公开(公告)号：US08946742B2

公开(公告)日：2015-02-03

申请号：US12897124

申请日：2010-10-04

申请人： Chen-Hua Yu ,  Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Pin Hung ,  Chien Ling Hwang

发明人： Chen-Hua Yu ,  Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Pin Hung ,  Chien Ling Hwang

IPC分类号： H01L33/00 ,  H01L21/768 ,  H01L21/683 ,  H01L23/48 ,  H01L33/48 ,  H01L33/64 ,  H01L21/48 ,  H01L23/14 ,  H01L23/498 ,  H01L23/00 ,  H01L33/62

CPC分类号： H01L21/76898 ,  H01L21/3065 ,  H01L21/486 ,  H01L21/6835 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L33/005 ,  H01L33/0054 ,  H01L33/486 ,  H01L33/62 ,  H01L33/641 ,  H01L33/644 ,  H01L33/647 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/32506 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48233 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2933/0066 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The substrate with through silicon plugs (or vias) described above removes the need for conductive bumps. The process flow is very simple and cost efficient. The structures described combines the separate TSV, redistribution layer, and conductive bump structures into a single structure. By combining the separate structures, a low resistance electrical connection with high heat dissipation capability is created. In addition, the substrate with through silicon plugs (or vias, or trenches) also allows multiple chips to be packaged together. A through silicon trench can surround the one or more chips to provide protection against copper diffusing to neighboring devices during manufacturing. In addition, multiple chips with similar or different functions can be integrated on the TSV substrate. Through silicon plugs with different patterns can be used under a semiconductor chip(s) to improve heat dissipation and to resolve manufacturing concerns.

摘要翻译： 具有上述通孔硅衬底（或通孔）的基板消除了对导电凸块的需要。 流程非常简单，成本效益高。 所描述的结构将单独的TSV，再分配层和导电凸块结构组合成单个结构。 通过组合单独的结构，产生具有高散热能力的低电阻电连接。 此外，具有通过硅插头（或通孔或沟槽）的基板还允许将多个芯片封装在一起。 通过硅沟槽可围绕一个或多个芯片，以在制造期间提供防止铜扩散到相邻器件的保护。 此外，具有相似或不同功能的多个芯片可以集成在TSV基板上。 通过具有不同图案的硅插头可以在半导体芯片下使用以改善散热并解决制造问题。

公开(公告)号：US08507940B2

公开(公告)日：2013-08-13

申请号：US12879584

申请日：2010-09-10

申请人： Chen-Hua Yu ,  Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Pin Hung ,  Chien Ling Hwang

发明人： Chen-Hua Yu ,  Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Pin Hung ,  Chien Ling Hwang

IPC分类号： H01L33/00

CPC分类号： H01L21/76898 ,  H01L21/3065 ,  H01L21/486 ,  H01L21/6835 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L33/005 ,  H01L33/0054 ,  H01L33/486 ,  H01L33/62 ,  H01L33/641 ,  H01L33/644 ,  H01L33/647 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/32506 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48233 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2933/0066 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The package substrates with through silicon plugs (or vias) described above provide lateral and vertical heat dissipation pathways for semiconductor chips that require thermal management. Designs of through silicon plugs (TSPs) with high duty ratios can most effectively provide heat dissipation. TSP designs with patterns of double-sided combs can provide high duty ratios, such as equal to or greater than 50%. Package substrates with high duty ratios are useful for semiconductor chips that generate large amount of heat. An example of such semiconductor chip is a light-emitting diode (LED) chip.

摘要翻译： 具有上述通孔硅封装（或通孔）的封装衬底为需要热管理的半导体芯片提供侧向和垂直散热​​路径。 具有高占空比的通过硅插头（TSP）的设计可以最有效地提供散热。 具有双面梳状图案的TSP设计可以提供等于或大于50％的高占空比。 具有高占空比的封装衬底对于产生大量热量的半导体芯片是有用的。 这种半导体芯片的例子是发光二极管（LED）芯片。

公开(公告)号：US20120068218A1

公开(公告)日：2012-03-22

申请号：US12884570

申请日：2010-09-17

申请人： Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Ping Hung ,  Chien Ling Hwang ,  Chen-Hua Yu

发明人： Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Ping Hung ,  Chien Ling Hwang ,  Chen-Hua Yu

IPC分类号： H01L33/62 ,  H01L21/50

CPC分类号： H01L33/642 ,  H01L33/486 ,  H01L33/647 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2933/0033 ,  H01L2933/0075 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present disclosure provides a method of packaging for a photonic device, such as a light-emitting diode device. The packaging includes an insulating structure. The packaging includes first and second conductive structures that each extend through the insulating structure. A substantial area of a bottom surface of the light-emitting diode device is in direct contact with a top surface of the first conductive structure. A top surface of the light-emitting diode device is bonded to the second conductive structure through a bonding wire.

