公开(公告)号：US6153261A

公开(公告)日：2000-11-28

申请号：US322709

申请日：1999-05-28

申请人： Li-Qun Xia ,  Ellie Yieh

发明人： Li-Qun Xia ,  Ellie Yieh

IPC分类号： C23C16/34 ,  C23C16/40 ,  C23C16/52 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  C23C16/30

CPC分类号： H01L21/0214 ,  C23C16/345 ,  C23C16/402 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3185 ,  H01L21/3122

摘要： A method and an apparatus for increasing a deposition rate of dielectric films deposited on a substrate for a given temperature while providing the same with good step coverage and gap-fill properties. This is achieved by employing bistertiarybutylaminesilane as a silicon source to react with an oxidizing agent to form a dielectric film on a substrate that includes silicon.

摘要翻译： 一种用于提高沉积在基底上的介电膜在给定温度下的沉积速率的方法和装置，同时提供良好的阶梯覆盖和间隙填充性能。 这通过使用二乙基丁基胺硅作为硅源与氧化剂反应以在包括硅的衬底上形成电介质膜来实现。

公开(公告)号：US5935340A

公开(公告)日：1999-08-10

申请号：US747892

申请日：1996-11-13

申请人： Li-Qun Xia ,  Visweswaren Sivaramakrishnan ,  Srinivas Nemani ,  Ellie Yieh ,  Gary Fong

发明人： Li-Qun Xia ,  Visweswaren Sivaramakrishnan ,  Srinivas Nemani ,  Ellie Yieh ,  Gary Fong

IPC分类号： B08B7/00 ,  C23C16/44 ,  H01L21/00 ,  B08B6/00

CPC分类号： H01L21/67017 ,  B08B7/0035 ,  C23C16/4405

摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

摘要翻译： 本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。 本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高纵横比器件的高质量处理。 在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。 特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

公开(公告)号：US09748125B2

公开(公告)日：2017-08-29

申请号：US13755891

申请日：2013-01-31

申请人： Banqiu Wu ,  Nag B. Patibandla ,  Toshiaki Fujita ,  Ralf Hofmann ,  Pravin K. Narwankar ,  Jeonghoon Oh ,  Srinivas Satya ,  Li-Qun Xia

发明人： Banqiu Wu ,  Nag B. Patibandla ,  Toshiaki Fujita ,  Ralf Hofmann ,  Pravin K. Narwankar ,  Jeonghoon Oh ,  Srinivas Satya ,  Li-Qun Xia

IPC分类号： C23C16/00 ,  H01L21/00 ,  H01L21/673 ,  H01L21/677 ,  C23C16/455 ,  C23C16/458 ,  C23C16/54

CPC分类号： H01L21/673 ,  C23C16/45546 ,  C23C16/4558 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/67346 ,  H01L21/677

摘要： A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.

公开(公告)号：US20140273530A1

公开(公告)日：2014-09-18

申请号：US14212425

申请日：2014-03-14

申请人： Victor Nguyen ,  Isabelita Roflox ,  Mihaela Balseanu ,  Li-Qun Xia ,  Heng Pan ,  Wei Liu ,  Malcolm J. Bevan ,  Christopher S. Olsen ,  Johanes F. Swenberg

发明人： Victor Nguyen ,  Isabelita Roflox ,  Mihaela Balseanu ,  Li-Qun Xia ,  Heng Pan ,  Wei Liu ,  Malcolm J. Bevan ,  Christopher S. Olsen ,  Johanes F. Swenberg

IPC分类号： H01L21/02

CPC分类号： H01L21/0217 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/02348 ,  H01L29/7843

摘要： Provided are methods post deposition treatment of films comprising SiN. Certain methods pertain to providing a film comprising SiN; and exposing the film to an inductively coupled plasma, capacitively coupled plasma or a microwave plasma to provide a treated film with a modulated film stress and/or wet etch rate in dilute HF. Certain other methods comprise depositing a PEALD SiN film followed by exposure to a plasma nitridation process or a UV treatment to provide a treated film.

