公开(公告)号：US20110176570A1

公开(公告)日：2011-07-21

申请号：US13064337

申请日：2011-03-21

申请人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Tomoyuki Oki ,  Naoki Jogan

发明人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Tomoyuki Oki ,  Naoki Jogan

IPC分类号： H01S5/20

CPC分类号： H01S5/1833 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18322 ,  H01S5/18325 ,  H01S5/18383 ,  H01S5/2086 ,  H01S5/3095 ,  H01S5/4087

摘要： A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.

公开(公告)号：US20110122910A1

公开(公告)日：2011-05-26

申请号：US12929515

申请日：2011-01-31

申请人： Rintaro Koda ,  Takahiro Arakida ,  Yuji Masui ,  Tomoyuki Oki

发明人： Rintaro Koda ,  Takahiro Arakida ,  Yuji Masui ,  Tomoyuki Oki

IPC分类号： H01S5/026 ,  H01S5/323

CPC分类号： H01S5/0262 ,  H01S5/0264 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18375

摘要： The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.

摘要翻译： 本发明提供一种半导体装置，其能够实现在使元件彼此粘合时减少诸如裂纹的缺陷的发生。 半导体器件包括彼此粘附的第一元件和第二元件。 第一元件和第二元件中的至少一个元件在面向第一元件和第二元件中的另一元件的一侧具有压力松弛层，并且压力松弛层包括具有突起/凹部的半导体部件，该突起/凹部包括朝向另一元件突出的突起 以及填充在突起/凹部中的凹部中的树脂部件。

公开(公告)号：US20110007765A1

公开(公告)日：2011-01-13

申请号：US12828403

申请日：2010-07-01

申请人： Masaru Kuramoto ,  Tomoyuki Oki ,  Tomoya Sugahara ,  Hiroyuki Yokoyama

发明人： Masaru Kuramoto ,  Tomoyuki Oki ,  Tomoya Sugahara ,  Hiroyuki Yokoyama

IPC分类号： H01S5/34

CPC分类号： H01S5/06216 ,  B82Y20/00 ,  H01S5/0602 ,  H01S5/06253 ,  H01S5/2009 ,  H01S5/34333

摘要： An ultrashort pulse and ultrahigh power laser diode device capable of outputting pulse laser light having higher peak power with a simple composition and a simple structure is provided. The laser diode device includes: a laminated structure composed of a first compound semiconductor layer containing n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing p-type impurity; a first electrode electrically connected to the first compound semiconductor layer; and a second electrode electrically connected to the second compound semiconductor layer, wherein the second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5*10−8 m or more, and driving is made by a pulse current having a value 10 or more times as large as a threshold current value.

摘要翻译： 提供了一种能够以简单的组成和简单结构输出具有较高峰值功率的脉冲激光的超短脉冲和超高功率激光二极管装置。 激光二极管装置包括：由包含n型杂质的第一化合物半导体层，具有量子阱结构的有源层和含有p型杂质的第二化合物半导体层构成的层叠结构; 电连接到第一化合物半导体层的第一电极; 和与第二化合物半导体层电连接的第二电极，其中第二化合物半导体层设置有厚度为1.5×10 -8 m以上的电子势垒层，并且通过具有值的脉冲电流进行驱动 大于阈值电流值的10倍以上。

公开(公告)号：US20100285625A1

公开(公告)日：2010-11-11

申请号：US12841812

申请日：2010-07-22

申请人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

发明人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

IPC分类号： H01L33/00

CPC分类号： H01S5/18311 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L33/647 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/0425 ,  H01L2924/00

摘要： A method for making a light-emitting element assembly including a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.

摘要翻译： 一种制造发光元件组件的方法，包括：具有形成在所述凹部的所述第一表面和所述内表面上的第一表面，面向所述第一表面的第二表面，凹陷部分和导电材料层的支撑基板， 和发光元件。 发光元件具有包括第一化合物半导体层，发光部和第二化合物半导体层的层叠结构，至少第二化合物半导体层和构成台面结构的发光部。 发光元件还包括形成的绝缘层，第二电极和第一电极。 台面结构被放置在凹部中，使得导电材料层和第二电极彼此至少部分接触，并且从发光部分发射的光从第一化合物半导体的第二表面侧发射 层。

公开(公告)号：US20100202482A1

公开(公告)日：2010-08-12

申请号：US12656165

申请日：2010-01-20

申请人： Yuji Masui ,  Takahiro Arakida ,  Kayoko Kikuchi ,  Terukazu Naruse ,  Tomoyuki Oki ,  Naoki Jogan

发明人： Yuji Masui ,  Takahiro Arakida ,  Kayoko Kikuchi ,  Terukazu Naruse ,  Tomoyuki Oki ,  Naoki Jogan

IPC分类号： H01S5/02

CPC分类号： H01S5/02276 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/18311 ,  H01S5/1835 ,  H01S5/34313 ,  H01S2301/176

摘要： The present invention provides a semiconductor device realizing improved adhesion between a low-dielectric-constant material and a semiconductor material. The semiconductor device includes, on a semiconductor layer, an adhesion layer and a low-dielectric-constant material layer in order from the semiconductor layer side. The adhesion layer has a projection/recess structure, and the low-dielectric-constant material layer is formed so as to bury gaps in the projection/recess structure.

