Patent search ap:"Goji SHIGA" Page 2

11.

发明授权
Dicing tape-integrated film for semiconductor back surface 有权

公开(公告)号：US08698324B2

公开(公告)日：2014-04-15

申请号：US12975641

申请日：2010-12-22

Applicant: Naohide Takamoto , Takeshi Matsumura , Goji Shiga

Inventor： Naohide Takamoto , Takeshi Matsumura , Goji Shiga

IPC: H01L23/48 , H01L21/50

Abstract: The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which the film for flip chip type semiconductor back surface contains a black pigment.

12.

发明授权
Dicing tape-integrated film for semiconductor back surface, and process for producing semiconductor device 有权

公开(公告)号：US08647956B2

公开(公告)日：2014-02-11

申请号：US13191697

申请日：2011-07-27

Applicant: Fumiteru Asai , Goji Shiga , Naohide Takamoto

Inventor： Fumiteru Asai , Goji Shiga , Naohide Takamoto

IPC: H01L21/00 , H01L21/331

Abstract: The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material layer, a first pressure-sensitive adhesive layer and a second pressure-sensitive adhesive layer stacked in this order, and a film for semiconductor back surface stacked on the second pressure-sensitive adhesive layer of the dicing tape, in which a peel strength Y between the first pressure-sensitive adhesive layer and the second pressure-sensitive adhesive layer is larger than a peel strength X between the second pressure-sensitive adhesive layer and the film for semiconductor back surface, and in which the peel strength X is from 0.01 to 0.2 N/20 mm, and the peel strength Y is from 0.2 to 10 N/20 mm.

13.

发明授权
Dicing tape-integrated film for semiconductor back surface 有权
Title translation: 用于半导体背面的切割胶带一体化膜

公开(公告)号：US08643194B2

公开(公告)日：2014-02-04

申请号：US13088737

申请日：2011-04-18

Applicant: Naohide Takamoto , Goji Shiga , Fumiteru Asai , Akiyoshi Yamamoto , Tomokazu Takahashi

Inventor： Naohide Takamoto , Goji Shiga , Fumiteru Asai , Akiyoshi Yamamoto , Tomokazu Takahashi

IPC: H01L23/48 , H01L21/50

CPC classification number: H01L21/6836 , C09J7/20 , C09J2201/36 , C09J2201/606 , C09J2203/326 , C09J2205/31 , H01L21/561 , H01L23/3164 , H01L24/81 , H01L2221/68327 , H01L2224/16225 , H01L2224/81007 , H01L2224/81191 , H01L2924/14 , Y10T428/2809 , H01L2924/00

Abstract: The present invention provides a dicing tape-integrated film for semiconductor back surface including: a dicing tape including a base material and a pressure-sensitive adhesive layer on the base material; and a film for flip chip type semiconductor back surface, which is provided on the pressure-sensitive adhesive layer, in which at least a part of the pressure-sensitive adhesive layer has been cured beforehand by irradiation with a radiation ray.

Abstract translation: 本发明提供了一种用于半导体背面的切割带一体化膜，包括：在基材上包括基材和压敏粘合剂层的切割带; 以及设置在压敏粘合剂层上的倒装芯片型半导体背表面的膜，其中至少一部分粘合剂层已经通过辐射线照射被预先固化。

14.

发明授权
Film for flip chip type semiconductor back surface 有权
Title translation: 倒装芯片型半导体背面薄膜

公开(公告)号：US08450189B2

公开(公告)日：2013-05-28

申请号：US13192068

申请日：2011-07-27

Applicant: Goji Shiga , Naohide Takamoto , Fumiteru Asai

Inventor： Goji Shiga , Naohide Takamoto , Fumiteru Asai

IPC: H01L21/00

CPC classification number: H01L23/3164 , C09J163/00 , H01L21/561 , H01L21/6836 , H01L23/3114 , H01L23/544 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/92 , H01L2221/68327 , H01L2221/68377 , H01L2221/68386 , H01L2223/54433 , H01L2223/54473 , H01L2224/13099 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/73204 , H01L2224/81815 , H01L2224/8191 , H01L2224/92125 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01051 , H01L2924/01056 , H01L2924/01073 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/3511 , Y10T428/28 , H01L2924/00014 , H01L2924/01083 , H01L2924/00

Abstract: The present invention relates to a film for flip chip type semiconductor back surface to be formed on the back surface of a semiconductor element flip chip-connected to an adherend, the film for flip chip type semiconductor back surface having a tensile storage elastic modulus at 25° C. after thermal curing within a range of from 10 GPa to 30 GPa, in which the tensile storage elastic modulus at 25° C. after thermal curing of the film for flip chip type semiconductor back surface falls within a range of from 4 times to 20 times the tensile storage elastic modulus at 25° C. before thermal curing thereof.

