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    METHOD, DEVICE AND SYSTEM FOR NON-DESTRUCTIVE DETECTION OF DEFECTS IN A SEMICONDUCTOR DIE
    11.
    发明申请
    METHOD, DEVICE AND SYSTEM FOR NON-DESTRUCTIVE DETECTION OF DEFECTS IN A SEMICONDUCTOR DIE 有权

    公开(公告)号：US20210364474A1

    公开(公告)日：2021-11-25

    申请号：US16881025

    申请日：2020-05-22

    Applicant: Intel Corporation

    Inventor： Mario Pacheco ,  Odissei Touzanov ,  Jacob Woolsey ,  Deepak Goyal

    IPC: G01N29/22 ,  G01R31/28 ,  G01N29/04

    Abstract: According to various examples, a method for non-destructive detection of defects in a semiconductor die is described. The method may include positioning an emitter above the semiconductor die. The method may include generating an emitted wave using the emitter that is directed to a focal point on a surface of the die. The method may include generating a reflected wave from the focal point. The focal point may act as a point source reflecting the emitted wave. The method may include positioning a receiver above the die to receive the reflected wave. The method may also include measuring the reflected wave to detect modulations in amplitude in the reflected wave.

    INTEGRATED CABLE PROBE DESIGN FOR HIGH BANDWIDTH RF TESTING
    12.
    发明申请
    INTEGRATED CABLE PROBE DESIGN FOR HIGH BANDWIDTH RF TESTING 有权

    公开(公告)号：US20210132113A1

    公开(公告)日：2021-05-06

    申请号：US16493503

    申请日：2017-03-31

    Applicant: Intel Corporation

    Inventor： Chengqing Hu ,  Mayue Xie ,  Simranjit S. Khalsa ,  Deepak Goyal

    IPC: G01R1/067 ,  G01R31/28

    Abstract: An electrical characterization and fault isolation probe can include a cable, a connector, and a coating over a portion of the cable. The cable can have a first conductor having a first impedance, a second conductor having a second impedance, and a dielectric surrounding the first conductor and electrically isolating the first conductor from the second conductor. The connector can physically couple to, and be in electrical communication with, the cable. The connector can include a first electrical communication pathway and a second electrical communication pathway. The first electrical communication pathway can be electrically isolated from the second electrical communication pathway. The first electrical communication pathway can be in electrical communication with the first conductor. The second electrical communication pathway can be in electrical communication with the second conductor. The connector can have a fifth impedance.

    Electronic assembly using bismuth-rich solder
    13.
    发明授权
    Electronic assembly using bismuth-rich solder 有权

    公开(公告)号：US10361167B2

    公开(公告)日：2019-07-23

    申请号：US15762837

    申请日：2015-09-25

    Applicant: Intel Corporation

    Inventor： Pilin Liu ,  Purushotham Kaushik Muthur Srinath ,  Deepak Goyal

    IPC: H01L23/00 ,  H01L23/48 ,  B23K35/26 ,  B23K35/02 ,  H01L21/768

    Abstract: Some forms relate to an electronic assembly includes a first substrate that has a copper pad mounted to the first substrate. The electronic assembly further includes a second substrate that includes a copper redistribution layer mounted on the second substrate. The electronic assembly further includes bismuth-rich solder that includes 10-40 w.t. % tin. The bismuth-rich solder is electrically engaged with the copper pad and the copper redistribution layer. In some forms, the copper redistribution layer is another copper pad. The first substrate may include a memory die and the second substrate may include a logic die. In other forms, the first and second substrates may be part of a variety of different electronic components. The types of electronic components that are associated with the first and second substrates will depend on part on the application where the electronic assembly is be utilized (among other factors).

