公开(公告)号：US09997662B2

公开(公告)日：2018-06-12

申请号：US15249140

申请日：2016-08-26

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

IPC: H05B43/00 ,  H01L33/00 ,  H05B33/08 ,  H01L27/15 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  F21Y115/10 ,  F21V23/00

CPC classification number: H01L33/0041 ,  F21V23/003 ,  F21Y2115/10 ,  H01L27/15 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  H05B33/08

Abstract: Various embodiments of solid state transducer (“SST”) devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (MOS) capacitor, an active region operably coupled to the MOS capacitor, and a bulk semiconductor material operably coupled to the active region. The active region can include at least one quantum well configured to store first charge carriers under a first bias. The bulk semiconductor material is arranged to provide second charge carriers to the active region under the second bias such that the active region emits UV light.

公开(公告)号：US09728696B2

公开(公告)日：2017-08-08

申请号：US15019748

申请日：2016-02-09

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L33/62 ,  H01L21/78 ,  H01L27/15 ,  H01L33/38 ,  H01L27/04 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01L33/64 ,  H01L25/075 ,  H01L33/00 ,  H01L33/58

CPC classification number: H01L33/62 ,  H01L21/78 ,  H01L25/0753 ,  H01L27/04 ,  H01L27/156 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/58 ,  H01L33/64 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2933/0075

Abstract: Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

公开(公告)号：US09653654B2

公开(公告)日：2017-05-16

申请号：US15227198

申请日：2016-08-03

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Lifang Xu

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/00 ,  H01L33/42 ,  H01L33/06 ,  H01L33/32 ,  H01L33/50 ,  H01L33/56

CPC classification number: H01L33/382 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L33/502 ,  H01L33/56 ,  H01L2933/0016

Abstract: Solid-state radiation transducer (SSRT) devices having buried contacts that are at least partially transparent and associated systems and methods are disclosed herein. An SSRT device configured in accordance with a particular embodiment can include a radiation transducer including a first semiconductor material, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material. The SSRT device can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. The second contact can include a plurality of buried-contact elements electrically coupled to the second semiconductor material. Individual buried-contact elements can have a transparent portion directly adjacent to the second semiconductor material. The second contact can further include a base portion extending between the buried-contact elements, such as a base portion that is least partially planar and reflective.

公开(公告)号：US09601675B2

公开(公告)日：2017-03-21

申请号：US14926276

申请日：2015-10-29

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/62 ,  H01L33/06 ,  H01L33/08 ,  H01L33/50 ,  H01L33/58 ,  H01L33/44 ,  H01L33/64

CPC classification number: H01L33/62 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/44 ,  H01L33/501 ,  H01L33/504 ,  H01L33/58 ,  H01L33/647 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Vertical solid-state transducers (“SSTs”) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.

公开(公告)号：US09585206B2

公开(公告)日：2017-02-28

申请号：US15137596

申请日：2016-04-25

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

IPC: H05B33/08 ,  H01L33/00 ,  H01L33/32

CPC classification number: H05B33/0809 ,  H01L27/153 ,  H01L29/73 ,  H01L33/0025 ,  H01L33/32 ,  H05B33/0827

Abstract: Multi-junction solid-state transducer (SST) devices and associated systems and methods are disclosed herein. In several embodiments, for example, an SST system can include a first multi-junction SST chain having a first drive voltage, a first P-contact, and a first N-contact, and a second multi-junction SST chain having a second drive voltage, a second P-contact, and a second N-contact. The first and second multi-junction SST chains can be configured to be activated independently of each other. The SST system can further include a driver operably coupled to the first and second P- and N-contacts. The driver can be configured to activate the first multi-junction SST chain when voltage input is at least equal to the first drive voltage. When absolute voltage increases a predetermined voltage level, the driver can be configured to activate the second multi-junction SST chain or the first and second multi-junction SST chains.

Abstract translation: 本文公开了多结固态换能器（SST）装置及相关系统和方法。 在几个实施例中，例如，SST系统可以包括具有第一驱动电压的第一多结SST链，第一P接触和第一N接触，以及具有第二驱动的第二多结SST链 电压，第二P接触和第二N接触。 第一和第二多结SST链可被配置为独立地彼此激活。 SST系统还可以包括可操作地耦合到第一和第二P-和N-触点的驱动器。 当电压输入至少等于第一个驱动电压时，驱动器可以配置为激活第一个多结SST链。 当绝对电压增加预定电压电平时，驱动器可被配置为激活第二多结SST链或第一和第二多结SST链。

公开(公告)号：US20160211430A1

公开(公告)日：2016-07-21

申请号：US15082764

申请日：2016-03-28

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/00 ,  H01L33/32 ,  H01L31/02 ,  H01L31/0304

CPC classification number: H01L33/62 ,  H01L27/153 ,  H01L31/02005 ,  H01L31/03044 ,  H01L31/03048 ,  H01L33/0012 ,  H01L33/32 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

Abstract: High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.

