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    Light emitting diode having improved current spreading efficiency, improved mechanical reliability, or some combination thereof
    111.
    发明授权
    Light emitting diode having improved current spreading efficiency, improved mechanical reliability, or some combination thereof 有权

    公开(公告)号：US10172190B2

    公开(公告)日：2019-01-01

    申请号：US15579370

    申请日：2016-05-18

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Mae Yi Kim ,  Seom Geun Lee ,  Yeo Jin Yoon ,  Jin Woong Lee ,  Yong Woo Ryu

    IPC: H01L33/00 ,  H01L27/15 ,  H05B33/08 ,  H01L33/14 ,  H01L33/36

    Abstract: A light emitting diode including a first semiconductor layer and a plurality of mesas including a second semiconductor layer and an active layer interposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer including an exposed region between the plurality of mesas, a current blocking layer disposed on a portion of the plurality of mesas and a portion of the exposed region, a transparent electrode layer covering the second semiconductor layer and the current blocking layer, and a second electrode disposed on the current blocking layer and the transparent electrode layer and electrically connected to the second semiconductor layer. The current blocking layer includes a connecting portion extending from a first mesa to a second mesa adjacent to the first mesa and a protruding portion protruding from the connecting portion and disposed on the exposed region.

    LIGHT EMITTING ELEMENT INCLUDING ZnO TRANSPARENT ELECTRODE
    114.
    发明申请
    LIGHT EMITTING ELEMENT INCLUDING ZnO TRANSPARENT ELECTRODE 审中-公开

    公开(公告)号：US20180138370A1

    公开(公告)日：2018-05-17

    申请号：US15870687

    申请日：2018-01-12

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Chan Seob Shin ,  Myoung Hak Yang ,  Yeo Jin Yoon ,  Seom Geun Lee

    IPC: H01L33/42 ,  H01L33/20 ,  H01L33/38

    CPC classification number: H01L33/42 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38

    Abstract: An exemplary light emitting diode is provided to comprise: a first semiconductor layer; a mesa disposed on the first semiconductor layer and including an active layer and a second semiconductor layer disposed on the active layer; a ZnO transparent electrode disposed on the mesa; a first electrode disposed on the first semiconductor layer; and a second electrode disposed on the ZnO transparent electrode, and including a second electrode pad and at least one second electrode extending portion extending from the second electrode pad. The second electrode extending portion contacts the ZnO transparent electrode. The ZnO transparent electrode includes a first region and a second region. The first region protrudes from the top surface of the ZnO transparent electrode, includes a plurality of projecting portions arranged in a predetermined pattern, the thickness of the first region greater than the thickness of the second region.

    LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD
    115.
    发明申请
    LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD 审中-公开
    具有电极板的发光二极管芯片

    公开(公告)号：US20170047483A1

    公开(公告)日：2017-02-16

    申请号：US15336510

    申请日：2016-10-27

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

    IPC: H01L33/38 ,  H01L33/20 ,  H01L33/08 ,  H01L33/46 ,  H01L33/62 ,  H01L33/14 ,  H01L33/42

    CPC classification number: H01L33/36 ,  H01L33/08 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

    Abstract translation: 本文公开了包括电极焊盘的LED芯片。 LED芯片包括：第一导电型半导体层，第一导电型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠; 位于与第一导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并连接到所述第一导电型半导体层的第一电极延伸部; 电连接到第二导电类型半导体层的第二电极焊盘; 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。

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