公开(公告)号：US08779526B2

公开(公告)日：2014-07-15

申请号：US13283603

申请日：2011-10-28

Applicant: Chun-Wei Hsu ,  Po-Cheng Huang ,  Ren-Peng Huang ,  Jie-Ning Yang ,  Chia-Lin Hsu ,  Teng-Chun Tsai ,  Chih-Hsun Lin ,  Chang-Hung Kung ,  Yen-Ming Chen ,  Yu-Ting Li

Inventor： Chun-Wei Hsu ,  Po-Cheng Huang ,  Ren-Peng Huang ,  Jie-Ning Yang ,  Chia-Lin Hsu ,  Teng-Chun Tsai ,  Chih-Hsun Lin ,  Chang-Hung Kung ,  Yen-Ming Chen ,  Yu-Ting Li

IPC: H01L29/78

CPC classification number: H01L27/0629

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation (STI) on the substrate of the resistor region; forming a tank in the STI of the resistor region; and forming a resistor in the tank and on the surface of the STI adjacent to two sides of the tank.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供具有晶体管区域和电阻器区域的衬底; 在电阻器区域的衬底上形成浅沟槽隔离（STI）; 在电阻区域的STI中形成槽; 并且在罐中形成电阻器，并且在与槽的两侧相邻的STI的表面上形成电阻器。

公开(公告)号：US08779445B2

公开(公告)日：2014-07-15

申请号：US12179160

申请日：2008-07-24

Applicant: Chen-Hua Yu ,  Hung-Ta Lin ,  Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chia-Lin Yu

Inventor： Chen-Hua Yu ,  Hung-Ta Lin ,  Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chia-Lin Yu

IPC: H01L29/18

CPC classification number: H01L33/44 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12

Abstract: A light emitting diodes (LEDs) is presented. The LED includes a stress-alleviation layer on a substrate. Open regions and stress-alleviation layer regions are formed on the substrate. Epitaxial layers are disposed on the substrate, at least in the open regions therein, thereby forming an LED structure. The substrate is diced through at least a first portion of the stress-alleviation regions, thereby forming the plurality of LEDs.

Abstract translation: 提供了发光二极管（LED）。 LED在衬底上包括应力消除层。 在基板上形成开放区域和应力缓和层区域。 外延层至少在其中的开放区域中设置在基板上，从而形成LED结构。 通过应力缓解区域的至少第一部分切割衬底，从而形成多个LED。

公开(公告)号：USD693338S1

公开(公告)日：2013-11-12

申请号：US29423747

申请日：2012-06-05

Applicant: Li-Fang Chen ,  Shi-Kuan Chen ,  Hong-Tien Wang ,  Chih-Wen Chiang ,  Yung-Hsiang Chen ,  Ting-Wei Wu ,  Pei-Pin Huang ,  Chia-Lin Chan ,  Jun-Jie Chen

Designer： Li-Fang Chen ,  Shi-Kuan Chen ,  Hong-Tien Wang ,  Chih-Wen Chiang ,  Yung-Hsiang Chen ,  Ting-Wei Wu ,  Pei-Pin Huang ,  Chia-Lin Chan ,  Jun-Jie Chen

公开(公告)号：US08543400B2

公开(公告)日：2013-09-24

申请号：US12135026

申请日：2008-06-06

Applicant: Lin-Shan Lee ,  Che-Kuang Lin ,  Chia-Lin Chang ,  Yi-Jing Lin ,  Yow-Bang Wang ,  Yun-Huan Lee ,  Li-Wei Cheng

Inventor： Lin-Shan Lee ,  Che-Kuang Lin ,  Chia-Lin Chang ,  Yi-Jing Lin ,  Yow-Bang Wang ,  Yun-Huan Lee ,  Li-Wei Cheng

IPC: G10L15/06 ,  G10L15/10 ,  G10L15/26

CPC classification number: G09B19/06 ,  G09B19/04 ,  G10L15/26

Abstract: Voice processing methods and systems are provided. An utterance is received. The utterance is compared with teaching materials according to at least one matching algorithm to obtain a plurality of matching values corresponding to a plurality of voice units of the utterance. Respective voice units are scored in at least one first scoring item according to the matching values and a personified voice scoring algorithm. The personified voice scoring algorithm is generated according to training utterances corresponding to at least one training sentence in a phonetic-balanced sentence set of a plurality of learners and at least one real teacher, and scores corresponding to the respective voice units of the training utterances of the learners in the first scoring item provided by the real teacher.

