Abstract:
A semiconductor die package is disclosed. The die package includes a semiconductor die having a first side and a second side, a vertical transistor, and a bond pad at the first side. A passivation layer having a first aperture is on the first side, and the bond pad is exposed through the first aperture. An underbump metallurgy layer is on and in direct contact with the passivation layer. The underbump metallurgy layer is within the first aperture and contacts the bond pad. A dielectric layer comprising a second aperture is on and in direct contact with the underbump metallurgy layer. A solder structure is on the underbump metallurgy layer and is within the second aperture of the dielectric layer.
Abstract:
An integrated circuit package includes a die and an electrically conductive cap attached to the top surface of the die. The die has a top surface, a bottom surface, an edge surface, a plurality of input/output terminals on the bottom surface of the die, and an input/output terminal pad on the top surface of the die. An electrically conductive arrangement is electrically connected to the input/output terminals on the bottom surface of the die providing an arrangement for electrically connecting the input/output terminals on the bottom surface of the die to other electrical elements. The electrically conductive cap attached to the top surface of the die provides an arrangement for electrically connecting the input/output terminal on the top surface of the die to other electrical elements and may be used to provide improved heat dissipation from the die.
Abstract:
The present invention discloses the use of a dielectric substrate panel suitable for supporting a plurality of independently packaged ICs. The substrate panel has a plurality of conductive landings arranged on its top surface, a plurality of conductive contacts arranged on its bottom surface and a multiplicity of electrically conductive vias. The vias pass through the substrate panel and are arranged to interconnect selected landings with their associated conductive contacts. The top surface of the substrate panel also includes a number of die attach areas. During packaging, dies are secured to their associated die attach areas on the substrate panel and electrically coupled to appropriate conductive landings. An encapsulant is then formed over each of the dies for protection.
Abstract:
Semiconductor die packages are disclosed. An exemplary semiconductor die package includes a premolded substrate. The premolded substrate can have a semiconductor die attached to it, and an encapsulating material may be disposed over the semiconductor die.
Abstract:
One aspect of the invention pertains to an integrated circuit package with an embedded power stage. The integrated circuit package includes a first field effect transistor (FET) and a second FET that are electrically coupled with one another. The FETs are embedded in a dielectric substrate that is formed from multiple dielectric layers. The dielectric layers are laminated together with one or more foil layers that help form an electrical interconnect for the package. Various embodiments relate to method of forming the above package.
Abstract:
A semiconductor die package capable of being mounted to a motherboard is disclosed. The semiconductor die package includes a substrate, and a first semiconductor die mounted on the substrate, where the first semiconductor die includes a first vertical device comprising a first input region and a first output region at opposite surfaces of the first semiconductor die. The semiconductor die package includes a second semiconductor die mounted on the substrate, where second semiconductor die comprises a second vertical device comprising a second input region and a second output region at opposite surfaces of the second semiconductor die. A substantially planar conductive node clip electrically communicates the first output region in the first semiconductor die and the second input region in the second semiconductor die. The first semiconductor die and the second semiconductor die are between the substrate and the conductive node clip.
Abstract:
A semiconductor die package capable of being mounted to a motherboard is disclosed. The semiconductor die package includes a substrate, and a first semiconductor die mounted on the substrate, where the first semiconductor die includes a first vertical device comprising a first input region and a first output region at opposite surfaces of the first semiconductor die. The semiconductor die package includes a second semiconductor die mounted on the substrate, where second semiconductor die comprises a second vertical device comprising a second input region and a second output region at opposite surfaces of the second semiconductor die. A substantially planar conductive node clip electrically communicates the first output region in the first semiconductor die and the second input region in the second semiconductor die. The first semiconductor die and the second semiconductor die are between the substrate and the conductive node clip.
Abstract:
A packaged semiconductor device (a wafer-level chip scale package) containing a conductive adhesive material as an electrical interconnect route between the semiconductor die and a patterned conductive substrate is described. The patterned conductive substrate acts not only as a substrate, but also as a redistribution layer that converts the dense pad layout of the die to a larger array configuration of the solder balls in the circuit board. Using the invention allows the formation of a lower priced chip scale package that also overcomes the restriction of the die size used in die-sized chip packages and the input-output pattern that can be required by the printed circuit board. Thus, the invention can provide a familiar pitch (i.e., interface) to the printed circuit board for any small die.
Abstract:
A method for forming a stud bumped semiconductor die is disclosed. The method includes forming a ball at the tip of a coated wire passing through a hole in a capillary, where the coated wire has a core and an oxidation-resistant coating. The formed ball is pressed to the conductive region on the semiconductor die. The coated wire is cut, thereby leaving a conductive stud bump on the conductive region, where the conductive stud bump includes an inner conductive portion and an outer oxidation-resistant layer.
Abstract:
A structure and method of manufacture for an improved multi-chip semiconductor package that reduces package resistance to a negligible level, and offers superior thermal performance. Housing of multiple dies is facilitated by providing electrically isolated lead frames that are separated from a common base carrier by a non-conductive layer of laminating material. A silicon die is attached inside a cavity formed in each lead frame. Direct connection of the active surface of the silicon die to the printed circuit board is then made by an array of solder bumps that is distributed across the surface of each die as well as the edges of the lead frame adjacent to each die.