公开(公告)号：US08283755B2

公开(公告)日：2012-10-09

申请号：US13067180

申请日：2011-05-13

申请人： Nobuo Hayasaka ,  Katsuya Okumura ,  Keiichi Sasaki ,  Mie Matsuo

发明人： Nobuo Hayasaka ,  Katsuya Okumura ,  Keiichi Sasaki ,  Mie Matsuo

IPC分类号： H01L29/40

CPC分类号： H01L23/642 ,  H01L21/76898 ,  H01L23/367 ,  H01L23/481 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15331 ,  H01L2924/00

摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.

摘要翻译： 公开了一种多芯片半导体器件，其中堆叠芯片，每个芯片包括形成在顶部的半导体衬底和电路部件，以及形成在半导体衬底的顶部上的层间绝缘膜。 至少一个芯片具有穿过半导体衬底和层间绝缘膜的通孔中形成的金属的连接插头。 具有连接插头的芯片通过该连接插头与另一个芯片电连接。

公开(公告)号：US08247289B2

公开(公告)日：2012-08-21

申请号：US11508141

申请日：2006-08-23

申请人： Yoshiki Yamanishi ,  Muneo Harada ,  Takahiro Kitano ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Kinji Yamada ,  Tomotaka Shinoda ,  Katsuya Okumura ,  Shuichi Kawano

发明人： Yoshiki Yamanishi ,  Muneo Harada ,  Takahiro Kitano ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Kinji Yamada ,  Tomotaka Shinoda ,  Katsuya Okumura ,  Shuichi Kawano

IPC分类号： H01L21/8242 ,  H01L21/20 ,  H01L21/00

CPC分类号： H01L23/50 ,  H01G4/228 ,  H01G4/33 ,  H01L23/481 ,  H01L24/81 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01056 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H05K1/162 ,  H05K3/002 ,  H05K2201/09509 ,  H05K2201/096 ,  H05K2201/10378

摘要： A capacitor having a high quality and a manufacturing method of the same are provided.A capacitor has a lower electrode formed on an oxide film, a dielectric layer formed on the lower electrode, an upper electrode formed so as to face the lower electrode with the dielectric layer between, and an upper electrode formed so as to cover the upper electrode, an opening portion of the upper electrode and an opening portion of the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to pattern the dielectric layer by using the upper electrode as a mask, and provide a capacitor having a high-quality dielectric layer by preventing impurity diffusion into the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to prevent the dielectric layer from being exposed to etching liquid, liquid developer, etc.

摘要翻译： 提供了具有高质量的电容器及其制造方法。 电容器具有形成在氧化膜上的下电极，形成在下电极上的电介质层，形成为与电极之间介电层相对的下电极的上电极和形成为覆盖上电极的上电极 ，上电极的开口部分和电介质层的开口部分。 通过在电介质层上形成上电极，可以通过使用上电极作为掩模对电介质层进行图案化，并且通过防止杂质扩散到电介质层中来提供具有高质量电介质层的电容器。 通过在电介质层上形成上部电极，可以防止电介质层暴露于蚀刻液体，液体显影剂等

公开(公告)号：US08174093B2

公开(公告)日：2012-05-08

申请号：US12926104

申请日：2010-10-26

申请人： Nobuo Hayasaka ,  Katsuya Okumura ,  Keiichi Sasaki ,  Mie Matsuo

发明人： Nobuo Hayasaka ,  Katsuya Okumura ,  Keiichi Sasaki ,  Mie Matsuo

IPC分类号： H01L29/40

CPC分类号： H01L23/642 ,  H01L21/76898 ,  H01L23/367 ,  H01L23/481 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15331 ,  H01L2924/00

摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.

公开(公告)号：US20120024318A1

公开(公告)日：2012-02-02

申请号：US13192694

申请日：2011-07-28

申请人： Masamitsu ITOH ,  Katsuya Okumura ,  Taro Inada ,  Jun Watanabe

发明人： Masamitsu ITOH ,  Katsuya Okumura ,  Taro Inada ,  Jun Watanabe

IPC分类号： B08B7/00 ,  B05D5/06 ,  B05D5/12 ,  B05D5/10

CPC分类号： B08B7/0028 ,  B05D3/0254 ,  B05D5/00 ,  G03F7/707 ,  G03F7/70925 ,  Y10T428/28 ,  Y10T428/2848

摘要： According to one embodiment, a reticle chuck cleaner for cleaning a reticle chuck of an EUV exposure apparatus includes a substrate having a shape to be carried to the reticle chuck of the EUV exposure apparatus, and an adhesive formed on one of the main surfaces of the substrate.

