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公开(公告)号：US20140339566A1
公开(公告)日：2014-11-20
申请号：US14364281
申请日：2012-12-13
Applicant: Seoul Viosys Co., Ltd.
Inventor： Won Cheol Seo , Dae Sung Cho , Chung Hoon Lee , Ki Bum Nam
CPC classification number: H01L33/32 , H01L33/007 , H01L33/0075 , H01L33/025 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/42
Abstract: Disclosed are a semiconductor device and a method of fabricating the same. The method includes forming a first GaN layer, a sacrificial layer and a second GaN layer on a GaN substrate, wherein the sacrificial layer has a bandgap narrower than those of the GaN layers; forming a groove penetrating the second GaN layer and the sacrificial layer; growing GaN-based semiconductor layers on the second GaN layer to form a semiconductor stack; forming a support substrate on the semiconductor stack; and removing the GaN substrate from the semiconductor stack by etching the sacrificial layer. Accordingly, since the sacrificial layer is etched using the groove, the support substrate can be separated from the semiconductor stack without damaging the support substrate.
Abstract translation: 公开了一种半导体器件及其制造方法。 该方法包括在GaN衬底上形成第一GaN层，牺牲层和第二GaN层，其中该牺牲层具有窄于GaN层的带隙; 形成贯穿所述第二GaN层和所述牺牲层的沟槽; 在第二GaN层上生长GaN基半导体层以形成半导体堆叠; 在所述半导体堆叠上形成支撑衬底; 以及通过蚀刻所述牺牲层从所述半导体堆叠移除所述GaN衬底。 因此，由于使用凹槽蚀刻牺牲层，所以支撑基板可以与半导体叠层分离，而不会损坏支撑基板。
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公开(公告)号：US10418514B2
公开(公告)日：2019-09-17
申请号：US15643403
申请日：2017-07-06
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Kwang Joong Kim , Chang Suk Han , Kyung Hee Ye , Seung Kyu Choi , Ki Bum Nam , Nam Yoon Kim , Kyung Hae Kim , Ju Hyung Yoon
Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.
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13.发明授权公开(公告)号：US09882085B2
公开(公告)日：2018-01-30
申请号：US15040969
申请日：2016-02-10
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jeong Hun Heo , Joo Won Choi , Choong Min Lee , Su Jin Shin , Ki Bum Nam , Yu Dae Han , A Ram Cha Lee
CPC classification number: H01L33/24 , H01L21/0243 , H01L21/02488 , H01L21/02494 , H01L21/0254 , H01L21/02664 , H01L29/0657 , H01L33/0075 , H01L33/0079 , H01L33/0095 , H01L33/025 , H01L33/20 , H01L33/22
Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.
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公开(公告)号：US20170069799A1
公开(公告)日：2017-03-09
申请号：US15355219
申请日：2016-11-18
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk IM , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.
Abstract translation: 一种发光二极管，包括支撑衬底，设置在支撑衬底上并包括p型化合物半导体层的半导体堆叠，有源层和n型化合物半导体层，设置在支撑衬底之间的反射金属层 所述反射金属层与所述半导体叠层的p型化合物半导体层欧姆接触，并且包括暴露所述半导体叠层的一部分的凹槽，设置在所述支撑基板和所述半导体叠层之间的绝缘层，以及 设置在所述槽中，以及第一电极，所述第一电极包括第一电极焊盘和第一电极延伸部，并且与所述第一电极延伸部连接到所述第一电极焊盘的所述半导体堆叠的所述n型化合物半导体层接触， 电极延伸沿着发光二极管的外边界形成。
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公开(公告)号：US09236533B2
公开(公告)日：2016-01-12
申请号：US14368268
申请日：2012-12-21
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.
Abstract translation: 公开了一种发光二极管及其制造方法。 根据本发明的一个方面的发光二极管包括：第一导电覆层; 在第一导电覆层中配置的折射率不同于第一导电覆层的折射率的光散射图案; 位于第一导电覆层下方的有源层; 位于有源层下方的第二导电覆层; 第一电极，被配置为电连接到所述第一导电包覆层; 以及第二电极，被配置为电连接到第二导电包覆层。 光散射图可以提高光提取效率。
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Patent Agency Ranking
公开(公告)号：US09209358B2
公开(公告)日：2015-12-08
申请号：US14365370
申请日：2012-12-12
Applicant: Seoul Viosys Co., Ltd.
Inventor： Won Cheol Seo , Dae Sung Cho , Chung Hoon Lee , Ki Bum Nam
CPC classification number: H01L33/22 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/16 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/46 , H01L2933/0016 , H01L2933/0058 , H01L2933/0091
Abstract: Disclosed are a semiconductor device and a method of fabricating the same. A light emitting diode (LED) includes a conductive substrate, and a gallium nitride (GaN)-based semiconductor stack positioned on the conductive substrate. The semiconductor stack includes an active layer that is a semi-polar semiconductor layer. Accordingly, it is possible to provide an LED having improved light emitting efficiency.
