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公开(公告)号:US09929024B2
公开(公告)日:2018-03-27
申请号:US15173037
申请日:2016-06-03
Applicant: RF Micro Devices, Inc.
Inventor: Thomas Scott Morris , David Jandzinski , Stephen Parker , Jon Chadwick , Julio C. Costa
IPC: H01L23/29 , H01L21/56 , H01L25/065 , H01L23/31 , H01L23/373 , H01L23/433 , H01L23/00
Abstract: The present disclosure relates to enhancing the thermal performance of encapsulated flip chip dies. According to an exemplary process, a plurality of flip chip dies are attached on a top surface of a carrier, and a first mold compound is applied over the top surface of the carrier to encapsulate the plurality of flip chip dies. The first mold compound is thinned down to expose a substrate of each flip chip die and the substrate of each flip chip die is then substantially etched away to provide an etched flip chip die that has an exposed surface at the bottom of a cavity. Next, a second mold compound with high thermal conductivity is applied to substantially fill each cavity and the top surface of the second mold compound is planarized. Finally, the encapsulated etched flip chip dies can be marked, singulated, and tested as a module.
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公开(公告)号:US09900204B2
公开(公告)日:2018-02-20
申请号:US13773888
申请日:2013-02-22
Applicant: RF Micro Devices, Inc.
Inventor: Chris Levesque , Christopher Truong Ngo
CPC classification number: H04L27/367 , H03F1/0227 , H03F1/0261 , H03F1/0277 , H03F3/195 , H03F3/211 , H03F3/245 , H03F3/602 , H03F3/72 , H03F2200/171 , H03F2200/222 , H03F2200/27 , H03F2200/318 , H03F2200/336 , H03F2200/387 , H03F2200/411 , H03F2200/414 , H03F2200/417 , H03F2200/451 , H03F2200/504 , H03F2200/534 , H03F2200/537 , H03F2200/541 , H03F2203/21106 , H03F2203/21142 , H03F2203/21157
Abstract: A multiple functional equivalence digital communications interface and a group of functional circuits are disclosed. The multiple functional equivalence digital communications interface presents a functional equivalence of each of a group of digital communications interfaces to a digital communications bus. Each functional equivalence of the group of digital communications interfaces is associated with a corresponding one of the group of functional circuits.
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公开(公告)号:US09899986B2
公开(公告)日:2018-02-20
申请号:US14547502
申请日:2014-11-19
Applicant: RF Micro Devices, Inc.
Inventor: Nadim Khlat , Marcus Granger-Jones
CPC classification number: H03H7/463 , H03H7/48 , H04B1/0057 , H04B1/40 , H04B1/50 , H04B10/556 , H04L5/08 , H04L27/2085
Abstract: Embodiments of a tunable radio frequency (RF) diplexer and methods of operating the same are disclosed. In one embodiment, the RF diplexer includes a first hybrid coupler, a second hybrid coupler, an RF filter circuit, and a phase inversion component. Both the RF filter circuit and the phase inversion component are connected between the first hybrid coupler and the second hybrid coupler. The phase inversion component is configured to provide approximately a differential phase. The RF filter circuit is configured to provide a passband and a notch. The RF filter circuit is tunable to provide the notch on both a high-frequency side of the passband and a low frequency side of the passband. Accordingly, the tunable RF diplexer provides lower insertion losses and higher isolation regardless of whether the one of the diplexed frequency bands is set at higher frequencies or lower frequencies than the other diplexed frequency band.
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公开(公告)号:US09899289B2
公开(公告)日:2018-02-20
申请号:US14885202
申请日:2015-10-16
Applicant: RF Micro Devices, Inc.
Inventor: Dirk Robert Walter Leipold , Julio C. Costa , Baker Scott , George Maxim
IPC: H01L23/29 , H01L23/31 , H01L21/304 , H01L21/02 , H01L21/683 , H01L23/373 , H01L23/00 , H05K1/02 , H05K1/18 , H01Q1/50 , H01L23/36 , H01L21/56 , H01L23/20 , H01L23/367 , H01L21/306 , H01L23/522 , H01L49/02
CPC classification number: H01L23/315 , H01L21/02266 , H01L21/02282 , H01L21/304 , H01L21/30604 , H01L21/565 , H01L21/6835 , H01L23/20 , H01L23/291 , H01L23/293 , H01L23/3121 , H01L23/3135 , H01L23/36 , H01L23/367 , H01L23/3731 , H01L23/3737 , H01L23/5223 , H01L23/5227 , H01L23/5228 , H01L23/562 , H01L24/17 , H01L28/10 , H01L28/20 , H01L28/40 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/131 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2224/92125 , H01L2924/0002 , H01L2924/19011 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01Q1/50 , H05K1/0203 , H05K1/181 , H01L2924/00 , H01L2924/014 , H01L2924/00014
Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 106 Ohm-cm.
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公开(公告)号:US09892937B2
公开(公告)日:2018-02-13
申请号:US15173037
申请日:2016-06-03
Applicant: RF Micro Devices, Inc.
Inventor: Thomas Scott Morris , David Jandzinski , Stephen Parker , Jon Chadwick , Julio C. Costa
IPC: H01L23/29 , H01L21/56 , H01L25/065 , H01L23/31 , H01L23/373 , H01L23/433 , H01L23/00
Abstract: The present disclosure relates to enhancing the thermal performance of encapsulated flip chip dies. According to an exemplary process, a plurality of flip chip dies are attached on a top surface of a carrier, and a first mold compound is applied over the top surface of the carrier to encapsulate the plurality of flip chip dies. The first mold compound is thinned down to expose a substrate of each flip chip die and the substrate of each flip chip die is then substantially etched away to provide an etched flip chip die that has an exposed surface at the bottom of a cavity. Next, a second mold compound with high thermal conductivity is applied to substantially fill each cavity and the top surface of the second mold compound is planarized. Finally, the encapsulated etched flip chip dies can be marked, singulated, and tested as a module.
