公开(公告)号：US20150318210A1

公开(公告)日：2015-11-05

申请号：US14265672

申请日：2014-04-30

Applicant: International Business Machines Corporation

Inventor： RUSSELL A. BUDD ,  Bing Dang ,  John U. Knickerbocker

IPC: H01L21/78 ,  B23K26/36 ,  H01L21/67 ,  H01L21/304 ,  H01L21/268 ,  H01L21/306

CPC classification number: B23K26/364 ,  B23K26/0624 ,  B23K26/0626 ,  B23K26/18 ,  B23K26/38 ,  B23K26/402 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/304 ,  H01L21/306 ,  H01L21/67115 ,  H01L21/78

Abstract: A method includes cutting a semiconductor wafer on a substrate wafer using at least one laser. By setting the laser to a set of parameters that define a laser beam, the laser beam can avoid ablation of the substrate wafer. The laser beam is also set equal to, or within, an ablation threshold of the semiconductor wafer for selectively ablating the semiconductor wafer. The set of parameters includes wavelength, pulse width and pulse frequency.

Abstract translation: 一种方法包括使用至少一个激光切割衬底晶片上的半导体晶片。 通过将激光器设置为限定激光束的一组参数，激光束可以避免衬底晶片的烧蚀。 激光束也被设置为等于或在半导体晶片的消融阈值内，以选择性地烧蚀半导体晶片。 该组参数包括波长，脉冲宽度和脉冲频率。

公开(公告)号：US20150287960A1

公开(公告)日：2015-10-08

申请号：US14340253

申请日：2014-07-24

Applicant: International Business Machines Corporation

Inventor： Paul S. Andry ,  Joana Sofia Branquinho Teresa Maria ,  Bing Dang ,  Michael A. Gaynes ,  John U. Knickerbocker ,  Eric P. Lewandowski ,  Cornelia K. Tsang ,  Bucknell C. Webb

IPC: H01M2/02 ,  A61B5/145 ,  A61F9/00 ,  G02C7/08

CPC classification number: H01M2/0202 ,  A61B5/145 ,  A61B2562/028 ,  C25D1/04 ,  C25D1/22 ,  C25D3/22 ,  C25D3/54 ,  C25D3/56 ,  C25D3/565 ,  C25D5/02 ,  C25D5/10 ,  C25D5/50 ,  G02C7/083 ,  H01M4/139 ,  H01M4/38 ,  H01M4/42 ,  H01M4/48 ,  H01M4/50 ,  H01M4/661 ,  H01M4/664 ,  H01M10/0436 ,  H01M2002/0205 ,  H01M2004/027 ,  H01M2004/028 ,  Y10T29/49108 ,  Y10T29/49115

Abstract: A system comprising a first dielectric element and a second dielectric element each having a first surface, wherein the first surface of the first dielectric element and the first surface of the second dielectric element are joined. The system further comprises one or more enclosed voids within the joined first and second dielectric elements. The system further comprises a flexible battery in a first enclosed void of the one or more enclosed voids, the flexible battery having a thickness of less than about 150 microns.

Abstract translation: 一种包括第一介电元件和第二介电元件的系统，每个第一介质元件和第二介质元件均具有第一表面，其中第一介电元件的第一表面和第二介电元件的第一表面被接合。 该系统还包括在所接合的第一和第二介电元件内的一个或多个封闭的空隙。 该系统还包括在一个或多个封闭空隙的第一封闭空间中的柔性电池，柔性电池具有小于约150微米的厚度。

公开(公告)号：US20150229295A1

公开(公告)日：2015-08-13

申请号：US14178791

申请日：2014-02-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Paul S. Andry ,  Leland Chang ,  Evan G. Colgan ,  John U. Knickerbocker ,  Bucknell C. Webb ,  Robert Wisnieff