Abstract translation: 公开了一种半导体器件及其制造方法。 发光二极管（LED）包括导电衬底和位于导电衬底上的基于氮化镓（GaN）的半导体叠层。 半导体堆叠包括作为半极性半导体层的有源层。 因此，可以提供具有改善的发光效率的LED。
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公开(公告)号：US20150221822A1
公开(公告)日：2015-08-06
申请号：US14690036
申请日：2015-04-17
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kwang Joong Kim , Chang Suk Han , Kyung Hee Ye , Seung Kyu Choi , Ki Bum Nam , Nam Yoon Kim , Kyung Hae Kim , Ju Hyung Yoon
CPC classification number: H01L33/06 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/0025 , H01L33/007 , H01L33/025 , H01L33/04 , H01L33/32
Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the super lattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.
Abstract translation: 本发明的示例性实施例公开了一种发光二极管，其包括掺杂有硅的n型接触层，p型接触层，设置在n型接触层和p型接触层之间的有源区，超晶格 所述超晶格层包括多个层，设置在所述超晶格层和所述n型接触层之间的未掺杂的中间层以及设置在所述未掺杂的中间层之间的电子增强层 层和超晶格层。 只有最靠近有源区的超晶格层的最后一层掺杂有硅，并且最终层的硅掺杂浓度高于n型接触层的掺杂浓度。
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18.发明申请METHOD FOR SEPARATING EPITAXIAL LAYERS AND GROWTH SUBSTRATES, AND SEMICONDUCTOR DEVICE USING SAME 有权用于分离外延层和生长衬底的方法以及使用其的半导体器件公开(公告)号：US20150069418A1
公开(公告)日：2015-03-12
申请号：US14386775
申请日：2013-03-19
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jeong Hun Heo , Joo Won Choi , Choong Min Lee , Su Jin Shin , Ki Bum Nam , Yu Dae Han , A Ram Cha Lee
CPC classification number: H01L33/24 , H01L21/0243 , H01L21/02488 , H01L21/02494 , H01L21/0254 , H01L21/02664 , H01L29/0657 , H01L33/0075 , H01L33/0079 , H01L33/0095 , H01L33/025 , H01L33/20 , H01L33/22
Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.
Abstract translation: 本发明涉及用于分离外延层和生长衬底的方法以及使用其的半导体器件。 根据本发明，提供一种半导体器件，其包括支撑衬底和设置在支撑衬底上的多个半导体层，其中半导体层的最上层具有不均匀粗糙度的表面。
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公开(公告)号：US20140361247A1
公开(公告)日：2014-12-11
申请号：US14467470
申请日：2014-08-25
Applicant: SEOUL VIOSYS CO., LTD. , MITSUBISHI CHEMICAL CORPORATION
Inventor： Seung Kyu CHOI , Chae Hon Kim , Jung Whan Jung , Ki Bum Nam , Kenji Shimoyama , Kaori Kurihara
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/32
Abstract: Disclosed herein is a light emitting diode (LED) including: a gallium nitride substrate; a gallium nitride-based first contact layer disposed on the gallium nitride substrate; a gallium nitride-based second contact layer; an active layer having a multi-quantum well structure and disposed between the first and second contact layers; and a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer. By employing the gallium nitride substrate, the crystallinity of the semiconductor layers can be improved, and in addition, by disposing the super-lattice layer between the first contact layer and the active layer, a crystal defect that may be generated in the active layer can be prevented.
Abstract translation: 本文公开了一种发光二极管（LED），包括：氮化镓衬底; 设置在氮化镓衬底上的基于氮化镓的第一接触层; 氮化镓基第二接触层; 具有多量子阱结构并设置在第一和第二接触层之间的有源层; 以及具有多层结构并设置在第一接触层和有源层之间的超晶格层。 通过使用氮化镓衬底，可以提高半导体层的结晶度，另外通过在第一接触层和有源层之间设置超晶格层，可以在有源层中产生的晶体缺陷可以 被阻止
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公开(公告)号：US20140353679A1
公开(公告)日：2014-12-04
申请号：US14365370
申请日：2012-12-12
Applicant: Seoul Viosys Co., Ltd.
Inventor： Won Cheol Seo , Dae Sung Cho , Chung Hoon Lee , Ki Bum Nam
CPC classification number: H01L33/22 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/16 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/46 , H01L2933/0016 , H01L2933/0058 , H01L2933/0091
Abstract: Disclosed are a semiconductor device and a method of fabricating the same. A light emitting diode (LED) includes a conductive substrate, and a gallium nitride (GaN)-based semiconductor stack positioned on the conductive substrate. The semiconductor stack includes an active layer that is a semi-polar semiconductor layer. Accordingly, it is possible to provide an LED having improved light emitting efficiency.
Abstract translation: 公开了一种半导体器件及其制造方法。 发光二极管（LED）包括导电衬底和位于导电衬底上的基于氮化镓（GaN）的半导体叠层。 半导体堆叠包括作为半极性半导体层的有源层。 因此，可以提供具有改善的发光效率的LED。
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