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    Nano structure semiconductor light emitting device, and system having the same
    12.
    发明授权
    Nano structure semiconductor light emitting device, and system having the same 有权
    纳米结构半导体发光器件及其系统

    公开(公告)号：US09184343B2

    公开(公告)日：2015-11-10

    申请号：US14455853

    申请日：2014-08-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Geon Wook Yoo ,  Jae Hyeok Heo ,  Sam Mook Kang ,  Han Kyu Seong

    IPC: H01L51/50 ,  B82Y20/00 ,  B82Y40/00 ,  H01L33/04 ,  H01L33/08 ,  H01L33/64

    CPC classification number: H01L33/04 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/64

    Abstract: A nanostructure semiconductor light emitting device may include a substrate including a plurality of light emitting nanostructures comprising nanocores including a first conductivity type semiconductor, active layers and second conductivity type semiconductor layers sequentially formed on the nanocores. The light emitting region may include a first region and a second region. The interval between the light emitting nanostructures disposed in the first region may be different than the interval between the light emitting nanostructures disposed in the second region. The first region may be closer to a non-light emitting region than the second region and may have a smaller interval between the light emitting nanostructures than that of the second region. Systems implementing such a nanostructure semiconductor light emitting device and methods of manufacture are also disclosed.

    Abstract translation: 纳米结构半导体发光器件可以包括包括多个发光纳米结构的衬底，其包括依次形成在纳米孔上的包括第一导电类型半导体，有源层和第二导电类型半导体层的纳米孔。 发光区域可以包括第一区域和第二区域。 设置在第一区域中的发光纳米结构之间的间隔可以不同于设置在第二区域中的发光纳米结构之间的间隔。 第一区域可以比第二区域更靠近非发光区域，并且可以在发光纳米结构之间具有比第二区域更小的间隔。 还公开了实施这种纳米结构半导体发光器件的系统和制造方法。

    Method of manufacturing display module using LED
    13.
    发明授权
    Method of manufacturing display module using LED 有权

    公开(公告)号：US10797040B2

    公开(公告)日：2020-10-06

    申请号：US16798027

    申请日：2020-02-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ji Hye Yeon ,  Su Hyun Jo ,  Sung Hyun Sim ,  Ha Nul Yoo ,  Yong Il Kim ,  Han Kyu Seong

    IPC: H01L29/00 ,  H01L27/12 ,  H01L33/50 ,  H01L25/00 ,  H01L23/00 ,  H01L25/18 ,  H01L27/15

    Abstract: A method of manufacturing a display module includes preparing a first substrate structure including an light-emitting diode (LED) array containing a plurality of LED cells, electrode pads connected to the first and second conductivity-type semiconductor layers, and a first bonding layer covering the LED array; preparing a second substrate structure including a plurality of thin-film transistor (TFT) cells disposed on a second substrate, and each having a source region, a drain region and a gate electrode disposed therebetween, the second substrate structure being provided by forming a circuit region, in which connection portions disposed to correspond to the electrode pads are exposed to one surface thereof, and by forming a second bonding layer covering the circuit region, respectively planarizing the first and second bonding layers, and bonding the first and second substrate structures to each other.

    Chip mounting apparatus and method using the same
    14.
    发明授权
    Chip mounting apparatus and method using the same 有权

    公开(公告)号：US10607877B2

    公开(公告)日：2020-03-31

    申请号：US15869405

    申请日：2018-01-12

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jin Sub Lee ,  Han Kyu Seong ,  Yong Il Kim ,  Sung Hyun Sim ,  Dong gun Lee

    IPC: H01L21/68 ,  H01L21/683 ,  H01L23/00 ,  H01L21/67 ,  H01L33/00 ,  H01L33/62 ,  H01L25/075 ,  H01L21/66 ,  B23K26/00

    Abstract: A chip mounting method includes providing a first substrate including a light transmissive substrate having first and second surfaces, a sacrificial layer provided on the first surface, and a plurality of chips bonded to the sacrificial layer, obtaining first mapping data by testing the chips, the first mapping data defining coordinates of normal chips and defective chips among the chips, disposing a second substrate below the first surface, disposing the normal chips on the second substrate by radiating a first laser beam to positions of the sacrificial layer corresponding to the coordinates of the normal chips, based on the first mapping data, to remove portions of the sacrificial layer thereby separating the normal chips from the light transmissive substrate, and mounting the normal chips on the second substrate by radiating a second laser beam to a solder layer of the second substrate.

