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    LIGHT-EMITTING DIODE
    12.
    发明申请
    LIGHT-EMITTING DIODE 有权

    公开(公告)号：US20240421261A1

    公开(公告)日：2024-12-19

    申请号：US18722165

    申请日：2022-11-17

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Se Hee OH ,  Kyoung Wan KIM ,  Hae Yu KIM

    IPC: H01L33/46

    Abstract: A light-emitting diode according to an embodiment comprises: a substrate; a first conductive-type semiconductor layer disposed on the substrate; a mesa disposed on the first conductive-type semiconductor layer and including an active layer and a second conductive-type semiconductor layer; an ohmic contact layer disposed on the second conductive-type semiconductor layer and formed by islands which are spaced apart from each other; a dielectric layer covering the ohmic contact layer and having openings through which the respective islands are exposed; a metal reflective layer covering the dielectric layer and electrically connected to the islands through the openings of the dielectric layer; a lower insulating layer covering the metal reflective layer and having an opening through which the metal reflective layer is exposed; and first and second bump pads disposed on the lower insulating layer and electrically connected to the first and second conductive-type semiconductor layers, respectively.

    LIGHT EMITTING DIODE WITH HIGH EFFICIENCY
    13.
    发明申请
    LIGHT EMITTING DIODE WITH HIGH EFFICIENCY 有权

    公开(公告)号：US20220165914A1

    公开(公告)日：2022-05-26

    申请号：US17586804

    申请日：2022-01-28

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Keum Ju LEE ,  Seom Geun LEE ,  Kyoung Wan KIM ,  Yong Woo RYU ,  Mi Na JANG

    IPC: H01L33/14 ,  H01L27/15 ,  H01L33/38 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/42 ,  H01L33/62

    Abstract: A light emitting diode including a substrate having a first area and a second area defined by an isolation groove line, a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer, an active layer, a first electrode pad electrically connected to the lower semiconductor layer, a second electrode pad electrically connected to the upper semiconductor layer, and a connecting portion electrically connecting the semiconductor stack disposed in the first and second areas to each other, and including a first portion, a second portion, and a third portion extending from a second distal end of the first portion, in which the isolation groove line is disposed between the first and second electrode pads and exposes the substrate, the first portion extends along a first direction substantially parallel to an extending direction of the isolation groove line, and the second and third portions extend in a second direction crossing the first direction.

    LIGHT EMITTING DIODE
    15.
    发明公开
    LIGHT EMITTING DIODE 审中-公开

    公开(公告)号：US20240313184A1

    公开(公告)日：2024-09-19

    申请号：US18671619

    申请日：2024-05-22

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jae Kwon KIM ,  Min Chan HEO ,  Kyoung Wan KIM ,  Jong Kyu KIM ,  Hyun A KIM ,  Joon Sup LEE

    IPC: H01L33/62 ,  H01L27/15 ,  H01L33/10 ,  H01L33/46

    CPC classification number: H01L33/62 ,  H01L27/156 ,  H01L33/10 ,  H01L33/46

    Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

    FLIP CHIP TYPE LIGHT EMITTING DIODE CHIP AND LIGHT EMITTING DEVICE INCLUDING THE SAME
    17.
    发明申请
    FLIP CHIP TYPE LIGHT EMITTING DIODE CHIP AND LIGHT EMITTING DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20200006612A1

    公开(公告)日：2020-01-02

    申请号：US16453332

    申请日：2019-06-26

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jin Woong LEE ,  Kyoung Wan KIM ,  Keum Ju LEE

    IPC: H01L33/62 ,  H01L33/24 ,  H01L33/42 ,  H01L33/46

    Abstract: A light emitting diode chip includes: a first conductivity type semiconductor layer; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode being in ohmic contact with the second conductivity type semiconductor layer; a first current spreader being in ohmic contact with the first conductivity type semiconductor layer; a second current spreader electrically connected to the transparent electrode; an insulation layer covering the mesa, the first current spreader and the second current spreader, and including a distributed Bragg reflector. A lateral distance between the first current spreader and the mesa is larger than a thickness of the insulation layer, and a first side surface of the first current spreader close to the mesa is longer than the second side surface thereof.

    LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR
    19.
    发明申请
    LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR 审中-公开

    公开(公告)号：US20190067526A1

    公开(公告)日：2019-02-28

    申请号：US15767284

    申请日：2016-06-17

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Ye Seul KIM ,  Sang Won WOO ,  Kyoung Wan KIM

    IPC: H01L33/46

    Abstract: A light emitting diode chip including a light emitting structure having an active layer, and a distributed Bragg reflector (DBR) disposed to reflect light emitted therefrom. The DBR has first and second regions, and a third region therebetween. The first region is closer to the light emitting structure than the second and third regions. The DBR includes first material layers having a high index of refraction and second material layers having a low index of refraction alternately disposed one over another. The first material layers include first, second, and third groups having an optical thickness greater than 0.25λ+10%, in a range of 0.25λ−10% to 0.25λ+10%, and less than 0.25λ−10%, respectively. With respect to a central wavelength (λ: 554 nm) of the visible range, the first region has the first and second groups, the second region has the third group, and the third region has the second and third groups.

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