IPC: H03K3/012 ,  H02M3/156 ,  H02M1/08

CPC classification number: H02M3/156 ,  G05F3/02 ,  G06F1/26 ,  G06F1/263 ,  G06F1/266 ,  H01L23/5286 ,  H01L23/64 ,  H01L23/642 ,  H01L23/645 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L25/065 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/1436 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19103 ,  H02M1/08 ,  H05K1/00 ,  Y10T29/49117 ,  H01L2224/11 ,  H01L2924/014

Abstract: A switching power supply in an integrated circuit, an integrated circuit comprising a switching power supply, and a method of assembling a switching power supply in an integrated circuit are disclosed. In one embodiment, the invention provides a three-dimensional switching power supply in an integrated circuit comprising a device layer. The switching power supply comprises three distinct strata arranged in series with the device layer, the three distinct strata including a switching layer including switching circuits, a capacitor layer including banks of capacitors, and an inductor layer including inductors. This switching power supply further comprises a multitude of connectors electrically and mechanically connecting together the device layer, the switching layer, the capacitor layer, and the inductor layer. The switching circuits, the capacitors and the inductors form a switching power supply for supplying power to the device layer.

Abstract translation: 公开了一种集成电路中的开关电源，包括开关电源的集成电路和集成电路中的开关电源的组装方法。 在一个实施例中，本发明提供了一种包括器件层的集成电路中的三维开关电源。 开关电源包括与器件层串联布置的三个不同的层，三个不同的层包括包括开关电路的开关层，包括电容器组的电容器层和包括电感器的电感器层。 该开关电源还包括将器件层，开关层，电容层和电感层电连接和机械连接在一起的大量连接器。 开关电路，电容器和电感器形成用于向器件层供电的开关电源。

公开(公告)号：US20140042607A1

公开(公告)日：2014-02-13

申请号：US14057660

申请日：2013-10-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John U. Knickerbocker

IPC: H01L23/50 ,  H01L31/0203 ,  H01L33/48

CPC classification number: H01L23/50 ,  H01L23/3128 ,  H01L25/0657 ,  H01L25/50 ,  H01L31/0203 ,  H01L33/483 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06582 ,  H01L2924/01019 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/00

Abstract: A sealable microelectronic device providing mechanical stress endurance which includes a semiconductor substrate and a method of manufacture. A substantially continuous sealing element is positioned adjacent an outer periphery and between a microelectronic component and the semiconductor substrate, or another microelectronic component. The sealing element seals the microelectronic component to the substrate or another microelectronic component, and provides structural support to the microelectronic device.

Abstract translation: 提供机械应力耐久性的可密封微电子器件，其包括半导体衬底和制造方法。 基本上连续的密封元件邻近外周和微电子元件与半导体衬底或另一微电子器件定位。 密封元件将微电子部件密封到基板或另一微电子部件，并且向微电子器件提供结构支撑。

公开(公告)号：US11766729B2

公开(公告)日：2023-09-26

申请号：US15719451

申请日：2017-09-28

Applicant: International Business Machines Corporation

Inventor： Jae-Woong Nah ,  John U. Knickerbocker ,  Eric P. Lewandowski

IPC: B23K3/06 ,  B23K3/08

CPC classification number: B23K3/0615 ,  B23K3/08

Abstract: An improved molten solder injection head having a vacuum filter and differential gauge system is provided. In one aspect, an injection head is provided. The injection head includes: a reservoir; an injection port on a bottom of the injection head connected to the reservoir; a vacuum port adjacent to the injection port on the bottom of the injection head connected to a vacuum source; and a filter disposed between the bottom of the injection head and the vacuum source. A method for molten solder injection using the present injection head is provided.

公开(公告)号：US11574835B2

公开(公告)日：2023-02-07

申请号：US16670023

申请日：2019-10-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Bing Dang ,  Jeffrey D. Gelorme ,  John U. Knickerbocker

IPC: H01L21/683 ,  C08G59/06 ,  C09J163/00 ,  C09J171/00 ,  C08L63/00 ,  C08L71/00 ,  H01L21/02 ,  C08K3/04 ,  C09J9/00

Abstract: A bonding material including a phenoxy resin thermoplastic component, and a carbon black filler component. The carbon black filler component is present in an amount greater than 1 wt. %. The carbon black filler converts the phenoxy resin thermoplastic component from a material that transmits infra-red (IR) wavelengths to a material that absorbs a substantial portion of infra-red (IR) wavelengths.