摘要翻译： 根据一个实施例，用于清洁EUV曝光装置的光罩卡盘的掩模版卡盘清洁器包括具有要携带到EUV曝光装置的掩模版卡盘的形状的基板，以及形成在其中一个主表面上的粘合剂 基质。

公开(公告)号：US20110215443A1

公开(公告)日：2011-09-08

申请号：US13067180

申请日：2011-05-13

申请人： Nobuo Hayasaka ,  Katsuya Okumura ,  Keiichi Sasaki ,  Mie Matsuo

发明人： Nobuo Hayasaka ,  Katsuya Okumura ,  Keiichi Sasaki ,  Mie Matsuo

IPC分类号： H01L29/41

CPC分类号： H01L23/642 ,  H01L21/76898 ,  H01L23/367 ,  H01L23/481 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15331 ,  H01L2924/00

摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.

公开(公告)号：US20110101522A1

公开(公告)日：2011-05-05

申请号：US12926104

申请日：2010-10-26

申请人： Nobuo Hayasaka ,  Katsuya Okumura ,  Keiichi Sasaki ,  Mie Matsuo

发明人： Nobuo Hayasaka ,  Katsuya Okumura ,  Keiichi Sasaki ,  Mie Matsuo

IPC分类号： H01L23/485

CPC分类号： H01L23/642 ,  H01L21/76898 ,  H01L23/367 ,  H01L23/481 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15331 ,  H01L2924/00

摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.

摘要翻译： 公开了一种多芯片半导体器件，其中堆叠芯片，每个芯片包括形成在顶部的半导体衬底和电路部件，以及形成在半导体衬底的顶部上的层间绝缘膜。 至少一个芯片具有穿过半导体衬底和层间绝缘膜的通孔中形成的金属的连接插头。 具有连接插头的芯片通过该连接插头与另一个芯片电连接。

公开(公告)号：US07649369B2

公开(公告)日：2010-01-19

申请号：US10591645

申请日：2005-03-03

申请人： Katsuya Okumura ,  Toshihiro Yonezawa

发明人： Katsuya Okumura ,  Toshihiro Yonezawa

IPC分类号： G01R31/02 ,  G01R31/28

CPC分类号： G01R1/06738 ,  G01R3/00 ,  Y10T29/5193

摘要： In accordance with an increase in speed, a wiring structure has rapidly become more microscopic and thinner and a wiring layer has become extremely thin, and therefore, giving a contact load to a probe for the inspection as has been conventionally done causes damage to a wiring layer and an insulation layer because the probe penetrates not only the oxide film but also the wiring layer or because of a concentration stress from the probe. On the other hand, decreasing the contact load causes unstable continuity between the probe and an electrode pad.It is an object of the present invention to surely and stably inspect an object to be inspected by breaking an oxide film with a low stylus pressure.The present invention is a probe that comes into electrical contact with an object to be inspected when inspecting an electrical characteristic of the object to be inspected, the probe including: a probe main body having a contact portion that comes into contact with the object to be inspected; and a plurality of conductive materials having tip portions projecting from the contact portion of the probe main body.

摘要翻译： 根据速度的增加，布线结构迅速变得更微细而更薄，并且布线层变得非常薄，因此如以往那样对检查用探针进行接触负载，导致布线损坏 层和绝缘层，因为探针不仅穿透氧化膜，而且穿透布线层，或者由于来自探针的浓度应力。 另一方面，降低接触负载会导致探针与电极焊盘之间的连续性不稳定。 本发明的目的是通过以低的触针压力破坏氧化膜来可靠且稳定地检查被检查物体。 本发明是一种探测器，当检测被检查物体的电气特性时，与被检查物体电接触，该探针包括：探针主体，具有与物体接触的接触部分 检查 以及多个导电材料，其具有从探针主体的接触部分突出的尖端部分。

