公开(公告)号：US20170062173A1

公开(公告)日：2017-03-02

申请号：US14837610

申请日：2015-08-27

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： William Davis Lee

IPC: H01J37/08 ,  H01J37/147 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/05 ,  H01J37/1472 ,  H01J37/3171 ,  H01J2237/053 ,  H01J2237/0815 ,  H01J2237/31701 ,  H01J2237/31705

Abstract: An apparatus, referred to as a light bath, is disposed in a beamline ion implantation system and is used to photoionize particles in the ion beam into positively charged particles. Once positively charged, these particles can be manipulated by the various components in the beamline ion implantation system. In certain embodiments, a positively biased electrode is disposed downstream from the light bath to repel the formerly non-positively charged particles away from the workpiece. In certain embodiments, the light bath is disposed within an existing component in the beamline ion implantation system, such as a deceleration stage or a Vertical Electrostatic Energy Filter. The light source emits light at a wavelength sufficiently short so as to ionize the non-positively charged particles. In certain embodiments, the wavelength is less than 250 nm.

Abstract translation: 称为光浴的装置设置在束线离子注入系统中，用于将离子束中的颗粒光电离成带正电的颗粒。 一旦带正电，这些颗粒可以通过束线离子注入系统中的各种组分来操纵。 在某些实施例中，正偏置的电极设置在光浴的下游，以将以前不带正电的颗粒排斥离开工件。 在某些实施例中，光浴设置在束线离子注入系统中的现有部件内，例如减速阶段或垂直静电能量过滤器。 光源以足够短的波长发射光，以使非正电荷的粒子离子化。 在某些实施方案中，波长小于250nm。

公开(公告)号：US20170032941A1

公开(公告)日：2017-02-02

申请号：US15293367

申请日：2016-10-14

Applicant: Praxair Technology, Inc.

Inventor： Ashwini K. Sinha ,  Stanley M. Smith ,  Douglas C. Heiderman ,  Serge M. Campeau

IPC: H01J37/32 ,  C01B3/00

CPC classification number: H01J37/3171 ,  C01B3/00 ,  H01J27/22 ,  H01J37/08 ,  H01J37/32458 ,  H01J37/32807 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/08 ,  H01J2237/0815 ,  H01J2237/31701 ,  H01J2237/3365 ,  Y02E60/324

Abstract: A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

Abstract translation: 提供了一种用于在硼离子注入期间改善束电流的新型组成，系统和方法。 在优选的方面，硼离子注入工艺涉及在特定浓度范围内使用B2H6，11BF3和H2。 在生成和注入活性氢离子物质期间使用的离子源的工作电弧电压下，选择B2H6具有高于BF 3的电离横截面。 氢气允许更高水平的B 2 H 6被引入BF 3中而不减少F离子清除。 当与常规硼前体材料产生的束电流相比时，活性硼离子产生改进的束电流，其特征在于保持或增加束电流水平而不引起离子源的劣化。

公开(公告)号：US20170032937A1

公开(公告)日：2017-02-02

申请号：US14811272

申请日：2015-07-28

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Daniel Distaso ,  Svetlana B. Radovanov ,  Joseph P. Dzengeleski

IPC: H01J37/32 ,  H01J27/02 ,  H01J27/16 ,  H01J37/08

CPC classification number: H01J37/32146 ,  H01J27/024 ,  H01J27/028 ,  H01J27/16 ,  H01J37/08 ,  H01J37/3211 ,  H01J37/32422 ,  H01J2237/0815 ,  H01J2237/0827 ,  H01J2237/3151 ,  H01J2237/31701 ,  H01J2237/31732

Abstract: An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period.

