公开(公告)号：US5289077A

公开(公告)日：1994-02-22

申请号：US826459

申请日：1992-01-27

Applicant: Ryuichi Ugajin

Inventor： Ryuichi Ugajin

IPC: H01J3/02 ,  H01J21/10 ,  H01J19/24 ,  H01J1/30

CPC classification number: H01J3/022 ,  H01J21/105

Abstract: A vacuum microelectronic transistor which can operate at a high speed and has a high mutual conductance. The vacuum microelectronic transistor comprises an emitter for emitting electrons therefrom, a collector for receiving electrons from the emitter, and a pair of gate electrodes for controlling arrival of electrons from the emitter to the collector. The emitter and collector are disposed in an encapsulated condition on a substrate such that electrons emitted from the emitter run straightforwardly in vacuum to the collector while the gate electrodes are located adjacent and across a route of such electrons from the emitter to the collector. Also, a process of manufacturing such vacuum microelectronic transistor is disclosed.

Abstract translation: 一种真空微电子晶体管，可以高速运转并具有很高的互导性。 真空微电子晶体管包括用于从其发射电子的发射器，用于从发射极接收电子的集电极和用于控制电子从发射极到达集电极的一对栅电极。 发射极和集电极以封装状态设置在基板上，使得从发射极发射的电子在真空中直接运行到集电极，同时栅电极位于这些电子相邻并跨过这些电子从发射极到集电极的路径。 此外，公开了制造这种真空微电子晶体管的工艺。

公开(公告)号：US5229320A

公开(公告)日：1993-07-20

申请号：US920845

申请日：1992-07-28

Applicant: Ryuichi Ugajin

Inventor： Ryuichi Ugajin

IPC: H01L21/20 ,  H01L21/335 ,  H01L29/06

CPC classification number: H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01L29/66469 ,  Y10S438/944 ,  Y10S438/962

Abstract: Disclosed is a method which enabled the precise formation of a group of quantum dots. A device which functions on the principle of a transmission type electron microscope is used to produce a beam of electrons which are passed through a thin crystal membrane in order to produce an electron beam diffraction image. The energy distribution of the diffracted electron beam is used to produce masks, enable epitaxial growth and dry etching involved with the microscopic fabrication operations. For example, a thin GaAs membrane is used to form a diffracted electron beam image on a GaAs layer formed on a substrate. Carbon is then supplied and used to form carbon layers on the the locations where the beam energy is strongest. These carbon layers are used as a mask which allow selective etching of the GaAs layer. An AlGaAs insulating layer is then epitaxially grown on the exposed surface portions of the AlGaAs substrate to fill the spaces between each of the quantum dot defining GaAs portions which project up from the AlGaAs substrate surface.

Abstract translation: 公开了一种能够精确地形成一组量子点的方法。 以透射型电子显微镜为原理起作用的器件用于产生通过薄晶体膜的电子束，以便产生电子束衍射图像。 衍射电子束的能量分布用于产生掩模，使得外延生长和干法蚀刻涉及微观制造操作。 例如，使用薄的GaAs膜在形成在衬底上的GaAs层上形成衍射电子束图像。 然后提供碳并用于在束能最强的位置上形成碳层。 这些碳层用作允许选择性蚀刻GaAs层的掩模。 然后在AlGaAs衬底的暴露的表面部分上外延生长AlGaAs绝缘层，以填充从AlGaAs衬底表面突起的每个量子点限定GaAs部分之间的空间。

公开(公告)号：US07113931B1

公开(公告)日：2006-09-26

申请号：US09787212

申请日：2000-07-14

Applicant: Ryuichi Ugajin ,  Yoshihiko Kuroki ,  Akira Ishibashi ,  Shintaro Hirata

Inventor： Ryuichi Ugajin ,  Yoshihiko Kuroki ,  Akira Ishibashi ,  Shintaro Hirata

IPC: G06E1/00 ,  G06E3/00 ,  G06F15/18 ,  G06G7/00 ,  G06N3/02

CPC classification number: G06N3/0418

Abstract: A fracture structure is grown from a plurality of starting points. A fractal structure, grown from respective starting points and interconnected by interactive growths, forms a neural network. A growth speed originated at a specific starting point is determined by the probability of a material reaching a grown portion from a remote location by means of a diffusion process and the probability of a growth promoting factor reaching a grown portion by means of a diffusion process from a portion grown from a starting point other than the specific one. Anisotropy is introduced into a space in which a fractal structure is to be grown, as required.

