公开(公告)号：US20190139932A1

公开(公告)日：2019-05-09

申请号：US16241947

申请日：2019-01-07

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Yan-Ting Lan ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L23/00 ,  H01L33/62 ,  H01L21/78 ,  H01L33/00 ,  H01L21/683 ,  H01L25/075

Abstract: A method of mass transferring electronic devices includes following steps. A wafer is provided. The wafer includes a substrate and a plurality of electronic devices. The electronic devices are arranged in a matrix on a surface of the substrate. The wafer is attached to a temporary fixing film. The wafer is cut so that the wafer is divided into a plurality of blocks. Each of the blocks includes at least a part of the electronic devices and a sub-substrate. The temporary fixing film is stretched so that the blocks on the temporary fixing film are separated from each other as the temporary fixing film is stretched. At least a part of the blocks is selected as a predetermined bonding portion, and each of the blocks in the predetermined bonding portion is transferred to a carrying substrate in sequence, so that the electronic devices in the predetermined bonding portion are bonded to the carrying substrate. The sub-substrates of the blocks are removed. Another method of mass transferring electronic devices is also provided.

公开(公告)号：US10147845B2

公开(公告)日：2018-12-04

申请号：US15627417

申请日：2017-06-19

Applicant: Genesis Photonics Inc.

Inventor： Chi-Feng Huang ,  Ching-Liang Lin ,  Shen-Jie Wang ,  Jyun-De Wu ,  Yu-Chu Li ,  Chun-Chieh Lee

IPC: H01L29/06 ,  H01L33/14 ,  H01L33/20 ,  H01L33/12 ,  H01L33/06 ,  H01L33/02 ,  H01L33/32 ,  H01L33/00

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1-xN (0

公开(公告)号：US10134950B2

公开(公告)日：2018-11-20

申请号：US15680227

申请日：2017-08-18

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Yan-Ting Lan ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L33/08 ,  H01L33/38 ,  H01L33/20 ,  H01L33/44 ,  H01L25/075 ,  H01L33/00 ,  H01L27/15 ,  H01L33/06

Abstract: A μLED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the μLED is also provided.

公开(公告)号：USRE47088E1

公开(公告)日：2018-10-16

申请号：US15721675

申请日：2017-09-29

Applicant: Genesis Photonics Inc.

Inventor： Yen-Lin Lai ,  Jyun-De Wu ,  Yu-Chu Li

IPC: H01L29/06 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32

Abstract: A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm−3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.

公开(公告)号：US20180261729A1

公开(公告)日：2018-09-13

申请号：US15975743

申请日：2018-05-09

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Chih-Ming Shen ,  Sheng-Tsung Hsu ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L33/46 ,  H01L33/50 ,  H01L33/44 ,  H01L33/10 ,  H01L33/62

CPC classification number: H01L33/46 ,  H01L33/10 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2933/0025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a barrier layer and a ductility layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The barrier layer is between the eutectic layer and the semiconductor epitaxial structure. The barrier layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The ductility layer is between the eutectic layer and the semiconductor epitaxial structure. The ductility layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.

公开(公告)号：US20180261727A1

公开(公告)日：2018-09-13

申请号：US15981855

申请日：2018-05-16

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Yan-Ting Lan ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Jing-En Huang ,  Teng-Hsien Lai ,  Hung-Chuan Mai ,  Kuan-Chieh Huang ,  Shao-Ying Ting ,  Cheng-Pin Chen ,  Wei-Chen Chien ,  Chih-Chin Cheng ,  Chih-Hung Tseng

IPC: H01L33/38 ,  H01L33/46

CPC classification number: H01L33/38 ,  H01L33/36 ,  H01L33/382 ,  H01L33/385 ,  H01L33/387 ,  H01L33/405 ,  H01L33/46 ,  H01L33/465 ,  H01L33/60

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

公开(公告)号：US10064272B2

公开(公告)日：2018-08-28

申请号：US15790168

申请日：2017-10-23

Applicant: GENESIS PHOTONICS INC.