    LIGHT EMITTING DEVICE PACKAGE AND DISPLAY DEVICE USING THE SAME
    16.
    发明申请
    LIGHT EMITTING DEVICE PACKAGE AND DISPLAY DEVICE USING THE SAME 审中-公开

    公开(公告)号：US20190189876A1

    公开(公告)日：2019-06-20

    申请号：US15995546

    申请日：2018-06-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong Gun LEE ,  Yong II Kim ,  Han Kyu Seong ,  Ji Hye Yeon ,  Jin Sub Lee ,  Young Jin Choi

    IPC: H01L33/62 ,  H01L33/44 ,  H01L25/075 ,  H01L33/50 ,  H01L33/60

    Abstract: A light emitting device package including a cell array including first, second and third light emitting devices each including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, the cell array having a first surface and a second surface opposing the first surface, a light-transmissive substrate including a first wavelength conversion portion and a second wavelength conversion portion corresponding to the first light emitting device and the second light emitting device, respectively, and bonded to the first surface, and a eutectic bonding layer including a first light emitting window, a second light emitting window and a third light emitting window corresponding to the first light emitting device, the second light emitting device and the third light emitting device, respectively, and bonding the light-transmissive substrate and the first to third light emitting devices to each other may be provided.

    Semiconductor light emitting device and manufacturing method thereof
    18.
    发明授权
    Semiconductor light emitting device and manufacturing method thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号：US09553235B2

    公开(公告)日：2017-01-24

    申请号：US14627721

    申请日：2015-02-20

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dae Myung Chun ,  Ji Hye Yeon ,  Jae Hyeok Heo ,  Hyun Seong Kum ,  Han Kyu Seong ,  Young Jin Choi

    IPC: H01L21/00 ,  H01L33/24 ,  H01L33/00 ,  H01L33/08

    CPC classification number: H01L33/24 ,  H01L33/007 ,  H01L33/08 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

    Abstract: A method for manufacturing a semiconductor light emitting device may include steps of forming a mask layer and a mold layer having a plurality of openings exposing portions of a base layer, forming a plurality of first conductivity-type semiconductor cores each including a body portion extending through each of the openings from the base layer and a tip portion disposed on the body portion and having a conical shape, and forming an active layer and a second conductivity-type semiconductor layer on each of the plurality of first conductivity-type semiconductor cores. The step of forming the plurality of first conductivity-type semiconductor cores may include forming a first region such that a vertex of the tip portion is positioned on a central vertical axis of the body portion, removing the mold layer, and forming an additional growth region on the first region such that the body portion has a hexagonal prism shape.

    Abstract translation: 半导体发光器件的制造方法可以包括以下步骤：形成掩模层和模具层，所述模具层具有暴露基底层的部分的多个开口，形成多个第一导电型半导体芯，每个第一导电型半导体芯包括主体部分延伸穿过 从底层开口的每个开口和设置在主体部分上的具有圆锥形状的尖端部分，并且在多个第一导电型半导体芯中的每一个上形成有源层和第二导电类型半导体层。 形成多个第一导电型半导体芯的步骤可以包括形成第一区域，使得尖端部分的顶点位于主体部分的中心垂直轴线上，去除模具层，并形成附加生长区域 在第一区域上使得主体部分具有六棱柱形状。

    Semiconductor light emitting device
    19.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US09425355B2

    公开(公告)日：2016-08-23

    申请号：US14161861

    申请日：2014-01-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyung Ho Yoo ,  Han Kyu Seong ,  Nam Goo Cha ,  Tae Woong Kim

    IPC: H01L29/06 ,  H01L31/00 ,  H01L33/24 ,  H01L31/0232

    CPC classification number: H01L33/24 ,  H01L31/0232 ,  H01L2224/48137 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012

    Abstract: A semiconductor light emitting device including a first conductive semiconductor base layer on a substrate; an insulating layer on the first conductive semiconductor base layer, the insulating layer including a plurality of openings through which the first conductive semiconductor base layer is exposed; and a plurality of nanoscale light emitting structures on the first conductive semiconductor base layer, the nanoscale light emitting structures respectively including a first conductive semiconductor core on an exposed region of the first conductive semiconductor base layer, and an active layer, and a second conductive semiconductor layer sequentially disposed on a surface of the first conductive semiconductor core, wherein a lower edge of a side portion of each nanoscale light emitting structure is on an inner side wall of the opening in the insulating layer.

    Abstract translation: 一种半导体发光器件，包括在基板上的第一导电半导体基底层; 在所述第一导电半导体基底层上的绝缘层，所述绝缘层包括暴露所述第一导电半导体基底层的多个开口; 以及在所述第一导电半导体基底层上的多个纳米级发光结构，所述纳米级发光结构分别包括在所述第一导电半导体基底层的暴露区域上的第一导电半导体芯和有源层，以及第二导电半导体 层，其顺序地设置在第一导电半导体芯的表面上，其中每个纳米级发光结构的侧部的下边缘在绝缘层中的开口的内侧壁上。

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