公开(公告)号：US11711065B2

公开(公告)日：2023-07-25

申请号：US17141065

申请日：2021-01-04

Applicant: Soitec

Inventor： Marcel Broekaart ,  Thierry Barge ,  Pascal Guenard ,  Ionut Radu ,  Eric Desbonnets ,  Oleg Kononchuk

IPC: A61B5/1459 ,  A61B5/00 ,  A61B5/145 ,  H03H9/02 ,  H03H3/02 ,  H10N30/072 ,  H10N30/87 ,  H10N39/00 ,  H03H3/04 ,  H03H3/10 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/56 ,  H03H9/64 ,  H10N30/085

CPC classification number: H03H9/02834 ,  A61B5/1459 ,  A61B5/14546 ,  A61B5/685 ,  H03H3/02 ,  H03H3/04 ,  H03H3/10 ,  H03H9/02102 ,  H03H9/02574 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/56 ,  H03H9/6489 ,  H10N30/072 ,  H10N30/87 ,  H10N39/00 ,  A61B2562/0204 ,  H03H2003/0407 ,  H10N30/085

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

公开(公告)号：US10924081B2

公开(公告)日：2021-02-16

申请号：US16829604

申请日：2020-03-25

Applicant: Soitec

Inventor： Marcel Broekaart ,  Thierry Barge ,  Pascal Guenard ,  Ionut Radu ,  Eric Desbonnets ,  Oleg Kononchuk

IPC: H03H9/02 ,  H03H3/02 ,  H03H3/04 ,  H03H3/10 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/56 ,  H03H9/64 ,  H01L41/312 ,  H01L41/047 ,  H01L27/20 ,  H01L41/335

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

公开(公告)号：US20190007024A1

公开(公告)日：2019-01-03

申请号：US16064419

申请日：2016-12-21

Applicant: Soitec

Inventor： Marcel Broekaart ,  Thierry Barge ,  Pascal Guenard ,  Ionut Radu ,  Eric Desbonnets ,  Oleg Kononchuk

IPC: H03H9/02 ,  H03H3/04 ,  H03H3/10 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/56 ,  H03H9/64 ,  H01L27/20 ,  H01L41/047

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

公开(公告)号：US09478707B2

公开(公告)日：2016-10-25

申请号：US14405632

申请日：2013-06-14

Applicant: Soitec

Inventor： Pascal Guenard

IPC: H01L33/32 ,  H01L31/02 ,  H01L31/075 ,  H01L31/18 ,  H01L33/00 ,  H01L27/142 ,  H01L27/15 ,  H01L31/0304 ,  H01L33/44 ,  H01L33/20

CPC classification number: H01L33/62 ,  H01L25/042 ,  H01L25/0753 ,  H01L27/142 ,  H01L27/153 ,  H01L27/156 ,  H01L31/02008 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/035236 ,  H01L31/0543 ,  H01L31/055 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1844 ,  H01L31/1848 ,  H01L31/1852 ,  H01L31/1864 ,  H01L31/1892 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/44 ,  H01L33/46 ,  H01L33/502 ,  H01L33/58 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/92244 ,  H01L2924/3512 ,  H01L2933/0016 ,  Y02E10/52 ,  Y02E10/548

Abstract: The disclosure relates to a manufacturing method comprising the formation of elemental LED or photovoltaic structures on a first substrate, each comprising at least one p-type layer, an active zone and an n-type layer, formation of a first planar metal layer on the elemental structures, provision of a transfer substrate comprising a second planar metal layer, assembly of the elemental structures with the transfer substrate by bonding of the first and second metal layers by molecular adhesion at room temperature, and removal of the first substrate.

Abstract translation: 本公开涉及一种制造方法，包括在第一衬底上形成元素LED或光伏结构，每个包括至少一个p型层，活性区和n型层，在第一衬底上形成第一平面金属层 元件结构，提供包括第二平面金属层的转移衬底，通过在室温下通过分子粘合键合第一和第二金属层以及去除第一衬底，将元件结构与转移衬底的组合。

公开(公告)号：US09412904B2

公开(公告)日：2016-08-09

申请号：US14370903

申请日：2013-01-04

Applicant: Commissariaat a l'energie atomique et aux ene alt ,  SOITEC

Inventor： Yohan Desieres ,  Philippe Gilet ,  Pascal Guenard

IPC: H01L33/58 ,  H01L33/00 ,  H01L33/22 ,  H01L33/10 ,  H01L33/46 ,  G02B5/02 ,  H01L33/32

CPC classification number: H01L33/22 ,  G02B5/0236 ,  G02B5/0284 ,  H01L33/005 ,  H01L33/10 ,  H01L33/32 ,  H01L33/46 ,  H01L2933/0025 ,  H01L2933/0058

Abstract: A device for back-scattering an incident light ray, including: a host substrate; a structured layer; a first face in contact with a front face of the host substrate; a second flat face parallel to the first face; a first material and a second material which form, in a mixed plane, alternating surfaces at least one of whose dimensions is between 300 nm and 800 nm, the mixed plane is between the first and second face of the structured layer; wherein the refractive index of the first and of the second material are different, the structured layer is covered by a specific layer, the specific layer is made of a material which is different from the first and second materials of the structured layer, and the specific layer is crystalline and semi-conductive.