摘要翻译： 本公开提供了一种用于光子器件（例如发光二极管器件）的封装方法。 包装包括绝缘结构。 该包装包括各自延伸穿过绝缘结构的第一和第二导电结构。 发光二极管器件的底面的实质区域与第一导电结构的顶表面直接接触。 发光二极管器件的顶表面通过接合线接合到第二导电结构。

公开(公告)号：US20100285723A1

公开(公告)日：2010-11-11

申请号：US12437315

申请日：2009-05-07

申请人： Yu-Liang Lin ,  Chien Ling Hwang ,  Jean Wang ,  Chen-Hua Yu

发明人： Yu-Liang Lin ,  Chien Ling Hwang ,  Jean Wang ,  Chen-Hua Yu

IPC分类号： B24B49/16 ,  B24B7/22 ,  B24B49/08 ,  B24B53/02 ,  B24B57/02

CPC分类号： B24B57/02 ,  B24B37/107 ,  B24B53/017 ,  H01L21/02052

摘要： A chemical mechanical polishing (CMP) device for processing a wafer is provided which includes a plate for supporting the wafer to be processed in a face-up orientation, a polishing head opposing the plate, wherein the polishing head includes a rotatable polishing pad operable to contact the wafer while the polishing pad is rotating, and a slurry coating system providing a slurry to the polishing pad for polishing the wafer.

摘要翻译： 提供了一种用于处理晶片的化学机械抛光（CMP）装置，其包括用于以面朝上的方向支撑待加工的晶片的板，与该板相对的抛光头，其中抛光头包括可旋转的抛光垫， 在抛光垫旋转的同时接触晶片;以及浆料涂覆系统，其向抛光垫提供浆料以抛光晶片。

公开(公告)号：US20120227886A1

公开(公告)日：2012-09-13

申请号：US13045365

申请日：2011-03-10

申请人： Yi-Li Hsiao ,  Chen-Hua Yu ,  Chung-Shi Liu ,  Chien Ling Hwang ,  Ying-Jui Huang

发明人： Yi-Li Hsiao ,  Chen-Hua Yu ,  Chung-Shi Liu ,  Chien Ling Hwang ,  Ying-Jui Huang

IPC分类号： B32B37/00 ,  B23B31/28 ,  H01L21/673 ,  B23K31/02

CPC分类号： H01L21/6833 ,  H01L21/67346 ,  Y10T29/49998 ,  Y10T156/10 ,  Y10T279/23

摘要： A portable electrostatic chuck carrier includes a holder having a dielectric top surface, and bipolar electrodes under the dielectric top surface. The bipolar electrodes includes positive electrodes and negative electrodes electrically insulated from the positive electrodes. The positive electrodes and the negative electrodes are allocated in an alternating pattern in a plane substantially parallel to the dielectric top surface.

摘要翻译： 便携式静电卡盘托架包括具有电介质顶表面的保持器和在电介质顶表面下方的双极电极。 双极电极包括与正极电绝缘的正极和负极。 正电极和负电极在基本上平行于电介质顶表面的平面中以交替图案分配。

公开(公告)号：US08652260B2

公开(公告)日：2014-02-18

申请号：US12347580

申请日：2008-12-31

申请人： Chen-Hua Yu ,  Chien Ling Hwang

发明人： Chen-Hua Yu ,  Chien Ling Hwang

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/68742 ,  H01L21/67103 ,  H01L21/6831 ,  H01L21/6833

摘要： Apparatus for holding semiconductor wafers during semiconductor manufacturing processes are disclosed. In one embodiment, the apparatus comprises a heat-conductive layer disposed on a supporting base. The apparatus also comprises a plurality of holes formed through the heat-conductive layer and the supporting base. The apparatus further comprises a plurality of heat-conductive lift pins that extend through the holes over the heat-conductive layer at the top end, and make a direct contact with a wafer substrate. The heat-conductive layer and the lift pins are connected to a heating circuit.

摘要翻译： 公开了用于在半导体制造工艺期间保持半导体晶片的装置。 在一个实施例中，该装置包括设置在支撑基座上的导热层。 该装置还包括穿过导热层和支撑基底形成的多个孔。 该装置还包括多个导热提升销，其在顶端延伸穿过导热层上的孔，并与晶片衬底直接接触。 导热层和提升销连接到加热电路。

公开(公告)号：US20130167373A1

公开(公告)日：2013-07-04

申请号：US13527459

申请日：2012-06-19

申请人： Chien Ling Hwang ,  Yeong-Jyh Lin ,  Yi-Li Hsiao ,  Ming-Da Cheng ,  Tsai-Tsung Tsai ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

发明人： Chien Ling Hwang ,  Yeong-Jyh Lin ,  Yi-Li Hsiao ,  Ming-Da Cheng ,  Tsai-Tsung Tsai ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

IPC分类号： B26D7/27 ,  H01R43/00

CPC分类号： H01L24/11 ,  H01L21/4853 ,  H01L24/13 ,  H01L24/78 ,  H01L2224/056 ,  H01L2224/1111 ,  H01L2224/1134 ,  H01L2224/13005 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/451 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48 ,  H01L2224/7855 ,  H01L2224/78621 ,  H01L2224/85051 ,  H01L2224/854 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/206 ,  Y10T29/49192 ,  Y10T29/49213 ,  Y10T29/514 ,  Y10T29/5177 ,  Y10T29/53217 ,  Y10T29/53235 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/01049 ,  H01L2224/4554

摘要： An apparatus includes a spool configured to supply a wire, a cutting device configured to form a notch in the wire, and a capillary configured to bond the wire and to form a stud bump. The apparatus is further configured to pull the wire to break at the notch, with a tail region attached to the stud bump.

