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47 条记录 (耗时 0.026 秒)

    METHODS FOR FORMING A DOPED AMORPHOUS SILICON OXIDE LAYER FOR SOLAR CELL DEVICES
    12.
    发明申请
    METHODS FOR FORMING A DOPED AMORPHOUS SILICON OXIDE LAYER FOR SOLAR CELL DEVICES 审中-公开
    用于形成用于太阳能电池装置的掺杂的非晶硅氧化物层的方法

    公开(公告)号：US20130112264A1

    公开(公告)日：2013-05-09

    申请号：US13291288

    申请日：2011-11-08

    申请人： Dapeng Wang ,  Yong Kee Chae

    发明人： Dapeng Wang ,  Yong Kee Chae

    IPC分类号： H01L31/0376 ,  H01L21/20

    CPC分类号： H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/03762 ,  H01L31/076 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

    摘要： Embodiments of the present invention relate to methods for forming a doped amorphous silicon oxide layer utilized in thin film solar cells. In one embodiment, a method for forming a doped p-type amorphous silicon containing layer on a substrate includes providing a substrate in a processing chamber, supplying a gas mixture having a hydrogen-based gas, a silicon-based gas and a carbon and oxygen containing gas into the processing chamber, the gas mixture having a volumetric flow ratio of the hydrogen-based gas to the silicon-based gas between about 5 and about 15, wherein a volumetric flow ratio of the carbon and oxygen containing gas to the total combined flow of hydrogen-based gas and the silicon-based gas is between about 10 percent and about 50 percent; and maintaining a process pressure of the gas mixture within the processing chamber at between about 1 Torr and about 10 Torr while forming a doped p-type amorphous silicon containing layer.

    摘要翻译： 本发明的实施例涉及用于形成薄膜太阳能电池中使用的掺杂的非晶氧化硅层的方法。 在一个实施例中，在衬底上形成掺杂的p型非晶硅层的方法包括在处理室中提供衬底，提供具有氢基气体，硅基气体和碳和氧的气体混合物 所述气体混合物具有约5至约15的所述氢基气体与所述硅基气体的体积流量比，其中所述含碳和含氧气体的体积流量比与所述总体组合 氢基气体和硅基气体的流动在约10％至约50％之间; 以及在处理室内的气体混合物的处理压力保持在约1托和约10托之间，同时形成掺杂的p型非晶硅含硅层。

    Gas mixing method realized by back diffusion in a PECVD system with showerhead
    14.
    发明授权
    Gas mixing method realized by back diffusion in a PECVD system with showerhead 有权
    在具有喷头的PECVD系统中通过反向扩散实现的气体混合方法

    公开(公告)号：US08026157B2

    公开(公告)日：2011-09-27

    申请号：US12553007

    申请日：2009-09-02

    申请人： Xiesen Yang ,  Yong-Kee Chae ,  Shuran Sheng ,  Liwei Li

    发明人： Xiesen Yang ,  Yong-Kee Chae ,  Shuran Sheng ,  Liwei Li

    IPC分类号： H01L21/205 ,  H05H1/24

    CPC分类号： H01L21/0262 ,  C23C16/24 ,  C23C16/452 ,  C23C16/45512 ,  C23C16/45565 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/02532 ,  H01L21/02595

    摘要： Embodiments of the present invention generally relate to methods of forming a microcrystalline silicon layer on a substrate in a deposition chamber. In, one embodiment, the method includes flowing a processing gas into a diffuser region between a backing plate and a showerhead of the deposition chamber, flowing the processing gas through a plurality of holes in the showerhead and into a process volume between the showerhead and a substrate support in the deposition chamber, igniting a plasma in the process volume, back-flowing gas ions formed in the plasma through the plurality of holes in the showerhead and into the diffuser region, mixing the gas ions and the processing gas in the diffuser region, re-flowing the gas ions and processing gas through the plurality of holes in the showerhead and into the process volume, and depositing a microcrystalline silicon layer on the substrate.

