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    Process for large-scale ammonothermal manufacturing of gallium nitride boules
    12.
    发明授权
    Process for large-scale ammonothermal manufacturing of gallium nitride boules 有权
    用于大规模氮热处理制造氮化镓颗粒的方法

    公开(公告)号：US08979999B2

    公开(公告)日：2015-03-17

    申请号：US12534844

    申请日：2009-08-03

    Applicant: Mark P. D'Evelyn

    Inventor： Mark P. D'Evelyn

    IPC: C30B7/10 ,  C30B29/40 ,  B01J3/00 ,  B01J3/04 ,  B01J3/06 ,  B30B11/00

    CPC classification number: C30B29/406 ,  B01J3/008 ,  B01J3/042 ,  B01J3/065 ,  B01J2203/0665 ,  B01J2203/068 ,  B30B11/002 ,  C30B7/10

    Abstract: A method for large-scale manufacturing of gallium nitride boules. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and grown ammonothermally. The seed orientation and mounting geometry are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus. The method is scalable up to very large volumes and is cost effective.

    Abstract translation: 一种大规模生产氮化镓颗粒的方法。 将大面积单晶种子板悬挂在机架中，与氨和矿化剂一起放置在大直径的高压釜或内部加热的高压装置中，并进行氨热生长。 选择种子取向和安装几何形状以提供有效利用种子板和高压釜或高压装置内的体积。 该方法可扩展到非常大的卷，并且具有成本效益。

    Method for growth of indium-containing nitride films
    14.
    发明授权
    Method for growth of indium-containing nitride films 有权
    含铟氮化物膜生长方法

    公开(公告)号：US08482104B2

    公开(公告)日：2013-07-09

    申请号：US13346507

    申请日：2012-01-09

    Applicant: Mark P. D'Evelyn ,  Christiane Poblenz ,  Michael R. Krames

    Inventor： Mark P. D'Evelyn ,  Christiane Poblenz ,  Michael R. Krames

    IPC: H01L29/20

    CPC classification number: H01L21/02433 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02499 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/2003

    Abstract: A method for growth of indium-containing nitride films is described, particularly a method for fabricating a gallium, indium, and nitrogen containing material. On a substrate having a surface region a material having a first indium-rich concentration is formed, followed by a second thickness of material having a first indium-poor concentration. Then a third thickness of material having a second indium-rich concentration is added to form a sandwiched structure which is thermally processed to cause formation of well-crystallized, relaxed material within a vicinity of a surface region of the sandwich structure.

    Abstract translation: 描述了含铟氮化物膜的生长方法，特别是制造镓，铟和含氮材料的方法。 在具有表面区域的基板上形成具有第一富铟浓度的材料，然后形成具有第一贫铟浓度的第二厚度的材料。 然后加入具有第二富铟浓度的第三厚度的材料以形成夹层结构，其被热处理以在夹层结构的表面区域附近形成良好结晶的松弛材料。

    Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
    16.
    发明授权
    Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride 有权
    氮化镓大规模制造中晶种利用的装置和方法

    公开(公告)号：US08430958B2

    公开(公告)日：2013-04-30

    申请号：US12534843

    申请日：2009-08-03

    Applicant: Mark P. D'Evelyn

    Inventor： Mark P. D'Evelyn

    IPC: C30B11/00 ,  C30B7/00 ,  C30B21/02 ,  C30B28/06 ,  C30B35/00

    CPC classification number: C30B7/10 ,  C30B29/406 ,  Y10T117/10 ,  Y10T117/1096

    Abstract: An apparatus and associated method for large-scale manufacturing of gallium nitride. The apparatus comprises a large diameter autoclave or internally-heated high pressure vessel, a seed rack, and a raw material basket. Methods include effective means for utilization of seed crystals. The apparatus and methods are scalable up to very large volumes and are cost effective.

