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    Methods of imprint patterning of irregular surface
    13.
    发明授权
    Methods of imprint patterning of irregular surface 有权
    不规则表面刻印图案的方法

    公开(公告)号：US09425346B2

    公开(公告)日：2016-08-23

    申请号：US14156521

    申请日：2014-01-16

    Applicant: 1366 Technologies, Inc. ,  Massachusetts Institute of Technology

    Inventor： Benjamin F. Polito ,  Holly G. Gates ,  Emanuel M. Sachs

    IPC: H01L31/0236 ,  G03F7/00 ,  B29C59/02 ,  B29C43/36 ,  H01L31/18 ,  B29C43/02 ,  B29C43/22 ,  B82Y10/00 ,  B82Y40/00 ,  B29C43/46

    CPC classification number: H01L31/182 ,  B29C43/021 ,  B29C43/222 ,  B29C59/02 ,  B29C2043/025 ,  B29C2043/3634 ,  B29C2043/3652 ,  B29C2043/465 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L31/0236 ,  H01L31/02363 ,  Y02E10/50

    Abstract: Patterned substrates for photovoltaic and other uses are made by pressing a flexible stamp upon a thin layer of resist material, which covers a substrate, such as a wafer. The resist changes phase or becomes flowable, flowing away from locations of impression, revealing the substrate, which is subjected to some shaping process. A typical substrate is silicon, and a typical resist is a wax. Workpiece textures include extended grooves, discrete, spaced apart pits, and combinations and intermediates thereof. Platen or rotary patterning apparatus may be used. Rough and irregular workpiece substrates may be accommodated by extended stamp elements. Resist may be applied first to the workpiece, the stamp, or substantially simultaneously, in discrete locations, or over the entire surface of either. The resist dewets the substrate completely where desired.

    Abstract translation: 用于光伏和其他用途的图案化基板是通过将柔性印模压在覆盖诸如晶片的基底的抗蚀剂材料薄层上而制成的。 抗蚀剂改变相位或变得可流动，从印模的位置流出，露出经受一些成形过程的基底。 典型的基底是硅，典型的抗蚀剂是蜡。 工件纹理包括延伸凹槽，离散的，间隔开的凹坑，以及它们的组合和中间体。 可以使用压板或旋转图案形成装置。 粗糙和不规则的工件衬底可以由延长的印模元件容纳。 抗蚀剂可以首先施加到工件，印模或基本上同时地在离散的位置，或者在两者的整个表面上。 抗蚀剂在需要时完全将基材脱模。

    TECHNIQUES FOR IMPROVED IMPRINTING OF SOFT MATERIAL ON SUBSTRATE USING STAMP INCLUDING UNDERFILLING TO LEAVE A GAP AND PULSING STAMP
    14.
    发明申请
    TECHNIQUES FOR IMPROVED IMPRINTING OF SOFT MATERIAL ON SUBSTRATE USING STAMP INCLUDING UNDERFILLING TO LEAVE A GAP AND PULSING STAMP 审中-公开
    用于改善对基材上的软质材料进行加固的技术，其中包括打破缺口和冲压印花

    公开(公告)号：US20150037922A1

    公开(公告)日：2015-02-05

    申请号：US14345675

    申请日：2012-09-22

    Applicant: 1366 TECHNOLOGIES, INC.

    Inventor： Emanuel M. Sachs

    IPC: H01L31/18

    CPC classification number: H01L31/18 ,  B29C33/40 ,  B29C33/42 ,  B29C33/424 ,  B29C43/021 ,  B29C2033/426 ,  B29C2043/025 ,  B29C2059/023 ,  B81C99/0085 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    Abstract: A method for imparting a pattern to a flowable resist material on a substrate entails providing a resist layer so thin that during a stamp wedging process, the resist never completely fills the space between the substrate and the bottom surface of a stamp between wedge protrusions, leaving gap everywhere therebetween. A gap remains between the resist and the extended surface of the stamp. If the resist layer as deposited is somewhat thicker than the targeted amount, it will simply result in a smaller gap between resist and tool. The presence of a continuous gap assures that no pressure builds under the stamp. Thus, the force on the protrusions i determined only by the pressure above the stamp and is well controlled, resulting in well-controlled hole sizes. The gap prevents resist from being pumped entirely out of any one region, and thus prevents any regions from being uncovered of resist. The stamp can be pulsed in its contact with the substrate, repeatedly deforming the indenting protrusions. Several pulses clears away any scum layer better than does a single press, as measured by an etch test comparison of the degree to which a normal etch for a normal duration etches away substrate material. A method for imparting a pattern to a flowable resist material on a substrate entails providing a resist layer so thin that during a stamp wedging process, the resist never completely fills the space between the substrate and the bottom surface of a stamp between wedge protrusions, leaving a gap everywhere therebetween. A gap remains between the resist and the extended surface of the stamp.

