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20 条记录 (耗时 0.03 秒)

    Process for making optical INP devices
    13.
    发明授权
    Process for making optical INP devices 失效
    制造光学INP器件的过程

    公开(公告)号：US4617192A

    公开(公告)日：1986-10-14

    申请号：US707173

    申请日：1985-02-28

    申请人： Aland K. Chin ,  Shobha Singh ,  LeGrand G. V. Uitert ,  George J. Zydzik

    发明人： Aland K. Chin ,  Shobha Singh ,  LeGrand G. V. Uitert ,  George J. Zydzik

    IPC分类号： H01L21/316 ,  H01L31/0216 ,  H01L31/105 ,  H01L33/00 ,  H01L33/44 ,  B05D3/06 ,  B05D5/06

    CPC分类号： H01L33/44 ,  H01L21/02178 ,  H01L21/02269 ,  H01L21/31616 ,  H01L31/02161 ,  H01L31/105 ,  H01L33/0025

    摘要： The invention is a process for putting down coatings of aluminum oxide on optical surfaces using electron-beam deposition in an oxygen-enriched atmosphere. Particularly good results are obtained when oxygen is flowed over or directed at the surface to be coated. Such coatings have extremely low losses compared to many conventional optical coatings and are particularly useful for anti-reflection coatings on various devices. In particular, for optical devices with indium phosphide surfaces operating at wavelengths near 1.3 .mu.m, the optical properties of aluminum oxide coatings are near optimum for anti-reflection coatings and the thermal expansion characteristics are a close match to those of indium phosphide.

    摘要翻译： 本发明是在富氧气氛中使用电子束沉积将氧化铝涂层放在光学表面上的方法。 当氧气流过或指向待涂覆的表面时，可获得特别好的结果。 与许多常规光学涂层相比，这种涂层具有极低的损耗，并且特别适用于各种装置上的抗反射涂层。 特别地，对于磷化铟表面在1.3μm附近工作的光学器件，氧化铝涂层的光学性能对于抗反射涂层来说是接近最佳的，并且热膨胀特性与磷化铟接近。

    Passivated semiconductor surfaces
    17.
    发明授权
    Passivated semiconductor surfaces 失效
    钝化的半导体表面

    公开(公告)号：US08369371B1

    公开(公告)日：2013-02-05

    申请号：US13275839

    申请日：2011-10-18

    申请人： Aland K. Chin ,  Peter Chow

    发明人： Aland K. Chin ,  Peter Chow

    IPC分类号： H01S5/00

    CPC分类号： H01S5/0282 ,  H01S5/0202 ,  H01S5/22

    摘要： The method of these teachings includes processing a semiconductor structure forming an active waveguide of a semiconductor laser in an environment free of contamination in order to provide contamination free mirror facets at the ends of the active waveguide, and depositing a single crystal passivation layer comprised of a semiconductor whose bandgap exceeds that of the active layer and the waveguide layers and that does not form misfit dislocations with the laser diode semiconductor, the deposition occurring at a temperature at which the semiconductor structure does not degrade.

    摘要翻译： 这些教导的方法包括在无污染的环境中处理形成半导体激光器的有源波导的半导体结构，以在有源波导的端部提供无污染的镜面，以及沉积由 其带隙超过有源层和波导层的带隙，并且不会与激光二极管半导体形成失配位错，所以沉积发生在半导体结构不劣化的温度。

    Patterned Composite Structures and Methods of Making the Same
    18.
    发明申请
    Patterned Composite Structures and Methods of Making the Same 审中-公开
    图案复合结构及其制作方法

    公开(公告)号：US20100208431A1

    公开(公告)日：2010-08-19

    申请号：US12576978

    申请日：2009-10-09

    申请人： Matthew P. Dugas ,  Aland K. Chin

    发明人： Matthew P. Dugas ,  Aland K. Chin

    IPC分类号： H05K7/20 ,  F28F7/00

    CPC分类号： F28F13/18 ,  H01L23/3732 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01S5/02484 ,  H01L2924/00

    摘要： The present disclosure relates to a patterned surface composite structure. The structure includes a first material having a specific coefficient-of-thermal-expansion and a second material having a different coefficient-of-thermal-expansion. The first material can be patterned with specific features and the second material may be located between those features, thereby forming areas having a coefficient-of-thermal-expansion between that of the first and second materials. A thermally emissive device, such as a laser diode, may be attached to a surface of the patterned composite structure.

    摘要翻译： 本公开涉及图案化表面复合结构。 该结构包括具有特定的热膨胀系数的第一材料和具有不同的热膨胀系数的第二材料。 可以将第一材料图案化为特定特征，并且第二材料可以位于这些特征之间，从而形成具有第一和第二材料之间的热膨胀系数的区域。 诸如激光二极管的热发射器件可以附接到图案化复合结构的表面。

    Method of making p-i-n photodiodes
    20.
    发明授权
    Method of making p-i-n photodiodes 失效
    制造p-i-n光电二极管的方法

    公开(公告)号：US4477964A

    公开(公告)日：1984-10-23

    申请号：US538182

    申请日：1983-10-03

    申请人： Aland K. Chin ,  Bulusu V. Dutt

    发明人： Aland K. Chin ,  Bulusu V. Dutt

    IPC分类号： H01L31/0304 ,  H01L31/105 ,  H01L29/161 ,  H01L27/14 ,  H01L29/90

    CPC分类号： H01L31/0304 ,  H01L31/105 ,  Y02E10/544 ,  Y10S252/95 ,  Y10S438/914

    摘要： Photodiodes (10) are fabricated in a single step diffusion process which exploits the characteristic of certain acceptors to form an anomalous diffusion profile (VI) including shallow and deep fronts (VIa and b) joined by an upwardly concave segment (VIc). By performing this type of diffusion into a low-doped n.sup.- -type body (12) with a carrier concentration (VII) below that of the concave segment, a p.sup.+ --p.sup.- junction (15) is formed at the depth of the concave segment and a p.sup.- --n.sup.- junction (17) is formed at a greater depth. The zone (16) between the junctions is at least partially depleted and forms the active region of a p.sup.+ --p.sup.- --n.sup.- photodiode. Specifically described are InP:Cd photodiodes.

    摘要翻译： 光电二极管（10）以单步扩散工艺制造，其利用某些受体的特性形成包括通过向上凹的段（VIc）连接的浅和深的前部（VIa和b）的异常扩散分布（VI）。 通过将这种类型的扩散进行到具有低于凹形段的载流子浓度（VII）的低掺杂n型体（12）中，在凹部的深度处形成p + - - 结（15） 段和p-n-结（17）形成在更大的深度。 结之间的区域（16）至少部分耗尽并形成p + -p-n-光电二极管的有源区。 具体描述了InP：Cd光电二极管。