公开(公告)号：US20060251800A1

公开(公告)日：2006-11-09

申请号：US11385344

申请日：2006-03-20

Applicant: Timothy Weidman ,  Kapila Wijekoon ,  Zhize Zhu ,  Avgerinos Gelatos ,  Amit Khandelwal ,  Arulkumar Shanmugasundram ,  Michael Yang ,  Fang Mei ,  Farhad Moghadam

Inventor： Timothy Weidman ,  Kapila Wijekoon ,  Zhize Zhu ,  Avgerinos Gelatos ,  Amit Khandelwal ,  Arulkumar Shanmugasundram ,  Michael Yang ,  Fang Mei ,  Farhad Moghadam

IPC: B05D5/12

CPC classification number: C23C18/1678 ,  B82Y30/00 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C18/1608 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/31 ,  C23C18/32 ,  C23C18/34 ,  C23C18/38 ,  C23C18/40 ,  C23C18/48 ,  C25D5/34 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and/or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and/or ALD deposition process. In one embodiment, a portion of the barrier layer is purposely allowed to react with traces of residual oxide at the silicon junction of the contact level feature to form a low resistance connection.

公开(公告)号：US20120214303A1

公开(公告)日：2012-08-23

申请号：US13456904

申请日：2012-04-26

Applicant: SESHADRI GANGULI ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

Inventor： SESHADRI GANGULI ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

IPC: H01L21/3205

CPC classification number: C23C16/18 ,  C23C16/42 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

Abstract: Embodiments of the invention generally provide methods for forming cobalt silicide. In one embodiment, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.

Abstract translation: 本发明的实施方案通常提供形成硅化钴的方法。 在一个实施例中，用于形成钴硅化物材料的方法包括在第一步骤期间将具有含硅材料的衬底暴露于湿蚀刻溶液或预清洁等离子体中，然后在第二步骤期间暴露于氢等离子体 预清洁过程。 该方法还包括通过CVD工艺在含硅材料上沉积钴金属层，加热衬底以在第一退火期间在钴金属层和含硅材料的界面处形成包含CoSi的第一钴硅化物层 在蚀刻过程中从衬底去除任何未反应的钴金属，以及在第二退火过程中加热衬底以形成包含CoSi 2的第二钴硅化物层。

公开(公告)号：US08211799B2

公开(公告)日：2012-07-03

申请号：US13160378

申请日：2011-06-14

Applicant: Amit Khandelwal ,  Madhu Moorthy ,  Avgerinos V. Gelatos ,  Kai Wu

Inventor： Amit Khandelwal ,  Madhu Moorthy ,  Avgerinos V. Gelatos ,  Kai Wu

IPC: H01L21/44

CPC classification number: C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: Embodiments of the invention provide a method for depositing tungsten-containing materials. In one embodiment, a method includes forming a tungsten nucleation layer over an underlayer disposed on the substrate while sequentially providing a tungsten precursor and a reducing gas into a process chamber during an atomic layer deposition (ALD) process and depositing a tungsten bulk layer over the tungsten nucleation layer, wherein the reducing gas contains hydrogen gas and a hydride compound (e.g., diborane) and has a hydrogen/hydride flow rate ratio of about 500:1 or greater. In some examples, the method includes flowing the hydrogen gas into the process chamber at a flow rate within a range from about 1 slm to about 20 slm and flowing a mixture of the hydride compound and a carrier gas into the process chamber at a flow rate within a range from about 50 sccm to about 500 sccm.

Abstract translation: 本发明的实施方案提供了一种沉积含钨材料的方法。 在一个实施例中，一种方法包括在设置在衬底上的底层上形成钨成核层，同时在原子层沉积（ALD）工艺期间依次提供钨前体和还原气体到处理室中，并在其上沉积钨体积层 钨成核层，其中所述还原气体包含氢气和氢化物化合物（例如乙硼烷），并且具有约500:1或更高的氢/氢化物流速比。 在一些实例中，该方法包括以约1slm至约20slm的流速将氢气流入处理室，并将氢化物化合物和载气的混合物以流速流动到处理室中 在约50sccm至约500sccm的范围内。

公开(公告)号：US08187970B2

公开(公告)日：2012-05-29

申请号：US12969445

申请日：2010-12-15

Applicant: Seshadri Ganguli ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

Inventor： Seshadri Ganguli ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

IPC: H01L21/4763 ,  H01L21/44

CPC classification number: C23C16/18 ,  C23C16/42 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

Abstract: Methods for forming cobalt silicide materials are disclosed herein. In one example, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The exemplary method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the first cobalt silicide layer during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.

