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公开(公告)号：US06900497B2
公开(公告)日：2005-05-31
申请号：US10792762
申请日：2004-03-05
IPC分类号： H01G4/008 , H01G4/33 , H01L21/00 , H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/108 , H01L27/115 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/11502 , H01G4/008 , H01G4/33 , H01L27/10852 , H01L27/11507 , H01L28/55 , H01L28/65 , H01L28/75 , H01L28/91
摘要： A ferroelectric or high dielectric constant capacitor having a multilayer lower electrode comprising at least two layers—a platinum layer and a platinum-rhodium layer—for use in a random access memory (RAM) cell. The platinum layer of the lower electrode adjoins the capacitor dielectric, which is a ferroelectric or high dielectric constant dielectric such as BST, PZT, SBT or tantalum pentoxide. The platinum-rhodium layer serves as an oxidation barrier and may also act as an adhesion layer for preventing separation of the lower electrode from the substrate, thereby improving capacitor performance. The multilayer electrode may have titanium and/or titanium nitride layers under the platinum-rhodium layer for certain applications. The capacitor has an upper electrode which may be a conventional electrode or which may have a multilayer structure similar to that of the lower electrode. Processes for manufacturing the multilayer lower electrode and the capacitor are also disclosed.
摘要翻译： 一种铁电或高介电常数电容器，其具有包括至少两层的多层下电极 - 铂层和铂 - 铑层，用于随机存取存储器（RAM）单元。 下电极的铂层与电容器电介质接触，电容器电介质是铁电或高介电常数电介质，如BST，PZT，SBT或五氧化二钽。 铂 - 铑层用作氧化屏障，并且还可以用作防止下电极与衬底分离的粘合层，从而提高电容器性能。 对于某些应用，多层电极可以在铂 - 铑层下方具有钛和/或氮化钛层。 电容器具有可以是常规电极的上电极，或者可以具有与下电极类似的多层结构。 还公开了用于制造多层下电极和电容器的工艺。
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公开(公告)号：US06777739B2
公开(公告)日：2004-08-17
申请号：US09930960
申请日：2001-08-17
IPC分类号： H01L31119
CPC分类号： H01L27/11502 , H01G4/008 , H01G4/33 , H01L27/10852 , H01L27/11507 , H01L28/55 , H01L28/65 , H01L28/75 , H01L28/91
摘要： A ferroelectric or high dielectric constant capacitor having a multilayer lower electrode comprising at least two layers—a platinum layer and a platinum-rhodium layer—for use in a random access memory (RAM) cell. The platinum layer of the lower electrode adjoins the capacitor dielectric, which is a ferroelectric or high dielectric constant dielectric such as BST, PZT, SBT or tantalum pentoxide. The platinum-rhodium layer serves as an oxidation barrier and may also act as an adhesion layer for preventing separation of the lower electrode from the substrate, thereby improving capacitor performance. The multilayer electrode may have titanium and/or titanium nitride layers under the platinum-rhodium layer for certain applications. The capacitor has an upper electrode which may be a conventional electrode or which may have a multilayer structure similar to that of the lower electrode. Processes for manufacturing the multilayer lower electrode and the capacitor are also disclosed.
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公开(公告)号：US06746916B2
公开(公告)日：2004-06-08
申请号：US10233590
申请日：2002-09-04
IPC分类号： H01L218242
CPC分类号： H01L27/11502 , H01G4/008 , H01G4/33 , H01L27/10852 , H01L27/11507 , H01L28/55 , H01L28/65 , H01L28/75 , H01L28/91
摘要： A ferroelectric or high dielectric constant capacitor having a multilayer lower electrode comprising at least two layers—a platinum layer and a platinum-rhodium layer—for use in a random access memory (RAM) cell is disclosed. The platinum layer of the lower electrode is formed such that it adjoins the capacitor dielectric, which is a ferroelectric or high dielectric constant dielectric such as BST, PZT, SBT or tantalum pentoxide. The platinum-rhodium layer serves as an oxidation barrier and may also act as an adhesion layer for preventing separation of the lower electrode from the substrate, thereby improving capacitor performance. The multilayer electrode may have titanium and/or titanium nitride layers under the platinum-rhodium layer for certain applications. The capacitor has an upper electrode which may be a conventional electrode or which may have a multilayer structure similar to that of the lower electrode.