Abstract translation: 公开了一种用于产生负离子束的装置和方法。 该装置包括具有提取孔的RF离子源。 设置在电介质窗附近的天线由脉冲RF电源供电。 当RF电源被激活时，产生主要包含正离子和电子的等离子体。 当RF电源被禁用时，等离子体转换成离子离子等离子体。 当RF电源停用时，可以从RF离子源提取负离子。 负带状离子束形式的这些负离子可以以特定的入射角朝向工件。 此外，通过每个周期多次脉冲偏置电源，可以从相同的离子源中提取正离子束和负离子束。

公开(公告)号：US09520259B2

公开(公告)日：2016-12-13

申请号：US14949468

申请日：2015-11-23

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Alexandre Likhanskii ,  Svetlana B. Radovanov ,  Bon-Woong Koo

IPC: H01J27/02 ,  H01J27/16 ,  H01J37/08 ,  H05H1/46

CPC classification number: H01J27/024 ,  H01J27/16 ,  H01J37/08 ,  H01J2237/0815 ,  H05H2001/4652 ,  H05H2001/466

Abstract: A plasma chamber having improved controllability of the ion density of the extracted ribbon ion beam is disclosed. A plurality of pairs of RF biased electrodes is disposed on opposite sides of the extraction aperture in a plasma chamber. In some embodiments, one of each pair of RF biased electrodes is biased at the extraction voltage, while the other of each pair is coupled to a RF bias power supply, which provides a RF voltage having a DC component and an AC component. In another embodiment, both of the electrodes in each pair are coupled to a RF biased power supply. A blocker may be disposed in the plasma chamber near the extraction aperture. In some embodiments, RF biased electrodes are disposed on the blocker.

Abstract translation: 公开了具有提取的带状离子束的离子密度的可控性的等离子体室。 多个RF偏置电极对设置在等离子体室中的提取孔的相对侧上。 在一些实施例中，每对RF偏置电极中的一个被偏置在提取电压，而每对中的另一个耦合到RF偏置电源，RF偏压电源提供具有DC分量和AC分量的RF电压。 在另一个实施例中，每对中的两个电极耦合到RF偏置电源。 阻挡剂可以设置在提取孔附近的等离子体室中。 在一些实施例中，RF偏置电极设置在阻挡器上。

公开(公告)号：US20160348232A1

公开(公告)日：2016-12-01

申请号：US15163659

申请日：2016-05-24

Applicant: National Taiwan University of Science and Technology

Inventor： Liang-Chiun CHAO

IPC: C23C14/46

CPC classification number: C23C14/46 ,  H01J27/14 ,  H01J37/08 ,  H01J37/3178 ,  H01J2237/061 ,  H01J2237/0815 ,  H01J2237/3146

Abstract: An anode layer ion source includes a magnetic field generating member, an upper cathode electrode, a lower cathode electrode, a case member, and an anode electrode. The magnetic field generating member generates a magnetic field. The upper cathode electrode and the lower cathode respectively have two end members and form an opening there between. The two end members are two ends of the opening and guide the magnetic field to the opening, and the magnetic field in the openings is substantially parallel to the connection of two ends of the opening. The case member, the upper cathode electrode, and the lower cathode electrode form an accommodating cavity. The anode electrode is disposed in the accommodating cavity and generates an electric field to the opening. The electric field in the opening is substantially perpendicular to the magnetic field in the opening.

Abstract translation: 阳极层离子源包括磁场产生元件，上阴极电极，下阴极电极，外壳元件和阳极电极。 磁场产生部件产生磁场。 上阴极电极和下阴极分别具有两个端部构件并在其间形成开口。 两个端部构件是开口的两端并将磁场引导到开口，并且开口中的磁场基本上平行于开口两端的连接。 壳体构件，上阴极电极和下阴极电极形成容纳腔。 阳极电极设置在容纳腔中，并向开口产生电场。 开口中的电场基本上垂直于开口中的磁场。

公开(公告)号：US20160240354A1

公开(公告)日：2016-08-18

申请号：US15019990

申请日：2016-02-10

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroshi OBA ,  Yasuhiko SUGIYAMA ,  Mamoru OKABE

IPC: H01J37/32 ,  H01J37/20

CPC classification number: H01J37/32522 ,  H01J27/16 ,  H01J37/06 ,  H01J37/08 ,  H01J37/20 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32568 ,  H01J37/32807 ,  H01J2237/0815 ,  H01J2237/31749

Abstract: A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; a plasma generation chamber connected to the gas introduction chamber and made of a dielectric material; a coil wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; an envelope surrounding the gas introduction chamber, the plasma generation chamber and the coil; and insulating liquid filled inside the gas introduction chamber, the plasma generation chamber and the envelope to immerse the coil and having an dielectric strength voltage relatively greater than that of the envelope and the same dielectric dissipation factor as the plasma generation chamber.

