公开(公告)号：US20140097441A1

公开(公告)日：2014-04-10

申请号：US13646307

申请日：2012-10-05

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Cem Basceri ,  Thomas Gehrke

IPC: H01L21/20 ,  H01L21/335 ,  H01L29/778 ,  H01L29/12

CPC classification number: H01L29/42316 ,  H01L29/0603 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4175 ,  H01L29/7786 ,  H01L29/7787 ,  H01L2224/16227

Abstract: Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate.

Abstract translation: 本文公开了用于制造半导体器件的半导体器件和方法。 根据特定实施例配置的方法包括从外延衬底形成半导体材料的堆叠，其中半导体材料堆叠限定异质结，并且其中半导体材料堆叠和外延衬底进一步限定包括 邻近外延衬底的半导体堆叠部分。 该方法还包括将半导体材料堆叠附接到载体，其中载体被配置为提供到异质结的信号路径。 该方法还包括通过去除外延衬底来暴露体区。

公开(公告)号：US10147727B2

公开(公告)日：2018-12-04

申请号：US15895587

申请日：2018-02-13

Applicant: Micron Technology, Inc.

Inventor： Jaydeb Goswami ,  Zailong Bian ,  Yushi Hu ,  Eric R. Blomiley ,  Jaydip Guha ,  Thomas Gehrke

IPC: H01L27/108 ,  H01L29/423 ,  H01L29/08 ,  H01L29/49 ,  H01L23/532 ,  H01L23/528

Abstract: Some embodiments include a conductive structure which has a first conductive material having a work function of at least 4.5 eV, and a second conductive material over and directly against the first conductive material. The second conductive material has a work function of less than 4.5 eV, and is shaped as an upwardly-opening container. The conductive structure includes a third conductive material within the upwardly-opening container shape of the second conductive material and directly against the second conductive material. The third conductive material is a different composition relative to the second conductive material. Some embodiments include wordlines, and some embodiments include transistors.

公开(公告)号：US20180175039A1

公开(公告)日：2018-06-21

申请号：US15895587

申请日：2018-02-13

Applicant: Micron Technology, Inc.

Inventor： Jaydeb Goswami ,  Zailong Bian ,  Yushi Hu ,  Eric R. Blomiley ,  Jaydip Guha ,  Thomas Gehrke

IPC: H01L27/108 ,  H01L29/423 ,  H01L23/532 ,  H01L29/08 ,  H01L29/49

CPC classification number: H01L27/10823 ,  H01L23/5283 ,  H01L23/53252 ,  H01L23/53261 ,  H01L23/53266 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/0847 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4966

Abstract: Some embodiments include a conductive structure which has a first conductive material having a work function of at least 4.5 eV, and a second conductive material over and directly against the first conductive material. The second conductive material has a work function of less than 4.5 eV, and is shaped as an upwardly-opening container. The conductive structure includes a third conductive material within the upwardly-opening container shape of the second conductive material and directly against the second conductive material. The third conductive material is a different composition relative to the second conductive material. Some embodiments include wordlines, and some embodiments include transistors.

公开(公告)号：US20180138182A1

公开(公告)日：2018-05-17

申请号：US15349808

申请日：2016-11-11

Applicant: Micron Technology, Inc.

Inventor： Jaydeb Goswami ,  Zailong Bian ,  Yushi Hu ,  Eric R. Blomiley ,  Jaydip Guha ,  Thomas Gehrke

IPC: H01L27/108 ,  H01L29/423 ,  H01L29/08 ,  H01L29/49 ,  H01L23/532

CPC classification number: H01L27/10823 ,  H01L23/5283 ,  H01L23/53252 ,  H01L23/53261 ,  H01L23/53266 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/0847 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4966

Abstract: Some embodiments include a conductive structure which has a first conductive material having a work function of at least 4.5 eV, and a second conductive material over and directly against the first conductive material. The second conductive material has a work function of less than 4.5 eV, and is shaped as an upwardly-opening container. The conductive structure includes a third conductive material within the upwardly-opening container shape of the second conductive material and directly against the second conductive material. The third conductive material is a different composition relative to the second conductive material. Some embodiments include wordlines, and some embodiments include transistors.

公开(公告)号：US09972628B1

公开(公告)日：2018-05-15

申请号：US15349808

申请日：2016-11-11

Applicant: Micron Technology, Inc.