摘要翻译： 公开了一种用于随机存取存储器（RAM）单元的具有包括至少两层的多层下电极 - 铂层和铂 - 铑层的铁电或高介电常数电容器。 下电极的铂层形成为与电容电介质接触，电容器电介质是铁电或高介电常数电介质，例如BST，PZT，SBT或五氧化二钽。 铂 - 铑层用作氧化屏障，并且还可以用作防止下电极与衬底分离的粘合层，从而提高电容器性能。 对于某些应用，多层电极可以在铂 - 铑层下方具有钛和/或氮化钛层。 电容器具有可以是常规电极的上电极，或者可以具有与下电极类似的多层结构。
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14.发明授权Multilayer electrode for ferroelectric and high dielectric constant capacitors 失效用于铁电和高介电常数电容器的多层电极公开(公告)号：US06297527B1
公开(公告)日：2001-10-02
申请号：US09310408
申请日：1999-05-12
IPC分类号： H01L31119
CPC分类号： H01L27/11502 , H01G4/008 , H01G4/33 , H01L27/10852 , H01L27/11507 , H01L28/55 , H01L28/65 , H01L28/75 , H01L28/91
摘要： A ferroelectric or high dielectric constant capacitor having a multilayer lower electrode comprising at least two layers—a platinum layer and a platinum-rhodium layer—for use in a random access memory (RAM) cell. The platinum layer of the lower electrode adjoins the capacitor dielectric, which is a ferroelectric or high dielectric constant dielectric such as BST, PZT, SBT or tantalum pentoxide. The platinum-rhodium layer serves as an oxidation barrier and may also act as an adhesion layer for preventing separation of the lower electrode from the substrate, thereby improving capacitor performance. The multilayer electrode may have titanium and/or titanium nitride layers under the platinum-rhodium layer for certain applications. The capacitor has an upper electrode which may be a conventional electrode or which may have a multilayer structure similar to that of the lower electrode. Processes for manufacturing the multilayer lower electrode and the capacitor are also disclosed.
摘要翻译： 一种铁电或高介电常数电容器，其具有包括至少两层的多层下电极 - 铂层和铂 - 铑层，用于随机存取存储器（RAM）单元。 下电极的铂层与电容器电介质接触，电容器电介质是铁电或高介电常数电介质，如BST，PZT，SBT或五氧化二钽。 铂 - 铑层用作氧化屏障，并且还可以用作防止下电极与衬底分离的粘合层，从而提高电容器性能。 对于某些应用，多层电极可以在铂 - 铑层下方具有钛和/或氮化钛层。 电容器具有可以是常规电极的上电极，或者可以具有与下电极类似的多层结构。 还公开了用于制造多层下电极和电容器的工艺。
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15.发明授权公开(公告)号：US08604459B1
公开(公告)日：2013-12-10
申请号：US13491550
申请日：2012-06-07
IPC分类号： H01L29/06
CPC分类号： H01L29/0673 , B82Y10/00 , H01L51/0048 , H01L51/0558 , H01L51/107
摘要： Electrical devices containing carbon nanotubes can be passivated to protect the carbon nanotubes from degradation while substantially preserving the carbon nanotubes' electrical conductivity and switching characteristics. Such electrical devices can include a first metal contact, a switching layer containing a plurality of carbon nanotubes disposed on the first metal contact, a passivation layer containing amorphous carbon, a metal carbide, or any combination thereof that is disposed on at least a top surface of the switching layer, and a second metal contact disposed upon the passivation layer. Methods for forming the electrical devices can include disposing a passivation layer containing amorphous carbon on at least a top surface of the switching layer, and optionally heating to at least partially convert the amorphous carbon within the passivation layer into a metal carbide.