Abstract translation: 本文公开了形成钴硅化物材料的方法。 在一个实例中，用于形成钴硅化物材料的方法包括在第一步骤期间将具有含硅材料的衬底暴露于湿蚀刻溶液或预清洁等离子体中，然后在第二步骤期间暴露于氢等离子体 预清洁过程。 所述示例性方法还包括通过CVD工艺在所述含硅材料上沉积钴金属层，加热所述衬底以在所述钴金属层与所述含硅材料的界面处的第一钴酸钴层中形成包含CoSi的第一钴硅化物层 退火工艺，在蚀刻过程期间从第一钴硅化物层去除任何未反应的钴金属，以及在第二退火工艺期间加热衬底以形成包含CoSi 2的第二钴硅化物层。

公开(公告)号：US20110086509A1

公开(公告)日：2011-04-14

申请号：US12969445

申请日：2010-12-15

Applicant: SESHADRI GANGULI ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

Inventor： SESHADRI GANGULI ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

IPC: H01L21/285

CPC classification number: C23C16/18 ,  C23C16/42 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

Abstract: Embodiments of the invention generally provide methods for forming cobalt silicide. In one embodiment, a method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.

Abstract translation: 本发明的实施方案通常提供形成硅化钴的方法。 在一个实施例中，用于形成钴硅化物材料的方法包括在第一步骤期间将具有含硅材料的衬底暴露于湿蚀刻溶液或预清洁等离子体中，然后在第二步骤期间暴露于氢等离子体 预清洁过程。 该方法还包括通过CVD工艺在含硅材料上沉积钴金属层，加热衬底以在第一退火期间在钴金属层和含硅材料的界面处形成包含CoSi的第一钴硅化物层 在蚀刻过程中从衬底去除任何未反应的钴金属，以及在第二退火过程中加热衬底以形成包含CoSi 2的第二钴硅化物层。

公开(公告)号：US07745333B2

公开(公告)日：2010-06-29

申请号：US12179002

申请日：2008-07-24

Applicant: Ken Kaung Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Avgerinos V. Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael X. Yang ,  Hua Chung ,  Jeong Soo Byun

Inventor： Ken Kaung Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Avgerinos V. Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael X. Yang ,  Hua Chung ,  Jeong Soo Byun

IPC: H01L21/44

CPC classification number: H01L21/28562 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.

Abstract translation: 在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段 以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。 该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。 在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核 层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

公开(公告)号：US07691442B2

公开(公告)日：2010-04-06

申请号：US12197049

申请日：2008-08-22

Applicant: Srinivas Gandikota ,  Madhu Moorthy ,  Amit Khandelwal ,  Avgerinos V. Gelatos ,  Mei Chang ,  Kavita Shah ,  Seshadri Ganguli

Inventor： Srinivas Gandikota ,  Madhu Moorthy ,  Amit Khandelwal ,  Avgerinos V. Gelatos ,  Mei Chang ,  Kavita Shah ,  Seshadri Ganguli

IPC: B32B15/00 ,  B32B15/01 ,  C23C16/06

CPC classification number: H01L21/28556 ,  C23C16/0281 ,  C23C16/06 ,  C23C16/45525 ,  C23C16/45529 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877 ,  Y10T428/12771 ,  Y10T428/12812 ,  Y10T428/12861 ,  Y10T428/12875

Abstract: Embodiments of the invention provide a method for depositing materials on substrates. In one embodiment, the method includes depositing a barrier layer containing tantalum or titanium on a substrate, depositing a ruthenium layer or a cobalt layer on the barrier layer, and depositing a tungsten bulk layer thereover. In some examples, the barrier layer may contain tantalum nitride deposited by an atomic layer deposition (ALD) process, the tungsten bulk layer may be deposited by a chemical vapor deposition (CVD) process, and the ruthenium or cobalt layer may be deposited by an ALD process. The ruthenium or cobalt layer may be exposed to a soak compound, such as hydrogen, diborane, silane, or disilane, during a soak process prior to depositing the tungsten bulk layer. In some examples, a tungsten nucleation layer may be deposited on the ruthenium or cobalt layer, such as by ALD, prior to depositing the tungsten bulk layer.