摘要翻译： 提供了沉积处理包括SiN的膜的方法。 某些方法涉及提供包含SiN的膜; 并将该膜暴露于电感耦合等离子体，电容耦合等离子体或微波等离子体，以在稀HF中提供具有调制薄膜应力和/或湿蚀刻速率的处理薄膜。 某些其它方法包括沉积PEALD SiN膜，然后暴露于等离子体氮化处理或UV处理以提供经处理的膜。

公开(公告)号：US20130196078A1

公开(公告)日：2013-08-01

申请号：US13754771

申请日：2013-01-30

申请人： Joseph Yudovsky ,  Nag B. Patibandla ,  Pravin K. Narwankar ,  Li-Qun Xia ,  Toshiaki Fujita ,  Ralf Hofmann ,  Jeonghoon Oh ,  Srinivas Satya ,  Banqiu Wu

发明人： Joseph Yudovsky ,  Nag B. Patibandla ,  Pravin K. Narwankar ,  Li-Qun Xia ,  Toshiaki Fujita ,  Ralf Hofmann ,  Jeonghoon Oh ,  Srinivas Satya ,  Banqiu Wu

IPC分类号： C23C16/458

CPC分类号： C23C16/4584 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/54 ,  H01L21/67742

摘要： A substrate processing system for processing multiple substrates is provided and generally includes at least one substrate processing platform and at least one substrate staging platform. The substrate processing platform includes a rotary track system capable of supporting multiple substrate support assemblies and continuously rotating the substrate support assemblies, each carrying a substrate thereon. Each substrate is positioned on a substrates support assembly disposed on the rotary track system and being processed through at least one shower head station and at least one buffer station, which are positioned atop the rotary track system of the substrate processing platform. Multiple substrates disposed on the substrate support assemblies are processed in and out the substrate processing platform. The substrate staging platform includes at least one dual-substrate processing station, each dual-substrate processing station includes two substrate support assemblies for supporting two substrates thereon.

摘要翻译： 提供了用于处理多个基板的基板处理系统，并且通常包括至少一个基板处理平台和至少一个基板分段平台。 基板处理平台包括能够支撑多个基板支撑组件并且连续旋转基板支撑组件的旋转轨道系统，每个基板支撑组件在其上承载基板。 每个基板定位在设置在旋转轨道系统上的基板支撑组件上，并且通过位于基板处理平台的旋转轨道系统顶部的至少一个喷头站和至少一个缓冲站进行处理。 设置在基板支撑组件上的多个基板在基板处理平台内进出处理。 衬底分级平台包括至少一个双衬底处理站，每个双衬底处理站包括用于在其上支撑两个衬底的两个衬底支撑组件。

公开(公告)号：US08143174B2

公开(公告)日：2012-03-27

申请号：US12013232

申请日：2008-01-11

申请人： Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

发明人： Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

IPC分类号： H01L21/26

CPC分类号： H01L21/02126 ,  C23C16/0218 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02071 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3146 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76837 ,  Y10S438/931

摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.

摘要翻译： 一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。 该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。 致密化通常在还原环境中进行，同时加热基底。 致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。

公开(公告)号：US07879683B2

公开(公告)日：2011-02-01

申请号：US11869396

申请日：2007-10-09

申请人： Amir Al-Bayati ,  Alexandros T. Demos ,  Kang Sub Yim ,  Mehul Naik ,  Zhenjiang “David” Cui ,  Mihaela Balseanu ,  Meiyee (Maggie Le) Shek ,  Li-Qun Xia

发明人： Amir Al-Bayati ,  Alexandros T. Demos ,  Kang Sub Yim ,  Mehul Naik ,  Zhenjiang “David” Cui ,  Mihaela Balseanu ,  Meiyee (Maggie Le) Shek ,  Li-Qun Xia

IPC分类号： H01L21/76

CPC分类号： H01L21/7682 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76825 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76885

摘要： A method and apparatus for generating air gaps in a dielectric material of an interconnect structure. One embodiment provides a method for forming a semiconductor structure comprising depositing a first dielectric layer on a substrate, forming trenches in the first dielectric layer, filling the trenches with a conductive material, planarizing the conductive material to expose the first dielectric layer, depositing a dielectric barrier film on the conductive material and exposed first dielectric layer, depositing a hard mask layer over the dielectric barrier film, forming a pattern in the dielectric barrier film and the hard mask layer to expose selected regions of the substrate, oxidizing at least a portion of the first dielectric layer in the selected region of the substrate, removing oxidized portion of the first dielectric layer to form reversed trenches around the conductive material, and forming air gaps in the reversed trenches while depositing a second dielectric material in the reversed trenches.