Abstract translation: 一种用于对入射光线进行背散射的装置，包括：主机基板; 结构化层; 与主体基板的前表面接触的第一面; 平行于第一面的第二平面; 第一材料和第二材料，其在混合平面中形成至少一个其尺寸在300nm和800nm之间的交替表面，所述混合平面在所述结构化层的第一和第二面之间; 其中所述第一和第二材料的折射率不同，所述结构化层被特定层覆盖，所述特定层由与所述结构化层的第一和第二材料不同的材料制成，并且所述特定层 层是晶体和半导电的。

公开(公告)号：US12143093B2

公开(公告)日：2024-11-12

申请号：US18352972

申请日：2023-07-14

Applicant: Soitec

Inventor： Marcel Broekaart ,  Thierry Barge ,  Pascal Guenard ,  Ionut Radu ,  Eric Desbonnets ,  Oleg Kononchuk

IPC: H03H9/02 ,  A61B5/00 ,  A61B5/145 ,  A61B5/1459 ,  H03H3/02 ,  H03H3/04 ,  H03H3/10 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/56 ,  H03H9/64 ,  H10N30/072 ,  H10N30/085 ,  H10N30/87 ,  H10N39/00

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

公开(公告)号：US11652464B2

公开(公告)日：2023-05-16

申请号：US15769684

申请日：2016-10-17

Applicant: Soitec

Inventor： Pascal Guenard ,  Ionut Radu

IPC: H03H9/02 ,  H03H3/10 ,  H03H9/145 ,  H01L41/053 ,  H01L41/047 ,  H01L41/337 ,  H01L41/23 ,  H03H9/64 ,  H03H9/72

CPC classification number: H03H9/02834 ,  H01L41/0475 ,  H01L41/0533 ,  H01L41/23 ,  H01L41/337 ,  H03H3/10 ,  H03H9/02574 ,  H03H9/02984 ,  H03H9/145 ,  H03H9/64 ,  H03H9/725

Abstract: A production method for a surface acoustic wave device comprises the following steps: a step of providing a piezoelectric substrate comprising a transducer arranged on the main front face; a step of depositing a dielectric encapsulation layer on the main front face of the piezoelectric substrate and on the transducer; and a step of assembling the dielectric encapsulation layer with the main front face of a support substrate having a coefficient of thermal expansion less than that of the piezoelectric substrate. In additional embodiments, a surface acoustic wave device comprises a layer of piezoelectric material equipped with a transducer on a main front face, arranged on a substrate support of which the coefficient of thermal expansion is less than that of the piezoelectric material. The transducer is arranged in a dielectric encapsulation layer, between the layer of piezoelectric material and the support substrate.

公开(公告)号：US20200228088A1

公开(公告)日：2020-07-16

申请号：US16829604

申请日：2020-03-25

Applicant: Soitec

Inventor： Marcel Broekaart ,  Thierry Barge ,  Pascal Guenard ,  Ionut Radu ,  Eric Desbonnets ,  Oleg Kononchuk

IPC: H03H9/02 ,  H01L41/312 ,  H03H3/02 ,  H01L27/20 ,  H01L41/047 ,  H03H3/04 ,  H03H3/10 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/56 ,  H03H9/64

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

公开(公告)号：US20180316329A1

公开(公告)日：2018-11-01

申请号：US15769698

申请日：2016-10-17

Applicant: Soitec

Inventor： Pascal Guenard ,  Ionut Radu ,  Didier Landru ,  Eric Desbonnets

IPC: H03H3/04 ,  H01L41/053 ,  H01L41/312 ,  H03H9/02 ,  H03H9/05

CPC classification number: H01L41/312 ,  H01L41/0805 ,  H03H9/02102 ,  H03H9/02574

Abstract: A composite structure for an acoustic wave device comprising a heterostructure includes: a useful layer of piezoelectric material, having a first face and a second face, the first face being arranged at a first bonding interface on a support substrate having a coefficient of thermal expansion less than that of the useful layer, wherein the composite structure further comprises a functional layer, an entire surface of which is arranged at a second bonding interface on the second face of the useful layer and having a coefficient of thermal expansion less than that of the useful layer. Methods are used for producing such a composite structure.

公开(公告)号：US20150001568A1

公开(公告)日：2015-01-01

申请号：US14370903

申请日：2013-01-04

Applicant: Commissariaat a I'energie atomique et aux ene alt ,  SOITEC

Inventor： Yohan Desieres ,  Philippe Gilet ,  Pascal Guenard

IPC: H01L33/22 ,  H01L33/00 ,  G02B5/02 ,  H01L33/10

CPC classification number: H01L33/22 ,  G02B5/0236 ,  G02B5/0284 ,  H01L33/005 ,  H01L33/10 ,  H01L33/32 ,  H01L33/46 ,  H01L2933/0025 ,  H01L2933/0058

Abstract: A device for back-scattering an incident light ray, including: a host substrate; a structured layer; a first face in contact with a front face of the host substrate; a second flat face parallel to the first face; a first material and a second material which form, in a mixed plane, alternating surfaces at least one of whose dimensions is between 300 nm and 800 nm, the mixed plane is between the first and second face of the structured layer; wherein the refractive index of the first and of the second material are different, the structured layer is covered by a specific layer, the specific layer is made of a material which is different from the first and second materials of the structured layer, and the specific layer is crystalline and semi-conductive.

Abstract translation: 一种用于对入射光线进行背散射的装置，包括：主机基板; 结构化层; 与主体基板的前表面接触的第一面; 平行于第一面的第二平面; 第一材料和第二材料，其在混合平面中形成至少一个其尺寸在300nm和800nm之间的交替表面，所述混合平面位于所述结构化层的第一和第二面之间; 其中所述第一和第二材料的折射率不同，所述结构化层被特定层覆盖，所述特定层由与所述结构化层的第一和第二材料不同的材料制成，并且所述特定层 层是晶体和半导电的。