摘要翻译： 本发明提供一种半导体器件，其实现了低介电常数材料与半导体材料之间的粘合性的改善。 半导体器件在半导体层上包括从半导体层侧开始的粘合层和低介电常数材料层。 粘合层具有突出/凹陷结构，并且形成低介电常数材料层以便在突出/凹陷结构中埋入间隙。

公开(公告)号：US20100046565A1

公开(公告)日：2010-02-25

申请号：US12458962

申请日：2009-07-28

申请人： Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Osamu Maeda ,  Tomoyuki Oki ,  Naoki Jogan

发明人： Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Osamu Maeda ,  Tomoyuki Oki ,  Naoki Jogan

IPC分类号： H01S5/183 ,  H01S5/028

CPC分类号： H01S5/18336 ,  H01S5/0655 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18358 ,  H01S2301/166

摘要： A vertical cavity surface emitting laser includes a layer-stack structure including, on a substrate, a transverse-mode adjustment layer, a first multilayer reflecting mirror, an active layer having a light emission region, and a second multilayer reflecting mirror in order from the substrate side, and including a current confinement layer in which a current injection region is formed in a region corresponding to the light emission region in the first multilayer reflecting mirror, between the first multilayer reflecting mirror and the active layer, between the active layer and the second multilayer reflecting mirror, or in the second multilayer reflecting mirror. In the transverse-mode adjustment layer, reflectance at an oscillation wavelength in the region opposite to a center of the light emission region is higher than that at an oscillation wavelength in the region opposite to an outer edge of the light emission region.

摘要翻译： 垂直腔表面发射激光器包括层叠结构，其包括在基板上的横向模式调整层，第一多层反射镜，具有发光区域的有源层和第二多层反射镜，从 并且包括电流限制层，其中在与第一多层反射镜中的发光区域对应的区域中在第一多层反射镜和有源层之间形成电流注入区域，在有源层和 第二多层反射镜，或第二多层反射镜。 在横模调整层中，与发光区域的中心相反的区域的振荡波长的反射率高于与发光区域的外缘相反的区域的振荡波长的反射率。

公开(公告)号：US20090168825A1

公开(公告)日：2009-07-02

申请号：US12333972

申请日：2008-12-12

申请人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

发明人： Rintaro Koda ,  Takahiro Arakida ,  Satoshi Taniguchi ,  Yuji Masui ,  Nobuhiro Suzuki ,  Tomoyuki Oki ,  Chiyomi Uchiyama ,  Kayoko Kikuchi

IPC分类号： H01S5/026 ,  H01L21/02

CPC分类号： H01S5/18311 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L33/647 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/0425 ,  H01L2924/00

摘要： A light-emitting element assembly includes a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.

摘要翻译： 发光元件组件包括具有第一表面，面向第一表面的第二表面，凹陷部分和形成在凹部的第一表面和内表面上的导电材料层的支撑基板， 发光元件。 发光元件具有包括第一化合物半导体层，发光部和第二化合物半导体层的层叠结构，至少第二化合物半导体层和构成台面结构的发光部。 发光元件还包括形成的绝缘层，第二电极和第一电极。 台面结构被放置在凹部中，使得导电材料层和第二电极彼此至少部分接触，并且从发光部分发射的光从第一化合物半导体的第二表面侧发射 层。

公开(公告)号：US09048620B2

公开(公告)日：2015-06-02

申请号：US13995409

申请日：2012-01-11

申请人： Hideki Watanabe ,  Masaru Kuramoto ,  Tomoyuki Oki

发明人： Hideki Watanabe ,  Masaru Kuramoto ,  Tomoyuki Oki

IPC分类号： H01S5/00 ,  H01S5/065 ,  H01S5/10 ,  H01S5/14 ,  H01S5/028 ,  B82Y20/00 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/22 ,  H01S5/343

CPC分类号： H01S5/0658 ,  B82Y20/00 ,  H01S5/0287 ,  H01S5/0602 ,  H01S5/0625 ,  H01S5/0657 ,  H01S5/1014 ,  H01S5/141 ,  H01S5/22 ,  H01S5/222 ,  H01S5/34333 ,  H01S2301/176

