公开(公告)号：US09379733B1

公开(公告)日：2016-06-28

申请号：US14794722

申请日：2015-07-08

Applicant: mCube, Inc.

Inventor： Te-Hsi Terrence Lee

IPC: H03M3/00 ,  H03H9/24 ,  G01C19/5776

CPC classification number: H03M3/30 ,  G01C19/5776 ,  G01P15/097 ,  H03H9/2426

Abstract: A Synchronous Modulation Resonator (SMR) device, the device includes a resonator having coupled to a Vd source and a Vr source, wherein the Vd is DC biased, wherein the Vr is AC, wherein the resonator provides a resonator output in response to Vd and Vr, a Sigma Delta Modulator (SDM) coupled to the resonator and to the Vr source, wherein the SDM provides a signal output in response to the resonator output and to the Vr, and a digital output block coupled to the SDM, wherein the digital output block is configured to provide a digital signal representation of the resonator output, in response to the signal output.

Abstract translation: 一种同步调制谐振器（SMR）器件，该器件包括耦合到Vd源和Vr源的谐振器，其中Vd是DC偏置的，其中Vr是AC，其中谐振器提供响应于Vd的谐振器输出和 Vr，耦合到谐振器和Vr源的Sigma Delta调制器（SDM），其中SDM响应于谐振器输出和Vr而提供信号输出，以及耦合到SDM的数字输出块，其中数字 输出块被配置为响应于信号输出提供谐振器输出的数字信号表示。

公开(公告)号：US20160052777A1

公开(公告)日：2016-02-25

申请号：US14930642

申请日：2015-11-02

Applicant: mCube Inc.

Inventor： TE-HSI "TERRENCE" LEE ,  SUDHEER S. SRIDHARAMURTHY ,  SHINGO YONEOKA ,  WENHUA ZHANG

IPC: B81B7/00

CPC classification number: B81B7/0022 ,  B81B3/0086 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2207/11 ,  B81C1/00246 ,  B81C1/0038 ,  B81C1/00531 ,  B81C1/00801 ,  B81C2201/053

Abstract: An integrated circuit includes a substrate member having a surface region and a CMOS IC layer overlying the surface region. The CMOS IC layer has at least one CMOS device. The integrated circuit also includes a bottom isolation layer overlying the CMOS IC layer, a shielding layer overlying a portion of the bottom isolation layer, and a top isolation layer overlying a portion of the bottom isolation layer. The bottom isolation layer includes an isolation region between the top isolation layer and the shielding layer. The integrated circuit also has a MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer. The MEMS layer includes at least one MEMS structure having at least one movable structure and at least one anchored structure. The at least one anchored structure is coupled to a portion of the top isolation layer, and the at least one movable structure overlies the shielding layer.

Abstract translation: 集成电路包括具有表面区域的衬底构件和覆盖在表面区域上的CMOS IC层。 CMOS IC层具有至少一个CMOS器件。 集成电路还包括覆盖CMOS IC层的底部隔离层，覆盖在底部隔离层的一部分上的屏蔽层和覆盖在底部隔离层的一部分上的顶部隔离层。 底部隔离层包括顶部隔离层和屏蔽层之间的隔离区域。 集成电路还具有覆盖顶部隔离层，屏蔽层和底部隔离层的MEMS层。 MEMS层包括具有至少一个可移动结构和至少一个锚定结构的至少一个MEMS结构。 所述至少一个锚定结构耦合到所述顶部隔离层的一部分，并且所述至少一个可移动结构覆盖所述屏蔽层。

公开(公告)号：US20160039666A1

公开(公告)日：2016-02-11

申请号：US14887631

申请日：2015-10-20

Applicant: mCube Inc.