Abstract translation: 等离子体离子源包括：引入原料气体的气体导入室; 连接到气体导入室并由介电材料制成的等离子体产生室; 沿着等离子体产生室的外周缠绕并施加高频电力的线圈; 围绕气体导入室的包络线，等离子体产生室和线圈; 以及填充在气体导入室，等离子体产生室和外壳内部的绝缘液体，以使线圈浸没，并且其介电强度电压相对大于封套的绝缘强度电压和与等离子体产生室相同的介电损耗因数。

公开(公告)号：US09314649B2

公开(公告)日：2016-04-19

申请号：US14231020

申请日：2014-03-31

Applicant: Vladimir Balakin

Inventor： Vladimir Balakin

IPC: G21K1/08 ,  A61N5/10 ,  H01J37/141

CPC classification number: A61N5/1082 ,  A61N5/1044 ,  A61N5/1067 ,  A61N5/107 ,  A61N5/1077 ,  A61N5/1081 ,  A61N2005/1087 ,  A61N2005/1097 ,  G21K1/093 ,  G21K5/04 ,  H01J37/141 ,  H01J2237/0815 ,  H05H2007/007 ,  H05H2007/082

Abstract: A fast magnet switching method and apparatus used to rapidly redirect cations, such as H+ or C6+, in a beam path, such as during or between treatment of individual volumes or voxels of a tumor of the patient, is described. Switching means include rapidly increasing or decreasing applied current to a coil about a magnet, which rapidly alters a magnetic field crossing the charged particle path and redirects a charged particle beam away from the patient, such as to a charged particle beam stop. Means to rapidly induce the current change include: (1) using a separate high voltage power supply and/or (2) opening a switch to redirect current through a resistor. In both cases, the rapid current change to the coil yields a rapid change the magnetic field and a corresponding rapid change in direction of the charged particles in the charged particle cancer therapy system.

Abstract translation: 描述了用于在诸如患者的肿瘤的个体体积或体素的处理期间或之间的波束路径中快速重定向阳离子（例如H +或C6 +）的快速磁体切换方法和装置。 切换装置包括对围绕磁体的线圈的施加电流迅速增加或减小，其迅速改变穿过带电粒子路径的磁场并将带电粒子束重新定向远离患者，诸如带电粒子束停止。 快速引起电流变化的手段包括：（1）使用单独的高压电源和/或（2）打开开关以使电流重新定向通过电阻器。 在这两种情况下，线圈的快速电流变化都会迅速改变带电粒子癌症治疗系统中带电粒子的磁场和相应的方向快速变化。

公开(公告)号：US08835880B2

公开(公告)日：2014-09-16

申请号：US11590570

申请日：2006-10-31

Applicant: Clive Chandler ,  Noel Smith

Inventor： Clive Chandler ,  Noel Smith

IPC: G21K5/00 ,  H01J37/305 ,  H01J37/317

CPC classification number: H01L21/306 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/006 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/3142 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/31742 ,  H01J2237/31744 ,  H01L21/67069

Abstract: A cluster source is used to assist charged particle beam processing. For example, a protective layer is applied using a cluster source and a precursor gas. The large mass of the cluster and the low energy per atom or molecule in the cluster restricts damage to within a few nanometers of the surface. Fullerenes or clusters of fullerenes, bismuth, gold or Xe can be used with a precursor gas to deposit material onto a surface, or can be used with an etchant gas to etch the surface. Clusters can also be used to deposit material directly onto the surface to form a protective layer for charged particle beam processing or to provide energy to activate an etchant gas.