摘要： A bi-section type GaN-based semiconductor laser device that has a configuration and a structure in which damage is less likely to be caused in a region in a saturable absorption region that faces a first light emission region is provided. The semiconductor laser device includes a first light emission region, a second light emission region, a saturable absorption region sandwiched by the foregoing light emission regions, a first electrode, and a second electrode. Laser light is emitted from an end face on a second light emission region side thereof. The second electrode is configured of a first portion, a second portion, and a third portion. 1

摘要翻译： 提供了一种双截面型GaN基半导体激光器件，其具有在面向第一发光区域的可饱和吸收区域中不太可能引起损伤的构造和结构。 半导体激光装置包括第一发光区域，第二发光区域，被上述发光区域夹持的可饱和吸收区域，第一电极和第二电极。 激光从其第二发光区域侧的端面发射。 第二电极由第一部分，第二部分和第三部分构成。 1

公开(公告)号：US09001860B2

公开(公告)日：2015-04-07

申请号：US13310260

申请日：2011-12-02

申请人： Tomoyuki Oki ,  Hideki Watanabe ,  Rintaro Koda ,  Masaru Kuramoto ,  Hiroyuki Yokoyama

发明人： Tomoyuki Oki ,  Hideki Watanabe ,  Rintaro Koda ,  Masaru Kuramoto ,  Hiroyuki Yokoyama

IPC分类号： H01S5/323 ,  H01S5/343 ,  B82Y20/00 ,  H01S5/0625 ,  H01S5/065 ,  H01S5/10 ,  H01S5/14 ,  H01S5/22

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/06253 ,  H01S5/0658 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/141 ,  H01S5/22

摘要： A laser diode device includes a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer that has a light emitting region and a saturable absorption region, and a second compound semiconductor layer are sequentially layered, a second electrode, and a first electrode. The laminated structure has ridge stripe structure. The second electrode is separated into a first section to obtain forward bias state by applying a direct current to the first electrode through the light emitting region and a second section to add electric field to the saturable absorption region by an isolation trench. When minimum width of the ridge stripe structure is WMIN, and width of the ridge stripe structure of the second section of the second electrode in an interface between the second section of the second electrode and the isolation trench is W2, 1

摘要翻译： 激光二极管装置包括其中依次层叠有第一化合物半导体层，具有发光区域和可饱和吸收区域的第三化合物半导体层和第二化合物半导体层的层叠结构，第二电极和第一 电极。 层叠结构具有脊状结构。 将第二电极分离为第一部分，以通过通过发光区域向第一电极施加直流电流以及通过隔离沟槽向可饱和吸收区域加电场的第二部分来获得正向偏置状态。 当脊条纹结构的最小宽度为WMIN时，第二电极的第二部分与隔离沟槽之间的界面中的第二电极的第二部分的脊状条纹结构的宽度为W2，1

公开(公告)号：US08290009B2

公开(公告)日：2012-10-16

申请号：US12458962

申请日：2009-07-28

申请人： Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Osamu Maeda ,  Tomoyuki Oki ,  Naoki Jogan

发明人： Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Osamu Maeda ,  Tomoyuki Oki ,  Naoki Jogan

IPC分类号： H01S5/00

CPC分类号： H01S5/18336 ,  H01S5/0655 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18358 ,  H01S2301/166

摘要： A vertical cavity surface emitting laser includes a layer-stack structure including, on a substrate, a transverse-mode adjustment layer, a first multilayer reflecting mirror, an active layer having a light emission region, and a second multilayer reflecting mirror in order from the substrate side, and including a current confinement layer in which a current injection region is formed in a region corresponding to the light emission region in the first multilayer reflecting mirror, between the first multilayer reflecting mirror and the active layer, between the active layer and the second multilayer reflecting mirror, or in the second multilayer reflecting mirror. In the transverse-mode adjustment layer, reflectance at an oscillation wavelength in the region opposite to a center of the light emission region is higher than that at an oscillation wavelength in the region opposite to an outer edge of the light emission region.

摘要翻译： 垂直腔表面发射激光器包括层叠结构，其包括在基板上的横向模式调整层，第一多层反射镜，具有发光区域的有源层和第二多层反射镜，从 并且包括电流限制层，其中在与第一多层反射镜中的发光区域对应的区域中在第一多层反射镜和有源层之间形成电流注入区域，在有源层和 第二多层反射镜，或第二多层反射镜。 在横模调整层中，与发光区域的中心相反的区域的振荡波长的反射率高于与发光区域的外缘相反的区域的振荡波长的反射率。