Inventor： WENHUA ZHANG ,  Shingo Yoneoka

IPC: B81B7/02 ,  B81B7/00

CPC classification number: B81B7/02 ,  B81B7/0041 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0292 ,  B81C1/00293 ,  B81C1/00333 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0154 ,  H01L21/56 ,  H01L41/1132

Abstract: A semiconductor device having multiple MEMS (micro-electro mechanical system) devices includes a semiconductor substrate having a first MEMS device and a second MEMS device, and an encapsulation substrate having a top portion and sidewalls forming a first cavity and a second cavity. The encapsulation substrate is bonded to the semiconductor substrate at the sidewalls to encapsulate the first MEMS device in the first cavity and to encapsulate the second MEMS device in the second cavity. The second cavity includes at least one access channel at a recessed region in a sidewall of the encapsulation substrate adjacent to an interface between the encapsulation substrate and the semiconductor substrate. The access channel is covered by a thin film. The first cavity is at a first atmospheric pressure and the second cavity is at a second atmospheric pressure. The second air pressure is different from the first air pressure.

Abstract translation: 具有多个MEMS（微电子机械系统）器件的半导体器件包括具有第一MEMS器件和第二MEMS器件的半导体衬底，以及具有形成第一腔和第二腔的顶部和侧壁的封装衬底。 封装衬底在侧壁处结合到半导体衬底以将第一MEMS器件封装在第一腔中并将第二MEMS器件封装在第二腔中。 第二腔包括在封装衬底的侧壁中的与封装衬底和半导体衬底之间的界面相邻的凹陷区域处的至少一个存取通道。 通道被薄膜覆盖。 第一空腔处于第一大气压，第二空腔处于第二大气压。 第二空气压力与第一气压不同。

公开(公告)号：US09249012B2

公开(公告)日：2016-02-02

申请号：US14521441

申请日：2014-10-22

Applicant: mCube Inc.

Inventor： Te-Hsi “Terrence” Lee

IPC: H01L21/30 ,  B81C1/00 ,  B81C99/00

CPC classification number: B81B7/0041 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00198 ,  B81C1/00269 ,  B81C1/00293 ,  B81C99/004

Abstract: A method for fabricating an integrated MEMS device and the resulting structure therefore. A control process monitor comprising a MEMS membrane cover can be provided within an integrated CMOS-MEMS package to monitor package leaking or outgassing. The MEMS membrane cover can separate an upper cavity region subject to leaking from a lower cavity subject to outgassing. Differential changes in pressure between these cavities can be detecting by monitoring the deflection of the membrane cover via a plurality of displacement sensors. An integrated MEMS device can be fabricated with a first and second MEMS device configured with a first and second MEMS cavity, respectively. The separate cavities can be formed via etching a capping structure to configure each cavity with a separate cavity volume. By utilizing an outgassing characteristic of a CMOS layer within the integrated MEMS device, the first and second MEMS cavities can be configured with different cavity pressures.

Abstract translation: 因此，制造集成MEMS器件的方法及其结果。 可以在集成的CMOS-MEMS封装内提供包括MEMS膜覆盖物的控制过程监视器，以监测封装泄漏或除气。 MEMS膜罩可以分隔上部空腔区域，以使其经受脱气的下腔体泄漏。 可以通过经由多个位移传感器监测膜盖的挠曲来检测这些空腔之间的压差的差异变化。 可以分别用配置有第一和第二MEMS腔的第一和第二MEMS器件来制造集成的MEMS器件。 可以通过蚀刻封盖结构来形成单独的空腔，以使每个空腔具有单独的空腔体积。 通过利用集成MEMS器件内的CMOS层的除气特性，第一和第二MEMS空腔可被配置为具有不同的腔压力。

公开(公告)号：US20150268025A1

公开(公告)日：2015-09-24

申请号：US14194468

申请日：2014-02-28

Applicant: mCube Inc.

