公开(公告)号：US09761367B2

公开(公告)日：2017-09-12

申请号：US14927546

申请日：2015-10-30

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Baker Scott

IPC: H03H7/46 ,  H01F27/28 ,  H03H7/38 ,  H04B1/40 ,  H04J1/08

CPC classification number: H01F27/2804 ,  H01F2027/2809 ,  H03H7/38 ,  H03H7/463 ,  H04B1/40 ,  H04J1/08

Abstract: Multiplexing circuitry is disclosed that includes filtering circuitry, which provides a first transfer function between a common port and a first port and a second transfer function between the common port and a second port. The first transfer function and second transfer function provide a first passband and a second passband, respectively. The first transfer function also has a stopband provided within the second passband of the second transfer function due to the filtering circuitry including a first parallel resonant circuit provided in series in a first filter path being weakly coupled to a second parallel resonant provided in shunt with respect to a second filter path. The weak coupling between the first parallel resonant circuit and the second parallel resonant circuit thus naturally provides a stopband in the first transfer function within the second passband of the second transfer function.

公开(公告)号：US09755671B2

公开(公告)日：2017-09-05

申请号：US14450028

申请日：2014-08-01

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03F3/24 ,  H03F3/19 ,  H04B1/16 ,  H04B1/04 ,  H03F1/56 ,  H03F3/193 ,  H03F3/68 ,  H03F3/72 ,  H03H7/09 ,  H03H7/01

CPC classification number: H04B1/0458 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/09 ,  H03H7/1775 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04

Abstract: Embodiments of radio frequency (RF) filter front-end circuitry are disclosed that include a tunable RF filter structure having weakly coupled resonators and a Voltage Standing Wave Ratio (VSWR) control circuit. The VSWR control circuit is configured to detect a VSWR at a terminal of the tunable RF filter structure and to dynamically tune the tunable RF filter structure based on the VSWR. In this manner, the VSWR control circuit tunes the tunable RF filter structure to improve performance of tunable RF filter structure over variations in the VSWR.

公开(公告)号：US09741632B2

公开(公告)日：2017-08-22

申请号：US14851652

申请日：2015-09-11

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott

IPC: H01L23/31 ,  H01L23/29 ,  H01L23/367 ,  H01L23/373 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/683 ,  H01L21/02 ,  H01L21/56 ,  H01L21/762

Abstract: A printed circuit module and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and a buried oxide (BOX) layer over the at least one device layer. A polymer layer is disposed over the BOX layer, wherein the polymer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 103 Ohm-cm.

公开(公告)号：US20170214418A1

公开(公告)日：2017-07-27

申请号：US15094250

申请日：2016-04-08

Applicant: RF Micro Devices, Inc.

Inventor： Ashraf Rozek ,  Jason Yorks

IPC: H04B1/04 ,  H04L5/14

CPC classification number: H03F1/025 ,  G05F3/02 ,  H03F1/02 ,  H03F1/0277 ,  H03F3/189 ,  H03F3/193 ,  H03F3/24 ,  H03F2200/507 ,  H03G1/04 ,  H03H21/002 ,  H04L5/1461

Abstract: Circuitry, which includes a PA power supply and RF PA circuitry, is disclosed. The RF PA circuitry includes a group of RF PAs and a group of PA decoupling circuits. The group of RF PAs includes a first RF PA and a second RF PA. The group of PA decoupling circuits includes a first PA decoupling circuit and a second PA decoupling circuit. The PA power supply provides a first PA power supply output signal to at least one of the group of RF PAs and to at least one of the group of PA decoupling circuits. The first PA decoupling circuit is coupled across the first RF PA, is programmable, and at least partially decouples the first RF PA from other circuitry. The second PA decoupling circuit is coupled across the second RF PA and at least partially decouples the second RF PA from other circuitry.

公开(公告)号：US20170214382A1

公开(公告)日：2017-07-27

申请号：US15087320

申请日：2016-03-31

Applicant: RF Micro Devices, Inc.

Inventor： Kushal Bhattacharjee

IPC: H03H9/02 ,  H03H9/05 ,  H03H9/13

CPC classification number: H03H9/02228 ,  H03H3/0072 ,  H03H3/0077 ,  H03H3/02 ,  H03H3/08 ,  H03H9/0009 ,  H03H9/02244 ,  H03H9/02259 ,  H03H9/02275 ,  H03H9/02338 ,  H03H9/02787 ,  H03H9/0296 ,  H03H9/0538 ,  H03H9/13 ,  H03H9/131 ,  H03H9/145 ,  H03H9/14564 ,  H03H9/15 ,  H03H9/17 ,  H03H9/25 ,  H03H2003/027 ,  H03H2009/02165 ,  H03H2009/02496 ,  H03H2009/155

Abstract: A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.

公开(公告)号：US09653772B2

公开(公告)日：2017-05-16

申请号：US14931621

申请日：2015-11-03

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H01L27/08 ,  H01P7/06 ,  H01L21/027 ,  H01L49/02 ,  H03H9/24 ,  H01P7/08

CPC classification number: H01F27/2804 ,  H01F2027/2809 ,  H01L21/0276 ,  H01L28/10 ,  H01P7/06 ,  H01P7/065 ,  H01P7/08 ,  H03H7/38 ,  H03H7/463 ,  H03H9/24 ,  H04B1/40 ,  H04J1/08

Abstract: A resonator includes a laminate, an inductive element on the laminate, and a semiconductor die attached to the inductive element and the laminate. The semiconductor die includes a substrate and a device layout area. The device layout area is separated into a number of device layout sub-areas, each of which has an area between about 1.0 μm2 and 100.0 μm2. By limiting the area of each one of the device layout sub-areas with the charge carrier trap trenches, the total area of the semiconductor die prone to inducement of eddy currents (i.e., the layer of accumulated charge at the interface of the substrate and the device layout area) is reduced, which in turn reduces interference with the magnetic field of the inductive element and thus improves the performance of the resonator.