摘要翻译： 一种用于在互连结构的电介质材料中产生气隙的方法和装置。 一个实施例提供了一种用于形成半导体结构的方法，包括在衬底上沉积第一介电层，在第一介电层中形成沟槽，用导电材料填充沟槽，平坦化导电材料以暴露第一介电层， 在导电材料和暴露的第一电介质层上的阻挡膜，在介电阻挡膜上沉积硬掩模层，在介电阻挡膜和硬掩模层中形成图案，以暴露衬底的选定区域，氧化至少一部分 在衬底的选定区域中的第一介电层，去除第一电介质层的氧化部分以在导电材料周围形成反向沟槽，以及在反向沟槽中形成气隙，同时在反向沟槽中沉积第二电介质材料。

公开(公告)号：US07749563B2

公开(公告)日：2010-07-06

申请号：US10266551

申请日：2002-10-07

申请人： Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia

发明人： Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia

IPC分类号： C23C16/00

CPC分类号： H01L21/02167 ,  C23C16/0272 ,  C23C16/325 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/314 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76832

摘要： A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials. A method is provided for depositing a silicon carbide cap layer that has substantially no phenyl groups attached to silicon atoms from a processing gas comprising an oxygen-free organosilicon compound on a low k silicon carbide barrier layer.

摘要翻译： 提供了一种处理基材的方法，包括提供包含含有苯基的有机硅化合物的处理气体至处理室，并使处理气体反应沉积在大马士革或双镶嵌中可用作阻挡层的低k碳化硅阻挡层 低k电介质材料的应用。 提供了一种用于沉积在低k碳化硅阻挡层上基本上没有从包含无氧有机硅化合物的处理气体连接到硅原子上的苯基沉积碳化硅盖层的方法。

公开(公告)号：US07700486B2

公开(公告)日：2010-04-20

申请号：US11424723

申请日：2006-06-16

申请人： Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Sohyun Park ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： H01L21/44 ,  G01F7/00

CPC分类号： H01L21/02126 ,  C23C16/4404 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/76829 ,  Y10S438/913

摘要： A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

摘要翻译： 提供了调节室的方法和在室中的基板上沉积低介电常数层。 在一个方面，所述方法包括用包含一种或多种有机硅化合物和一种或多种氧化性气体的第一混合物来调节室，并且从室内的衬底上沉积低介电常数层，所述第二混合物包含一种或多种有机硅化合物和 一种或多种氧化性气体，其中有机硅化合物的总流量与第一混合物中的氧化气体的总流量的比率低于有机硅化合物的总流量与氧化物的总流量的比率 第二混合物中的气体。

公开(公告)号：US20090305514A1

公开(公告)日：2009-12-10

申请号：US12506954

申请日：2009-07-21

申请人： Francimar Campana Schmitt ,  Li-Qun Xia ,  Son Van Nguyen ,  Shankar Venkataraman

发明人： Francimar Campana Schmitt ,  Li-Qun Xia ,  Son Van Nguyen ,  Shankar Venkataraman

IPC分类号： H01L21/316 ,  H01L21/314

CPC分类号： H01L21/76835 ,  C23C16/0272 ,  C23C16/30 ,  C23C16/325 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832

摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.

摘要翻译： 提供了用于处理用于沉积在两个低k电介质层之间具有低介电常数的粘合层的衬底的方法。 一方面，本发明提供了一种处理衬底的方法，包括在衬底上沉积阻挡层，其中阻挡层包括硅和碳并具有小于4的介电常数，沉积与阻挡层相邻的电介质起始层，以及 沉积与电介质起始层相邻的第一电介质层，其中介电层包括硅，氧和碳并且具有约3或更小的介电常数。