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公开(公告)号：US20170076440A1
公开(公告)日：2017-03-16
申请号：US15342432
申请日：2016-11-03
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Alexander Kuznetsov , Gregory R. Brady , Andrei V. Shchengrov , Noam Sapiens , John J. Hench
CPC classification number: G06T7/0004 , G01B2210/56 , G01N21/211 , G01N21/255 , G01N21/84 , G01N21/8422 , G01N2201/06113 , G03F7/70625 , G03F7/70633 , G06T7/60 , G06T2207/10004 , G06T2207/30148
Abstract: Disclosed are apparatus and methods for determining a structure or process parameter value of a target of interest on a semiconductor wafer. A plurality of collection patterns are defined for a spatial light beam controller positioned at a pupil image plane of a metrology tool. For each collection pattern, a signal is collected from a sensor of the metrology tool, and each collected signal represents a combination of a plurality of signals that the spatial light beam controller samples, using each collection pattern, from a pupil image of the target of interest. The collection patterns are selected so that the pupil image is reconstructable based on the collection patterns and their corresponding collection signals. The collected signal for each of the collection patterns is analyzed to determine a structure or process parameter value for the target of interest.
Abstract translation: 公开了用于确定半导体晶片上的感兴趣的目标的结构或过程参数值的装置和方法。 为位于计量工具的光瞳像平面处的空间光束控制器定义了多个收集图案。 对于每个收集图案，从计量工具的传感器收集信号，并且每个收集的信号表示多个信号的组合，空间光束控制器使用每个收集模式从目标的瞳孔图像 利益。 选择收集图案，使得基于收集图案及其对应的收集信号可以重建瞳孔图像。 分析每个收集模式的收集信号，以确定感兴趣的目标的结构或过程参数值。
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12.发明申请公开(公告)号：US20160139032A1
公开(公告)日：2016-05-19
申请号：US14668879
申请日：2015-03-25
Applicant: KLA-Tencor Corporation
Inventor： Claudio Rampoldi , Barry Blasenheim , Alexander Kuznetsov , Shankar Krishnan , Andrei V. Shchegrov
CPC classification number: G01N21/211 , G01B11/0625 , G01B11/0641 , G01B2210/56 , G01N21/9501 , G01N2021/213
Abstract: An inspection system is provided that can include a reflectometer having a light source for projecting light, and a light splitter for receiving the light projected by the light source, transforming at least one aspect of the light, and projecting the light once transformed. The reflectometer further has an off-axis unobscured objective lens through which the light transformed by the light splitter passes to contact a fabricated component, and has a detector for detecting a result of the transformed light contacting the fabricated component. The inspection system can additionally, or alternatively, include an ellipsometer having a light source similar to the reflectometer, and further a polarizing element to polarize the light of the light splitter. The polarized light passes through an off-axis unobscured objective lens to contact a fabricated component, and a detector detects a result of the polarized light contacting the fabricated component.
Abstract translation: 提供了一种检查系统，其可以包括具有用于投射光的光源的反射计，以及用于接收由光源投影的光的光分离器，转化至少一个方面的光，并且一旦转换就投射光。 反射计进一步具有离轴未遮蔽的物镜，由光分离器变换的光穿过该物镜接触制造的部件，并具有检测器，用于检测与制造的部件接触的变形光的结果。 检查系统可另外地或替代地包括具有类似于反射计的光源的椭圆计，还有一个使光分离器的光偏振的偏振元件。 偏振光通过离轴未遮蔽的物镜接触制造的部件，并且检测器检测与制造的部件接触的偏振光的结果。
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公开(公告)号：US20140347666A1
公开(公告)日：2014-11-27
申请号：US14278224
申请日：2014-05-15
Applicant: KLA-Tencor Corporation
Inventor： Andrei Veldman , Andrei V. Shchegrov , Gregory Brady , Thaddeus Gerard Dziura , Stilian Ivanov Pandev , Alexander Kuznetsov
CPC classification number: G01N21/211 , G01B11/0625 , G01B11/0641 , G01B2210/56 , G01N21/9501 , G01N2021/213
Abstract: Methods and systems for evaluating the capability of a measurement system to track measurement parameters through a given process window are presented herein. Performance evaluations include random perturbations, systematic perturbations, or both to effectively characterize the impact of model errors, metrology system imperfections, and calibration errors, among others. In some examples, metrology target parameters are predetermined as part of a Design of Experiments (DOE). Estimated values of the metrology target parameters are compared to the known DOE parameter values to determine the tracking capability of the particular measurement. In some examples, the measurement model is parameterized by principal components to reduce the number of degrees of freedom of the measurement model. In addition, exemplary methods and systems for optimizing the measurement capability of semiconductor metrology systems for metrology applications subject to process variations are presented.
