公开(公告)号：US10292269B1

公开(公告)日：2019-05-14

申请号：US15950865

申请日：2018-04-11

Applicant: QUALCOMM Incorporated

Inventor： Niranjan Sunil Mudakatte ,  Changhan Hobie Yun ,  Jonghae Kim ,  Xiaoju Yu ,  Nosun Park ,  Mario Francisco Velez

IPC: H05K1/16 ,  H05K1/18 ,  H01L23/522 ,  H03H7/01 ,  H01L23/66 ,  H01L49/02

Abstract: An inductor-capacitor (LC) filter includes an inductor having an asymmetric shape including at least one turn. The LC filter also includes serial capacitors coupled to the inductor at only one end of a continuous portion of the inductor. The serial capacitors continues the shape of the inductor. The capacitors are outside of a footprint of the continuous portion of the inductor.

公开(公告)号：US10049815B2

公开(公告)日：2018-08-14

申请号：US15167782

申请日：2016-05-27

Applicant: QUALCOMM Incorporated

Inventor： Daeik Daniel Kim ,  Jonghae Kim ,  Chengjie Zuo ,  Mario Francisco Velez ,  Changhan Hobie Yun

IPC: H01F41/04 ,  H01F27/28 ,  H01F41/00 ,  H01F17/00

Abstract: A 3D nested transformer includes a substrate having a set of through substrate vias daisy chained together with a set of traces. At least some of the through substrate vias have first and second conductive regions. The set of traces also includes a first set of traces coupling together at least some of the first conductive regions of the through substrate vias, and a second set of traces coupling together at least some of the second conductive regions of the through substrate vias.

公开(公告)号：US10039188B2

公开(公告)日：2018-07-31

申请号：US14811813

申请日：2015-07-28

Applicant: QUALCOMM Incorporated

Inventor： Changhan Yun ,  Francesco Carobolante ,  Chengjie Zuo ,  Jonghae Kim ,  Mario Francisco Velez ,  Lawrence D. Smith ,  Matthew M. Nowak

IPC: H05K1/16 ,  H05K1/02 ,  H01L23/498 ,  H05K7/10 ,  H05K3/10 ,  H05K3/30 ,  H05K3/00

CPC classification number: H05K1/165 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L2224/16225 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/19105 ,  H05K1/0231 ,  H05K1/0243 ,  H05K1/0262 ,  H05K3/0091 ,  H05K3/10 ,  H05K3/30 ,  H05K7/1092 ,  Y10T29/4913 ,  Y10T29/49131 ,  Y10T29/49147 ,  Y10T29/49156

Abstract: A two-stage power delivery network includes a voltage regulator and an interposer. The interposer includes a packaging substrate having an embedded inductor. The embedded inductor includes a set of traces and a set of through substrate vias at opposing ends of the traces. The interposer is coupled to the voltage regulator. The two-stage power delivery network also includes a semiconductor die supported by the packaging substrate. The two-stage power delivery network also includes a capacitor that is supported by the packaging substrate. The capacitor is operable to provide a decoupling capacitance associated with the semiconductor die and a capacitance to reduce a switching noise of the voltage regulator.

公开(公告)号：US10038422B2

公开(公告)日：2018-07-31

申请号：US15247803

申请日：2016-08-25

Applicant: QUALCOMM Incorporated

Inventor： Changhan Hobie Yun ,  Je-Hsiung Lan ,  Chengjie Zuo ,  David Berdy ,  Jonghae Kim ,  Mario Velez ,  Niranjan Sunil Mudakatte ,  Shiqun Gu

IPC: H03H9/205 ,  H03H3/04 ,  H01L41/332 ,  H03H9/54 ,  H03H3/02

CPC classification number: H03H9/205 ,  H01L41/332 ,  H03H3/04 ,  H03H9/173 ,  H03H9/54 ,  H03H2003/021 ,  H03H2003/0435 ,  H03H2003/0442 ,  H03H2003/0471

Abstract: A single-die multi-FBAR (film bulk acoustic resonator) device includes multiple FBARs having different resonant frequencies formed over a single substrate. The FBARs include piezoelectric layers having different thicknesses but with upper electrodes formed at a same height over the substrate, lower electrodes at different heights over the substrate, and different sized air gaps separating the lower electrodes from the substrate.

