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公开(公告)号：US10054737B2
公开(公告)日：2018-08-21
申请号：US15352520
申请日：2016-11-15
Applicant: Intel Corporation
Inventor： Mauro J Kobrinsky , Henning Braunisch , Shawna M. Liff , Peter L. Chang , Bruce A. Block , Johanna M. Swan
CPC classification number: G02B6/12004 , G02B6/12 , G02B6/30 , G02B6/4214 , G02B6/4257 , G02B6/428 , G02B2006/12061 , G02B2006/12121 , G02B2006/12123 , H01L21/563 , H01L23/49827 , H01L23/49838 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/167 , H01L2224/13025 , H01L2224/13082 , H01L2224/131 , H01L2224/13147 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/17181 , H01L2224/81011 , H01L2224/81024 , H01L2224/81191 , H01L2224/81203 , H01L2224/81815 , H01L2224/83048 , H01L2224/83102 , H01L2224/83986 , H01L2224/92125 , H01L2924/12042 , H01L2924/12043 , H01L2924/1431 , H01L2924/1432 , H01L2924/15311 , H01L2924/15312 , H04B10/25 , H04B10/40 , H04B10/801 , H01L2924/00014 , H01L2924/014
Abstract: Photonic components are placed on the processor package to bring the optical signal close to the processor die. The processor package includes a substrate to which the processor die is coupled, and which allows the processor die to connect to a printed circuit board. The processor package also includes transceiver logic, electrical-optical conversion circuits, and an optical coupler. The electrical-optical conversion circuits can include laser(s), modulator(s), and photodetector(s) to transmit and receive and optical signal. The coupler interfaces to a fiber that extends off the processor package. Multiple fibers can be brought to the processor package allowing for a scalable high-speed, high-bandwidth interconnection to the processor.
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公开(公告)号：US10673405B2
公开(公告)日：2020-06-02
申请号：US16328753
申请日：2016-09-30
Applicant: INTEL CORPORATION
Inventor： Sansaptak Dasgupta , Marko Radosavljevic , Han Wui Then , Bruce A. Block , Paul B. Fischer
IPC: H01L41/316 , H01L41/297 , H01L41/187 , H01L41/083 , H01L41/047 , H01L27/20 , H03H9/17 , H03H9/58 , H03H3/02 , H01L41/08 , H03H9/02 , H03H9/13 , H03H9/54 , H03H9/56
Abstract: Techniques are disclosed for forming high frequency film bulk acoustic resonator (FBAR) devices that include a bottom electrode formed of a two-dimensional electron gas (2DEG). The disclosed FBAR devices may be implemented with various group III-nitride (III-N) materials, and in some cases, the 2DEG may be formed at a heterojunction of two epitaxial layers each formed of III-N materials, such as a gallium nitride (GaN) layer and an aluminum nitride (AlN) layer. The 2DEG bottom electrode may be able to achieve similar or increased carrier transport as compared to an FBAR device having a bottom electrode formed of metal. Additionally, in some embodiments where AlN is used as the piezoelectric material for the FBAR device, the AlN may be epitaxially grown which may provide increased performance as compared to piezoelectric material that is deposited by traditional sputtering techniques.
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公开(公告)号：US20190214965A1
公开(公告)日：2019-07-11
申请号：US16327720
申请日：2016-09-30
Applicant: INTEL CORPORATION
Inventor： Sansaptak Dasgupta , Bruce A. Block , Paul B. Fischer , Han Wui Then , Marko Radosavljevic
CPC classification number: H03H9/205 , H03H3/02 , H03H9/02015 , H03H9/02031 , H03H9/02086 , H03H9/02157 , H03H9/132 , H03H9/172 , H03H9/587 , H03H9/6436 , H03H2003/0071 , H03H2003/021
Abstract: A bulk acoustic resonator architecture is fabricated by epitaxially forming a piezoelectric film on a top surface of post formed from an underlying substrate. In some cases, the acoustic resonator is fabricated to filter multiple frequencies. In some such cases, the resonator device includes two different resonator structures on a single substrate, each resonator structure configured to filter a desired frequency. Including two different acoustic resonators in a single RF acoustic resonator device enables that single device to filter two different frequencies in a relatively small footprint.
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Patent Agency Ranking
公开(公告)号：US09063254B2
公开(公告)日：2015-06-23
申请号：US13856063
申请日：2013-04-03
Applicant: Intel Corporation
Inventor： Bruce A. Block
IPC: G02B6/00 , B82Y20/00 , G02B6/12 , G02B6/122 , H01L31/105 , H01L31/108 , H01L31/0232
CPC classification number: G02B6/00 , B82Y20/00 , G02B6/12004 , G02B6/1226 , H01L31/0232 , H01L31/105 , H01L31/1085
Abstract: A metal-semiconductor-metal (MSM) device couples light from an optical mode in a waveguide to a surface plasmon polarition (SPP) mode on an electrode surface of the MSM device. Once in an SPP mode, the absorption of light in the semiconductor can take place in a very small area. This may allow for a shrinking of the active detector area and allow for low capacitance, very short transit distance for the electrical carriers and allow for very low voltage devices and/or very high frequency.