Abstract translation: 断裂结构从多个起点生长。 从相应起点生长并通过交互式增长相互联系的分形结构形成神经网络。 起始于特定起始点的生长速度由材料通过扩散过程从远程位置到达生长部分的概率以及生长促进因子通过扩散过程到达生长部分的概率来确定 从特定的起点开始生长的部分。 根据需要将各向异性引入其中将生长分形结构的空间中。

公开(公告)号：US06759676B2

公开(公告)日：2004-07-06

申请号：US09980314

申请日：2002-02-26

Applicant: Ryuichi Ugajin ,  Shintaro Hirata ,  Masakazu Ukita

Inventor： Ryuichi Ugajin ,  Shintaro Hirata ,  Masakazu Ukita

IPC: H01L5100

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  H01F1/0072 ,  H01F1/009 ,  H01L29/127 ,  H01L51/0595

Abstract: In a multiply-complexed one-dimensional structure having a hierarchical structure in which a linear structure as an element of a one-dimensional structure having a finite curvature is made of a thinner one-dimensional structure having a finite curvature, at least two layers of one-dimensional unit structures are bonded in at least one site. For example, in a multiply-twisted helix having a hierarchical structure in which a linear structure as an element of a spiral structure is made of a thinner spiral structure, at least two layers of the unit spiral structures are bonded in at least one site. Alternatively, in a multiply-looped ring structure having a hierarchical structure in which a linear structure as an element of a ring structure is made of a thinner ring structure, at least two layers of ring unit structures are bonded in at least one site.

Abstract translation: 在具有分层结构的多重复合的一维结构中，其中作为具有有限曲率的一维结构的元素的线性结构由具有有限曲率的较薄的一维结构制成，至少两层 一维单位结构结合在至少一个位点。 例如，在具有分层结构的多捻螺旋线中，作为螺旋结构的元件的线状结构由较薄的螺旋结构构成，至少两层的单位螺旋结构结合在至少一个位置。 或者，在具有层状结构的多环环形结构中，其中作为环结构的元件的线性结构由较薄的环结构制成，至少两层环单元结构键合在至少一个位点。

公开(公告)号：US5828090A

公开(公告)日：1998-10-27

申请号：US552879

申请日：1995-11-03

Applicant: Ryuichi Ugajin

Inventor： Ryuichi Ugajin

IPC: H01L29/06 ,  H01L29/12 ,  H01L29/66 ,  H01L29/762 ,  H01L31/0328 ,  H01L29/74 ,  H01L31/111

CPC classification number: B82Y10/00 ,  H01L29/125 ,  H01L29/127 ,  H01L29/762

Abstract: A charge transfer device comprises a quantum wire and a one-dimensional quantum dots array extending helically, for example, and including quantum dots which are aligned in close relation to couple with each other and to surround the quantum wire. By applying an external field within a plane normal to the quantum wire and by rotating the direction of the application of the external field, charges are transferred along the quantum wire.

Abstract translation: 电荷转移装置包括量子线和例如螺旋延伸的一维量子点阵列，并且包括彼此紧密相关地对齐并且围绕量子线的量子点。 通过在垂直于量子线的平面内施加外部场并通过旋转外部场的施加方向，电荷沿量子线传输。

公开(公告)号：US5608231A

公开(公告)日：1997-03-04

申请号：US683137

申请日：1996-07-18

Applicant: Ryuichi Ugajin ,  Toshiyuki Sameshima

Inventor： Ryuichi Ugajin ,  Toshiyuki Sameshima

IPC: H01L29/68 ,  H01L21/338 ,  H01L29/06 ,  H01L29/12 ,  H01L29/772 ,  H01L29/778 ,  H01L29/80 ,  H01L29/812 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: B82Y10/00 ,  H01L29/127 ,  H01L29/772

Abstract: A field effect transistor has a quantum dot array in its channel region. The quantum dot array is composed of a plurality of quantum dots arranged adjacent to each other on a common plane. Each quantum dot may be made of heterojunction of compound semiconductors or junction of a semiconductor and an insulator. The field effect transistor has a differential negative resistance.

Abstract translation: 场效应晶体管在其沟道区域中具有量子点阵列。 量子点阵列由公共平面上彼此相邻布置的多个量子点组成。 每个量子点可以由化合物半导体或半导体与绝缘体的结的异质结构成。 场效应晶体管具有差分负电阻。

公开(公告)号：US5430309A

公开(公告)日：1995-07-04

申请号：US172734

申请日：1993-12-27

Applicant: Ryuichi Ugajin

Inventor： Ryuichi Ugajin

IPC: H01L29/80 ,  B82Y10/00 ,  G02F1/017 ,  G06E3/00 ,  H01L29/06 ,  H01L29/12 ,  H01L29/76 ,  H01L31/0352 ,  H01L49/00 ,  H01L27/12 ,  G11C7/00 ,  H01S3/18 ,  H01S3/19

CPC classification number: H01L31/0352 ,  B82Y10/00 ,  B82Y20/00 ,  G02F1/017 ,  G06E3/005 ,  H01L29/127 ,  H01L29/7613 ,  G02F2001/01791 ,  H01L33/06

Abstract: A data processing system formed of a collective element of quantum boxes including an electrode and a plurality of quantum boxes which respectively have a barrier layer made of the first semiconductor on the electrode and a well layer made of a second semiconductor adjacent to the barrier layer. The first semiconductor has an electron affinity .PHI..sub.B and an energy gap E.sub.gB. The second semiconductor has an electron affinity .phi..sub.W and an energy gap E.sub.gW. The equations .phi..sub.W >.phi..sub.B and .phi..sub.W +E.sub.gW >.phi..sub.B +E.sub.gB are simultaneously satisfied.