Abstract translation: 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，该薄膜形成在与被粘物相连的半导体元件倒装芯片的背面上，该倒装芯片型半导体背表面膜的拉伸储能弹性模量为25 在热固化后在10GPa至30GPa的范围内的热固化温度，其中用于倒装芯片型半导体背表面的膜的热固化后25℃下的拉伸储存弹性模量落在4倍至25℃下的拉伸储存弹性模量的20倍。

15.

发明申请
THERMALLY RELEASABLE SHEET-INTEGRATED FILM FOR SEMICONDUCTOR BACK SURFACE, METHOD OF COLLECTING SEMICONDUCTOR ELEMENT, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE 有权
Title translation: 用于半导体背面的热可释放片材集合膜，收集半导体元件的方法和制造半导体器件的方法

公开(公告)号：US20120028442A1

公开(公告)日：2012-02-02

申请号：US13190664

申请日：2011-07-26

Applicant: Naohide TAKAMOTO , Goji SHIGA , Fumiteru ASAI

Inventor： Naohide TAKAMOTO , Goji SHIGA , Fumiteru ASAI

IPC: H01L21/78 , C09J7/02 , B32B7/06

CPC classification number: C09J5/06 , C09J7/22 , C09J7/29 , C09J7/38 , C09J2201/36 , C09J2203/326 , C09J2205/102 , C09J2205/11 , C09J2205/302 , H01L21/563 , H01L21/6836 , H01L23/544 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2221/68327 , H01L2221/68381 , H01L2223/54433 , H01L2223/54486 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16238 , H01L2224/73204 , H01L2224/81193 , H01L2224/81203 , H01L2224/81911 , H01L2224/83104 , H01L2924/10253 , Y10T428/25 , Y10T428/31504 , H01L2924/00014 , H01L2924/01082 , H01L2924/0103 , H01L2924/01083 , H01L2924/00012 , H01L2924/014 , H01L2924/01047 , H01L2924/01029 , H01L2924/00

Abstract: The present invention relates to a thermally releasable sheet-integrated film for semiconductor back surface, which includes: a pressure-sensitive adhesive sheet including a base material layer and a pressure-sensitive adhesive layer, and a film for semiconductor back surface formed on the pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet, in which the pressure-sensitive adhesive sheet is a thermally releasable pressure-sensitive adhesive sheet whose peel force from the film for semiconductor back surface decreases upon heating.

Abstract translation: 本发明涉及一种用于半导体背表面的可热分解的片状集成膜，其包括：包含基材层和压敏粘合剂层的压敏粘合片，以及在压力下形成的半导体背面的膜粘合片的粘合片的粘合剂层，其中粘合片是其半导体背面的膜的剥离力在加热时降低的可热剥离的压敏粘合片。

16.

发明申请
FILM FOR FLIP CHIP TYPE SEMICONDUCTOR BACK SURFACE, AND DICING TAPE-INTEGRATED FILM FOR SEMICONDUCTOR BACK SURFACE 审中-公开
Title translation: 用于倒片芯片型半导体背表面的薄膜和用于半导体背面的双面胶带

公开(公告)号：US20120021174A1

公开(公告)日：2012-01-26

申请号：US13170669

申请日：2011-06-28

Applicant: Naohide TAKAMOTO , Goji SHIGA , Fumiteru ASAI

Inventor： Naohide TAKAMOTO , Goji SHIGA , Fumiteru ASAI

IPC: B32B33/00 , B32B7/12 , B32B7/02

CPC classification number: H01L21/6836 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2221/68327 , H01L2221/68377 , H01L2223/5448 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/81007 , H01L2224/81097 , H01L2224/81193 , H01L2224/81815 , H01L2224/83102 , H01L2224/8391 , H01L2924/00013 , H01L2924/14 , Y10T428/24355 , Y10T428/31504 , H01L2924/00014 , H01L2924/01082 , H01L2924/01047 , H01L2924/01029 , H01L2924/0103 , H01L2924/01083 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00

Abstract: The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected to an adherend, wherein said film has, on one surface thereof where said film does not face the back surface of the semiconductor element when said film is formed on the back surface of the semiconductor element, a surface roughness (Ra) within a range of from 50 nm to 3 μm before curing.

