，并且其中当跨越半导体施加电压时腔室部件的电容变化 交界处

公开(公告)号：US20130084706A1

公开(公告)日：2013-04-04

申请号：US13249418

申请日：2011-09-30

申请人： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L.G. Ventzek

发明人： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L.G. Ventzek

IPC分类号： H01L21/311 ,  H01L21/3065

CPC分类号： H01J37/3222 ,  H01J37/32256 ,  H01J37/32293

摘要： The invention provides a plurality of Surface Wave Antenna (SWA) plasma sources. The SWA plasma sources can comprise one or more non-circular slot antennas, each having a plurality of plasma-tuning rods extending therethrough. Some of the plasma tuning rods can be configured to couple the electromagnetic (EM) energy from one or more of the non-circular slot antennas to the process space within the process chamber. The invention also provides SWA plasma sources that can comprise a plurality of resonant cavities, each having one or more plasma-tuning rods extending therefrom. Some of the plasma tuning rods can be configured to couple the EM energy from one or more of the resonant cavities to the process space within the process chamber.

摘要翻译： 本发明提供了多个表面波天线（SWA）等离子体源。 SWA等离子体源可以包括一个或多个非圆形缝隙天线，每个天线具有延伸穿过其中的多个等离子体调谐杆。 一些等离子体调谐杆可以被配置为将来自一个或多个非圆形缝隙天线的电磁（EM）能量耦合到处理室内的处理空间。 本发明还提供了可以包括多个谐振腔的SWA等离子体源，每个谐振腔具有从其延伸的一个或多个等离子体调谐杆。 等离子体调谐杆中的一些可以被配置为将来自一个或多个谐振腔的EM能量耦合到处理室内的处理空间。

公开(公告)号：US08343371B2

公开(公告)日：2013-01-01

申请号：US12688755

申请日：2010-01-15

申请人： Merritt Funk ,  Lee Chen ,  Radha Sundararajan

发明人： Merritt Funk ,  Lee Chen ,  Radha Sundararajan

IPC分类号： G01L21/30

CPC分类号： H01J37/3244 ,  H01J37/32009 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32532 ,  H01J2237/338

摘要： The invention can provide apparatus and methods of processing a substrate in real-time using a Quasi-Neutral Beam (Q-NB) curing system to improve the etch resistance of photoresist layer. In addition, the improved photoresist layer can be used to more accurately control gate and/or spacer critical dimensions (CDs), to control gate and/or spacer CD uniformity, and to eliminate line edge roughness (LER) and line width roughness (LWR).

摘要翻译： 本发明可以提供使用准中性束（Q-NB）固化系统实时处理衬底以提高光致抗蚀剂层的耐蚀刻性的设备和方法。 此外，改进的光致抗蚀剂层可用于更精确地控制栅极和/或间隔物临界尺寸（CD），以控制栅极和/或间隔区CD均匀性，并且消除线边缘粗糙度（LER）和线宽粗糙度（LWR ）。

公开(公告)号：US20120252141A1

公开(公告)日：2012-10-04

申请号：US13073237

申请日：2011-03-28

申请人： Radha Sundararajan ,  Merritt Funk ,  Lee Chen ,  Barton Lane

发明人： Radha Sundararajan ,  Merritt Funk ,  Lee Chen ,  Barton Lane

IPC分类号： H01L21/66

CPC分类号： H01L22/20 ,  H01J37/32082 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/6708 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention provides a method of processing a wafer using Ion Energy (IE)-related multilayer process sequences and Ion Energy Controlled Multi-Input/Multi-Output (IEC-MIMO) models and libraries that can include one or more measurement procedures, one or more IEC-etch sequences, and one or more Ion Energy Optimized (IEO) etch procedures. The IEC-MIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple IEC etch sequences. The multiple layers and/or the multiple IEC etch sequence can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using IEO etch procedures.

摘要翻译： 本发明提供了一种使用离子能量（IE）相关的多层过程序列和离子能量控制多输入/多输出（IEC-MIMO）模型和可包括一个或多个测量过程的库来处理晶片的方法，其中一个或多个 更多的IEC蚀刻序列和一个或多个离子能量优化（IEO）蚀刻程序。 IEC-MIMO过程控制使用多层和/或多个IEC蚀刻序列之间的动态交互行为建模。 多层和/或多个IEC蚀刻序列可以与可以使用IEO蚀刻工艺创建的线，沟槽，通孔，间隔物，触点和栅极结构的产生相关联。

公开(公告)号：US08083961B2

公开(公告)日：2011-12-27

申请号：US11495726

申请日：2006-07-31

申请人： Lee Chen ,  Ping Jiang

发明人： Lee Chen ,  Ping Jiang

IPC分类号： B44C1/22 ,  C23F1/00 ,  G01L21/30

CPC分类号： H01J37/3233 ,  B05D3/145 ,  H01J37/32009

摘要： A method and system for treating a substrate using a ballistic electron beam is described, whereby the radial uniformity of the electron beam flux is adjusted by modulating the source radio frequency (RF) power. For example, a plasma processing system is described having a first RF power coupled to a lower electrode, which may support the substrate, a second RF power coupled to an upper electrode that opposes the lower electrode, and a negative high voltage direct current (DC) power coupled to the upper electrode to form the ballistic electron beam. The amplitude of the second RF power is modulated to affect changes in the uniformity of the ballistic electron beam flux.

摘要翻译： 描述了使用弹道电子束处理衬底的方法和系统，由此通过调制源射频（RF）功率来调节电子束通量的径向均匀性。 例如，描述了等离子体处理系统，其具有耦合到可以支撑衬底的下电极的第一RF功率，耦合到与下电极相对的上电极的第二RF功率和负的高电压直流（DC ）功率耦合到上电极以形成弹道电子束。 调制第二RF功率的幅度以影响弹道电子束通量的均匀性的变化。

公开(公告)号：US08038834B2

公开(公告)日：2011-10-18

申请号：US12754662

申请日：2010-04-06

申请人： Merritt Funk ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

发明人： Merritt Funk ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

IPC分类号： H01L21/3065 ,  C23C16/00 ,  C23C16/455 ,  C23C16/50

CPC分类号： C23C16/4412 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

摘要： A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

摘要翻译： 等离子体处理系统包括处理室，被配置为保持用于等离子体处理的基板的基板保持器和气体注入组件。 气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。 等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

公开(公告)号：US07998307B2

公开(公告)日：2011-08-16

申请号：US11518884

申请日：2006-09-12

申请人： Lee Chen ,  Paul Moroz

发明人： Lee Chen ,  Paul Moroz

IPC分类号： C23C16/00 ,  C23C14/00 ,  C23F1/00 ,  H01L21/306 ,  A62D3/00

CPC分类号： H01J37/3222 ,  H01J37/32192 ,  H01J37/3233

摘要： A plasma processing system is described for generating plasma with a ballistic electron beam using a surface wave plasma (SWP) source, such as a radial line slot antenna (RLSA) during semiconductor device fabrication. The antenna comprises a resonator plate having a partially open, electrically conductive layer coupled to a surface of the resonator plate. For example, the electrically conductive layer is formed at an interface between the resonator plate and the plasma, and a direct current (DC) voltage is applied to the electrically conductive layer.

摘要翻译： 描述了一种等离子体处理系统，用于在半导体器件制造期间使用诸如径向线槽天线（RLSA）的表面波等离子体（SWP）源来产生具有弹道电子束的等离子体。 天线包括谐振器板，其具有耦合到谐振器板的表面的部分打开的导电层。 例如，导电层形成在谐振器板和等离子体之间的界面处，并且直流（DC）电压被施加到导电层。