Inventor： KEVIN HUANG ,  Chenglong Fu ,  Tan Liang

IPC: G01B5/004 ,  G01P15/00 ,  G01C19/00 ,  H04M1/02 ,  H04M1/725

CPC classification number: G01P15/00 ,  G01P15/18 ,  G06F3/017 ,  G06F3/0346 ,  H04M1/72569 ,  H04M2250/22

Abstract: A portable proximity device and method of operation thereof. The method for proximity detection implemented on a portable device can include determining an initial perturbation data, a tracking point data, and a stable position data with a physical sensor of the portable device. The initial perturbation data can include previous state data and current state data. The tracking point data can include one or more track data. An action to be performed can be determined, by a processor within the portable device, based on the initial perturbation data, the tracking point data, and the stable position data. The portable proximity device can include a physical sensor and a processor configured to perform these steps.

Abstract translation: 便携式接近装置及其操作方法。 在便携式设备上实现的用于接近检测的方法可以包括利用便携式设备的物理传感器确定初始扰动数据，跟踪点数据和稳定位置数据。 初始扰动数据可以包括先前的状态数据和当前状态数据。 跟踪点数据可以包括一个或多个轨道数据。 可以由便携式设备内的处理器基于初始扰动数据，跟踪点数据和稳定位置数据来确定要执行的动作。 便携式接近装置可以包括物理传感器和被配置为执行这些步骤的处理器。

公开(公告)号：US09075079B2

公开(公告)日：2015-07-07

申请号：US14297337

申请日：2014-06-05

Applicant: mCube Inc.

Inventor： Shingo Yoneoka ,  Sudheer Sridharamurthy ,  Wenhua Zhang ,  Te-Hsi Terrence Lee

IPC: G01P15/13 ,  G01C19/5762 ,  G01C19/5719 ,  G01P15/125 ,  G01P15/08 ,  G01C19/5712

CPC classification number: G01P15/131 ,  G01C19/5712 ,  G01C19/5719 ,  G01C19/5762 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/084 ,  G01P2015/0865

Abstract: An integrated MEMS inertial sensor device. The device includes a MEMS inertial sensor overlying a CMOS substrate. The MEMS inertial sensor includes a drive frame coupled to the surface region via at least one drive spring, a sense mass coupled to the drive frame via at least a sense spring, and a sense electrode disposed underlying the sense mass. The device also includes at least one pair of quadrature cancellation electrodes disposed within a vicinity of the sense electrode, wherein each pair includes an N-electrode and a P-electrode.

Abstract translation: 集成的MEMS惯性传感器装置。 该器件包括覆盖CMOS衬底的MEMS惯性传感器。 MEMS惯性传感器包括经由至少一个驱动弹簧耦合到表面区域的驱动框架，经由至少一个感测弹簧耦合到驱动框架的感测质量块和设置在感测质量块下方的感测电极。 该装置还包括设置在感测电极附近的至少一对正交消除电极，其中每对包括N电极和P电极。

公开(公告)号：US20130134599A1

公开(公告)日：2013-05-30

申请号：US13751014

申请日：2013-01-25

Applicant: MCube Inc.

Inventor： XIAO (CHARLES) YANG

IPC: H01L23/488

CPC classification number: H01L23/488 ,  B81B2207/015 ,  B81B2207/098 ,  B81C1/00246 ,  H01L24/03 ,  H01L24/05 ,  H01L29/0657 ,  H01L2224/0556 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10155 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A monolithic integrated electronic device includes a substrate having a surface region and one or more integrated micro electro-mechanical systems and electronic devices provided on a first region overlying the surface region. Each of the integrated micro electro-mechanical systems and electronic devices has one or more contact regions. The first region has a first surface region. One or more trench structures are disposed within one or more portions of the first region. A passivation material overlies the first region and the one or more trench structures. A conduction material overlies the passivation material, the one or more trench structures, and one or more of the contact regions. The device also has one or more edge bond pad structures within a vicinity of the one or more bond pad structures, which are formed by a singulation process within a vicinity of the one or more bond pad structures.

