公开(公告)号：US09099573B2

公开(公告)日：2015-08-04

申请号：US14485663

申请日：2014-09-12

Applicant: Yeon Woo Seo ,  Jung-Sub Kim ,  Young Jin Choi ,  Denis Sannikov ,  Han Kyu Seong ,  Dae Myung Chun ,  Jae Hyeok Heo

Inventor： Yeon Woo Seo ,  Jung-Sub Kim ,  Young Jin Choi ,  Denis Sannikov ,  Han Kyu Seong ,  Dae Myung Chun ,  Jae Hyeok Heo

IPC: H01L21/00 ,  H01L33/00 ,  H01L33/14 ,  H01L33/24 ,  H01L33/38 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32

CPC classification number: H01L33/24 ,  F21K9/232 ,  F21S41/147 ,  F21S45/43 ,  F21S45/47 ,  F21Y2115/10 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/145 ,  H01L33/18 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/387 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method of manufacturing a light emitting device having a plurality of nano-light emitting structures is provided. The method comprises depositing a first conductivity-type semiconductor material on a substrate to form a base layer. A mask having a plurality of openings is formed on the base layer. The first conductivity-type nitride semiconductor material is deposited in the openings of the mask to form a plurality of nanocores having a main portion bounded by the mask and an exposed tip portion. A current blocking layer is deposited on the tip portion of the nanocores. A portion of the mask is removed to expose the main portion of the nanocore. An active material layer is deposited on the plurality of nanocores. A second conductivity-type nitride semiconductor layer is deposited on the active material layer.

Abstract translation: 提供一种制造具有多个纳米发光结构的发光器件的方法。 该方法包括在衬底上沉积第一导电型半导体材料以形成基底层。 在基层上形成具有多个开口的掩模。 第一导电型氮化物半导体材料沉积在掩模的开口中以形成具有由掩模界定的主要部分和暴露的尖端部分的多个纳米孔。 电流阻挡层沉积在纳米孔的尖端部分上。 去除掩模的一部分以暴露纳米孔的主要部分。 活性物质层沉积在多个纳米孔上。 第二导电型氮化物半导体层沉积在活性材料层上。

公开(公告)号：US09070478B2

公开(公告)日：2015-06-30

申请号：US13483730

申请日：2012-05-30

Applicant: Mann Ho Cho ,  Ju Heyuck Baeck ,  Tae Hyeon Kim ,  Hye Jin Choi

Inventor： Mann Ho Cho ,  Ju Heyuck Baeck ,  Tae Hyeon Kim ,  Hye Jin Choi

IPC: G11C11/00 ,  G11C11/56 ,  G11C13/00 ,  H01L45/00

CPC classification number: G11C11/5678 ,  G11C13/0004 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/1625 ,  H01L45/1683

Abstract: A variable resistive memory device includes an array of a plurality of memory cells. Each of the plurality of memory cells includes first and second electrodes, and an SbmSen material layer (where m and n are positive numbers, respectively) interposed between the first electrode and the second electrode. The SbmSen material layer includes a separation structure in which a plurality of Sb atoms are in contact with a plurality of Se atoms.

Abstract translation: 可变电阻存储器件包括多个存储器单元的阵列。 多个存储单元中的每一个包括第一和第二电极以及介于第一电极和第二电极之间的SbmSen材料层（其中m和n分别为正数）。 SbmSen材料层包括其中多个Sb原子与多个Se原子接触的分离结构。

公开(公告)号：US09054226B2

公开(公告)日：2015-06-09

申请号：US13546415

申请日：2012-07-11

Applicant: Sung-Ho Lee ,  Jin Choi ,  Yong-Ho Yoo ,  Jong-Hyuk Kang ,  Hyun-Joo Cha ,  Hee-Dong Park ,  Tae-Jung Park

Inventor： Sung-Ho Lee ,  Jin Choi ,  Yong-Ho Yoo ,  Jong-Hyuk Kang ,  Hyun-Joo Cha ,  Hee-Dong Park ,  Tae-Jung Park

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L28/91 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/60

