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    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    116.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20160260822A1

    公开(公告)日：2016-09-08

    申请号：US15056356

    申请日：2016-02-29

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Satoru OKAMOTO ,  Shinya SASAGAWA

    IPC: H01L29/66 ,  H01L29/423 ,  H01L29/24 ,  H01L29/40 ,  H01L29/78 ,  H01L29/22

    CPC classification number: H01L29/66969 ,  H01L21/385 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/22 ,  H01L29/24 ,  H01L29/401 ,  H01L29/408 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/78 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78696

    Abstract: A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor overlaps with the oxide semiconductor with the first insulator positioned therebetween. The second insulator has an opening and a side surface of the second insulator overlaps with a side surface of the first conductor in the opening with the first insulator positioned therebetween. Part of a surface of the second conductor and part of a surface of the third conductor are in contact with the first insulator in the opening. The oxide semiconductor overlaps with the second conductor and the third conductor.

    Abstract translation: 提供一分钟晶体管。 提供具有低寄生电容的晶体管。 提供具有高频特性的晶体管。 提供包括晶体管的半导体器件。 半导体器件包括氧化物半导体，第一导体，第二导​​体，第三导体，第一绝缘体和第二绝缘体。 第一导体与氧化物半导体重叠，第一绝缘体位于它们之间。 第二绝缘体具有开口，并且第二绝缘体的侧表面与开口中的第一导体的侧表面重叠，其中第一绝缘体位于其间。 第二导体的表面的一部分和第三导体的表面的一部分与开口中的第一绝缘体接触。 氧化物半导体与第二导体和第三导体重叠。

    SEMICONDUCTOR DEVICE
    117.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20160190347A1

    公开(公告)日：2016-06-30

    申请号：US15062268

    申请日：2016-03-07

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shinya SASAGAWA ,  Motomu KURATA ,  Kazuya HANAOKA ,  Yoshiyuki KOBAYASHI ,  Daisuke MATSUBAYASHI

    IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04

    CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/24 ,  H01L29/7869

    Abstract: A semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes an insulating layer, a semiconductor layer over the insulating layer, a source electrode layer and a drain electrode layer electrically connected to the semiconductor layer, a gate insulating film over the semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer overlapping with part of the semiconductor layer, part of the source electrode layer, and part of the drain electrode layer with the gate insulating film therebetween. A cross section of the semiconductor layer in the channel width direction is substantially triangular or substantially trapezoidal. The effective channel width is shorter than that for a rectangular cross section.

    SEMICONDUCTOR DEVICE
    118.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20160163744A1

    公开(公告)日：2016-06-09

    申请号：US15041338

    申请日：2016-02-11

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Tetsuhiro TANAKA

    IPC: H01L27/12

    CPC classification number: H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02617 ,  H01L21/02631 ,  H01L29/045 ,  H01L29/26 ,  H01L29/78 ,  H01L29/7869

    Abstract: A semiconductor device in which an increase in oxygen vacancies in an oxide semiconductor layer can be suppressed is provided. A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device includes an oxide semiconductor layer in a channel formation region, and by the use of an oxide insulating film below and in contact with the oxide semiconductor layer and a gate insulating film over and in contact with the oxide semiconductor layer, oxygen of the oxide insulating film or the gate insulating film is supplied to the oxide semiconductor layer. Further, a conductive nitride is used for metal films of a source electrode layer, a drain electrode layer, and a gate electrode layer, whereby diffusion of oxygen to the metal films is suppressed.

    Abstract translation: 提供了可以抑制氧化物半导体层中氧空位增加的半导体器件。 提供了具有良好电气特性的半导体器件。 提供了一种高度可靠的半导体器件。 半导体器件包括在沟道形成区域中的氧化物半导体层，并且通过使用氧化物半导体层下方并与氧化物半导体层接触的氧化物绝缘膜和与氧化物半导体层接触的栅绝缘膜， 氧化物绝缘膜或栅极绝缘膜被提供给氧化物半导体层。 此外，导电氮化物用于源电极层，漏电极层和栅电极层的金属膜，由此抑制氧向金属膜的扩散。

    SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
    119.
    发明申请
    SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE 有权
    半导体器件及其制造方法和电子器件

    公开(公告)号：US20150348909A1

    公开(公告)日：2015-12-03

    申请号：US14657347

    申请日：2015-03-13

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Shinya SASAGAWA

    IPC: H01L23/535 ,  H01L23/528 ,  H01L21/768 ,  H01L23/522

    CPC classification number: H01L27/0688 ,  H01L21/76805 ,  H01L27/092 ,  H01L27/1156 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Provided is a semiconductor device that occupies a small area, a highly integrated semiconductor device, or a semiconductor device with high productivity. To fabricate an integrated circuit, a first insulating film is formed over a p-channel transistor; a transistor including an oxide semiconductor is formed over the first insulating film; a second insulating film is formed over the transistor; an opening, that is, a contact hole part of a sidewall of which is formed of the oxide semiconductor of the transistor, is formed in the first insulating film and the second insulating film; and an electrode connecting the p-channel transistor and the transistor including an oxide semiconductor to each other is formed.

    Abstract translation: 提供占据小面积的半导体器件，高度集成的半导体器件或具有高生产率的半导体器件。 为了制造集成电路，在p沟道晶体管上形成第一绝缘膜; 在第一绝缘膜上形成包括氧化物半导体的晶体管; 在晶体管上形成第二绝缘膜; 在第一绝缘膜和第二绝缘膜中形成开口，即其侧壁的接触孔部分由晶体管的氧化物半导体形成; 并且形成将p沟道晶体管和包括氧化物半导体的晶体管彼此连接的电极。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    120.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20150228802A1

    公开(公告)日：2015-08-13

    申请号：US14696841

    申请日：2015-04-27

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hideomi SUZAWA ,  Shinya SASAGAWA

    IPC: H01L29/786 ,  H01L29/51

    CPC classification number: H01L29/7869 ,  H01L29/4908 ,  H01L29/512 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78621

    Abstract: An object is to provide a transistor including an oxide semiconductor having favorable electrical characteristics and a manufacturing method thereof. A semiconductor device includes an oxide semiconductor film and an insulating film over a substrate. An end portion of the oxide semiconductor film is in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. The semiconductor device further includes a gate insulating film over and in contact with the oxide semiconductor film, a gate electrode with a sidewall insulating film over the gate insulating film, and a source electrode and a drain electrode in contact with the sidewall insulating film, the oxide semiconductor film, and the insulating film.

    Abstract translation: 目的在于提供一种具有良好的电气特性的氧化物半导体的晶体管及其制造方法。 半导体器件包括氧化物半导体膜和衬底上的绝缘膜。 氧化物半导体膜的端部与绝缘膜接触。 氧化物半导体膜包括沟道形成区域和包含掺杂剂的区域，沟道形成区域夹在其间。 半导体器件还包括在氧化物半导体膜上并与之接触的栅极绝缘膜，在栅极绝缘膜上具有侧壁绝缘膜的栅电极以及与侧壁绝缘膜接触的源电极和漏电极， 氧化物半导体膜和绝缘膜。

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