    Abstract translation: 一种用于大规模制造氮化镓的装置和相关方法。 该装置包括大直径高压釜或内部加热的高压容器，种子架和原料篮。 方法包括有效利用晶种的手段。 该设备和方法可扩展到非常大的体积，并且具有成本效益。

    Nitride Crystal with Removable Surface Layer and Methods of Manufacture
    18.
    发明申请
    Nitride Crystal with Removable Surface Layer and Methods of Manufacture 有权
    具有可移除表面层的氮化物晶体及其制造方法

    公开(公告)号：US20120178215A1

    公开(公告)日：2012-07-12

    申请号：US13425304

    申请日：2012-03-20

    Applicant: Mark P. D'Evelyn

    Inventor： Mark P. D'Evelyn

    IPC: H01L21/50 ,  H01L21/205

    CPC classification number: C30B29/403 ,  C30B7/105 ,  C30B23/025 ,  C30B25/18 ,  C30B33/06 ,  H01L24/81 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/11 ,  H01L2224/81005 ,  H01L2224/81224 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

    Abstract: A nitride crystal or wafer with a removable surface layer comprises a high quality nitride base crystal, a release layer, and a high quality epitaxial layer. The release layer has a large optical absorption coefficient at wavelengths where the base crystal is substantially transparent and may be etched under conditions where the nitride base crystal and the high quality epitaxial layer are not. The high quality epitaxial layer may be removed from the nitride base crystal by laser liftoff or by chemical etching after deposition of at least one epitaxial device layer. The nitride crystal with a removable surface layer is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.

    Abstract translation: 具有可移除表面层的氮化物晶体或晶片包括高质量氮化物基晶，释放层和高质量外延层。 释放层在基底基本上是透明的波长处具有大的光吸收系数，并且可以在不具有氮化物基底和高质量外延层的条件下进行蚀刻。 可以通过激光剥离或通过在沉积至少一个外延器件层之后的化学蚀刻从氮化物基底晶体去除高质量的外延层。 具有可移除表面层的氮化物晶体可用作发光二极管，激光二极管，晶体管，光电检测器，太阳能电池或用于氢发生的光电化学水分解的衬底。

    White light devices using non-polar or semipolar gallium containing materials and phosphors
    19.
    发明授权
    White light devices using non-polar or semipolar gallium containing materials and phosphors 有权
    使用非极性或半极性含镓材料和荧光体的白光器件

    公开(公告)号：US08124996B2

    公开(公告)日：2012-02-28

    申请号：US12534829

    申请日：2009-08-03

    Applicant: James W. Raring ,  Eric M. Hall ,  Mark P. D'Evelyn

    Inventor： James W. Raring ,  Eric M. Hall ,  Mark P. D'Evelyn

    IPC: H01L33/00

    CPC classification number: H01L33/502 ,  H01L33/16 ,  H01L33/32 ,  H01L33/54 ,  H01L33/58 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01037 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: A packaged light emitting device. The device includes a substrate member comprising a surface region and one or more light emitting diode devices overlying the surface region. In a specific embodiment, at least one of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The one or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission of one or more first wavelengths. At least at least one of the light emitting diode devices comprise a quantum well region, which is characterized by an electron wave function and a hole wave function. In a specific embodiment, the electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. In a specific embodiment, the device has a thickness of one or more entities formed overlying the one or more light emitting diode devices. The one or more entities are excited by the substantially polarized emission and emitting electromagnetic radiation of one or more second wavelengths.

    Abstract translation: 封装的发光器件。 该器件包括一个衬底构件，该衬底构件包括表面区域和覆盖在该表面区域上的一个或多个发光二极管器件。 在具体实施例中，发光二极管器件中的至少一个制造在含有半极性或非极性GaN的衬底上。 一个或多个发光二极管器件制造在半极性或非极性的含GaN衬底上发射基本上一个或多个第一波长的极化发射。 至少一个发光二极管器件包括量子阱区，其特征在于电子波函数和空穴波函数。 在具体实施例中，电子波函数和空穴波函数在量子阱区域的预定空间区域内基本上重叠。 在具体实施例中，该装置具有形成在一个或多个发光二极管装置上的一个或多个实体的厚度。 一个或多个实体被基本上极化的发射和发射一个或多个第二波长的电磁辐射激发。

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