公开(公告)号：US11613812B2

公开(公告)日：2023-03-28

申请号：US17011853

申请日：2020-09-03

Applicant: Applied Materials, Inc.

Inventor： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Wenyoung Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik ,  Ganesh Balasubramanian

IPC: C23C16/52 ,  G01B11/06 ,  H01L21/687 ,  H01L21/67 ,  C23C16/509 ,  G01N21/55 ,  G01N21/65 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US10793954B2

公开(公告)日：2020-10-06

申请号：US15976468

申请日：2018-05-10

Applicant: Applied Materials, Inc.

Inventor： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Wenyoung Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik ,  Ganesh Balasubramanian

IPC: G01N21/00 ,  C23C16/52 ,  G01B11/06 ,  H01L21/687 ,  H01L21/67 ,  C23C16/509 ,  G01N21/55 ,  G01N21/65 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US10475644B2

公开(公告)日：2019-11-12

申请号：US15959646

申请日：2018-04-23

Applicant: Applied Materials, Inc.

Inventor： Xinhai Han ,  Nagarajan Rajagopalan ,  Sung Hyun Hong ,  Bok Hoen Kim ,  Mukund Srinivasan

IPC: H01L21/02 ,  H01L27/11556 ,  H01L27/11582

Abstract: A method is provided for forming a stack of film layers for use in 3D memory devices. The method starts with providing a substrate in a processing chamber of a deposition reactor. Then one or more process gases suitable for forming a dielectric layer are supplied into the processing chamber of the deposition reactor forming a dielectric layer on the substrate. Then one or more process gases suitable for forming a metallic layer are supplied into the processing chamber of the deposition reactor forming a metallic layer on the dielectric layer. Then one or more process gases suitable for forming a metallic nitride adhesion layer are supplied into the processing chamber of the deposition reactor forming a metallic nitride adhesion layer on the metallic layer. The sequence is then repeated to form a desired number of layers.

公开(公告)号：US10030306B2

公开(公告)日：2018-07-24

申请号：US14422148

申请日：2013-10-23

Applicant: Applied Materials, Inc.

Inventor： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Ganesh Balasubramanian ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik

IPC: G01N21/00 ,  C23C16/52 ,  G01B11/06 ,  H01L21/00 ,  H01L21/687 ,  H01L21/67 ,  C23C16/509 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  G01N21/55 ,  G01N21/65 ,  C23C16/455

Abstract: Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US09458537B2

公开(公告)日：2016-10-04

申请号：US14869371

申请日：2015-09-29

Applicant: Applied Materials, Inc.

Inventor： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Wenyoung Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik ,  Ganesh Balasubramanian

IPC: G01N21/00 ,  C23C16/52 ,  G01B11/06 ,  H01L21/00 ,  H01L21/687 ,  H01L21/67 ,  C23C16/509 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  G01N21/55 ,  G01N21/65 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US20150206757A1

公开(公告)日：2015-07-23

申请号：US14591609

申请日：2015-01-07

Applicant: Applied Materials, Inc.

Inventor： XINHAI HAN ,  Nagarajan Rajagopalan ,  Sung Hyun Hong ,  Bok Hoen Kim ,  Mukund Srinivasan

IPC: H01L21/28 ,  H01L27/115

CPC classification number: H01L21/02274 ,  H01L21/02164 ,  H01L27/11556 ,  H01L27/11582

Abstract: A method is provided for forming a stack of film layers for use in 3D memory devices. The method starts with providing a substrate in a processing chamber of a deposition reactor. Then one or more process gases suitable for forming a dielectric layer are supplied into the processing chamber of the deposition reactor forming a dielectric layer on the substrate. Then one or more process gases suitable for forming a metallic layer are supplied into the processing chamber of the deposition reactor forming a metallic layer on the dielectric layer. Then one or more process gases suitable for forming a metallic nitride adhesion layer are supplied into the processing chamber of the deposition reactor forming a metallic nitride adhesion layer on the metallic layer. The sequence is then repeated to form a desired number of layers.

