FORMING POROUS DIELECTRIC STRUCTURES WITH SPATIALLY-CONTROLLED POROSITY

    公开(公告)号:US20250006623A1

    公开(公告)日:2025-01-02

    申请号:US18217056

    申请日:2023-06-30

    Abstract: Microelectronic integrated circuit package structures include one or more integrated circuit (IC) package metallization levels comprising metallization features. A dielectric material is adjacent to one or more of the metallization features, where the dielectric material comprises a matrix material and a surfactant. A plurality of substantially spherical pores are within the matrix material, where the substantially spherical pores are surrounded by an outer shell comprising the matrix material.

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