Miniature Surface Mount Device
    12.
    发明申请
    Miniature Surface Mount Device 有权
    微型表面贴装装置

    公开(公告)号:US20130341656A1

    公开(公告)日:2013-12-26

    申请号:US14012764

    申请日:2013-08-28

    Applicant: Cree, Inc.

    Abstract: A surface mount LED package includes a lead frame carrying a plurality of LEDs and a plastic casing at least partially encasing the lead frame. The lead frame includes an electrically conductive chip carrier and first, second, and third electrically conductive connection parts separate from the electrically conductive chip carrier. Each of the first, second and third electrically conductive connection parts has an upper surface, a lower surface, and a connection pad on the upper surface. The plurality of LEDs are disposed on an upper surface of the electrically conductive chip carrier. Each LED has a first electrical terminal electrically coupled to the electrically conductive chip carrier. Each LED has a second electrical terminal electrically coupled to the connection pad of a corresponding one of the first, second, and third electrically conductive connection parts.

    Abstract translation: 表面贴装LED封装包括承载多个LED的引线框架和至少部分地封装引线框架的塑料外壳。 引线框架包括导电芯片载体和与导电芯片载体分开的第一,第二和第三导电连接部件。 第一,第二和第三导电连接部分中的每一个具有上表面,下表面和上表面上的连接垫。 多个LED设置在导电芯片载体的上表面上。 每个LED具有电耦合到导电芯片载体的第一电端子。 每个LED具有电耦合到第一,第二和第三导电连接部分中对应的一个的连接焊盘的第二电端子。

    LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES
    13.
    发明申请
    LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES 有权
    具有减少电流结构的发光装置

    公开(公告)号:US20130292639A1

    公开(公告)日:2013-11-07

    申请号:US13856928

    申请日:2013-04-04

    Applicant: Cree, Inc.

    Abstract: A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad.

    Abstract translation: 发光器件包括p型半导体层,n型半导体层和p型半导体层和n型半导体层之间的有源区。 在与有源区相对的p型半导体层或n型半导体层之一上设置接合焊盘,所述接合焊盘与p型半导体层或n型半导体层中的一者电连接 。 导电指状物从接合焊盘延伸并与其电连接。 在与导电指状物对准的发光器件中设置降低的导电性区域。 还可以在接合焊盘和减小的导电区域之间设置反射器。 还可以在不与接合焊盘对准的发光器件中提供降低的导电性区域。

    Optoelectronic Structures with High Lumens Per Wafer
    15.
    发明申请
    Optoelectronic Structures with High Lumens Per Wafer 审中-公开
    具有高流明每个晶圆的光电结构

    公开(公告)号:US20130146904A1

    公开(公告)日:2013-06-13

    申请号:US13693776

    申请日:2012-12-04

    Applicant: Cree, Inc.

    Abstract: An optoelectronic structure includes a wafer, a plurality of light emitting diode structures on a surface of the wafer, and a coating including a wavelength conversion material on the plurality of light emitting diode structures. The light emitting diode structures and the coating are configured to emit white light in response to electrical energy supplied to the light emitting diode structures. The light emitting diode structures from a single wafer are configured to generate an aggregate light output in excess of 800,000 lumens.

    Abstract translation: 光电结构包括晶片,晶片表面上的多个发光二极管结构,以及在多个发光二极管结构上包括波长转换材料的涂层。 发光二极管结构和涂层被配置为响应于提供给发光二极管结构的电能而发出白光。 来自单个晶片的发光二极管结构被配置为产生超过80万流明的聚集光输出。

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