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公开(公告)号：US20160049553A1
公开(公告)日：2016-02-18
申请号：US14828004
申请日：2015-08-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Hyun SIM , Geon Wook YOO , Mi Hyun KIM , Dong Hoon LEE , Jin Bock LEE , Je Won KIM , Hye Seok NOH , Dong Kuk LEE
CPC classification number: H01L33/24 , F21K9/232 , F21Y2115/10 , H01L33/08 , H01L33/38
Abstract: A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.
Abstract translation: 纳米结构半导体发光器件可以包括：具有第一和第二区域并由第一导电型半导体材料形成的基极层; 多个发光纳米结构，其设置在所述基底层的上表面上，每一个包括由所述第一导电型半导体材料形成的纳米孔，以及依次设置在所述纳米孔上的有源层和第二导电型半导体层; 以及设置在所述多个发光纳米结构上的接触电极，其中设置在所述第一区域上的每个发光纳米结构的末端部分可以不被所述接触电极覆盖，并且每个所述发光纳米结构的顶端部分设置在所述第一区域上 第二区域可以被接触电极覆盖。
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公开(公告)号：US20190103510A1
公开(公告)日：2019-04-04
申请号：US16190538
申请日：2018-11-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Yong Il KIM , Young Soo PARK , Sung Hyun SIM , Hanul YOO
IPC: H01L33/08 , H01L33/50 , H01L33/58 , H01L25/075 , H01L33/38 , G09G3/20 , G09G3/32 , H01L33/46 , H01L33/62
CPC classification number: H01L33/08 , G09G3/2003 , G09G3/32 , H01L25/0756 , H01L33/382 , H01L33/46 , H01L33/504 , H01L33/58 , H01L33/62 , H01L2224/16145
Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.
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公开(公告)号：US20180374738A1
公开(公告)日：2018-12-27
申请号：US15869405
申请日：2018-01-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin Sub LEE , Han Kyu SEONG , Yong II KIM , Sung Hyun SIM , Dong gun LEE
IPC: H01L21/683 , H01L21/66 , H01L23/00 , H01L21/67 , H01L33/00 , H01L33/62 , H01L25/075
Abstract: A chip mounting method includes providing a first substrate including a light transmissive substrate having first and second surfaces, a sacrificial layer provided on the first surface, and a plurality of chips bonded to the sacrificial layer, obtaining first mapping data by testing the chips, the first mapping data defining coordinates of normal chips and defective chips among the chips, disposing a second substrate below the first surface, disposing the normal chips on the second substrate by radiating a first laser beam to positions of the sacrificial layer corresponding to the coordinates of the normal chips, based on the first mapping data, to remove portions of the sacrificial layer thereby separating the normal chips from the light transmissive substrate, and mounting the normal chips on the second substrate by radiating a second laser beam to a solder layer of the second substrate.
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公开(公告)号：US20180261738A1
公开(公告)日：2018-09-13
申请号：US15973977
申请日：2018-05-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Wan Tae LIM , Yong II KIM , Hye Seok NOH , Eun Joo SHIN , Sung Hyun SIM , Hanul YOO
IPC: H01L33/58 , H01L33/50 , H01L33/44 , H01L33/00 , F21K9/275 , F21S8/02 , F21K9/237 , F21Y115/10 , F21Y103/10 , F21V23/00
CPC classification number: H01L33/58 , F21K9/237 , F21K9/275 , F21S8/026 , F21V23/005 , F21Y2103/10 , F21Y2115/10 , H01L33/0079 , H01L33/44 , H01L33/505 , H01L2224/11
Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.
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公开(公告)号：US20170338210A1
公开(公告)日：2017-11-23
申请号：US15386425
申请日：2016-12-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： YONG IL KIM , Wan Tae LIM , Young Jin CHOI , Sung Hyun SIM
CPC classification number: H01L25/167 , H01L27/124 , H01L33/06 , H01L33/32 , H01L33/50 , H01L33/54
Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other. The light emitting device package may further include a plurality of wavelength conversion units disposed on the first surface of the cell array to correspond to the plurality of semiconductor light emitting units, respectively, each configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light, and a partition structure disposed in a space between the plurality of wavelength conversion units, and a plurality of switching units spaced apart from the plurality of wavelength conversion units within the partition structure, and electrically connected to the plurality of semiconductor light emitting units.
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Patent Agency Ranking
公开(公告)号：US20160351764A1
公开(公告)日：2016-12-01
申请号：US15163204
申请日：2016-05-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Wan Tae LIM , Yong Il KIM , Hye Seok NOH , Eun Joo SHIN , Sung Hyun SIM , Hanul YOO
CPC classification number: H01L33/58 , F21K9/237 , F21K9/275 , F21S8/026 , F21V23/005 , F21Y2103/10 , F21Y2115/10 , H01L33/0079 , H01L33/44 , H01L33/505 , H01L2224/11
Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.