Abstract translation: 单片集成电子设备包括具有表面区域的基板和设置在覆盖表面区域的第一区域上的一个或多个集成微电子机械系统和电子设备。 集成微电子机械系统和电子设备中的每一个具有一个或多个接触区域。 第一区域具有第一表面区域。 一个或多个沟槽结构设置在第一区域的一个或多个部分内。 钝化材料覆盖在第一区域和一个或多个沟槽结构之间。 导电材料覆盖钝化材料，一个或多个沟槽结构以及一个或多个接触区域。 该装置还在一个或多个接合焊盘结构的附近具有一个或多个边缘焊接结构，其通过在一个或多个接合焊盘结构附近的单一化工艺形成。

公开(公告)号：US10267636B1

公开(公告)日：2019-04-23

申请号：US14987685

申请日：2016-01-04

Applicant: mCube, Inc.

Inventor： Sudheer S. Sridharamurthy ,  Tony Maraldo ,  Zheng-Yao Sun ,  Wenhua Zhang ,  Te-Hsi Terrence Lee ,  Sanjay Bhandari ,  Joseph Rastegar

IPC: G01C19/5684 ,  B81C99/00

Abstract: A method for a MEMS device comprises determining in a computer system, a first driving signal for the MEMS device in response to a first time delay and to a base driving signal, applying the first driving signal to the MEMS device to induce the MEMS device to operate at a first frequency, determining a second driving signal for the MEMS device in response to a second time delay and to the base driving signal, applying the second driving signal to the MEMS device to induce the MEMS device to operate at a second frequency, determining a first quality factor associated with the MEMS device in response to the first frequency and the second frequency, determining a quality factor associated with the MEMS device in response to the first quality factor, and determining whether the quality factor associated with the MEMS device, exceeds a threshold quality factor.

公开(公告)号：US10183860B2

公开(公告)日：2019-01-22

申请号：US14887622

申请日：2015-10-20

Applicant: mCube Inc.

Inventor： Wenhua Zhang ,  Shingo Yoneoka

IPC: B81B7/02 ,  B81C1/00 ,  B81B7/00 ,  H01L21/56 ,  H01L41/113

Abstract: A method for fabricating a multiple MEMS device includes providing a semiconductor substrate having a first and second MEMS device, and an encapsulation wafer with a first cavity and a second cavity, which includes at least one channel. The first MEMS is encapsulated within the first cavity and the second MEMS device is encapsulated within the second cavity. These devices is encapsulated within a first encapsulation environment at a first air pressure, and encapsulating the first MEMS device within the first cavity at the first air pressure. The second MEMS device within the second cavity is then subjected to a second encapsulating environment at a second air pressure via the channel of the second cavity.

公开(公告)号：US10132630B2

公开(公告)日：2018-11-20

申请号：US14162718

申请日：2014-01-23

Applicant: mCube Inc.

Inventor： Terrence Lee ,  Wenhua Zhang ,  Sudheer Sridharamurthy ,  Shingo Yoneoka

IPC: G01C19/5783 ,  G01C19/56 ,  G01P1/00 ,  B81B7/00 ,  G01P15/18 ,  G01P15/02 ,  G01P15/08

Abstract: A multi-axis integrated MEMS inertial sensor device. The device can include an integrated 3-axis gyroscope and 3-axis accelerometer on a single chip, creating a 6-axis inertial sensor device. The structure is spatially configured with efficient use of the design area of the chip by adding the accelerometer device to the center of the gyroscope device. The design architecture can be a rectangular or square shape in geometry, which makes use of the whole chip area and maximizes the sensor size in a defined area. The MEMS is centered in the package, which is beneficial to the sensor's temperature performance. Furthermore, the electrical bonding pads of the integrated multi-axis inertial sensor device can be configured in the four corners of the rectangular chip layout. This configuration guarantees design symmetry and efficient use of the chip area.