Abstract translation: 本文介绍了用于评估测量系统通过给定过程窗口跟踪测量参数的能力的方法和系统。 性能评估包括随机扰动，系统扰动或两者，以有效表征模型误差，计量系统缺陷和校准误差等的影响。 在一些示例中，度量目标参数被预先确定为实验设计（DOE）的一部分。 将度量目标参数的估计值与已知的DOE参数值进行比较，以确定特定测量的跟踪能力。 在一些示例中，测量模型由主要组件参数化，以减少测量模型的自由度数。 此外，提出了用于优化用于受过程变化的度量应用的半导体测量系统的测量能力的示例性方法和系统。
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14.发明授权Metrology systems and methods for high aspect ratio and large lateral dimension structures 有权高纵横比和大横向尺寸结构的计量系统和方法公开(公告)号：US08860937B1
公开(公告)日：2014-10-14
申请号：US13743304
申请日：2013-01-16
Applicant: KLA-Tencor Corporation
Inventor： Thaddeus Gerard Dziura , Xuefeng Liu , David Y. Wang , Jonathan Madsen , Alexander Kuznetsov , Johannes D. de Veer , Shankar Krishnan , Derrick Shaughnessy , Andrei Shchegrov
CPC classification number: G01N21/47 , G01B2210/56 , H01L22/12 , H01L2924/0002 , H01L2924/00
Abstract: Various metrology systems and methods for high aspect ratio and large lateral dimension structures are provided. One method includes directing light to one or more structures formed on a wafer. The light includes ultraviolet light, visible light, and infrared light. The one or more structures include at least one high aspect ratio structure or at least one large lateral dimension structure. The method also includes generating output responsive to light from the one or more structures due to the light directed to the one or more structures. In addition, the method includes determining one or more characteristics of the one or more structures using the output.
Abstract translation: 提供了用于高纵横比和大横向尺寸结构的各种计量系统和方法。 一种方法包括将光引导到在晶片上形成的一个或多个结构。 该光包括紫外光，可见光和红外光。 一个或多个结构包括至少一个高纵横比结构或至少一个大的横向尺寸结构。 该方法还包括响应于来自一个或多个结构的光而产生输出，这是由于指向一个或多个结构的光。 另外，该方法包括使用该输出确定一个或多个结构的一个或多个特性。
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15.发明申请公开(公告)号：US20180328868A1
公开(公告)日：2018-11-15
申请号：US15974962
申请日：2018-05-09
Applicant: KLA-Tencor Corporation
Inventor： Alexander Bykanov , Nikolay Artemiev , Joseph A. Di Regolo , Antonio Gellineau , Alexander Kuznetsov , Andrei Veldman , John Hench
IPC: G01N23/201 , H01L21/67 , G01N23/205 , H01L21/68 , G01N23/207 , H01L21/687
CPC classification number: G01N23/201 , G01N23/205 , G01N23/207 , G01N2223/6116 , H01L21/67259 , H01L21/67282 , H01L21/67288 , H01L21/681 , H01L21/68764
Abstract: Methods and systems for positioning a specimen and characterizing an x-ray beam incident onto the specimen in a Transmission, Small-Angle X-ray Scatterometry (T-SAXS) metrology system are described herein. A specimen positioning system locates a wafer vertically and actively positions the wafer in six degrees of freedom with respect to the x-ray illumination beam without attenuating the transmitted radiation. In some embodiments, a cylindrically shaped occlusion element is scanned across the illumination beam while the detected intensity of the transmitted flux is measured to precisely locate the beam center. In some other embodiments, a periodic calibration target is employed to precisely locate the beam center. The periodic calibration target includes one or more spatially defined zones having different periodic structures that diffract X-ray illumination light into distinct, measurable diffraction patterns.
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Patent Agency Ranking
公开(公告)号：US20180112968A1
公开(公告)日：2018-04-26
申请号：US15787789
申请日：2017-10-19
Applicant: KLA-Tencor Corporation
Inventor： Boxue Chen , Andrei Veldman , Alexander Kuznetsov , Andrei V. Shchegrov
IPC: G01B11/02 , G01B15/00 , G01N21/95 , G01N21/956 , G01N23/225 , G01N23/201
Abstract: Methods and systems for evaluating the geometric characteristics of patterned structures are presented. More specifically, geometric structures generated by one or multiple patterning processes are measured by two or more metrology systems in accordance with a hybrid metrology methodology. A measurement result from one metrology system is communicated to at least one other metrology systems to increase the measurement performance of the receiving system. Similarly, a measurement result from the receiving metrology system is communicated back to the sending metrology system to increase the measurement performance of the sending system. In this manner, measurement results obtained from each metrology system are improved based on measurement results received from other cooperating metrology systems. In some examples, metrology capability is expanded to measure parameters of interest that were previously unmeasurable by each metrology system operating independently. In other examples, measurement sensitivity is improved and parameter correlation is reduced.