公开(公告)号：US09875848B2

公开(公告)日：2018-01-23

申请号：US14976973

申请日：2015-12-21

Applicant: QUALCOMM Incorporated

Inventor： David Francis Berdy ,  Daeik Daniel Kim ,  Niranjan Sunil Mudakatte ,  Je-Hsiung Jeffrey Lan ,  Chengjie Zuo ,  Changhan Hobie Yun ,  Mario Francisco Velez ,  Jonghae Kim

IPC: H01G4/30 ,  H01L23/52 ,  H01G4/01 ,  H01G4/33 ,  H01L23/522 ,  H01L27/08 ,  H01L29/94 ,  H01L49/02

CPC classification number: H01G4/30 ,  H01G4/01 ,  H01G4/33 ,  H01L23/5223 ,  H01L27/0805 ,  H01L28/86 ,  H01L28/87 ,  H01L29/94

Abstract: An exemplary MIM capacitor may include a first metal plate, a dielectric layer on the first metal plate, a second metal plate on the dielectric layer, a via layer on the second metal plate, and a third metal plate on the via layer where the second metal plate has a tapered outline with a first side and a second side longer than the first side such that the second side provides a lower resistance path for a current flow.

公开(公告)号：US09806144B2

公开(公告)日：2017-10-31

申请号：US14079488

申请日：2013-11-13

Applicant: QUALCOMM Incorporated

Inventor： Daeik Daniel Kim ,  Young Kyu Song ,  Xiaonan Zhang ,  Jonghae Kim

IPC: H01L49/02 ,  H01F17/00 ,  H01F41/04

CPC classification number: H01L28/10 ,  H01F17/0013 ,  H01F41/041 ,  H01F2017/0053

Abstract: Some implementations provide an integrated device (e.g., semiconductor device) that includes a substrate and an inductor in the substrate. In some implementations, the inductor is a solenoid inductor. The inductor includes a set of windings. The set of windings has an inner perimeter. The set of windings includes a set of interconnects and a set of vias. The set of interconnects and the set of vias are located outside the inner perimeter of the set of windings. In some implementations, the set of windings further includes a set of capture pads. The set of interconnects is coupled to the set of vias through the set of capture pads. In some implementations, the set of windings has an outer perimeter. The set of pads is coupled to the set of interconnects such that the set of pads is at least partially outside the outer perimeter of the set of windings.

公开(公告)号：US09780048B1

公开(公告)日：2017-10-03

申请号：US15227919

申请日：2016-08-03

Applicant: QUALCOMM Incorporated

Inventor： David Francis Berdy ,  Changhan Hobie Yun ,  Chengjie Zuo ,  Niranjan Sunil Mudakatte ,  Mario Francisco Velez ,  Shiqun Gu ,  Jonghae Kim

IPC: H01L21/60 ,  H01L23/66 ,  H01L23/64 ,  H01L23/00 ,  H01L25/18 ,  H01L23/538 ,  H01L25/00

CPC classification number: H01L23/66 ,  H01L23/5384 ,  H01L23/642 ,  H01L23/645 ,  H01L24/13 ,  H01L24/45 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/48195 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19105 ,  H05K1/0243 ,  H05K1/025 ,  H05K1/141

Abstract: An integrated circuit device includes a first substrate having a ground plane. The integrated circuit device also includes a second substrate. The second substrate has a first layer of passive devices. The passive devices include at least one inductor on a first side of the second substrate. The first layer of passive devices is substantially orthogonal to the ground plane and the second substrate supported by the first substrate. An inductor magnetic field is substantially parallel to the ground plane.