摘要翻译： 可以钝化包含碳纳米管的电子器件以保护碳纳米管免受降解，同时基本上保留碳纳米管的电导率和开关特性。 这样的电气装置可以包括第一金属触点，包含设置在第一金属触点上的多个碳纳米管的开关层，包含无定形碳的钝化层，金属碳化物或其任何组合，其设置在至少一个顶表面 以及设置在钝化层上的第二金属触点。 用于形成电气装置的方法可以包括在开关层的至少顶表面上设置含有无定形碳的钝化层，以及任选地加热至少部分地将钝化层内的无定形碳转化为金属碳化物。
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16.发明授权Two terminal nanotube switch, memory array incorporating the same and method of making 有权两端子纳米管开关，内存阵列及其制作方法公开(公告)号：US08253171B1
公开(公告)日：2012-08-28
申请号：US12857494
申请日：2010-08-16
IPC分类号： H01L27/118
CPC分类号： B82Y10/00 , H01L27/2436 , H01L27/2463 , H01L29/413 , H01L45/04 , H01L45/1226 , H01L45/149 , H01L45/1641
摘要： A two terminal switching device includes a first conductive terminal, a second conductive terminal in spaced relation to the first terminal, the first terminal encompassed by the second terminal. The device also includes an electrically insulating spacer that encompasses the first terminal and provides the spaced relation between the second terminal and the first terminal. It also includes a nanotube article comprising at least one carbon nanotube, the nanotube article being arranged to overlap at least a portion of each of the first and second terminals. The device also includes a stimulus circuit in electrical communication with at least one of the first and second terminals that is capable of applying a first electrical stimulus to at least one of the first and second terminals to change the resistance of the device between the first and second terminals from a relatively low resistance to a relatively high resistance.
摘要翻译： 双端开关装置包括第一导电端子，与第一端子间隔开的第二导电端子，由第二端子包围的第一端子。 该装置还包括电绝缘间隔件，其包围第一端子并且提供第二端子和第一端子之间的间隔关系。 其还包括包含至少一个碳纳米管的纳米管制品，所述纳米管制品被布置成与所述第一和第二端子中的每一个的至少一部分重叠。 该装置还包括与第一和第二端子中的至少一个电连通的刺激电路，其能够对第一和第二端子中的至少一个施加第一电刺激，以改变装置在第一和第二端子之间的电阻 第二端子从相对较低的电阻到相对较高的电阻。
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公开(公告)号：US07872291B2
公开(公告)日：2011-01-18
申请号：US11856571
申请日：2007-09-17
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L29/511 , C23C16/45542 , C23C16/515 , H01L21/02183 , H01L21/02274 , H01L21/0228 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28562 , H01L21/28568 , H01L21/3141 , H01L21/76843 , H01L28/75 , H01L28/84 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substrate. In an embodiment, the layer includes at least one element from each of the first and second precursors. In an embodiment, the layer is TaN. In an embodiment, the precursors are TaF5 and NH3. In an embodiment, the plasma begins during the purge gas flow between the pulse of first precursor and the pulse of second precursor. In an embodiment, the enhancement is thermal energy. In an embodiment, the thermal energy is greater than generally accepted for ALD (>300 degrees Celsius). The enhancement assists the reaction of the precursors to deposit a layer on a substrate.