Abstract translation: 提供了一种用于形成用于3D存储器件的薄膜层叠层的方法。 该方法开始于在沉积反应器的处理室中提供衬底。 然后将适合于形成电介质层的一种或多种工艺气体供应到沉积反应器的处理室中，在该基板上形成电介质层。 然后将适合于形成金属层的一种或多种工艺气体供应到在电介质层上形成金属层的沉积反应器的处理室中。 然后将适合于形成金属氮化物粘合层的一种或多种工艺气体供应到沉积反应器的处理室中，在金属层上形成金属氮化物粘附层。 然后重复该顺序以形成所需数量的层。

公开(公告)号：US11894228B2

公开(公告)日：2024-02-06

申请号：US17412721

申请日：2021-08-26

Applicant: Applied Materials, Inc.

Inventor： Sudha S. Rathi ,  Ganesh Balasubramanian ,  Nagarajan Rajagopalan ,  Abdul Aziz Khaja ,  Prashanthi Para ,  Hiral D. Tailor

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/50

CPC classification number: H01L21/02274 ,  C23C16/50 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/02115 ,  H01J2237/332

Abstract: Exemplary methods of semiconductor processing may include forming a plasma of a carbon-containing precursor in a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a substrate housed in the processing region of the semiconductor processing chamber. The methods may include halting a flow of the carbon-containing precursor into the processing region of the semiconductor processing chamber. The methods may include contacting the carbon-containing material with plasma effluents of an oxidizing material. The methods may include forming volatile materials from a surface of the carbon-containing material.

公开(公告)号：US10060032B2

公开(公告)日：2018-08-28

申请号：US15802496

申请日：2017-11-03

Applicant: Applied Materials, Inc.

Inventor： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Wenyoung Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik ,  Ganesh Balasubramanian

IPC: G01B11/06 ,  C23C16/52 ,  H01L21/687 ,  C23C16/509 ,  H01L21/67 ,  G01N21/55 ,  G01N21/65 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455 ,  H01L21/00

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US09896326B2

公开(公告)日：2018-02-20

申请号：US14954634

申请日：2015-11-30

Applicant: Applied Materials, Inc.

Inventor： Jingmei Liang ,  Kiran V. Thadani ,  Jessica S. Kachian ,  Nagarajan Rajagopalan

IPC: H01L21/02 ,  B81B3/00 ,  C23C16/40 ,  C23C16/505 ,  C23C16/452 ,  C23C16/455

CPC classification number: B81B3/00 ,  C23C16/401 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/505 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02315

Abstract: A method of reducing line bending and surface roughness of a substrate with pillars includes forming a treated surface by treating a pillar-containing substrate with a radical. The radical may be silicon-based, nitrogen-based or oxygen-based. The method may include forming a dielectric film over the treated surface by reacting an organosilicon precursor and an oxygen precursor. The method may include curing the dielectric film at a temperature of about 150° C. or less. A method of reducing line bending and surface roughness of a substrate with pillars includes forming a dielectric film over a pillar-containing substrate by reacting an organosilicon precursor, an oxygen precursor, and a radical precursor. The method may include curing the dielectric film at a temperature of about 150° C. or less. The radical precursor may be selected from the group consisting of nitrogen-based radical precursor, oxygen-based radical precursor, and silicon-based radical precursor.

公开(公告)号：US20150226540A1

公开(公告)日：2015-08-13

申请号：US14422148

申请日：2013-10-23

Applicant: Applied Materials, Inc.

Inventor： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Ganesh Balasubramanian ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik

IPC: G01B11/06 ,  C23C16/46 ,  C23C16/505 ,  C23C16/50 ,  C23C16/458

CPC classification number: C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

Abstract: Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract translation: 描述了根据PECVD工艺处理衬底的设备和方法。 调整衬底的温度分布以改变衬底上的沉积速率分布。 调整等离子体密度分布以改变跨衬底的沉积速率分布。 暴露于等离子体的室表面被加热以改善等离子体密度均匀性并减少在室表面上形成低质量的沉积物。 原位计量可用于监测沉积过程的进展并触发涉及衬底温度曲线，等离子体密度分布，压力，温度和反应物流动的控制动作。