公开(公告)号：US11424152B2

公开(公告)日：2022-08-23

申请号：US16779783

申请日：2020-02-03

Applicant: International Business Machines Corporation

Inventor： Paul S. Andry ,  Bing Dang ,  Jeffrey Donald Gelorme ,  Li-Wen Hung ,  John U. Knickerbocker ,  Cornelia Kang-I Tsang

IPC: H01L21/683 ,  H01L21/78

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

公开(公告)号：US10811305B2

公开(公告)日：2020-10-20

申请号：US15272758

申请日：2016-09-22

Applicant: International Business Machines Corporation

Inventor： Li-Wen Hung ,  John U. Knickerbocker ,  Leathen Shi ,  Cornelia Tsang Yang ,  Bucknell C. Webb

IPC: H01L21/762 ,  H01L21/84 ,  H01L21/86 ,  H01L29/20 ,  H01L29/16 ,  H01L27/12 ,  H01L23/29 ,  H01L23/00 ,  H01L21/18 ,  H01L27/092 ,  H01L27/06 ,  H01L21/8258

Abstract: A multi-layer wafer and method of manufacturing such wafer are provided. The method comprises applying a stress compensating oxide layer to each of two heterogeneous wafers, applying at least one bonding oxide layer to at least one of the two heterogeneous wafers, chemical-mechanical polishing the at least one bonding oxide layer, and low temperature bonding the two heterogeneous wafers to form a multi-layer wafer pair. The multi-layer wafer comprises two heterogeneous wafers, each of the heterogeneous wafers having a stress compensating oxide layer and at least one bonding oxide layer applied to at least one of the two heterogeneous wafers. The two heterogeneous wafers are low temperature bonded together to form the multi-layer wafer.

公开(公告)号：US10670656B2

公开(公告)日：2020-06-02

申请号：US15452933

申请日：2017-03-08

Applicant: International Business Machines Corporation

Inventor： Paul S. Andry ,  Qianwen Chen ,  Bing Dang ,  John U. Knickerbocker ,  Minhua Lu ,  Robert J. Polastre ,  Bucknell C. Webb

IPC: G01R31/309 ,  H05K3/30 ,  G01R31/28 ,  H05K1/02 ,  H05K1/18

Abstract: An electro-optical module assembly is provided that includes a flexible substrate having a first surface and a second surface opposite the first surface, wherein the flexible substrate contains an opening located therein that extends from the first surface to the second surface. An optical component is located on the second surface of the flexible substrate and is positioned to have a surface exposed by the opening. At least one electronic component is located on a first portion of the first surface of the flexible substrate, and at least one micro-energy source is located on a second portion of the first surface of the flexible substrate.

公开(公告)号：US10651036B2

公开(公告)日：2020-05-12

申请号：US16550261

申请日：2019-08-25

Applicant: International Business Machines Corporation

Inventor： Russell A. Budd ,  Qianwen Chen ,  Bing Dang ,  Jeffrey D. Gelorme ,  Li-wen Hung ,  John U. Knickerbocker

IPC: H01L21/20 ,  B24B7/22 ,  H01L21/683 ,  H01L23/544 ,  H01L23/498 ,  H01L21/56

Abstract: Small size chip handling and electronic component integration are accomplished using handle fixturing to transfer die or other electronic components from a full area array to a targeted array. Area array dicing of a thinned device wafer on a handle wafer/panel may be followed by selective or non-selective de-bonding of targeted die or electronic components from the handle wafer and optional attachment to a carrier such as a transfer head or tape. Alignment fiducials may facilitate precision alignment of the transfer head or tape to the device wafer and subsequently to the targeted array. Alternatively, the dies or other electronic elements are transferred selectively from either a carrier or the device wafer to the targeted array.