摘要翻译： 描述了增加原子层沉积的方法。 在一个实施例中，增强是使用等离子体。 等离子体在将第二前体流入室之前开始。 第二前体与先前的前体反应以在基底上沉积一层。 在一个实施方案中，该层包括来自第一和第二前体中的每一个的至少一种元素。 在一个实施例中，层是TaN。 在一个实施方案中，前体是TaF 5和NH 3。 在一个实施例中，等离子体在第一前体的脉冲和第二前体的脉冲之间的吹扫气流期间开始。 在一个实施例中，增强是热能。 在一个实施例中，热能大于ALD（> 300摄氏度）通常接受的热能。 该增强有助于前体在基底上沉积一层的反应。
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公开(公告)号：US07838084B2
公开(公告)日：2010-11-23
申请号：US11491383
申请日：2006-07-20
申请人： Garo J. Derderian , Shuang Meng , Danny Dynka
发明人： Garo J. Derderian , Shuang Meng , Danny Dynka
CPC分类号： C23C16/45542 , C23C16/402 , C23C16/403 , C23C16/407 , C23C16/45531
摘要： The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the deposition chamber from a gaseous precursor. The chemisorbed first species is contacted with remote plasma oxygen derived at least in part from at least one of O2 and O3 and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer. The chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen are successively repeated effective to form porous oxide on the substrate. Other aspects and implementations are contemplated.
摘要翻译： 本发明包括在衬底上沉积氧化物的原子层沉积方法。 在一个实施方式中，衬底位于沉积室内。 第一种物质被化学吸附到基底上以在气相前体的沉积室内形成第一物质单层。 化学吸附的第一物质与至少部分地从O 2和O 3中的至少一种导出的远程等离子体氧接触，并且与远离等离子体氮有效地与第一物质反应以形成包含第一物质单层的组分的氧化物的单层 。 连续重复化学吸附和与远程等离子体氧和远程等离子体氮的接触，以在衬底上形成多孔氧化物。 考虑了其他方面和实现。
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19.发明授权Systems and methods for forming niobium and/or vanadium containing layers using atomic layer deposition 失效使用原子层沉积形成铌和/或含钒层的系统和方法公开(公告)号：US07837797B2
公开(公告)日：2010-11-23
申请号：US12352223
申请日：2009-01-12
CPC分类号： H01L21/02205 , C23C16/405 , C23C16/45553 , H01L21/02175 , H01L21/0228 , H01L21/28562 , H01L21/3141 , H01L21/31604 , H01L28/90
摘要： A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more precursor compounds that include niobium and/or vanadium and using an atomic layer deposition process including a plurality of deposition cycles.
摘要翻译： 使用一种或多种包括铌和/或钒的前体化合物在基板上，特别是用于制造半导体或存储器件结构的半导体衬底或衬底组件中形成（以及用于形成）含金属层的方法 以及使用包括多个沉积循环的原子层沉积工艺。
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20.发明授权Methods of depositing materials over substrates, and methods of forming layers over substrates 有权在衬底上沉积材料的方法，以及在衬底上形成层的方法公开(公告)号：US07794787B2
公开(公告)日：2010-09-14
申请号：US12436936
申请日：2009-05-07
CPC分类号： C23C16/45525 , C23C16/40 , C23C16/448 , Y10S427/101
摘要： The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is utilized to introduce multiple precursors into the reaction chamber during ALD. The invention can be utilized to form any of various materials, including metal-containing materials, such as, for example, metal oxides, metal nitrides, and materials consisting of metal. Metal oxides can be formed by utilizing a supercritical fluid can be utilized to introduce a metal-containing precursor into reaction chamber, with the precursor then forming a metal-containing layer over a surface of a substrate. Subsequently, the metal-containing layer can be reacted with oxygen to convert at least some of the metal within the layer to metal oxide.
摘要翻译： 本发明包括利用超临界流体将前体引入反应室的方法。 在一些方面，使用超临界流体在ALD期间将至少一种前体引入室中，并且在特定方面，超临界流体用于在ALD期间将多种前体引入反应室。 本发明可用于形成任何各种材料，包括含金属的材料，例如金属氧化物，金属氮化物和由金属组成的材料。 可以通过利用超临界流体来形成金属氧化物，以将含金属的前体引入反应室，然后前体在基材的表面上形成含金属的层。 随后，含金属层可以与氧反应以将该层内的至少一些金属转化为金属氧化物。
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