Abstract: A semiconductor device includes a plurality of lower electrodes on a substrate, with each of the lower electrodes extending in a height direction from the substrate and including sidewalls, the lower electrodes being spaced apart from each other in a first direction and in a second direction, a plurality of first supporting layer patterns contacting the sidewalls of the lower electrodes, the first supporting layer patterns extending in the first direction between ones of the lower electrodes adjacent in the second direction, a plurality of second supporting layer patterns contacting the sidewalls of the lower electrodes, the second supporting layer pattern extending in the second direction between ones of the lower electrodes adjacent in the first direction, the plurality of second supporting layer patterns being spaced apart from the plurality of first supporting layer patterns in the height direction.

Abstract translation: 半导体器件包括在基片上的多个下电极，其中每个下电极从衬底沿高度方向延伸并且包括侧壁，下电极在第一方向和第二方向彼此间隔开， 与下电极的侧壁接触的多个第一支撑层图案，第一支撑层图案沿着第一方向在第二方向上相邻的下电极之间延伸;多个第二支撑层图案，其与下部电极的侧壁接触; 电极，所述第二支撑层图案沿着所述第二方向在与所述第一方向相邻的所述下电极中的所述第二方向延伸，所述多个第二支撑层图案在所述高度方向上与所述多个第一支撑层图案间隔开。

公开(公告)号：US09017904B2

公开(公告)日：2015-04-28

申请号：US13950708

申请日：2013-07-25

Applicant: Jin Choi ,  Heung-Suk Oh ,  Sin-jeung Park ,  Rae-won Yi

Inventor： Jin Choi ,  Heung-Suk Oh ,  Sin-jeung Park ,  Rae-won Yi

IPC: G03F7/00 ,  H01L21/308 ,  G06F17/50 ,  G03F1/00 ,  H01L21/027

CPC classification number: G06F17/5081 ,  G03F1/00 ,  G03F7/70433 ,  G03F7/70558 ,  H01L21/027 ,  H01L21/308

Abstract: A method of providing a photolithography pattern can be provided by identifying at least one weak feature from among a plurality of features included in a photolithography pattern based on a feature parameter that is compared to a predetermined identification threshold value for the feature parameter. A first region of the weak feature can be classified as a first dosage region and a second region of the weak feature can be classified as a second dosage region. Related methods and apparatus are also disclosed.

Abstract translation: 可以通过基于与特征参数的预定识别阈值进行比较的特征参数来识别光刻图案中包括的多个特征中的至少一个弱特征来提供提供光刻图案的方法。 弱特征的第一区域可以分类为第一剂量区域，弱特征的第二区域可以分类为第二剂量区域。 还公开了相关方法和装置。

公开(公告)号：US09006779B2

公开(公告)日：2015-04-14

申请号：US14237302

申请日：2012-08-02

Applicant: Won-Jin Choi ,  Jung-Won Park

Inventor： Won-Jin Choi ,  Jung-Won Park

IPC: H01L33/32 ,  H01L33/22 ,  H01L21/20 ,  H01L33/14

CPC classification number: H01L33/32 ,  H01L33/14

Abstract: Disclosed are a nitride semiconductor light-emitting element and a method for manufacturing the same. The nitride semiconductor light-emitting element according to the present invention comprises: a current blocking part disposed between a substrate and an n-type nitride layer; an activation layer disposed on the top surface of the n-type nitride layer; and a p-type nitride layer disposed on the top surface of the activation layer, wherein the current blocking part is an AlxGa(1-x)N layer, and the Al content x times layer thickness (μm) is in the range of 0.01-0.06. Accordingly, the nitride semiconductor light-emitting element can increase the luminous efficiency by having a current blocking part which prevents current leakage from occurring.