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公开(公告)号：US20150046121A1
公开(公告)日：2015-02-12
申请号：US14449646
申请日：2014-08-01
Applicant: KLA-Tencor Corporation
Inventor： Thaddeus Gerard Dziura , Stilian Ivanov Pandev , Alexander Kuznetsov , Andrei V. Shchegrov
IPC: G01N21/956 , G01N21/95
CPC classification number: G01N21/956 , G01N21/9501 , G01N2201/12
Abstract: Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of spectra signals are measured from a particular structure of interest at a plurality of azimuth angles from one or more sensors of a metrology system. A difference spectrum is determined based on the spectra signals obtained for the azimuth angles. A quality indication of the particular structure of interest is determined and reported based on analyzing the difference spectrum.
Abstract translation: 公开了用于在半导体晶片上表征感兴趣的多个结构的装置和方法。 从测量系统的一个或多个传感器的多个方位角处，从感兴趣的特定结构测量多个频谱信号。 基于为方位角获得的谱信号确定差谱。 通过分析差异谱确定和报告感兴趣的特定结构的质量指示。
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公开(公告)号：US20130222795A1
公开(公告)日：2013-08-29
申请号：US13770202
申请日：2013-02-19
Applicant: KLA-Tencor Corporation
Inventor： Jonathan M. Madsen , Andrei V. Shchegrov , Michael Bakeman , Thaddeus Gerard Dziura , Alexander Kuznetsov , Bin-Ming (Benjamin) Tsai
IPC: G01N21/956
CPC classification number: G01N21/956 , G01B11/0625 , G01B11/0641 , G01B2210/56 , G03F7/70683 , H01L22/30
Abstract: Methods and systems for enhancing metrology sensitivity to particular parameters of interest are presented. Field enhancement elements (FEEs) are constructed as part of a specimen to enhance the measurement sensitivity of structures of interest present on the specimen. The design of the FEEs takes into account measurement goals and manufacturing design rules to make target fabrication compatible with the overall device fabrication process. Measurement of opaque materials, high-aspect ratio structures, structures with low-sensitivity, or mutually correlated parameters is enhanced by the addition of FEEs. Exemplary measurements include critical dimension, film thickness, film composition, and optical scatterometry overlay. In some examples, a target element includes different FEEs to improve the measurement of different structures of interest. In other examples, different target elements include different FEEs. In some other examples, field enhancement elements are shaped to concentrate an electric field in a thin film deposited over the FEE.
Abstract translation: 提出了用于增强对感兴趣的特定参数的度量敏感性的方法和系统。 场增强元件（FEE）被构造为样本的一部分，以增强样品上存在的感兴趣结构的测量灵敏度。 FEE的设计考虑了测量目标和制造设计规则，使目标制造与整个设备制造过程相兼容。 通过添加FEE，增强不透明材料，高纵横比结构，低灵敏度结构或相互关联的参数的测量。 示例性测量包括临界尺寸，膜厚度，膜组成和光学散射测量覆盖。 在一些示例中，目标元素包括不同的FEE以改善感兴趣的不同结构的测量。 在其他示例中，不同的目标元素包括不同的FEE。 在一些其他示例中，场增强元件被成形为将电场集中在沉积在FEE上的薄膜中。
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公开(公告)号：US11378451B2
公开(公告)日：2022-07-05
申请号：US15672120
申请日：2017-08-08
Applicant: KLA-Tencor Corporation
Inventor： Tianhan Wang , Aaron Rosenberg , Dawei Hu , Alexander Kuznetsov , Manh Dang Nguyen , Stilian Pandev , John Lesoine , Qiang Zhao , Liequan Lee , Houssam Chouaib , Ming Di , Torsten R. Kaack , Andrei V. Shchegrov , Zhengquan Tan
Abstract: A spectroscopic metrology system includes a spectroscopic metrology tool and a controller. The controller generates a model of a multilayer grating including two or more layers, the model including geometric parameters indicative of a geometry of a test layer of the multilayer grating and dispersion parameters indicative of a dispersion of the test layer. The controller further receives a spectroscopic signal of a fabricated multilayer grating corresponding to the modeled multilayer grating from the spectroscopic metrology tool. The controller further determines values of the one or more parameters of the modeled multilayer grating providing a simulated spectroscopic signal corresponding to the measured spectroscopic signal within a selected tolerance. The controller further predicts a bandgap of the test layer of the fabricated multilayer grating based on the determined values of the one or more parameters of the test layer of the fabricated structure.
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公开(公告)号：US11156548B2
公开(公告)日：2021-10-26
申请号：US15938270
申请日：2018-03-28
Applicant: KLA-TENCOR CORPORATION
Inventor： Manh Nguyen , Phillip Atkins , Alexander Kuznetsov , Liequan Lee , Natalia Malkova , Paul Aoyagi , Mikhail Sushchik , Dawei Hu , Houssam Chouaib
Abstract: A parameterized geometric model of a structure can be determined based on spectra from a wafer metrology tool. The structure can have geometry-induced anisotropic effects. Dispersion parameters of the structure can be determined from the parameterized geometric model. This can enable metrology techniques to measure nanostructures that have geometries and relative positions with surrounding structures that induce non-negligible anisotropic effects. These techniques can be used to characterize process steps involving metal and semiconductor targets in semiconductor manufacturing of, for example, FinFETs or and gate-all-around field-effect transistors.
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