Abstract translation: 提供语音处理方法和系统。 收到一个话语。 根据至少一个匹配算法将话语与教材进行比较，以获得与语音的多个语音单元对应的多个匹配值。 根据匹配值和个性化语音评分算法，在至少一个第一评分项目中对相应的语音单元进行评分。 根据与多个学习者和至少一个真实老师的语音平衡语句集中的至少一个训练句相对应的训练语音产生个性化语音评分算法，以及与训练语音的各个语音单元相对应的分数 在真正的老师提供的第一个得分项目中的学习者。

公开(公告)号：US08519414B2

公开(公告)日：2013-08-27

申请号：US13237181

申请日：2011-09-20

Applicant: Chia-Lin Yu ,  Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

Inventor： Chia-Lin Yu ,  Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

IPC: H01L27/15

CPC classification number: H01L33/04 ,  H01L33/12 ,  H01L33/32

Abstract: A semiconductor structure includes a substrate and a conductive carrier-tunneling layer over and contacting the substrate. The conductive carrier-tunneling layer includes first group-III nitride (III-nitride) layers having a first bandgap, wherein the first III-nitride layers have a thickness less than about 5 nm; and second III-nitride layers having a second bandgap lower than the first bandgap, wherein the first III-nitride layers and the second III-nitride layers are stacked in an alternating pattern. The semiconductor structure is free from a III-nitride layer between the substrate and the conductive carrier-tunneling layer. The semiconductor structure further includes an active layer over the conductive carrier-tunneling layer.

Abstract translation: 半导体结构包括衬底和与衬底接触的导电载体隧穿层。 导电载体隧穿层包括具有第一带隙的第一III族氮化物（III族氮化物）层，其中第一III族氮化物层具有小于约5nm的厚度; 和具有比第一带隙低的第二带隙的第二III族氮化物层，其中第一III族氮化物层和第二III族氮化物层以交替图案堆叠。 半导体结构在衬底和导电载体 - 隧穿层之间不含III族氮化物层。 半导体结构还包括在导电载体 - 隧穿层上的有源层。

公开(公告)号：US08513128B2

公开(公告)日：2013-08-20

申请号：US13162776

申请日：2011-06-17

Applicant: Chun-Wei Hsu ,  Po-Cheng Huang ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Chih-Hsun Lin ,  Chang-Hung Kung ,  Chia-His Chen ,  Yen-Ming Chen

Inventor： Chun-Wei Hsu ,  Po-Cheng Huang ,  Teng-Chun Tsai ,  Chia-Lin Hsu ,  Chih-Hsun Lin ,  Chang-Hung Kung ,  Chia-His Chen ,  Yen-Ming Chen

IPC: H01L21/304 ,  H01L21/306 ,  B44C1/22

CPC classification number: H01L21/31053 ,  H01L21/02065 ,  H01L29/517 ,  H01L29/66545

Abstract: A poly opening polish process includes the following steps. A semi-finished semiconductor component is provided. The semi-finished semiconductor component includes a substrate, a gate disposed on the substrate, and a dielectric layer disposed on the substrate and covering the gate. A first polishing process is applied onto the dielectric layer. A second polishing process is applied to the gate. The second polishing process utilizes a wetting solution including a water soluble polymer surfactant, an alkaline compound and water. The poly opening polish process can effectively remove an oxide residue formed in the chemical mechanical polish, thereby improving the performance of the integrated circuit and reducing the production cost of the integrated circuit.

Abstract translation: 多孔抛光工艺包括以下步骤。 提供半成品半导体元件。 半成品半导体部件包括基板，设置在基板上的栅极和设置在基板上并覆盖栅极的电介质层。 将第一抛光工艺施加到电介质层上。 第二次抛光工艺应用于浇口。 第二抛光工艺利用包含水溶性聚合物表面活性剂，碱性化合物和水的润湿溶液。 多孔抛光工艺可有效去除化学机械抛光中形成的氧化物残留物，从而提高集成电路的性能，降低集成电路的生产成本。

公开(公告)号：US08507940B2

公开(公告)日：2013-08-13

申请号：US12879584

申请日：2010-09-10

Applicant: Chen-Hua Yu ,  Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Pin Hung ,  Chien Ling Hwang

Inventor： Chen-Hua Yu ,  Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Pin Hung ,  Chien Ling Hwang

IPC: H01L33/00

CPC classification number: H01L21/76898 ,  H01L21/3065 ,  H01L21/486 ,  H01L21/6835 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L33/005 ,  H01L33/0054 ,  H01L33/486 ,  H01L33/62 ,  H01L33/641 ,  H01L33/644 ,  H01L33/647 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/32506 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48233 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2933/0066 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The package substrates with through silicon plugs (or vias) described above provide lateral and vertical heat dissipation pathways for semiconductor chips that require thermal management. Designs of through silicon plugs (TSPs) with high duty ratios can most effectively provide heat dissipation. TSP designs with patterns of double-sided combs can provide high duty ratios, such as equal to or greater than 50%. Package substrates with high duty ratios are useful for semiconductor chips that generate large amount of heat. An example of such semiconductor chip is a light-emitting diode (LED) chip.