Inventor： Jaydeb Goswami ,  Zailong Bian ,  Yushi Hu ,  Eric R. Blomiley ,  Jaydip Guha ,  Thomas Gehrke

IPC: H01L29/49 ,  H01L27/108 ,  H01L29/423 ,  H01L29/08 ,  H01L23/532

CPC classification number: H01L27/10823 ,  H01L23/5283 ,  H01L23/53252 ,  H01L23/53261 ,  H01L23/53266 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/0847 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4966

Abstract: Some embodiments include a conductive structure which has a first conductive material having a work function of at least 4.5 eV, and a second conductive material over and directly against the first conductive material. The second conductive material has a work function of less than 4.5 eV, and is shaped as an upwardly-opening container. The conductive structure includes a third conductive material within the upwardly-opening container shape of the second conductive material and directly against the second conductive material. The third conductive material is a different composition relative to the second conductive material. Some embodiments include wordlines, and some embodiments include transistors.

公开(公告)号：US20170288089A1

公开(公告)日：2017-10-05

申请号：US15631836

申请日：2017-06-23

Applicant: Micron Technology, Inc.

Inventor： Zaiyuan Ren ,  Thomas Gehrke

IPC: H01L33/00 ,  H01L33/16 ,  H01L33/32

CPC classification number: H01L33/0025 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32

Abstract: Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.

公开(公告)号：US20170104126A1

公开(公告)日：2017-04-13

申请号：US15385690

申请日：2016-12-20

Applicant: Micron Technology, Inc.

Inventor： Cem Basceri ,  Thomas Gehrke ,  Charles M. Watkins

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/50

CPC classification number: H01L33/0075 ,  H01L33/005 ,  H01L33/06 ,  H01L33/08 ,  H01L33/38 ,  H01L33/502 ,  H01L33/508 ,  H01L2933/0033 ,  H01L2933/0041

Abstract: Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.

公开(公告)号：US09620675B2

公开(公告)日：2017-04-11

申请号：US15005794

申请日：2016-01-25

Applicant: Micron Technology, Inc.

Inventor： Cem Basceri ,  Thomas Gehrke

IPC: H01L33/22 ,  H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/20 ,  H01L21/02 ,  H01L21/66

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647 ,  H01L22/22 ,  H01L33/007 ,  H01L33/025 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32

Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.

公开(公告)号：US09246051B2

公开(公告)日：2016-01-26

申请号：US14276163

申请日：2014-05-13

Applicant: Micron Technology, Inc.

Inventor： Cem Basceri ,  Thomas Gehrke

IPC: H01L33/04 ,  H01L33/02 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  H01L21/02

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647 ,  H01L22/22 ,  H01L33/007 ,  H01L33/025 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32

Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.

Abstract translation: 本文公开了固态照明装置和相关的制造方法。 在一个实施例中，固态照明装置包括在衬底材料的衬底表面上具有衬底表面和多个半球形晶粒硅（“HSG”）结构的衬底材料。 固态照明装置还包括在衬底材料上的半导体材料，其至少一部分在多个HSG结构之间。

公开(公告)号：US20150155440A1

公开(公告)日：2015-06-04

申请号：US14617423

申请日：2015-02-09

Applicant: Micron Technology, Inc.

Inventor： Xiaolong Fang ,  Lifang Xu ,  Tingkai Li ,  Thomas Gehrke

IPC: H01L33/32 ,  H01L33/00 ,  H01L21/66

CPC classification number: H01L33/32 ,  H01L21/78 ,  H01L22/10 ,  H01L22/32 ,  H01L22/34 ,  H01L23/544 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/48 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor growth substrates and associated systems and methods for die singulation are disclosed. A representative method for manufacturing semiconductor devices includes forming spaced-apart structures at a dicing street located between neighboring device growth regions of a substrate material. The method can further include epitaxially growing a semiconductor material by adding a first portion of semiconductor material to the device growth regions and adding a second portion of semiconductor material to the structures. The method can still further include forming semiconductor devices at the device growth regions, and separating the semiconductor devices from each other at the dicing street by removing the spaced-apart structures and the underlying substrate material at the dicing street.

Abstract translation: 公开了半导体生长衬底和用于芯片分离的相关系统和方法。 用于制造半导体器件的代表性方法包括在位于衬底材料的相邻器件生长区域之间的切割街道上形成间隔开的结构。 该方法还可以包括通过将半导体材料的第一部分添加到器件生长区域并将半导体材料的第二部分添加到该结构体来外延生长半导体材料。 该方法还可以进一步包括在器件生长区域处形成半导体器件，并且在切割街道处通过在切割街道处去除间隔开的结构和下面的衬底材料来将半导体器件彼此分离。