    Inline measurement of molding material thickness using terahertz reflectance
    14.
    发明授权
    Inline measurement of molding material thickness using terahertz reflectance 有权
    使用太赫兹反射率在线测量成型材料厚度

    公开(公告)号：US09508610B2

    公开(公告)日：2016-11-29

    申请号：US14499120

    申请日：2014-09-27

    Applicant: INTEL CORPORATION

    Inventor： Shuhong Liu ,  Nilanjan Z. Ghosh ,  Zhiyong Wang ,  Deepak Goyal ,  Shripad Gokhale ,  Jieping Zhang

    IPC: H01L21/66 ,  G01B11/06 ,  H01L23/31 ,  H01L23/00

    CPC classification number: H01L22/12 ,  G01B11/06 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/97 ,  H01L2224/16227 ,  H01L2224/97 ,  H01L2924/15331 ,  H01L2924/1815 ,  H01L2924/37001 ,  H01L2224/81

    Abstract: A method including emitting a terahertz beam from a light source at a layer of molding material; detecting a reflectance of the beam; and determining a thickness of the layer of molding material. A system including a panel supporter operable to support a panel including a plurality of substrates arranged in a planar array; a light source operable to emit a terahertz beam at a panel on the panel supporter; a detector operable to detect a reflection of a terahertz beam emitted at a panel; and a processor operable to determine a thickness of a material on the panel based on a time delay for an emitted terahertz beam to be detected by the detector.

    Abstract translation: 一种包括在成型材料层从光源发射太赫兹光束的方法; 检测光束的反射率; 并确定成型材料层的厚度。 一种包括面板支撑件的系统，其可操作以支撑包括布置在平面阵列中的多个基板的面板; 光源，其可操作以在所述面板支撑件上的面板处发射太赫兹光束; 检测器，用于检测在面板上发射的太赫兹波束的反射; 以及处理器，其可操作以基于由检测器检测的发射的太赫兹光束的时间延迟来确定面板上的材料的厚度。

    MICROELECTRONIC ASSEMBLIES INCLUDING A THERMAL INTERFACE MATERIAL
    16.
    发明申请
    MICROELECTRONIC ASSEMBLIES INCLUDING A THERMAL INTERFACE MATERIAL 审中-公开

    公开(公告)号：US20200006192A1

    公开(公告)日：2020-01-02

    申请号：US16019899

    申请日：2018-06-27

    Applicant: Intel Corporation

    Inventor： Peng Li ,  Sergio Antonio Chan Arguedas ,  Yongmei Liu ,  Deepak Goyal ,  Ken Hackenberg

    IPC: H01L23/42 ,  H01L23/373 ,  H01L23/367

    Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a die having a first surface and an opposing second surface, wherein the first surface of the die is coupled to the second surface of the package substrate; a cooling apparatus thermally coupled to the second surface of the die; and a thermal interface material (TIM) between the second surface of the die and the cooling apparatus, wherein the TIM includes an indium alloy having a liquidus temperature equal to or greater than about 245 degrees Celsius.

    Detection of defect in die
    20.
    发明授权
    Detection of defect in die 有权
    检测模具中的缺陷

    公开(公告)号：US09291576B2

    公开(公告)日：2016-03-22

    申请号：US14329686

    申请日：2014-07-11

    Applicant: Intel Corporation

    Inventor： Mario Pacheco ,  Deepak Goyal

    IPC: G01J4/00 ,  G01N21/95 ,  H01L21/67 ,  G01N21/88 ,  G01N21/21

    CPC classification number: G01N21/9505 ,  G01N21/21 ,  G01N21/8806 ,  G01N2021/216 ,  G01N2201/0612 ,  H01L21/67288

    Abstract: Generally discussed herein are systems, apparatuses, and methods that can detect a defect in a die. According to an example, a method can include transmitting a first beam of light with a wavelength and optical power configured to produce a reflected beam with at least one milli-Watt of power, linearly polarizing the first beam of light in a specific direction, circularly polarizing the linearly polarized light by a quarter wavelength to create circularly polarized light, directing the circularly polarized light to a device under test, linearly polarizing light reflected off the device under test by a quarter wavelength, or creating an image of the linearly polarized light reflected off the device under test.

    Abstract translation: 这里通常讨论的是可以检测模具中的缺陷的系统，装置和方法。 根据一个示例，一种方法可以包括传输具有波长和光功率的第一光束，其被配置为产生具有至少一毫瓦功率的反射光束，以沿着特定方向将第一光束线性偏振 将线性偏振光偏振四分之一波长以产生圆偏振光，将圆偏振光引导到被测器件，将被测器件反射的光线线偏振四分之一波长，或产生反射的线性偏振光的图像 关闭被测设备。

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