Abstract translation: 半导体发光器件包括：发光结构，包括分别提供发光结构的彼此相对的第一表面和第二表面的第一导电类型半导体层和第二导电类型半导体层，以及 有源层插入在第一导电型半导体层和第二导电类型半导体层之间，第一导电型半导体层的区域朝向第二表面开口，第一表面具有设置在其上的凹凸部分; 分别设置在第一导电型半导体层的区域和第二导电型半导体层的区域上的第一电极和第二电极; 设置在所述发光结构的第一表面上的透明支撑基板; 以及设置在发光结构的第一表面和透明支撑基板之间的透明粘合剂层。
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公开(公告)号：US20160125804A1
公开(公告)日：2016-05-05
申请号：US14825670
申请日：2015-08-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Nam Goo CHA , Young Soo PARK , Sung Hyun SIM , Je Won KIM
CPC classification number: G09G3/3233 , G09G2300/0426 , G09G2300/0452 , G09G2300/0852 , G09G2310/0297 , H01L27/156
Abstract: There is provided a display device including a plurality of pixels. Each of the plurality of pixels may include a plurality of switching devices, at least one capacitor, and a semiconductor light-emitting device. The display device may further include a driving circuit configured to apply currents to the semiconductor light-emitting device through the plurality of switching devices and at least one capacitor. The semiconductor light-emitting device may emit red light, green light, and blue light through the currents applied by the driving circuit.
Abstract translation: 提供了包括多个像素的显示装置。 多个像素中的每一个可以包括多个开关器件，至少一个电容器和半导体发光器件。 显示装置还可以包括被配置为通过多个开关装置和至少一个电容器向半导体发光装置施加电流的驱动电路。 半导体发光装置可以通过由驱动电路施加的电流发出红光，绿光和蓝光。
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公开(公告)号：US20190371779A1
公开(公告)日：2019-12-05
申请号：US16185602
申请日：2018-11-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ji Hye YEON , Su Hyun JO , Sung Hyun SIM , Ha Nul YOO , Yong Il KIM , Han Kyu SEONG
Abstract: A method of manufacturing a display module includes preparing a first substrate structure including an light-emitting diode (LED) array containing a plurality of LED cells, electrode pads connected to the first and second conductivity-type semiconductor layers, and a first bonding layer covering the LED array; preparing a second substrate structure including a plurality of thin-film transistor (TFT) cells disposed on a second substrate, and each having a source region, a drain region and a gate electrode disposed therebetween, the second substrate structure being provided by forming a circuit region, in which connection portions disposed to correspond to the electrode pads are exposed to one surface thereof, and by forming a second bonding layer covering the circuit region, respectively planarizing the first and second bonding layers, and bonding the first and second substrate structures to each other.
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公开(公告)号：US20190189853A1
公开(公告)日：2019-06-20
申请号：US16011903
申请日：2018-06-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hanul YOO , Sung Hyun SIM , Ji Hye YEON , Yong Il KIM , Dong Gun LEE
CPC classification number: H01L33/385 , H01L33/40 , H01L33/46 , H01L33/504 , H01L2933/0016 , H01L2933/005
Abstract: A light emitting device package comprises a light emitting cell array including a first light emitting cell, a second light emitting cell, and a third light emitting cell, and including a first surface, and a second surface, disposed to oppose the first surface; a plurality of metal pillars disposed on the first surface of the light emitting cell array and electrically connected to the first light emitting cell, the second light emitting cell, and the third light emitting cell; and a molding portion encapsulating the light emitting cell array and the plurality of metal pillars, wherein the plurality of metal pillars include a conductive layer and a bonding layer disposed below the conductive layer, and an interface between the bonding layer and the conductive layer is higher than a lower surface of the molding portion.
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公开(公告)号：US20190181181A1
公开(公告)日：2019-06-13
申请号：US15992316
申请日：2018-05-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ji Hye YEON , Sung Hyun SIM , Ha Nul YOO , Dong Gun LEE
CPC classification number: H01L27/156 , H01L25/167 , H01L33/0079 , H01L33/22 , H01L33/46 , H01L33/505 , H01L33/56 , H01L33/58 , H01L33/62 , H01L33/641 , H01L2933/0025 , H01L2933/0041 , H01L2933/005 , H01L2933/0058 , H01L2933/0075 , H01L2933/0091
Abstract: A method of fabricating a light emitting device package including forming a cell array that includes semiconductor light-emitters including first and second conductivity-type semiconductor layers and an active layer on a substrate, and a separation region, the cell array having a first surface contacting the substrate; exposing the first surface of the separation region by removing the substrate; forming a seed layer on the first surface in the separation region; forming a photoresist pattern on the light-emitters such that the photoresist pattern exposes the seed layer; forming a partition structure that separates the light-emitters by plating a region exposed by the photoresist pattern; forming light emitting windows of the partition structure by removing the photoresist pattern such that the light-emitters are exposed at lower ends of the light emitting windows; and forming wavelength converters by filling the light emitting windows with a wavelength conversion material.
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