    摘要翻译： 本发明的实施方案一般涉及在沉积室中的衬底上形成微晶硅层的方法。 在一个实施例中，该方法包括使处理气体流动到沉积室的背板和喷头之间的扩散器区域中，使处理气体流过喷头中的多个孔并进入喷淋头和喷头之间的处理容积 在沉积室中的基板支撑件，点燃处理体积中的等离子体，在等离子体中形成的回流气体离子通过喷头中的多个孔并进入扩散器区域，将气体离子和处理气体混合在扩散器区域 使气体离子和处理气体再次流过喷头中的多个孔并进入处理体积，并在基底上沉积微晶硅层。

    MICROCRYSTALLINE SILICON ALLOYS FOR THIN FILM AND WAFER BASED SOLAR APPLICATIONS
    16.
    发明申请
    MICROCRYSTALLINE SILICON ALLOYS FOR THIN FILM AND WAFER BASED SOLAR APPLICATIONS 审中-公开
    薄膜和薄膜太阳能应用的微晶硅合金

    公开(公告)号：US20100059110A1

    公开(公告)日：2010-03-11

    申请号：US12208478

    申请日：2008-09-11

    申请人： Shuran Sheng ,  Yong-Kee Chae

    发明人： Shuran Sheng ,  Yong-Kee Chae

    IPC分类号： H01L31/00 ,  H01L21/00

    CPC分类号： C23C16/5096 ,  C23C16/325 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

    摘要： A method and apparatus for forming solar cells is provided. Doped crystalline semiconductor alloys including carbon, oxygen, and nitrogen are used as charge collection layers for thin-film solar cells. The semiconductor alloy layers are formed by providing semiconductor source compound and a co-component source compound to a processing chamber and ionizing the gases to deposit a layer on a substrate. The alloy layers provide improved control of refractive index, wide optical bandgap, high conductivity, and resistance to attack by oxygen.

    摘要翻译： 提供一种用于形成太阳能电池的方法和装置。 包括碳，氧和氮的掺杂结晶半导体合金被用作薄膜太阳能电池的电荷收集层。 半导体合金层通过向处理室提供半导体源化合物和共组分源化合物形成，并使气体离子化以在衬底上沉积一层。 合金层提供了改进的折射率控制，宽的光学带隙，高导电性和抗氧化性。

    METHOD OF DYNAMIC TEMPERATURE CONTROL DURING MICROCRYSTALLINE SI GROWTH
    19.
    发明申请
    METHOD OF DYNAMIC TEMPERATURE CONTROL DURING MICROCRYSTALLINE SI GROWTH 失效
    微晶玻璃生长过程中动态温度控制方法

    公开(公告)号：US20090105873A1

    公开(公告)日：2009-04-23

    申请号：US11876130

    申请日：2007-10-22

    申请人： YONG KEE CHAE ,  SOO YOUNG CHOI

    发明人： YONG KEE CHAE ,  SOO YOUNG CHOI

    IPC分类号： G06F19/00 ,  C23C16/24 ,  H01L31/00

    CPC分类号： H01L31/1824 ,  C23C16/24 ,  C23C16/46 ,  Y02E10/545 ,  Y02P70/521

    摘要： The present invention generally comprises a method for dynamically controlling the temperature of a solar cell substrate during microcrystalline silicon deposition. In amorphous silicon/microcrystalline tandem solar cells, microcrystalline silicon may be deposited using a higher power density and to a greater thickness than amorphous silicon. The higher the power density applied, the faster the deposition may occur, but the temperature of the deposition may also increase. At high temperatures, the likelihood of dopant diffusing into the intrinsic layer of the solar cell and damaging the cell is greater. By dynamically controlling the temperature of the susceptor, the substrate and hence, the dopant can be maintained at a substantially constant temperature below the value at which the dopant may diffuse into the intrinsic layer. The dynamic temperature control permits the microcrystalline silicon to be deposited at a high power density without damaging the solar cell.

    摘要翻译： 本发明通常包括在微晶硅沉积期间动态地控制太阳能电池基板的温度的方法。 在非晶硅/微晶串联太阳能电池中，可以使用比非晶硅更高的功率密度和更大的厚度来沉积微晶硅。 施加的功率密度越高，沉积可能发生的越快，但沉积的温度也可能增加。 在高温下，掺杂剂扩散到太阳能电池的本征层并损坏电池的可能性更大。 通过动态地控制基座的温度，衬底和因此掺杂剂可以保持在低于掺杂剂可以扩散到本征层的值的基本上恒定的温度。 动态温度控制允许以高功率密度沉积微晶硅而不损坏太阳能电池。