公开(公告)号：US20090293647A1

公开(公告)日：2009-12-03

申请号：US12088669

申请日：2006-09-28

申请人： Takeshi Muneishi ,  Toshihiko Uemura ,  Katsuya Okumura

发明人： Takeshi Muneishi ,  Toshihiko Uemura ,  Katsuya Okumura

IPC分类号： G01N1/14 ,  B01L3/00

CPC分类号： H01L21/6875 ,  H01L21/68757

摘要： Because a sample holder 100 is composed of a plurality of convex parts 1 provided on a top face of a base substance 2, and the plurality of convex parts 1 are spherical surfaces 1a formed of a single crystal or amorphous material, frictional wear of the sample at contact parts between a sample 4 and the convex parts 1 is reduced, thereby making it possible to inhibit particle generation. Further, because a joining layer 3 is formed of a single crystal or amorphous material, there is no defect that particles scattered on the sample holder 100 fill up it, which makes it possible to easily keep it in a clean state by cleaning, and it is possible to effectively reduce reattachment of particles to the sample 4.

摘要翻译： 由于样品保持器100由设置在基体2的顶面上的多个凸部1构成，多个凸部1是由单晶或非晶材料形成的球面1a，所以样品的摩擦磨损 在样品4与凸部1之间的接触部分被还原，从而可以抑制颗粒的产生。 此外，由于接合层3由单晶或非晶材料形成，所以不存在散布在样品架100上的颗粒填充的缺陷，这使得可以通过清洁容易地将其保持在清洁状态，并且其 可以有效地减少颗粒到样品4的再附着。

公开(公告)号：US07604832B2

公开(公告)日：2009-10-20

申请号：US10927155

申请日：2004-08-27

申请人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

发明人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

IPC分类号： B05D1/02 ,  B05D3/12

CPC分类号： H01L21/6715 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/31633

摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).

摘要翻译： 公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动， 将供给的溶液供给到基板上以形成液膜，其中喷嘴的排出口和基板之间的距离h被设定为不小于2mm，并且在小于5×10 -5 qgamma（mm）的范围内 相对于溶液的表面张力γ（N / m），通过排出口连续排出的溶液的排出速度q（m / sec），常数为5×10 -5（m·sec / N）。

公开(公告)号：US20090026368A1

公开(公告)日：2009-01-29

申请号：US12162071

申请日：2007-01-24

申请人： Nobuharu Noji ,  Yoshihiko Naito ,  Hirosi Sobukawa ,  Masahiro Hatakeyama ,  Kenji Terao ,  Takeshi Murakami ,  Katsuya Okumura ,  Tatsuhiko Higashiki

发明人： Nobuharu Noji ,  Yoshihiko Naito ,  Hirosi Sobukawa ,  Masahiro Hatakeyama ,  Kenji Terao ,  Takeshi Murakami ,  Katsuya Okumura ,  Tatsuhiko Higashiki

IPC分类号： G01N23/00

CPC分类号： H01J37/29 ,  H01J37/045 ,  H01J2237/2446

摘要： Provided is a defect inspection apparatus and an inspection (or evaluation) method with highly improved accuracy, which would not be provided by the prior art, in the defect inspection apparatus used in a manufacturing process of a semiconductor device.Provided is a method for inspecting a sample surface with a projection type electron beam inspection apparatus, comprising the steps of: forming such an irradiation area on the sample surface by an electron beam generated from an electron gun 21 that has approximately a circular or elliptical shape of a size larger than a pattern on the sample surface; irradiating the electron beam substantially onto a center of the pattern on the sample surface; and forming an image on an electron detection plane of a detector from secondary electrons emanating from the sample surface in response to the irradiation of the electron beam for inspecting the sample surface.

摘要翻译： 提供了在半导体器件的制造工艺中使用的缺陷检查装置中，现有技术不能提供高精度的缺陷检查装置和检查（或评价）方法。 提供一种用投影型电子束检查装置检查样品表面的方法，包括以下步骤：通过由具有大致圆形或椭圆形的电子枪21产生的电子束在样品表面上形成这样的照射区域 尺寸大于样品表面上的图案; 将电子束基本上照射到样品表面上的图案的中心; 以及响应于用于检查样品表面的电子束的照射，从从样品表面发射的二次电子在检测器的电子检测平面上形成图像。