    Abstract translation: 将图案赋予基板上的可流动抗蚀剂材料的方法需要提供如此薄的抗蚀剂层，使得在印模楔入过程中，抗蚀剂不会完全填充基板与楔形凸起之间的印模的底表面之间的空间，留下 差距在其间。 在抗蚀剂和印模的延伸表面之间留有间隙。 如果沉积的抗蚀剂层比目标量稍厚一些，则将简单地导致抗蚀剂和工具之间的较小的间隙。 连续间隙的存在确保印章下没有压力。 因此，突起上的力i仅由压力上方的压力确定并且被良好地控制，导致良好控制的孔尺寸。 间隙防止抗蚀剂完全从任何一个区域泵出，从而防止任何区域不被抗蚀剂覆盖。 印模可以与基板接触地脉动，使压痕突起重复变形。 几个脉冲比单次压机更好地清除任何浮渣层，如通过蚀刻测试比较正常蚀刻对正常时间蚀刻掉的衬底材料的程度所测量的。 将图案赋予基板上的可流动抗蚀剂材料的方法需要提供如此薄的抗蚀剂层，使得在印模楔入过程中，抗蚀剂不会完全填充基板与楔形凸起之间的印模的底表面之间的空间，留下 在它们之间的差距。 在抗蚀剂和印模的延伸表面之间留有间隙。

    SEMI-CONDUCTOR WAFERS LONGER THAN INDUSTRY STANDARD SQUARE
    17.
    发明申请
    SEMI-CONDUCTOR WAFERS LONGER THAN INDUSTRY STANDARD SQUARE 审中-公开

    公开(公告)号：US20200251355A1

    公开(公告)日：2020-08-06

    申请号：US16757497

    申请日：2018-10-23

    Applicant: 1366 TECHNOLOGIES, INC.

    Inventor： Robertus Antonius STEEMAN

    IPC: H01L21/673 ,  H01L21/677 ,  H01L31/0352 ,  H01L31/18 ,  B65G47/90

    Abstract: A semiconductor wafer is as wide as the industry standard width A (presently 156 mm+/−1 mm) and is longer than the industry standard A by at least 1 mm and as much as the standard equipment can reasonably accommodate, presently approximately 3-20 mm and potentially longer, thus, gaining significant additional surface area for sunlight absorption. Modules may be composed of a plurality of such larger wafers. Such wafers can be processed in conventional processing equipment that has a wafer retaining portion of industry standard size A and a configuration that also accommodates a wafer with a perpendicular second edge longer than A by at least 1 and typically 3-20 mm. Wet bench carriers and transport and inspection stations can be so used.

    METHODS AND APPARATI FOR MAKING THIN SEMI-CONDUCTOR WAFERS WITH LOCALLY CONTROLLED REGIONS THAT ARE RELATIVELY THICKER THAN OTHER REGIONS AND SUCH WAFERS
    20.
    发明申请
    METHODS AND APPARATI FOR MAKING THIN SEMI-CONDUCTOR WAFERS WITH LOCALLY CONTROLLED REGIONS THAT ARE RELATIVELY THICKER THAN OTHER REGIONS AND SUCH WAFERS 审中-公开
    用于制造具有相对于其他区域和其他区域的相对厚度的局部控制区域的薄半导体波导的方法和装置

    公开(公告)号：US20170051429A1

    公开(公告)日：2017-02-23

    申请号：US15306787

    申请日：2015-04-17

    Applicant: 1366 TECHNOLOGIES, INC.

    Inventor： EMANUEL M. SACHS ,  RALF JONCZYK ,  ADAM L. LORENZ ,  RICHARD L. WALLACE ,  G.D. STEPHEN HUDELSON

    IPC: C30B11/02 ,  C30B29/06 ,  H01L29/06

    CPC classification number: C30B11/02 ,  C30B29/06 ,  H01L29/0657 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Semi-conductor wafers with thin and thicker regions at controlled locations may be for Photovoltaics. The interior may be less than 180 microns or thinner, to 50 microns, with a thicker portion, at 180-250 microns. Thin wafers have higher efficiency. A thicker perimeter provides handling strength. Thicker stripes, landings and islands are for metallization coupling. Wafers may be made directly from a melt upon a template with regions of different heat extraction propensity arranged to correspond to locations of relative thicknesses. Interstitial oxygen is less than 6×1017 atoms/cc, preferably less than 2×1017, total oxygen less than 8.75×1017 atoms/cc, preferably less than 5.25×1017. Thicker regions form adjacent template regions having relatively higher heat extraction propensity; thinner regions adjacent regions with lesser extraction propensity. Thicker template regions have higher extraction propensity. Functional materials upon the template also have differing extraction propensities.

    Abstract translation: 半导体晶片在受控位置具有较薄和较厚的区域可能适用于光伏发电。 内部可以小于180微米或更薄，至50微米，较厚部分为180-250微米。 薄晶圆具有更高的效率。 较厚的周长提供处理强度。 较厚的条纹，着陆和岛屿用于金属化耦合。 晶片可以直接从熔体制成模板，其中不同热提取倾向的区域布置成对应于相对厚度的位置。 间隙氧小于6×1017原子/ cc，优选小于2×1017，总氧低于8.75×1017原子/ cc，优选小于5.25×1017。 更厚的区域形成具有相对更高的热提取倾向的相邻模板区域; 较薄的区域具有较小的提取倾向。 较厚的模板区域具有较高的提取倾向。 模板上的功能材料也具有不同的提取倾向。

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