Abstract translation: 群集源用于辅助带电粒子束处理。 例如，使用簇源和前体气体施加保护层。 簇中的大质量和聚集体中的每个原子或分子的低能量将损伤限制在表面的几纳米内。 富勒烯或富勒烯，铋，金或氙的簇可以与前体气体一起使用以将材料沉积到表面上，或者可以与蚀刻剂气体一起蚀刻表面。 簇也可用于将材料直接沉积到表面上以形成用于带电粒子束加工的保护层或提供能量以激活蚀刻剂气体。

公开(公告)号：US08736177B2

公开(公告)日：2014-05-27

申请号：US12894779

申请日：2010-09-30

Applicant: Shouyin Zhang

Inventor： Shouyin Zhang

IPC: H01J7/24

CPC classification number: H01J37/08 ,  H01J37/3211 ,  H01J2237/0815

Abstract: An inductively coupled plasma ion source for a focused ion beam (FIB) system is disclosed, comprising an insulating plasma chamber with a feed gas delivery system, a compact radio frequency (RF) antenna coil positioned concentric to the plasma chamber and in proximity to, or in contact with, the outer diameter of the plasma chamber. In some embodiments, the plasma chamber is surrounded by a Faraday shield to prevent capacitive coupling between the RF voltage on the antenna and the plasma within the plasma chamber. High dielectric strength insulating tubing is heat shrunk onto the outer diameter of the conductive tubing or wire used to form the antenna to allow close packing of turns within the antenna coil. The insulating tubing is capable of standing off the RF voltage differences between different portions of the antenna, and between the antenna and the Faraday shield.

Abstract translation: 公开了一种用于聚焦离子束（FIB）系统的电感耦合等离子体离子源，其包括具有进料气体输送系统的绝缘等离子体室，与等离子体室同心定位的紧凑射频（RF）天线线圈， 或与等离子体室的外径接触。 在一些实施例中，等离子体室由法拉第屏蔽围绕，以防止天线上的RF电压与等离子体室内的等离子体之间的电容耦合。 高介电强度绝缘管热收缩到用于形成天线的导电管或导线的外径上，以允许天线线圈内的匝紧密封装。 绝缘管能够防止天线的不同部分之间以及天线和法拉第屏蔽之间的RF电压差异。

公开(公告)号：US20140097752A1

公开(公告)日：2014-04-10

申请号：US13647540

申请日：2012-10-09

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： Costel Biloui ,  Timonthy J. Miller ,  Bon-Woong Koo ,  Anthony Renau

IPC: H01J27/16

CPC classification number: H01J37/32119 ,  H01J27/16 ,  H01J37/32477 ,  H01J37/32651 ,  H01J49/105 ,  H01J2237/0815

Abstract: A plasma ion source including a plasma chamber, gas inlets, an RF antenna, an RF window, an extraction plate, a window shield, and a chamber liner. The RF window may be positioned intermediate the RF antenna and the plasma chamber. The window shield may be disposed intermediate the RF widow and the interior of the plasma chamber and the chamber liner may cover the interior surface of the plasma chamber. During operation of the ion source, the window shield sustains ionic bombardment that would otherwise be sustained by the RF window. Fewer impurity ions are therefore released into the plasma chamber. Simultaneously, additional dopant atoms are released from the window shield into the plasma chamber. Ionic bombardment is also sustained by the chamber liner, which also contributes a quantity of dopant atoms to the plasma chamber. Dopant ion production within the plasma chamber is thereby increased while impurities are minimized.

Abstract translation: 一种等离子体离子源，包括等离子体室，气体入口，RF天线，RF窗，提取板，窗户屏蔽和室衬垫。 RF窗口可以位于RF天线和等离子体室之间。 窗口屏蔽件可以设置在RF寡围和等离子体室的内部之间，并且腔室衬套可以覆盖等离子体室的内表面。 在离子源操作期间，窗口屏蔽件维持否则由RF窗口维持的离子轰击。 因此，较少的杂质离子被释放到等离子体室中。 同时，另外的掺杂剂原子从窗口屏蔽释放到等离子体室中。 离子轰击也由腔室衬垫维持，这也有助于等离子体室的掺杂剂原子的量。 因此，等离子体室内的掺杂离子产生增加，同时使杂质最小化。