Abstract translation: 本文公开了高电压固态换能器（SST）装置及相关系统和方法。 根据本技术的特定实施例的SST器件包括串联连接在第一和第二端子之间的载体衬底，第一端子，第二端子和多个SST晶粒管。 各个SST管芯可以包括具有p-n结，第一接触和第二接触的换能器结构。 换能器结构在第一区域和第二区域之间形成边界，载体衬底位于第一区域中。 第一和第二端子可以被配置为接收输出电压，并且每个SST管芯可以具有小于输出电压的正向结电压。

公开(公告)号：US20160211423A1

公开(公告)日：2016-07-21

申请号：US15083063

申请日：2016-03-28

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov

IPC: H01L33/50 ,  H01L33/32 ,  H01L33/14 ,  H01L33/18 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/502 ,  H01L33/007 ,  H01L33/06 ,  H01L33/08 ,  H01L33/14 ,  H01L33/18 ,  H01L33/32 ,  H01L2933/0041

Abstract: Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods are disclosed. A solid state radiative semiconductor structure in accordance with a particular embodiment includes a first region having a first value of a material characteristic and being positioned to receive radiation at a first wavelength. The structure can further include a second region positioned adjacent to the first region to emit radiation at a second wavelength different than the first wavelength. The second region has a second value of the material characteristic that is different than the first value, with the first and second values of the characteristic forming a potential gradient to drive electrons, holes, or both electrons and holes in the radiative structure from the first region to the second region. In a further particular embodiment, the material characteristic includes material polarization.

Abstract translation: 公开了用于固态照明装置的波长转换器，包括偏振增强载波捕获转换器，以及相关的系统和方法。 根据特定实施例的固态辐射半导体结构包括具有材料特性的第一值的第一区域，并且被定位成接收第一波长的辐射。 该结构还可以包括邻近第一区域定位的第二区域，以发射不同于第一波长的第二波长的辐射。 第二区域具有不同于第一值的材料特性的第二值，特征的第一和第二值形成电位梯度，以驱动来自第一个辐射结构的辐射结构中的电子，空穴或电子和空穴 区域到第二区域。 在另一特定实施例中，材料特性包括材料极化。

公开(公告)号：US20160020356A1

公开(公告)日：2016-01-21

申请号：US14850715

申请日：2015-09-10

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L33/00

CPC classification number: H01L33/62 ,  H01L21/78 ,  H01L25/0753 ,  H01L27/04 ,  H01L27/156 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/58 ,  H01L33/64 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2933/0075

Abstract: Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

公开(公告)号：US20150318388A1

公开(公告)日：2015-11-05

申请号：US14796974

申请日：2015-07-10

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Cem Basceri ,  Thomas Gehrke

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/205

CPC classification number: H01L29/42316 ,  H01L29/0603 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4175 ,  H01L29/7786 ,  H01L29/7787 ,  H01L2224/16227

Abstract: Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate.

Abstract translation: 本文公开了用于制造半导体器件的半导体器件和方法。 根据特定实施例配置的方法包括从外延衬底形成半导体材料的堆叠，其中半导体材料堆叠限定异质结，并且其中半导体材料和外延衬底的堆叠进一步限定主体区域，其包括 邻近外延衬底的半导体堆叠部分。 该方法还包括将半导体材料堆叠附接到载体，其中载体被配置为提供到异质结的信号路径。 该方法还包括通过去除外延衬底来暴露体区。

公开(公告)号：US09159896B2

公开(公告)日：2015-10-13

申请号：US14607839

申请日：2015-01-28

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Martin F. Schubert

IPC: H01L33/62 ,  H01L33/64 ,  H01L33/40 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/62 ,  H01L21/78 ,  H01L25/0753 ,  H01L27/04 ,  H01L27/156 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/58 ,  H01L33/64 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2933/0075

Abstract: Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

Abstract translation: 本文公开了固态换能器（“SST”）和具有埋地触点的垂直高压SST。 根据特定实施例的SST管芯可以包括在换能器结构的第一侧具有第一半导体材料的换能器结构，以及在换能器结构的第二侧的第二半导体材料。 SST还可以包括在第一侧上的多个第一触点并且电耦合到第一半导体材料，以及从第一侧延伸到第二半导体材料并电耦合到第二半导体材料的多个第二触点。 可以在至少一个第一接触和一个第二接触之间形成互连。 互连可以被多个封装材料覆盖。