Abstract translation: 一种数据处理系统，由包括电极和多个量子盒的量子盒的集合元件形成，该多个量子盒分别具有由电极上的第一半导体制成的阻挡层和与阻挡层相邻的第二半导体制成的阱层。 第一半导体具有电子亲和力PHI B和能隙EgB。 第二半导体具有电子亲和力phi和能隙EgW。 同时满足方程phi W> phi B和phi W + EgW> phi B + EgB。

公开(公告)号：US5294807A

公开(公告)日：1994-03-15

申请号：US894580

申请日：1992-06-05

Applicant: Ryuichi Ugajin ,  Kenji Funato

Inventor： Ryuichi Ugajin ,  Kenji Funato

IPC: H01L29/80 ,  H01L29/12 ,  H01L29/775 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40 ,  H01S5/34 ,  H01L29/161 ,  H01L29/205

CPC classification number: B82Y20/00 ,  B82Y10/00 ,  H01L29/125 ,  H01L29/127 ,  H01L29/775 ,  H01S5/341 ,  H01S5/3412

Abstract: In quantum effect devices using quantum dots, a novel quantum effect device which controls the probability of tunnel transition of electrons among quantum dots to obtain quantum effects such as band gap modulation. i-GaAs layers serving as the quantum dots are formed on an n-AlGaAs substrate and, further, n-AlGaAs layers are formed as electron supply layers on the i-GaAs layers. By this double heterojunction structure, channels are formed in the i-GaAs layers near the two junction surfaces sandwiching the layers. On the other hand, a potential barrier layer comprised of an i-AlGaAs layer with a small barrier height with respect to the quantum dots and an SiO.sub.2 layer with a large barrier height laminated together is formed between the quantum dots. The position of the lamination interface in the potential barrier layer is set to a height enabling the two layers to contact the quantum dots. The magnitude of the electric field applied from the control electrode to the quantum dots is used to select one of the two channels. The band gap changes according to the change of the probability of tunnel transition at this time. If the change in the band gap is, for example, converted to a change in light emission wavelength, a variable wavelength type semiconductor laser device can be constructed.

Abstract translation: 在使用量子点的量子效应器件中，一种新颖的量子效应器件，其控制量子点之间电子的隧道转变的可能性，以获得诸如带隙调制之类的量子效应。 在n-AlGaAs衬底上形成用作量子点的i-GaAs层，并且在i-GaAs层上形成n-AlGaAs层作为电子供给层。 通过这种双异质结结构，在夹着层的两个接合面附近的i-GaAs层中形成沟道。 另一方面，在量子点之间形成有由相对于量子点具有小势垒高度的i-AlGaAs层和层叠有较大势垒高度的SiO 2层构成的势垒层。 将势垒层中的层压界面的位置设定为能够使两层与量子点接触的高度。 使用从控制电极施加到量子点的电场的大小来选择两个通道中的一个。 根据隧道过渡概率的变化，带隙随时间而变化。 如果带隙的变化例如被转换为发光波长的变化，则可以构造可变波长型半导体激光器件。

公开(公告)号：US07101434B2

公开(公告)日：2006-09-05

申请号：US10030857

申请日：2001-05-22

Applicant: Ryuichi Ugajin

Inventor： Ryuichi Ugajin

IPC: C30B25/04

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  H01F1/0036 ,  H01F41/30 ,  H01L49/00

Abstract: A fractal structure is formed to have a plurality of regions different in fractal dimension characterizing the self-similarity. Especially in a stellar fractal structure, a region with a low fractal dimension is formed around a core with a high fractal dimension. By adjusting the ratios in volume of these regions relative to the entire fractal structure, the nature of phase transition occurring in the fractal structure, such as a magnetization curve of Mott transition or ferromagnetic phase transition, quantum chaos in the electron state, or the like. For enhancing the controllability, the fractal dimension of the core is preferably larger than 2.7 and the fractal dimension of the region around the core is preferably smaller than 2.3.

公开(公告)号：US06952019B2

公开(公告)日：2005-10-04

申请号：US10781283

申请日：2004-02-18

Applicant: Ryuichi Ugajin

Inventor： Ryuichi Ugajin

IPC: H01L29/06 ,  H01L21/261 ,  H01L29/205 ,  H01L29/66 ,  H01L29/88 ,  H01L31/072

CPC classification number: H01L29/205 ,  H01L21/261 ,  H01L29/66 ,  H01L29/88

Abstract: An electron device which controls quantum chaos wherein a quantum chaos property is controlled extensively and externally is provided. The electron device which controls quantum chaos is manufactured by using a single material. A heterojunction provided with a first region having an electron system characterized by quantum chaos and a second region having an electron system characterized by integrability is formed. The first region and the second region are adjacent to each other, and the heterojunction is capable of exchanging electrons between the first region and the second region. A quantum chaos property of an electron system in a system formed of the first region and the second region is controlled by applying to the heterojunction an electric field having a component perpendicular to at least a junction surface.