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166.
公开(公告)号:US09837984B2
公开(公告)日:2017-12-05
申请号:US15004084
申请日:2016-01-22
Applicant: RF Micro Devices, Inc.
Inventor: Nadim Khlat , Andrew F. Folkmann , Robert Aigner , Marcus Granger-Jones
CPC classification number: H03H9/542 , H03H9/605 , H03H9/6483 , H03H9/6489
Abstract: An RF ladder filter having a parallel capacitance compensation circuit is disclosed. The parallel capacitance compensation circuit is made up of a first inductive element with a first T-terminal and a first end coupled to a first ladder terminal and a second inductive element with a second T-terminal that is coupled to the first T-terminal of the first inductive element and a second end coupled to a second ladder terminal. Further included is a compensating acoustic RF resonator (ARFR) having a fixed node terminal and a third T-terminal that is coupled to the first T-terminal of the first inductive element and the second T-terminal of the second inductive element, and a finite number of series-coupled ladder ARFRs, wherein the parallel capacitance compensation circuit is coupled across one of the finite number of series-coupled ARFRs by way of the first ladder terminal and the second ladder terminal.
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公开(公告)号:US09813036B2
公开(公告)日:2017-11-07
申请号:US13714600
申请日:2012-12-14
Applicant: RF Micro Devices, Inc.
Inventor: Andrew F. Folkmann , Ramon Antonio Beltran Lizarraga
CPC classification number: H03G3/20 , H03F1/0288 , H03F3/189 , H03F3/68 , H03F3/72 , H03G3/3042
Abstract: Radio frequency (RF) amplification devices and methods of amplifying RF signals are disclosed. In one embodiment, an RF amplification device includes a control circuit and a Doherty amplifier configured to amplify an RF signal. The Doherty amplifier includes a main RF amplification circuit and a peaking RF amplification circuit. The control circuit is configured to activate the peaking RF amplification circuit in response to the RF signal reaching a threshold level. In this manner, the activation of the peaking RF amplification circuit can be precisely controlled.
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公开(公告)号:US09799444B2
公开(公告)日:2017-10-24
申请号:US14840216
申请日:2015-08-31
Applicant: RF Micro Devices, Inc.
Inventor: Marcus Granger-Jones , John Robert Siomkos , Jeppe Korshøj Bendixen , John Avery Capwell , Jayanti Jaganatha Rao
CPC classification number: H01F38/14 , H01F21/12 , H01F2038/146 , H03H7/465 , H03H7/48
Abstract: This disclosure relates generally to directional couplers. In one embodiment, a directional coupler includes a first port, a second port, a third port, a first inductive element, a second inductive element, a first switchable path, and a second switchable path. The first inductive element is coupled between the first port and the second port, while the second inductive element is mutually coupled to the first inductive element. The first switchable path is configured to be opened and closed, wherein the first switchable path is coupled between a first location of the second inductive element and the third port. The second switchable path is configured to be opened and closed, wherein the second switchable path is coupled between a second location of the second inductive element and the third port. In this manner, a directivity of the directional coupler can be switched between a forward direction and a reverse direction.
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公开(公告)号:US09780866B2
公开(公告)日:2017-10-03
申请号:US14824937
申请日:2015-08-12
Applicant: RF Micro Devices, Inc.
Inventor: Nadim Khlat
CPC classification number: H04B7/24 , H03H7/40 , H03H7/465 , H03H11/30 , H03H11/344
Abstract: A configurable RF transmit/receive (TX/RX) multiplexer, which includes a group of RF TX bandpass filters, a group of RF TX switching elements, and a group of RF RX bandpass filters; is disclosed. Each of the group of RF RX bandpass filters is coupled to a first common connection node. Each of the group of RF TX switching elements is coupled between a corresponding one of the group of RF TX bandpass filters and the first common connection node, which is coupled to a first RF antenna.
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公开(公告)号:US09780756B2
公开(公告)日:2017-10-03
申请号:US14449764
申请日:2014-08-01
Applicant: RF Micro Devices, Inc.
Inventor: George Maxim , Dirk Robert Walter Leipold , Baker Scott
CPC classification number: H03H7/0161 , H03F1/565 , H03F3/193 , H03F3/245 , H03F3/68 , H03F3/72 , H03F2200/111 , H03F2200/267 , H03F2200/391 , H03F2200/451 , H03F2203/7209 , H03H7/0153 , H03H7/09 , H03H7/1775 , H03H2210/012 , H03H2210/025 , H03H2210/04 , H03J5/242
Abstract: Embodiments of radio frequency (RF) front-end circuitry are disclosed where the RF front-end circuitry includes a tunable RF filter structure and a calibration circuit. The tunable RF filter structure includes (at least) a pair of weakly coupled resonators and defines a transfer function with a passband. The calibration circuit is configured to shape the passband so that the passband defines a center frequency. Additionally, the calibration circuit is configured to detect a phase difference at the target center frequency between the pair of weakly coupled resonators and adjust the phase difference of the pair of weakly coupled resonators at the target center frequency so as to reduce a frequency displacement between the center frequency of the passband and the target center frequency. In this manner, the calibration circuit calibrates the tunable RF filter structure to correct for errors in the center frequency of the passband due to component manufacturing variations.
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