Abstract translation: 公开了一种氮化物半导体发光元件及其制造方法。 根据本发明的氮化物半导体发光元件包括：设置在衬底和n型氮化物层之间的电流阻挡部分; 激活层，设置在所述n型氮化物层的顶表面上; 以及设置在活化层顶表面上的p型氮化物层，其中电流阻挡部分是Al x Ga（1-x）N层，并且Al含量x倍层厚度（μm）在0.01的范围内 -0.06。 因此，氮化物半导体发光元件可以通过具有防止电流泄漏发生的电流阻挡部来提高发光效率。

公开(公告)号：US09006772B2

公开(公告)日：2015-04-14

申请号：US13429783

申请日：2012-03-26

Applicant: Jae-Goo Lee ,  Doo-Hwan Kim ,  Min-Woo Lee ,  Sung-Jin Choi ,  Young-Mo Koo

Inventor： Jae-Goo Lee ,  Doo-Hwan Kim ,  Min-Woo Lee ,  Sung-Jin Choi ,  Young-Mo Koo

IPC: H01L33/00 ,  H01L51/40 ,  F21V5/00 ,  H01L29/08 ,  H01L27/15 ,  H01L29/267 ,  H01L51/52

CPC classification number: H01L51/5237 ,  H01L51/5203 ,  H01L51/524 ,  H01L2251/5361

Abstract: An organic light emitting diode (OLED) lighting apparatus includes a light emitting panel including an organic light emitting diode, a housing for housing the light emitting panel, a cover coupled to the housing and covering a front-side edge of the light emitting panel, a plurality of pins disposed between the housing and the light emitting panel and supporting an edge of the light emitting panel, and at least one contact bar disposed between the plurality of pins and a back-side edge of the light emitting panel.

Abstract translation: 有机发光二极管（OLED）照明装置包括：发光面板，其包括有机发光二极管，用于容纳发光面板的壳体;联接到壳体并覆盖发光面板的前侧边缘的盖; 设置在所述壳体和所述发光面板之间并支撑所述发光面板的边缘的多个销以及设置在所述多个销之间的至少一个接触杆和所述发光面板的后侧边缘。

公开(公告)号：US09002382B2

公开(公告)日：2015-04-07

申请号：US12020751

申请日：2008-01-28

Applicant: Chang-seog Ko ,  Hyun-cheol Park ,  Young-sun Kim ,  Yoo-jin Choi

Inventor： Chang-seog Ko ,  Hyun-cheol Park ,  Young-sun Kim ,  Yoo-jin Choi

IPC: H04W24/00 ,  H04M3/42 ,  H04W4/02 ,  H04W8/00 ,  H04L29/08

CPC classification number: H04W4/008 ,  H04L67/16 ,  H04L67/18 ,  H04W4/02 ,  H04W4/021 ,  H04W4/029 ,  H04W4/80 ,  H04W8/005

Abstract: A method and apparatus for identifying a neighboring device are provided. The method of identifying a neighboring device, which is performed in a user terminal, includes: obtaining identification information and location information of a plurality of neighboring devices that can wirelessly communicate with the user terminal; extracting the identification information of one of the neighboring devices, the neighboring device being in the actual location range within the field of vision of the user terminal; and using the extracted identification information to request that the neighboring device perform wireless communication with the user terminal. According to the method and apparatus, identification information of a neighboring device with which a user terminal desires to perform wireless communication can be obtained using a viewfinder or liquid crystal display of the user terminal.

Abstract translation: 提供了一种用于识别相邻设备的方法和装置。 在用户终端中执行的识别相邻设备的方法包括：获得可以与用户终端无线通信的多个相邻设备的识别信息和位置信息; 提取所述相邻设备之一的所述识别信息，所述相邻设备处于所述用户终端的视野内的实际位置范围内; 并且使用所提取的识别信息来请求相邻设备执行与用户终端的无线通信。 根据该方法和装置，可以使用用户终端的取景器或液晶显示器来获得用户终端希望进行无线通信的相邻设备的识别信息。

公开(公告)号：US09000165B2

公开(公告)日：2015-04-07

申请号：US14008167

申请日：2012-03-30

Applicant: Soo Jin Choi ,  Seong Soo Oh ,  Yong Suk Jin ,  Yong Tae Kim ,  Seung Jae Lee ,  Jeong Hyun Son