Abstract translation: 本发明的实施例提供了一种在衬底上沉积材料的方法。 在一个实施例中，该方法包括在衬底上沉积含有钽或钛的阻挡层，在阻挡层上沉积钌层或钴层，并在其上沉积钨体层。 在一些示例中，阻挡层可以包含通过原子层沉积（ALD）工艺沉积的氮化钽，可以通过化学气相沉积（CVD）工艺沉积钨体层，并且钌或钴层可以通过 ALD过程。 在沉积钨体层之前的浸泡过程中，钌或钴层可以暴露于浸泡化合物，例如氢，乙硼烷，硅烷或乙硅烷。 在一些实例中，在沉积钨体层之前，例如通过ALD，钨成核层可沉积在钌或钴层上。

公开(公告)号：US07521379B2

公开(公告)日：2009-04-21

申请号：US11869557

申请日：2007-10-09

Applicant: Amit Khandelwal ,  Avgerinos V. Gelatos ,  Christophe Marcadal ,  Mei Chang

Inventor： Amit Khandelwal ,  Avgerinos V. Gelatos ,  Christophe Marcadal ,  Mei Chang

IPC: H01L21/44 ,  H01L21/469

CPC classification number: H01L21/28556 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76862

Abstract: In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition (MOCVD) process, and thereafter, densifying the titanium nitride layer by exposing the substrate to a plasma process. In one example, the MOCVD process and the densifying plasma process is repeated to form a barrier stack by depositing a second titanium nitride layer on the first titanium nitride layer. In another example, a third titanium nitride layer is deposited on the second titanium nitride layer. Subsequently, the method provides depositing a conductive material on the substrate and exposing the substrate to a annealing process. In one example, each titanium nitride layer may have a thickness of about 15 Å and the titanium nitride barrier stack may have a copper diffusion potential of less than about 5×1010 atoms/cm2.

Abstract translation: 在一个实施例中，提供了一种在衬底上形成氮化钛阻挡材料的方法，其包括通过金属 - 有机化学气相沉积（MOCVD）工艺在衬底上沉积氮化钛层，然后通过以下步骤致密化氮化钛层： 将衬底暴露于等离子体工艺。 在一个实例中，通过在第一氮化钛层上沉积第二氮化钛层来重复MOCVD工艺和致密等离子体工艺以形成势垒堆叠。 在另一示例中，在第二氮化钛层上沉积第三氮化钛层。 随后，该方法提供在衬底上沉积导电材料并将衬底暴露于退火过程。 在一个示例中，每个氮化钛层可以具有约15埃的厚度，并且氮化钛阻挡层可以具有小于约5×10 10原子/ cm 2的铜扩散电位。

公开(公告)号：US20060009034A1

公开(公告)日：2006-01-12

申请号：US11038592

申请日：2005-01-19

Applicant: Ken Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Aygerinos Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael Yang ,  Hua Chung ,  Jeong Byun

Inventor： Ken Lai ,  Ravi Rajagopalan ,  Amit Khandelwal ,  Madhu Moorthy ,  Srinivas Gandikota ,  Joseph Castro ,  Aygerinos Gelatos ,  Cheryl Knepfler ,  Ping Jian ,  Hongbin Fang ,  Chao-Ming Huang ,  Ming Xi ,  Michael Yang ,  Hua Chung ,  Jeong Byun

IPC: H01L21/44

CPC classification number: H01L21/28562 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.

Abstract translation: 在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段 以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。 该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。 在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核 层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

公开(公告)号：US08551880B2

公开(公告)日：2013-10-08

申请号：US12262964

申请日：2008-10-31

Applicant: Bencherki Mebarki ,  Amit Khandelwal ,  Linh H. Thanh

Inventor： Bencherki Mebarki ,  Amit Khandelwal ,  Linh H. Thanh

IPC: H01L21/44

CPC classification number: H01L21/76814 ,  H01L21/02063 ,  H01L21/76826 ,  H01L21/76828

Abstract: A method for fabricating a semiconductor device is described. A substrate is provided having a patterned dielectric layer disposed thereon. A trench is formed in the dielectric layer. The surfaces of the trench are treated with an ammonia-based plasma process. A metal layer is then formed in the trench.

Abstract translation: 对半导体装置的制造方法进行说明。 提供了具有设置在其上的图案化电介质层的衬底。 在电介质层中形成沟槽。 用氨基等离子体处理处理沟槽的表面。 然后在沟槽中形成金属层。