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    Display device with a plurality of separately operable pixels formed in a grid
    12.
    发明授权
    Display device with a plurality of separately operable pixels formed in a grid 有权

    公开(公告)号：US11121124B2

    公开(公告)日：2021-09-14

    申请号：US16347168

    申请日：2017-11-23

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Alexander F. Pfeuffer ,  Dominik Scholz

    IPC: H01L25/16 ,  H01L27/12 ,  H01L33/06 ,  H01L33/38 ,  H01L33/42 ,  H01L33/60

    Abstract: A display device is disclosed. In an embodiment a display device having a plurality of pixels separately operable from each other includes a semiconductor layer sequence including a first semiconductor layer, an active layer and a second semiconductor layer, a first contact structure contacting the first semiconductor layer and a second contact structure contacting the second semiconductor layer and at least one separating region extending through the first contact structure, the first semiconductor layer and the active layer into the second semiconductor layer, wherein the semiconductor layer sequence and the first contact structure have at least one first recess laterally adjacent with respect to a respective pixel, the first recess extending through the first contact structure, the first semiconductor layer and the active layer into the second semiconductor layer, and wherein the second contact structure includes second contacts extending through the at least one first recess.

    Method for producing a semiconductor chip and semiconductor chip
    13.
    发明授权
    Method for producing a semiconductor chip and semiconductor chip 有权

    公开(公告)号：US11050002B2

    公开(公告)日：2021-06-29

    申请号：US15765474

    申请日：2016-09-29

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Alexander F. Pfeuffer ,  Dominik Scholz

    IPC: H01L33/38 ,  H01L33/00 ,  H01L33/30 ,  H01L33/40 ,  H01L33/44

    Abstract: A method for producing a semiconductor chip and a semiconductor chip are disclosed. In an embodiment, the method includes providing a semiconductor layer sequence having a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer is formed as a p-conducting semiconductor region and the second semiconductor layer is formed as an n-conducting semiconductor region, or vice versa, forming at least one recess in the semiconductor layer sequence so that side surfaces of the first and second semiconductor layers are exposed, wherein the recess is multiple times wider than deep and applying an auxiliary layer for electrically contacting the second semiconductor layer, wherein the auxiliary layer at the side surfaces exposed.

    Arrangement Comprising a Plurality of Lighting Modules and Method for Producing an Arrangement Comprising a Plurality of Lighting Modules
    14.
    发明申请
    Arrangement Comprising a Plurality of Lighting Modules and Method for Producing an Arrangement Comprising a Plurality of Lighting Modules 审中-公开

    公开(公告)号：US20200251450A1

    公开(公告)日：2020-08-06

    申请号：US16622669

    申请日：2018-06-13

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Dominik Scholz ,  Siegfried Herrmann

    IPC: H01L25/075 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62

    Abstract: An arrangement having a plurality of lighting modules and a method for producing an arrangement having a plurality of lighting modules are disclosed. In an embodiment an arrangement includes a plurality of lighting modules held by a carrier, each lighting module having a plurality of optoelectronic components arranged in a first number of rows and a second number of columns, wherein the lighting modules include a respective first number of first electrodes and a respective second number of second electrodes, wherein the optoelectronic components of a respective row of the rows are electrically connected to one of the first electrodes of the respective lighting module, wherein the optoelectronic components of a respective column of the columns are electrically connected to one of the second electrodes of the respective lighting module, and wherein the carrier includes one third electrode per row and one fourth electrode per column, the electrodes being electrically contactable in each case from outside the carrier.

    OPTOELECTRONIC COMPONENT HAVING SIDE CONTACTS
    15.
    发明申请
    OPTOELECTRONIC COMPONENT HAVING SIDE CONTACTS 审中-公开

    公开(公告)号：US20190027666A1

    公开(公告)日：2019-01-24

    申请号：US16073605

    申请日：2017-01-26

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Dominik Scholz ,  Siegfried Herrmann

    IPC: H01L33/62 ,  H01L21/56 ,  H01L33/48 ,  H01L23/00

    CPC classification number: H01L33/62 ,  H01L21/568 ,  H01L24/04 ,  H01L33/486 ,  H01L2224/04105 ,  H01L2224/19 ,  H01L2924/18162 ,  H01L2933/0066

    Abstract: An optoelectronic component includes a light emitting semiconductor chip, including an emission side and comprising an underside, wherein the optoelectronic component is configured to emit light via the emission side, the optoelectronic component including an insulating layer, the light emitting semiconductor chip is embedded into the insulating layer, the light emitting semiconductor chip including two electrical contact locations, the contact locations face away from the emission side, a first and a second electrically conductive contact layer are provided, respectively, an electrically conductive contact layer electrically conductively connects to a contact location of the semiconductor chip, the electrically conductive contact layers are arranged in the insulating layer, the first electrically conductive contact layer adjoins a first side face of the optoelectronic component, and the second electrically conductive contact layer adjoins a second side face of the optoelectronic component.