公开(公告)号：US09773862B2

公开(公告)日：2017-09-26

申请号：US15375137

申请日：2016-12-11

Applicant: QUALCOMM Incorporated

Inventor： Changhan Hobie Yun ,  Daeik Daniel Kim ,  Chengjie Zuo ,  Jonghae Kim ,  Mario Francisco Velez ,  Donald William Kidwell, Jr. ,  Jon Bradley Lasiter ,  Kwan-Yu Lai ,  Jitae Kim ,  Ravindra Vaman Shenoy

IPC: H01L21/4763 ,  H01L49/02 ,  H01L27/08 ,  H01L23/48 ,  H01L21/28 ,  H01L21/768

CPC classification number: H01L28/90 ,  H01G4/012 ,  H01G4/33 ,  H01L21/28282 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5223 ,  H01L27/0805 ,  H01L27/12 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are space-efficient capacitors that have a higher quality factor than conventional designs and improve coupling of electrical energy from a through-glass via (TGV) to a dielectric. For example, provided is a TGV having a non-rectangular cross-section, where one end of the TGV is coupled to a first metal plate. A dielectric material is formed on the first metal plate. A second metal plate is formed on the dielectric material in a manner that overlaps at least a portion of the first metal plate to form at least one overlapped region of the dielectric material. At least a part of the perimeter of the overlapped region is non-planar. The overlapped region can be formed in a shape of a closed ring, in a plurality of portions of a ring shape, in substantially a quarter of a ring shape, and/or in substantially a half of a ring shape.

公开(公告)号：US09660110B2

公开(公告)日：2017-05-23

申请号：US14498359

申请日：2014-09-26

Applicant: QUALCOMM Incorporated

Inventor： Daeik Daniel Kim ,  Jonghae Kim ,  Chengjie Zuo ,  Sang-June Park ,  Changhan Hobie Yun ,  Mario Francisco Velez ,  David Francis Berdy ,  Matthew Michael Nowak ,  Robert Paul Mikulka

IPC: H01L29/93 ,  H01L29/94 ,  H01L27/06

CPC classification number: H01L29/93 ,  H01L27/0629 ,  H01L29/94

Abstract: An apparatus includes a varactor having a first contact that is located on a first side of a substrate. The varactor includes a second contact that is located on a second side of the substrate, and the second side is opposite the first side. The apparatus further includes a signal path between the first contact and the second contact.

公开(公告)号：US20170141756A1

公开(公告)日：2017-05-18

申请号：US15137662

申请日：2016-04-25

Applicant: QUALCOMM Incorporated

Inventor： Changhan Hobie Yun ,  Chengjie Zuo ,  Daeik Daniel Kim ,  Mario Francisco Velez ,  Niranjan Sunil Mudakatte ,  Je-Hsiung Jeffrey Lan ,  David Francis Berdy ,  Yunfei Ma ,  Robert Paul Mikulka ,  Jonghae Kim

IPC: H03H9/54 ,  H03H3/02 ,  H03H3/08 ,  H03H9/64

CPC classification number: H03H9/542 ,  H01F17/0013 ,  H01F2017/002 ,  H01F2017/0026 ,  H03H3/02 ,  H03H3/08 ,  H03H7/0123 ,  H03H7/461 ,  H03H9/0547 ,  H03H9/0557 ,  H03H9/0561 ,  H03H9/1014 ,  H03H9/1071 ,  H03H9/64 ,  H05K1/0306 ,  H05K1/185 ,  H05K3/0014 ,  H05K3/4602

Abstract: A device includes an acoustic resonator embedded within an encapsulating structure that at least partially encapsulates the acoustic resonator. The device includes an inductor electrically connected to the acoustic resonator. At least a portion of the inductor is embedded in the encapsulating structure.