Abstract translation: 金属 - 半导体 - 金属（MSM）器件将光从波导中的光学模式耦合到MSM器件的电极表面上的表面等离子体激元偏振（SPP）模式。 一旦处于SPP模式，半导体中的光的吸收可以在非常小的区域中发生。 这可以允许有源检测器区域的收缩，并允许电容器的低电容，非常短的传输距离，并且允许非常低的电压器件和/或非常高的频率。
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公开(公告)号：US20200382099A1
公开(公告)日：2020-12-03
申请号：US16998389
申请日：2020-08-20
Applicant: INTEL CORPORATION
Inventor： Sansaptak Dasgupta , Bruce A. Block , Paul B. Fischer , Han Wui Then , Marko Radosavljevic
Abstract: Techniques are disclosed for forming high frequency film bulk acoustic resonator (FBAR) devices having multiple resonator thicknesses on a common substrate. A piezoelectric stack is formed in an STI trench and overgrown onto the STI material. In some cases, the piezoelectric stack can include epitaxially grown AlN. In some cases, the piezoelectric stack can include single crystal (epitaxial) AlN in combination with polycrystalline (e.g., sputtered) AlN. The piezoelectric stack thus forms a central portion having a first resonator thickness and end wings extending from the central portion having a different resonator thickness. Each wing may also have different thicknesses. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate. The end wings can have metal electrodes formed thereon, and the central portion can have a plurality of IDT electrodes patterned thereon.
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公开(公告)号：US20190190489A1
公开(公告)日：2019-06-20
申请号：US16327712
申请日：2016-09-30
Applicant: INTEL CORPORATION
Inventor： Sansaptak Dasgupta , Bruce A. Block , Paul B. Fischer , Han Wui Then , Marko Radosavljevic
CPC classification number: H03H9/205 , H03H9/02007 , H03H9/02543 , H03H9/02574 , H03H9/13 , H03H9/15 , H03H9/172 , H03H2009/02173
Abstract: Techniques are disclosed for forming high frequency film bulk acoustic resonator (FBAR) devices having multiple resonator thicknesses on a common substrate. A piezoelectric stack is formed in an STI trench and overgrown onto the STI material. In some cases, the piezoelectric stack can include epitaxially grown AlN. In some cases, the piezoelectric stack can include single crystal (epitaxial) AlN in combination with polycrystalline (e.g., sputtered) AlN. The piezoelectric stack thus forms a central portion having a first resonator thickness and end wings extending from the central portion having a different resonator thickness. Each wing may also have different thicknesses. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate. The end wings can have metal electrodes formed thereon, and the central portion can have a plurality of IDT electrodes patterned thereon.
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公开(公告)号：US20190190488A1
公开(公告)日：2019-06-20
申请号：US16327705
申请日：2016-09-30
Applicant: INTEL CORPORATION
Inventor： Sansaptak Dasgupta , Bruce A. Block , Paul B. Fischer , Han Wui Then , Marko Radosavljevic
CPC classification number: H03H9/205 , H03H3/04 , H03H9/02007 , H03H9/175 , H03H2003/025 , H03H2003/0435 , H03H2009/02173
Abstract: Techniques are disclosed for forming integrated circuit film bulk acoustic resonator (FBAR) devices having multiple resonator thicknesses on a common substrate. A piezoelectric stack is formed in an STI trench and overgrown onto the STI material. In some cases, the piezoelectric stack can include epitaxially grown AlN. In some cases, the piezoelectric stack can include single crystal (epitaxial) AlN in combination with polycrystalline (e.g., sputtered) AlN. The piezoelectric stack thus forms a central portion having a first resonator thickness and end wings extending from the central portion and having a different resonator thickness. Each wing may also have different thicknesses from one another. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate. The end wings can have metal electrodes formed thereon, and the central portion can have a plurality of IDT electrodes patterned thereon.
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公开(公告)号：US20160282698A1
公开(公告)日：2016-09-29
申请号：US14670217
申请日：2015-03-26
Applicant: Intel Corporation
Inventor： Bruce A. Block
IPC: G02F1/225 , A61B5/0492 , A61B5/0478 , A61B5/0496 , G01R29/08 , A61B5/0408
CPC classification number: G02F1/025 , A61B5/0408 , A61B5/0478 , A61B5/04886 , A61B5/0492 , A61B5/0496 , A61B2562/125 , G01R29/0885 , G01R29/12 , G02B6/1223 , G02B2006/1204 , G02B2006/12061 , G02B2006/12138 , G02B2006/12142 , G02F1/035
Abstract: A high index contrast waveguide device is disclosed and described. In one embodiment the waveguide may include a lithium niobate substrate, a waveguide with a higher refractive index than that of the lithium niobate substrate patterned on a surface thereof, and an electrode electrically coupled to the waveguide.
Abstract translation: 公开和描述了高折射率对比度波导装置。 在一个实施例中，波导可以包括铌酸锂衬底，具有比在其表面上图案化的铌酸锂衬底更高的折射率的波导和与该波导电耦合的电极。
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