Inventor： Hao-Chung Lee ,  Yu-Feng Lin ,  Meng-Ting Tsai

IPC: H01L33/64 ,  H05K1/05 ,  H05K3/34 ,  H05K1/02 ,  H01L33/62

CPC classification number: H05K1/05 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2924/15311 ,  H05K1/0203 ,  H05K3/3436 ,  H05K2201/10106

Abstract: A light emitting device includes a light source, a light source carrier and a circuit board. The circuit board is configured to provide power to the light source via the light source carrier. The circuit board includes a metal substrate having an upper surface, the upper surface including a first electrode area, a second electrode area and a heat conduction area; a first metal electrode formed on the first electrode area; a first insulation layer formed between the first metal electrode and the metal substrate; a second metal electrode formed on the second electrode area; a second insulation layer formed between the second metal electrode and the metal substrate; and a solder resist layer covering the upper surface of the metal substrate; wherein the heat conduction area is exposed from the solder resist layer, and the heat conduction area is connected to the light source carrier.

公开(公告)号：US20180240780A1

公开(公告)日：2018-08-23

申请号：US15959534

申请日：2018-04-23

Applicant: Genesis Photonics Inc.

Inventor： Hao-Chung Lee ,  Yu-Feng Lin ,  Xun-Xain Zhan

IPC: H01L25/065 ,  H01L33/60 ,  H01L33/50 ,  H01L27/15 ,  H01L29/866 ,  H01L33/52 ,  H01L33/48 ,  H01L33/64 ,  H01L25/075 ,  H01L33/10 ,  H01L23/60 ,  H01L23/00 ,  H01L27/02 ,  H01L33/08 ,  H01L33/56

CPC classification number: H01L25/0655 ,  H01L23/562 ,  H01L23/60 ,  H01L25/0657 ,  H01L25/0753 ,  H01L25/0756 ,  H01L27/0248 ,  H01L27/15 ,  H01L29/866 ,  H01L33/08 ,  H01L33/10 ,  H01L33/48 ,  H01L33/486 ,  H01L33/50 ,  H01L33/502 ,  H01L33/508 ,  H01L33/52 ,  H01L33/56 ,  H01L33/60 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/18161 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A package substrate is provided. The package substrate includes a base layer having a first surface and a second surface opposite to the first surface, a plurality of through holes penetrating the base layer, a first metal layer disposed on the first surface, and comprising an encircling portion and a plurality of upper pads arranged separately, wherein the encircling portion surrounds the upper pads to form a trench between the encircling portion and the upper pads, and a second metal layer disposed on the second surface and comprising a plurality of bottom pads arranged separately, wherein the bottom pads are electrically connected to the upper pads via the through holes respectively. The through holes are positioned under the upper pads and the encircling portion of the first metal layer is electrically floating.

公开(公告)号：US10050183B2

公开(公告)日：2018-08-14

申请号：US15405323

申请日：2017-01-13

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yu-Feng Lin ,  Yi-Ru Huang

IPC: H01L33/48 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01L33/50 ,  H01L33/54 ,  H01L33/62

Abstract: A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. The light emitting unit is disposed on the light transmissive layer and at least a part of the first electrode and a part of the second electrode are exposed by the light transmissive layer. The encapsulant encapsulates the light emitting unit and at least exposes a part of the first electrode and a part of the second electrode. Each of the first electrode and the second electrode extends outward from the epitaxial structure layer, and covers at least a part of an upper surface of the encapsulant, respectively.

公开(公告)号：US20180190887A1

公开(公告)日：2018-07-05

申请号：US15908779

申请日：2018-02-28

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L33/60 ,  H01L33/58 ,  H01L33/46 ,  H01L33/50 ,  H01L33/54

CPC classification number: H01L33/60 ,  H01L33/46 ,  H01L33/50 ,  H01L33/54 ,  H01L33/58

Abstract: A light emitting device structure includes a light emitting device, a molding compound, a transparent substrate and a reflective layer. The light emitting device has an upper surface and a lower surface opposite to each other, a side surface connecting the upper and lower surfaces, and a first pad and a second pad located on the lower surface and separated from each other. The molding compound at least encapsulates the upper surface and the side surface, and exposes the first pad and the second pad. The transparent substrate is disposed above the upper surface of the light emitting device, and the molding compound is located between the transparent substrate and the light emitting device. The reflective layer directly covers the side surface of the light emitting device, wherein the molding compound encapsulates the reflective layer and exposes a bottom surface of the reflective layer.