公开(公告)号：US20130196516A1

公开(公告)日：2013-08-01

申请号：US13472282

申请日：2012-05-15

申请人： Adrien Lavoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

发明人： Adrien Lavoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

IPC分类号： H01L21/318

CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228

摘要： Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.

摘要翻译： 描述了在衬底上制备包括含碳和/或含氧膜如SiCN（也称为SiNC），SiON和SiONC膜的氮化硅（SiN）材料和其它含硅膜的方法。 根据各种实施方案，所述方法涉及一种或多种反应物的电磁辐射辅助活化。 在某些实施方案中，例如，该方法涉及蒸气相胺共反应物的紫外（UV）活化。 该方法可用于在低于约400℃的温度下沉积含硅膜，包括SiN和SiCN膜。

公开(公告)号：US20140051262A9

公开(公告)日：2014-02-20

申请号：US13472282

申请日：2012-05-15

申请人： Adrien Lavoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

发明人： Adrien Lavoie ,  Bhadri Varadarajan ,  Jon Henri ,  Dennis Hausmann

IPC分类号： H01L21/318

CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0228

摘要： Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.

摘要翻译： 描述了在衬底上制备包括含碳和/或含氧膜如SiCN（也称为SiNC），SiON和SiONC膜的氮化硅（SiN）材料和其它含硅膜的方法。 根据各种实施方案，所述方法涉及一种或多种反应物的电磁辐射辅助活化。 在某些实施方案中，例如，该方法涉及蒸气相胺共反应物的紫外（UV）活化。 该方法可用于在低于约400℃的温度下沉积含硅膜，包括SiN和SiCN膜。

公开(公告)号：US09034142B2

公开(公告)日：2015-05-19

申请号：US12642497

申请日：2009-12-18

申请人： Christopher M. Bartlett ,  Ming Li ,  Jon Henri ,  Marshall R. Stowell ,  Mohammed Sabri

发明人： Christopher M. Bartlett ,  Ming Li ,  Jon Henri ,  Marshall R. Stowell ,  Mohammed Sabri

IPC分类号： C23C16/52 ,  H01L21/306 ,  C23C16/455 ,  C23C16/44

CPC分类号： C23C16/52 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/458 ,  C23C16/46

摘要： A temperature controlled showerhead assembly for chemical vapor deposition (CVD) chambers enhances heat dissipation to provide accurate temperature control of the showerhead face plate and maintain temperatures substantially lower than surrounding components. Heat dissipates by conduction through a showerhead stem and removed by the heat exchanger mounted outside of the vacuum environment. Heat is supplied by a heating element inserted into the steam of the showerhead. Temperature is controlled using feedback supplied by a temperature sensor installed in the stem and in thermal contact with the face plate.

摘要翻译： 用于化学气相沉积（CVD）室的温度控制喷淋头组件增强散热以提供喷头面板的精确的温度控制并保持温度显着低于周围部件。 热量通过喷淋头传导并通过安装在真空环境外的热交换器除去。 热量由插入淋浴头蒸汽的加热元件提供。 使用由安装在杆上的温度传感器提供的反馈并与面板进行热接触来控制温度。

公开(公告)号：US20110146571A1

公开(公告)日：2011-06-23

申请号：US12642497

申请日：2009-12-18

申请人： Christopher M. Bartlett ,  Ming Li ,  Jon Henri ,  Marshall R. Stowell ,  Mohammed Sabri

发明人： Christopher M. Bartlett ,  Ming Li ,  Jon Henri ,  Marshall R. Stowell ,  Mohammed Sabri

IPC分类号： C23C16/52 ,  C23C16/00

CPC分类号： C23C16/52 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/458 ,  C23C16/46

摘要： A temperature controlled showerhead assembly for chemical vapor deposition (CVD) chambers enhances heat dissipation to provide accurate temperature control of the showerhead face plate and maintain temperatures substantially lower than surrounding components. Heat dissipates by conduction through a showerhead stem and removed by the heat exchanger mounted outside of the vacuum environment. Heat is supplied by a heating element inserted into the steam of the showerhead. Temperature is controlled using feedback supplied by a temperature sensor installed in the stem and in thermal contact with the face plate.

