EMBEDDED POWER STAGE MODULE
    15.
    发明申请
    EMBEDDED POWER STAGE MODULE 有权
    嵌入式电源模块

    公开(公告)号:US20130221442A1

    公开(公告)日:2013-08-29

    申请号:US13406257

    申请日:2012-02-27

    Applicant: Rajeev JOSHI

    Inventor: Rajeev JOSHI

    Abstract: One aspect of the invention pertains to an integrated circuit package with an embedded power stage. The integrated circuit package includes a first field effect transistor (FET) and a second FET that are electrically coupled with one another. The FETs are embedded in a dielectric substrate that is formed from multiple dielectric layers. The dielectric layers are laminated together with one or more foil layers that help form an electrical interconnect for the package. Various embodiments relate to method of forming the above package.

    Abstract translation: 本发明的一个方面涉及具有嵌入式功率级的集成电路封装。 集成电路封装包括彼此电耦合的第一场效应晶体管(FET)和第二FET。 FET被嵌入在由多个电介质层形成的电介质基板中。 电介质层与一个或多个箔层压在一起,这些箔层有助于形成用于封装的电互连。 各种实施例涉及形成上述包装的方法。

    High performance multi-chip flip chip package

    公开(公告)号:US07537958B1

    公开(公告)日:2009-05-26

    申请号:US11283077

    申请日:2005-11-18

    Applicant: Rajeev Joshi

    Inventor: Rajeev Joshi

    Abstract: A structure and method of manufacture for an improved multi-chip semiconductor package that reduces package resistance to a negligible level, and offers superior thermal performance. Housing of multiple dies is facilitated by providing electrically isolated lead frames that are separated from a common base carrier by a non-conductive layer of laminating material. A silicon die is attached inside a cavity formed in each lead frame. Direct connection of the active surface of the silicon die to the printed circuit board is then made by an array of solder bumps that is distributed across the surface of each die as well as the edges of the lead frame adjacent to each die.

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