Inventor： Soo Jin Choi ,  Seong Soo Oh ,  Yong Suk Jin ,  Yong Tae Kim ,  Seung Jae Lee ,  Jeong Hyun Son

IPC: C07D401/06 ,  C07D215/227 ,  A61K31/4709 ,  A61K31/496

CPC classification number: C07D215/227 ,  A61K31/4709 ,  A61K31/496

Abstract: The present invention relates to a process for preparation of aripiprazole crystal form II by recrystallizing aripiprazole in a mixture of acetone and 1-methoxy-2-propanol or a single solvent of 1-methoxy-2-propanol. The simple process according to the present invention can produce aripiprazole crystal form II with high purity and high yield in a mass scale.

Abstract translation: 本发明涉及通过将阿立哌唑在丙酮和1-甲氧基-2-丙醇或1-甲氧基-2-丙醇的单一溶剂的混合物中重结晶制备阿立哌唑晶型II的方法。 根据本发明的简单方法可以以大规模生产高纯度和高产率的阿立哌唑晶型II。

公开(公告)号：US08980751B2

公开(公告)日：2015-03-17

申请号：US13014508

申请日：2011-01-26

Applicant: Gerard M. Schmid ,  Michael N. Miller ,  Byung-Jin Choi ,  Douglas J. Resnick ,  Sidlgata V. Sreenivasan ,  Frank Y. Xu ,  Darren D. Donaldson

Inventor： Gerard M. Schmid ,  Michael N. Miller ,  Byung-Jin Choi ,  Douglas J. Resnick ,  Sidlgata V. Sreenivasan ,  Frank Y. Xu ,  Darren D. Donaldson

IPC: H01L21/311 ,  H01J37/20 ,  G03F7/42 ,  B82Y40/00 ,  B82Y10/00 ,  G03F7/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/42

Abstract: Polymerized material on a substrate may be removed by exposure to vacuum ultraviolet (VUV) radiation from an energy source within a gaseous atmosphere of a controlled composition. Following such removal, additional etching techniques are also described for nano-imprinting.

Abstract translation: 可以通过暴露于受控组合物的气体气氛中的来自能量源的真空紫外（VUV）辐射来去除衬底上的聚合材料。 在这种去除之后，还描述了用于纳米压印的附加蚀刻技术。

公开(公告)号：US08969653B2

公开(公告)日：2015-03-03

申请号：US13394113

申请日：2010-08-26

Applicant: Yong Song Gho ,  Yoon Keun Kim ,  Eun Young Lee ,  Sung Wook Hong ,  Ji Hyun Kim ,  Seng Jin Choi

Inventor： Yong Song Gho ,  Yoon Keun Kim ,  Eun Young Lee ,  Sung Wook Hong ,  Ji Hyun Kim ,  Seng Jin Choi

IPC: A61K39/02 ,  A01K67/027 ,  C12P1/04

CPC classification number: C12Q1/6883 ,  A01K2207/00 ,  A01K2267/0375 ,  C12P1/04 ,  C12Q2600/158 ,  Y02P20/582

Abstract: The present application relates to extracellular vesicles (EVs) derived from gram-positive bacteria. In detail, the present application provides animal models of disease using extracellular vesicles derived from gram-positive bacteria, provides a method for screening an active candidate substance which is capable of preventing or treating diseases through the animal models of disease, provides vaccines for preventing or treating diseases caused by extracellular vesicles derived from gram-positive bacteria, and provides a method for diagnosing the causative factors of diseases caused by gram-positive bacteria using extracellular vesicles.

Abstract translation: 本申请涉及来自革兰氏阳性菌的细胞外囊泡（EVs）。 具体地，本申请使用来自革兰氏阳性细菌的细胞外囊泡提供疾病的动物模型，提供了通过动物疾病模型预防或治疗疾病的活性候选物质的筛选方法，提供预防或 治疗由革兰氏阳性细菌产生的细胞外囊泡引起的疾病，并提供了一种用细胞外囊泡诊断由革兰氏阳性细菌引起的疾病的致病因子的方法。