摘要翻译： 用于化学气相沉积（CVD）室的温度控制喷淋头组件增强散热以提供喷头面板的精确的温度控制并保持温度显着低于周围部件。 热量通过喷淋头传导并通过安装在真空环境外的热交换器除去。 热量由插入淋浴头蒸汽的加热元件提供。 使用由安装在杆上的温度传感器提供的反馈并与面板进行热接触来控制温度。

公开(公告)号：US07981810B1

公开(公告)日：2011-07-19

申请号：US11449983

申请日：2006-06-08

申请人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

发明人： Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri

IPC分类号： H01L21/31

CPC分类号： H01L21/3146 ,  C23C16/26 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/31144

摘要： The present invention addresses this need by providing a method for forming transparent PECVD deposited ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers. Methods of the invention involve depositing the AHM using dilute hydrocarbon precursor gas flows and/or low process temperatures. The AHMs produced are transparent (having absorption coefficients of less than 0.1 in certain embodiments). The AHMs also have the property of high selectivity of the hard mask film to the underlying layers for successful integration of the film, and are suitable for use with 193 nm generation and below lithography schemes wherein high selectivity of the hard mask to the underlying layers is required. The lower temperature process also allows reduction of the overall thermal budget for a wafer.

摘要翻译： 本发明通过提供一种用于形成对下层具有高等离子体蚀刻选择性的透明PECVD沉积可吸入硬掩模（AHM）的方法来满足这一需要。 本发明的方法包括使用稀烃前体气流和/或低工艺温度沉积AHM。 所生产的AHM是透明的（在某些实施方案中吸收系数小于0.1）。 AHM还具有硬掩模膜对下层的高选择性，成功地将薄膜整合的性质，并且适用于193nm生成和低于光刻方案的应用，其中硬掩模对下层的高选择性为 需要。 较低的温度过程还可以降低晶片的整体热预算。

公开(公告)号：US07981777B1

公开(公告)日：2011-07-19

申请号：US11710377

申请日：2007-02-22

申请人： Pramod Subramonium ,  Yongsik Yu ,  Zhiyuan Fang ,  Jon Henri

发明人： Pramod Subramonium ,  Yongsik Yu ,  Zhiyuan Fang ,  Jon Henri

IPC分类号： H01L21/00

CPC分类号： H01L21/0332 ,  C23C16/26 ,  C23C16/509 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/3146

摘要： The present invention provides PECVD methods for forming stable and hermetic ashable hard masks (AHMs). The methods involve depositing AHMs using dilute hydrocarbon precursor gas flows and/or high LFRF/HFRF ratios. In certain embodiments, the AHMs are transparent and have high etch selectivities. Single and dual layer hermetic AHM stacks are also provided. According to various embodiments, the dual layer stack includes an underlying AHM layer having tunable optical properties and a hermetic cap layer.

摘要翻译： 本发明提供了用于形成稳定和密封的可嚼硬掩模（AHM）的PECVD方法。 这些方法涉及使用稀烃前体气体流和/或高LFRF / HFRF比来沉积AHM。 在某些实施方案中，AHM是透明的并且具有高蚀刻选择性。 还提供单层和双层密封AHM堆叠。 根据各种实施例，双层堆叠包括具有可调光学特性的底层AHM层和密封盖层。

公开(公告)号：US06821407B1

公开(公告)日：2004-11-23

申请号：US10231147

申请日：2002-08-27

申请人： Jonathan D. Reid ,  Timothy Mark Archer ,  Thomas Tan Vu ,  Seshasayee Varadarajan ,  Jon Henri ,  Steven T. Mayer ,  David Sauer ,  Anita Kang ,  Gerald Feldewerth

发明人： Jonathan D. Reid ,  Timothy Mark Archer ,  Thomas Tan Vu ,  Seshasayee Varadarajan ,  Jon Henri ,  Steven T. Mayer ,  David Sauer ,  Anita Kang ,  Gerald Feldewerth

IPC分类号： C25D338

CPC分类号： C25D21/12 ,  C25D17/002 ,  C25D17/12 ,  C25F7/00 ,  H05K3/241

摘要： An electroplating system includes (a) a phosphorized anode having an average grain size of at least about 50 micrometers and (b) plating apparatus that separates the anode from the cathode and prevents most particles generated at the anode from passing to the cathode. The separation may be accomplished by interposing a microporous chemical transport barrier between the anode and cathode. The relatively few particles that are generated at the large grain phosphorized copper anode are prevented from passing into the cathode (wafer) chamber area and thereby causing a defect in the part.