公开(公告)号：US20120211547A1

公开(公告)日：2012-08-23

申请号：US13031040

申请日：2011-02-18

申请人： Yi-Li Hsiao ,  Chen-Hua Yu ,  Chung-Shi Liu ,  Chien Ling Hwang

发明人： Yi-Li Hsiao ,  Chen-Hua Yu ,  Chung-Shi Liu ,  Chien Ling Hwang

IPC分类号： B23K1/20 ,  B23K3/08

CPC分类号： B23K1/203 ,  B23K3/082

摘要： A flux dipping apparatus includes a flux plate having a top surface; and a dipping cavity in the flux plate and recessed from the top surface. A flux leveler is disposed over the flux plate and configured to move parallel to the top surface. A piezoelectric actuator is configured to adjust a distance between the flux leveler and the top surface in response to a controlling voltage applied to electrodes of the first piezoelectric actuator.

摘要翻译： 焊剂浸渍装置包括具有顶表面的焊剂板; 以及在焊剂板中的浸入腔并且从顶表面凹陷。 助熔剂矫正器设置在焊剂板上方并且被配置成平行于顶表面移动。 压电致动器被配置为响应于施加到第一压电致动器的电极的控制电压来调节通量调节器和顶表面之间的距离。

公开(公告)号：US09021682B2

公开(公告)日：2015-05-05

申请号：US13527459

申请日：2012-06-19

申请人： Chien Ling Hwang ,  Yeong-Jyh Lin ,  Yi-Li Hsiao ,  Ming-Da Cheng ,  Tsai-Tsung Tsai ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

发明人： Chien Ling Hwang ,  Yeong-Jyh Lin ,  Yi-Li Hsiao ,  Ming-Da Cheng ,  Tsai-Tsung Tsai ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

IPC分类号： H01R43/052 ,  H01L21/48 ,  H01L23/00

CPC分类号： H01L24/11 ,  H01L21/4853 ,  H01L24/13 ,  H01L24/78 ,  H01L2224/056 ,  H01L2224/1111 ,  H01L2224/1134 ,  H01L2224/13005 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/451 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48 ,  H01L2224/7855 ,  H01L2224/78621 ,  H01L2224/85051 ,  H01L2224/854 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/206 ,  Y10T29/49192 ,  Y10T29/49213 ,  Y10T29/514 ,  Y10T29/5177 ,  Y10T29/53217 ,  Y10T29/53235 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/01049 ,  H01L2224/4554

摘要： An apparatus includes a spool configured to supply a wire, a cutting device configured to form a notch in the wire, and a capillary configured to bond the wire and to form a stud bump. The apparatus is further configured to pull the wire to break at the notch, with a tail region attached to the stud bump.

摘要翻译： 一种装置包括：线圈，其被配置为供应线，被配置为在所述线中形成切口的切割装置，以及被配置为结合所述线并形成柱形凸块的毛细管。 该设备还被配置为拉动线在凹口处断裂，尾部区域附接到柱形凸块。

公开(公告)号：US08540136B1

公开(公告)日：2013-09-24

申请号：US13605403

申请日：2012-09-06

申请人： Yeong-Jyh Lin ,  Hsin-Hung Liao ,  Chien Ling Hwang ,  Yi-Li Hsiao ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

发明人： Yeong-Jyh Lin ,  Hsin-Hung Liao ,  Chien Ling Hwang ,  Yi-Li Hsiao ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu

IPC分类号： B23K31/02 ,  B23K37/00

CPC分类号： B23K31/02 ,  B21D53/36 ,  B23K20/007 ,  H01L2224/78301 ,  Y10T29/49

摘要： Methods for forming stud bumps and apparatuses for forming stud bumps are disclosed. According to an embodiment, a method includes clamping a wire with a clamp. The clamp includes at least two opposing plates, and at least one of the opposing plates includes a protruding feature that intersects the wire when the wire is clamped forming a first notch in the wire. The method further includes bonding the wire to a bonding surface, releasing the wire from the clamp, passing the wire a notch pitch distance through the clamp, clamping the wire with the clamp forming a second notch in the wire, and breaking the wire leaving a bonded portion of the wire on the bonding surface. The second notch is the notch pitch distance from the first notch along the wire.

摘要翻译： 公开了用于形成柱形凸块的方法和用于形成凸块凸块的装置。 根据实施例，一种方法包括用夹具夹紧线。 所述夹具包括至少两个相对的板，并且当所述线被夹紧形成所述线中的第一凹口时，所述相对板中的至少一个包括与所述线相交的突出特征。 该方法还包括将线接合到接合表面，将线从夹具中释放出来，使线穿过钳口的间距距离通过夹具夹紧线，夹具在线中形成第二凹口，并将线断开， 接合表面上的导线的接合部分。 第二个凹口是距离第一个凹口沿导线的切口间距距离。