Abstract translation: 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，该薄膜形成在与被粘物相连的半导体元件倒装芯片的背面上，其中所述薄膜在其一个表面上没有所述薄膜不面向背面当在半导体元件的背面上形成所述膜时，半导体元件的表面，固化前的表面粗糙度（Ra）在50nm〜3μm的范围内。

17.

发明申请
FILM FOR FLIP CHIP TYPE SEMICONDUCTOR BACK SURFACE 有权
Title translation: 片状薄膜型半导体背面膜

公开(公告)号：US20110156279A1

公开(公告)日：2011-06-30

申请号：US12975893

申请日：2010-12-22

Applicant: Naohide TAKAMOTO , Takeshi MATSUMURA , Goji SHIGA

Inventor： Naohide TAKAMOTO , Takeshi MATSUMURA , Goji SHIGA

IPC: H01L23/48 , H01L21/50 , B32B7/12

CPC classification number: H01L21/6836 , H01L21/561 , H01L23/3164 , H01L23/544 , H01L24/81 , H01L2221/68327 , H01L2221/68377 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/73204 , H01L2224/8101 , H01L2224/81193 , H01L2224/81203 , H01L2224/814 , H01L2224/831 , H01L2924/01004 , H01L2924/01019 , H01L2924/0102 , H01L2924/01025 , H01L2924/01046 , H01L2924/01079 , H01L2924/3025 , Y10T428/28 , H01L2924/014 , H01L2924/01082 , H01L2924/01047 , H01L2924/01029 , H01L2924/0103 , H01L2924/01083 , H01L2924/00014 , H01L2924/00

Abstract: The present invention provides a film for flip chip type semiconductor back surface, which is to be formed on a back surface of a semiconductor element flip-chip connected on an adherend, the film including a wafer adhesion layer and a laser marking layer, in which the wafer adhesion layer has a light transmittance of 40% or more in terms of a light having a wavelength of 532 nm and the laser marking layer has a light transmittance of less than 40% in terms of a light having a wavelength of 532 nm.

Abstract translation: 本发明提供了一种用于倒装芯片型半导体背表面的薄膜，其将形成在连接在被粘物上的半导体元件倒装芯片的背面上，该薄膜包括晶片粘合层和激光标记层，其中晶片粘合层的波长为532nm的光的透光率为40％以上，激光标记层的波长为532nm的光的透光率为40％以下。

18.

发明授权
Film for back surface of flip-chip semiconductor 有权

公开(公告)号：US09911683B2

公开(公告)日：2018-03-06

申请号：US13642325

申请日：2011-04-18

Applicant: Naohide Takamoto , Goji Shiga

Inventor： Naohide Takamoto , Goji Shiga

IPC: H01L23/48 , H01L23/52 , H01L29/40 , H01L21/683 , H01L21/50 , H01L21/78 , H01L23/00 , H01L23/31 , H01L23/544

CPC classification number: H01L23/48 , H01L21/50 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L23/544 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/92 , H01L2221/68327 , H01L2221/68377 , H01L2223/54486 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2224/81815 , H01L2224/8191 , H01L2224/83862 , H01L2224/92125 , H01L2924/01019 , H01L2924/12042 , H01L2924/00 , H01L2924/3512

Abstract: The film for back surface of flip-chip semiconductor according to the present invention is a film for back surface of flip-chip semiconductor to be formed on a back surface of a semiconductor element having been flip-chip connected onto an adherend, wherein a tensile storage elastic modulus at 23° C. after thermal curing is 10 GPa or more and not more than 50 GPa. According to the film for back surface of flip-chip semiconductor of the present invention, since it is formed on the back surface of a semiconductor element having been flip-chip connected onto an adherend, it fulfills a function to protect the semiconductor element. In addition, since the film for back surface of flip-chip semiconductor according to the present invention has a tensile storage elastic modulus at 23° C. after thermal curing of 10 GPa or more, a warp of the semiconductor element generated at the time of flip-chip connection of a semiconductor element onto an adherend can be effectively suppressed or prevented.