摘要翻译： 电镀系统包括（a）平均晶粒尺寸为至少约50微米的磷化阳极和（b）将阳极与阴极分离的电镀装置，并防止在阳极处产生的大多数颗粒通过阴极。 分离可以通过在阳极和阴极之间插入微孔化学传输阻挡层来实现。 在大晶粒磷化铜阳极处产生的相对较少的颗粒被阻止进入阴极（晶片）室区域，从而导致该部分的缺陷。

公开(公告)号：US08100081B1

公开(公告)日：2012-01-24

申请号：US11515346

申请日：2006-08-31

申请人： Jon Henri ,  Henner Meinhold ,  Christopher Gage ,  Dan Doble

发明人： Jon Henri ,  Henner Meinhold ,  Christopher Gage ,  Dan Doble

IPC分类号： C23C16/452 ,  C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01L21/02087 ,  C23F4/00 ,  H01J37/32385 ,  H01J37/32449 ,  H01L21/31138 ,  H01L21/6708

摘要： The present invention provides methods and apparatuses for removing unwanted film from the edge area of substrate using remotely-generated plasmas. Activated plasma species are directed to the edge of the substrate to contact and remove the unwanted film, while intrusion of the activated species to areas above the active circuit region (where the film is desired) is suppressed. In certain embodiments, intrusion of the activated species is suppressed by the use of a purge gas and/or the use of materials that promote recombination of plasma species. In particular embodiments, atomic oxygen is used to remove ashable films from the edge of semiconductor wafers.

摘要翻译： 本发明提供了使用远程产生的等离子体从衬底的边缘区域去除不想要的膜的方法和装置。 激活的等离子体物质被引导到基底的边缘以接触和去除不需要的膜，同时抑制活性物质侵入有源电路区域之上（其中需要膜）的区域。 在某些实施方案中，通过使用吹扫气体和/或促进等离子体物质重组的材料的使用来抑制活化物质的侵入。 在具体实施方案中，使用原子氧从半导体晶片的边缘去除可灰化膜。

公开(公告)号：US07915166B1

公开(公告)日：2011-03-29

申请号：US11710652

申请日：2007-02-22

申请人： Yongsik Yu ,  Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri ,  Elizabeth Apen ,  Dan Vitkavage

发明人： Yongsik Yu ,  Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri ,  Elizabeth Apen ,  Dan Vitkavage

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3212 ,  H01L21/02115 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/311 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76867

摘要： Films having high hermeticity and a low dielectric constant can be used as copper diffusion barrier films, etch stop films, CMP stop films and other hardmasks during IC fabrication. Hermetic films can protect the underlying layers, such as layers of metal and dielectric, from exposure to atmospheric moisture and oxygen, thereby preventing undesirable oxidation of metal surfaces and absorption of moisture by a dielectric. Specifically, a bi-layer film having a hermetic bottom layer composed of hydrogen doped carbon and a low dielectric constant (low-k) top layer composed of low-k silicon carbide (e.g., high carbon content hydrogen doped silicon carbide) can be employed. Such bi-layer film can be deposited by PECVD methods on a partially fabricated semiconductor substrate having exposed layers of dielectric and metal.

摘要翻译： 在IC制造过程中，可以使用具有高气密性和低介电常数的膜作为铜扩散阻挡膜，蚀刻停止膜，CMP阻挡膜和其它硬掩模。 密封膜可以保护下面的层，例如金属和电介质层，暴露于大气中的水分和氧气，从而防止金属表面的不期望的氧化和电介质吸收水分。 具体而言，可以使用具有由氢掺杂碳组成的气密底层和由低k碳化硅构成的低介电常数（低k）顶层的双层膜（例如，高碳含量氢掺杂碳化硅） 。 这种双层膜可以通过PECVD方法沉积在具有暴露的介电层和金属层的部分制造的半导体衬底上。

公开(公告)号：US07704894B1

公开(公告)日：2010-04-27

申请号：US11602564

申请日：2006-11-20

申请人： Jon Henri ,  Xingyuan Tang ,  Jason Tian ,  Kevin Gerber ,  Arul N. Dhas

发明人： Jon Henri ,  Xingyuan Tang ,  Jason Tian ,  Kevin Gerber ,  Arul N. Dhas

IPC分类号： H01L21/461

CPC分类号： C23C16/402 ,  C23C16/50 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612

摘要： This invention provides a high throughput PECVD process for depositing TEOS films in a multi-station sequential deposition chamber. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing small bin defects. The methods of the invention involve dedicating a first station for temperature soak while flowing purge gas. Stopping the flow of reactant gas and flowing the purge gas for station 1 eliminates TEOS condensation on a cold wafer surface and significantly reduces the number of defects in the film, particularly for short temperature soaks.

摘要翻译： 本发明提供了一种用于在多站顺序沉积室中沉积TEOS膜的高通量PECVD工艺。 这些方法显着减少了TEOS膜中的颗粒数量，从而消除或最小化了小槽缺陷。 本发明的方法涉及在吹扫气体的同时第一工作站进行温度浸泡。 停止反应气体的流动并流动站1的吹扫气体可消除冷晶片表面上的TEOS冷凝，并显着减少膜中缺陷的数量，特别是对于短温浸泡。