    Semiconductor layering sequence for generating visible light and light emitting diode
    17.
    发明授权
    Semiconductor layering sequence for generating visible light and light emitting diode 有权

    公开(公告)号：US10134960B2

    公开(公告)日：2018-11-20

    申请号：US15533006

    申请日：2015-12-03

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Dominik Scholz ,  Martin Mandl ,  Ion Stoll ,  Martin Strassburg ,  Barbara Huckenbeck

    IPC: H01L33/08 ,  H01L33/50 ,  H01L33/16 ,  H01L33/24

    Abstract: In at least one embodiment, the semiconductor layering sequence (1) is designed for generating light and comprises semiconductor columns (2). The semiconductor columns (2) have a respective core (21) made of a semiconductor material of a first conductivity type, and a core shell (23) surrounding the core (21) made of a semiconductor material of a second conductivity type. There is an active zone (22) between the core (21) and the core shell (23) for generating a primary radiation by means of electroluminescence. A respective conversion shell (4) is placed onto the semiconductor columns (2), which conversion shell at least partially interlockingly surrounds the corresponding core shell (23), and which at least partially absorbs the primary radiation and converts same into a secondary radiation of a longer wavelength by means of photoluminescence. The conversion shells (4) which are applied to adjacent semiconductor columns (2), only incompletely fill an intermediate space between the semiconductor columns (2).

    Method for producing an optoelectronic semiconductor component, and optoelectronic semiconductor component
    19.
    发明授权
    Method for producing an optoelectronic semiconductor component, and optoelectronic semiconductor component 有权

    公开(公告)号：US10026868B2

    公开(公告)日：2018-07-17

    申请号：US15508899

    申请日：2015-09-02

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Isabel Otto ,  Alexander F. Pfeuffer ,  Dominik Scholz

    IPC: H01L33/00 ,  H01L33/08 ,  H01L33/38 ,  H01L25/16 ,  H01L21/3213 ,  H01L21/28 ,  H01L21/311 ,  H01L31/12 ,  H01L21/3065 ,  H01L21/461

    Abstract: A method is specified for producing an optoelectronic semiconductor component, comprising the following steps: A) providing a structured semiconductor layer sequence (21, 22, 23) having —a first semiconductor layer (21) with a base region (21c), at least one well (211), and a first cover region (21a) in the region of the well (211) facing away from the base surface (21c), —an active layer (23), and —a second semiconductor layer (22) on a side of the active layer (23) facing away from the first semiconductor layer (21), wherein —the active layer (23) and the second semiconductor layer (22) are structured jointly in a plurality of regions (221, 231) and each region (221, 231) forms, together with the first semiconductor layer (21), an emission region (3), B) simultaneous application of a first contact layer (41) on the first cover surface (21a) and a second contact layer (42) on a second cover surface (3a) of the emission regions (3) facing away from the first semiconductor layer (21) in such a way that —the first contact layer (41) and the second contact layer (42) are electrically separated from each other, and —the first contact layer (41) and the second contact layer (42) run parallel to each other.

    LASER COMPONENT AND METHOD OF PRODUCING SAME
    20.
    发明申请
    LASER COMPONENT AND METHOD OF PRODUCING SAME 审中-公开

    公开(公告)号：US20170310079A1

    公开(公告)日：2017-10-26

    申请号：US15516964

    申请日：2015-10-07

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Dominik Scholz

    IPC: H01S5/022 ,  H01S5/024

    CPC classification number: H01S5/02252 ,  H01L2224/16225 ,  H01L2924/16195 ,  H01S5/02208 ,  H01S5/02292 ,  H01S5/02469

    Abstract: A laser component has a housing, which includes a carrier having a cavity with a bottom surface and a sidewall, wherein the cavity widens starting from the bottom surface, the side wall is inclined relative to the bottom surface by an angle different from 45°, a laser chip, an emission direction of which is oriented parallel to the bottom surface, is arranged on the bottom surface in the cavity, a reflective element is arranged in the cavity and bears on an edge between the bottom surface and the side wall, a reflective surface of the reflective element defines an angle with the bottom surface of the cavity, and the emission direction defines an angle of 45° with the reflective surface of the reflective element.

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