公开(公告)号：US09647641B2

公开(公告)日：2017-05-09

申请号：US14450199

申请日：2014-08-01

Applicant: RF Micro Devices, inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03J3/06 ,  H03H7/01 ,  H03H7/46 ,  H03F1/56 ,  H03F3/193 ,  H03F3/24 ,  H03F3/68 ,  H03F3/72 ,  H03H7/09 ,  H03J5/24 ,  H03H7/38

Abstract: RF communications circuitry, which includes a first tunable RF filter and a first RF low noise amplifier (LNA) is disclosed. The first tunable RF filter includes a pair of weakly coupled resonators, and receives and filters a first upstream RF signal to provide a first filtered RF signal. The first RF LNA is coupled to the first tunable RF filter, and receives and amplifies an RF input signal to provide an RF output signal.

公开(公告)号：US09614490B2

公开(公告)日：2017-04-04

申请号：US14298852

申请日：2014-06-06

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03H7/01 ,  H03H7/46 ,  H03F3/193 ,  H04B1/10 ,  H03F1/56 ,  H03F3/24 ,  H03F3/68 ,  H03F3/72 ,  H04B1/18 ,  H03H7/09

CPC classification number: H03H7/465 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/1775 ,  H03H7/46 ,  H03H7/463 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H04B1/1027 ,  H04B1/18

Abstract: RF communications circuitry, which includes a first RF filter structure and control circuitry, is disclosed. The first RF filter structure includes a pair of weakly coupled resonators and a first tunable RF filter. The control circuitry provides a first filter control signal. The first tunable RF filter receives and filters an upstream RF signal to provide a first filtered RF signal, such that a center frequency of the first tunable RF filter is based on the first filter control signal.

公开(公告)号：US09614476B2

公开(公告)日：2017-04-04

申请号：US14789464

申请日：2015-07-01

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat

IPC: H03G3/20 ,  H03F3/04 ,  H03F1/02 ,  H03F3/24

CPC classification number: H03F1/0222 ,  H03F1/0233 ,  H03F3/245 ,  H03F2200/102 ,  H03F2200/129 ,  H03F2200/451 ,  H03F2200/504

Abstract: An RF communications system, which includes an RF power amplifier, an envelope tracking power supply, and supply control circuitry, is disclosed. The RF communications system operates in one of a normal operation mode and a calibration mode. During the calibration mode, the RF power amplifier receives and amplifies an RF input signal to provide an RF transmit signal using an envelope power supply signal, which is provided by the envelope tracking power supply. Further, the supply control circuitry controls the envelope tracking power supply to cause a sharp transition of the envelope power supply signal when a setpoint of the envelope power supply signal transitions through a setpoint threshold of the envelope power supply signal.

公开(公告)号：US09571056B2

公开(公告)日：2017-02-14

申请号：US14554746

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： Baker Scott ,  George Maxim ,  Dirk Robert Walter Leipold

IPC: H03G3/30 ,  H03F1/52 ,  H03F1/02 ,  H03F3/19 ,  H04B1/04 ,  H03F1/32 ,  H03F3/68 ,  H03F1/22 ,  H03F1/56 ,  H03F3/45 ,  H03F3/193

CPC classification number: H03G3/3036 ,  H03F1/0211 ,  H03F1/0272 ,  H03F1/223 ,  H03F1/32 ,  H03F1/523 ,  H03F1/565 ,  H03F3/19 ,  H03F3/193 ,  H03F3/24 ,  H03F3/45179 ,  H03F3/45394 ,  H03F3/68 ,  H03F2200/324 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/471 ,  H03F2201/3236 ,  H03G3/3042 ,  H04B1/0475 ,  H04B2001/0408 ,  H04B2001/0416 ,  H04B2001/0425

Abstract: RF PA circuitry includes an amplifier stage, gain compensation circuitry, and an adder. The amplifier stage is configured to receive and amplify an RF input signal to provide an RF output signal. The gain compensation circuitry is coupled in parallel with the amplifier stage and configured to receive the RF input signal and provide a gain compensation signal, wherein the gain compensation signal is configured to linearize at least a portion of the gain response of the amplifier stage or the RF PA circuitry in general. The adder is coupled between an output of the amplifier stage and the gain compensation stage and is configured to receive and add the RF output signal and the gain compensation signal to provide a linearized RF output signal.

Abstract translation: RF PA电路包括放大器级，增益补偿电路和加法器。 放大器级被配置为接收和放大RF输入信号以提供RF输出信号。 所述增益补偿电路与所述放大器级并联并且被配置为接收所述RF输入信号并提供增益补偿信号，其中所述增益补偿信号被配置为线性化放大器级的增益响应的至少一部分或 RF PA电路一般。 加法器耦合在放大器级的输出端和增益补偿级之间，并且被配置为接收和添加RF输出信号和增益补偿信号以提供线性化的RF输出信号。