Abstract translation: 具有上述通孔硅封装（或通孔）的封装衬底为需要热管理的半导体芯片提供侧向和垂直散热​​路径。 具有高占空比的通过硅插头（TSP）的设计可以最有效地提供散热。 具有双面梳状图案的TSP设计可以提供等于或大于50％的高占空比。 具有高占空比的封装衬底对于产生大量热量的半导体芯片是有用的。 这种半导体芯片的例子是发光二极管（LED）芯片。

公开(公告)号：US08486807B2

公开(公告)日：2013-07-16

申请号：US12972184

申请日：2010-12-17

Applicant: Chen-Hua Yu ,  Chia-Lin Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

Inventor： Chen-Hua Yu ,  Chia-Lin Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02617 ,  H01L21/02664

Abstract: A method of forming a semiconductor structure includes providing a substrate; forming a buffer/nucleation layer over the substrate; forming a group-III nitride (III-nitride) layer over the buffer/nucleation layer; and subjecting the III-nitride layer to a nitridation. The step of forming the III-nitride layer comprises metal organic chemical vapor deposition.

Abstract translation: 形成半导体结构的方法包括提供基板; 在衬底上形成缓冲/成核层; 在缓冲/成核层上形成III族氮化物（III族氮化物）层; 并对该III族氮化物层进行氮化。 形成III族氮化物层的步骤包括金属有机化学气相沉积。

公开(公告)号：US08479986B2

公开(公告)日：2013-07-09

申请号：US13218178

申请日：2011-08-25

Applicant: Horng-Ji Chen ,  Yu-Chyang Cheng ,  Chia-Lin Kuo

Inventor： Horng-Ji Chen ,  Yu-Chyang Cheng ,  Chia-Lin Kuo

IPC: G06K5/00

CPC classification number: G07F7/069 ,  G07G1/009

Abstract: An RFID-based book return apparatus has dual touch screen and operation interface that conforms to a standard for barrier-free design. It has the following features: automatically detecting RFID tags attached on the identification cards of borrowers and attached to books to be returned, and enabling a panel covering a book-return gate to open; adopting a high-density optical sensor array to prevent the borrower's hand from being clamped accidentally by the cover panel of the book-return gate; enabling an access panel of the book return apparatus to open/close automatically according to the RFID tag detection book return apparatus, facilitating the maintenance and repair of the book return apparatus; preventing any components, papers and books in the book return apparatus from wet damage due to rainfall or moisture by installing a waterproof device on the RFID-based book return apparatus.

Abstract translation: 基于RFID的书籍返回装置具有符合无障碍设计标准的双触摸屏和操作界面。 它具有以下特点：自动检测附在借款人身份证上的RFID标签，并附加到要退回的书籍上，并启用覆盖书籍返回门的面板打开; 采用高密度光学传感器阵列，防止借书者的手被书返门的盖板意外夹紧; 使得书本返回装置的检修面板能够根据RFID标签检测书返回装置自动打开/关闭，便于书本返回装置的维护和修理; 通过在基于RFID的书本返回装置上安装防水装置，防止书籍返回装置中的任何部件，纸张和书籍由于降雨或潮湿而受到湿损伤。

公开(公告)号：US08446052B2

公开(公告)日：2013-05-21

申请号：US12875137

申请日：2010-09-03

Applicant: Chia-Lin Lee

Inventor： Chia-Lin Lee

IPC: H02J7/00

CPC classification number: G06F1/206 ,  G06F1/3203

Abstract: A heat dissipating device is used in an electronic apparatus. The electronic apparatus includes a standby unit and a power supply. The heat dissipating device includes a delay unit connected to the standby unit, a switch connected to the delay unit and the power supply, and a heat sink connected to the switch. The delay unit turns on the switch when the electronic apparatus operates in a working mode, and the delay unit turns off the switch after a predetermined delay time when the electronic apparatus enters a standby mode.

Abstract translation: 在电子设备中使用散热装置。 电子设备包括备用单元和电源。 散热装置包括连接到待机单元的延迟单元，连接到延迟单元和电源的开关以及连接到开关的散热器。 当电子设备工作在工作模式时，延迟单元接通开关，并且延迟单元在电子设备进入待机模式的预定延迟时间之后关闭开关。