公开(公告)号：US20150179407A1

公开(公告)日：2015-06-25

申请号：US14576424

申请日：2014-12-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chishio KOSHIMIZU ,  Jun YAMAWAKU

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32091

Abstract: Disclosed is a plasma processing method for generating plasma between an upper electrode connected with a VF power supply and a susceptor disposed to face the upper electrode to perform a plasma processing on a wafer by the plasma. The plasma processing method includes: providing an auxiliary circuit configured to reduce a difference between a reflection minimum frequency of a first route where a high frequency current generated from the VF power supply flows before ignition of the plasma and a reflection minimum frequency of a second route where the high frequency current generated from the VF power supply flows after the ignition of the plasma; igniting the plasma; and maintaining the plasma.

Abstract translation: 公开了一种用于在与VF电源连接的上电极和与上电极相对设置的基座之间产生等离子体的等离子体处理方法，以通过等离子体对晶片进行等离子体处理。 等离子体处理方法包括：提供辅助电路，其被配置为减少在等离子体点火之前从VF电源产生的高频电流流过的第一路线的反射最小频率与第二路径的反射最小频率之间的差异 其中由VF电源产生的高频电流在等离子体点火之后流动; 点燃等离子体; 并维持等离子体。

公开(公告)号：US20140170859A1

公开(公告)日：2014-06-19

申请号：US14100224

申请日：2013-12-09

Applicant: Tokyo Electron Limited

Inventor： Jun YAMAWAKU ,  Chishio Koshimizu ,  Yohei Yamazawa ,  Mitsuhiro Tachibana ,  Hitoshi Kato ,  Takeshi Kobayashi ,  Shigehiro Miura ,  Takafumi Kimura

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01J37/321 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/4584 ,  H01J37/32082 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32651 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32752 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

Abstract: A film formation device to conduct a film formation process for a substrate includes a rotating table, a film formation area configured to include a process gas supply part, a plasma processing part, a lower bias electrode provided at a lower side of a position of a height of the substrate on the rotating table, an upper bias electrode arranged at the same position of the height or an upper side of a position of the height, a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled, and an exhaust mechanism.

Abstract translation: 用于对基板进行成膜处理的成膜装置包括旋转台，成膜区域，其被配置为包括处理气体供给部，等离子体处理部，设置在位置的下侧的下偏置电极 位于旋转台上的基板的高度，布置在高度位置的相同位置的上偏置电极或高度位置的上侧;高频电源部分，连接到下偏置电极和下偏置电极中的至少一个; 所述上偏置电极并且被配置为以所述下偏置电极和所述上偏置电极电容耦合的方式在所述衬底上形成偏置电位，以及排气机构。

公开(公告)号：US20220165544A1

公开(公告)日：2022-05-26

申请号：US17440613

申请日：2020-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Munehito KAGAYA ,  Satoru KAWAKAMI ,  Tsuyoshi MORIYA ,  Tatsuo MATSUDO ,  Jun YAMAWAKU ,  Hiroyuki ONODA

IPC: H01J37/32 ,  H01L21/02

Abstract: There is provided a plasma processing device. The plasma processing device comprises: a processing chamber; a partition plate that has an insulating property, and configured to partition a space in the processing chamber into a reaction chamber in which an object to be processed is mounted and a plasma generating chamber in which plasma is generated, wherein a first electrode is provided on a surface of the partition plate on the side of the plasma generating chamber, and the partition plate has a plurality of through holes formed for supplying active species contained in the plasma generated in the plasma generating chamber to the reaction chamber; a second electrode disposed in the plasma generating chamber so as to face the first electrode; and a power supply configured to supply high-frequency power obtained by phase-controlling and superimposing high-frequency powers of a plurality of frequencies to one of the first electrode and the second electrode when the plasma is generated in the plasma generating chamber.

公开(公告)号：US20190108975A1

公开(公告)日：2019-04-11

申请号：US16214567

申请日：2018-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU ,  Tatsuo MATSUDO ,  Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a high frequency antenna having first and second antenna elements. One end of the first antenna element is grounded and the other end thereof is connected to a high frequency power supply. One end of the second antenna element is an open end and the other end thereof is connected to either one of the one end and the other end of the first antenna element, a line length of the second antenna element having a value obtained by multiplying ((λ/4)+nλ/2) by a fractional shortening (λ is a wavelength of high frequency in vacuum and n is a natural number). A circuit viewed from the high frequency power supply toward the high frequency antenna is configured to generate, when a frequency of a high frequency power is changed, two resonant frequencies by an adjustment of the impedance adjustment unit.

公开(公告)号：US20160315001A1

公开(公告)日：2016-10-27

申请号：US15201161

申请日：2016-07-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU ,  Junji OIKAWA ,  Hiroyuki NAKAYAMA

IPC: H01L21/67 ,  H01L21/677

CPC classification number: H01L21/67184 ,  H01L21/67069 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67213 ,  H01L21/67742 ,  H01L21/6831

Abstract: A transfer chamber is provided between a processing unit for performing a predetermined process on a target substrate to be processed in a depressurized environment and an atmospheric maintaining unit for maintaining the target substrate in an atmospheric environment to transfer the target substrate therebetween. The transfer chamber includes a chamber main body for accommodating the target substrate, a gas exhaust unit for exhausting the chamber main body to set the chamber main body to the depressurized environment, and a gas supply unit for supplying a predetermined gas to the chamber main body to set the chamber main body in the atmospheric environment. Further, in the transfer chamber, an ionization unit is provided outside the chamber main body, for ionizing the predetermined gas and an ionized gas supply unit is provided to supply the ionized gas generated by the ionization unit to the chamber main body.

Abstract translation: 传送室设置在用于在减压环境中对要处理的目标基板进行预定处理的处理单元和用于将目标基板保持在大气环境中以在其间传送目标基板的大气保持单元。 传送室包括用于容纳目标基板的室主体，用于排出室主体以将室主体设置到减压环境的排气单元，以及用于将预定气体供应到室主体的气体供应单元 将室主体设置在大气环境中。 此外，在传送室中，离子化单元设置在室主体的外部，用于电离所述预定气体，并且提供电离气体供应单元以将由离子化单元产生的电离气体供应到室主体。

公开(公告)号：US20160126064A1

公开(公告)日：2016-05-05

申请号：US14934066

申请日：2015-11-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU ,  Tatsuo MATSUDO ,  Chishio KOSHIMIZU

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32183 ,  H01J37/32651 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a high frequency antenna having first and second antenna elements. One end of the first antenna element is grounded and the other end thereof is connected to a high frequency power supply. One end of the second antenna element is an open end and the other end thereof is connected to either one of the one end and the other end of the first antenna element, a line length of the second antenna element having a value obtained by multiplying ((λ/4)+nλ/2) by a fractional shortening (λ is a wavelength of high frequency in vacuum and n is a natural number). A circuit viewed from the high frequency power supply toward the high frequency antenna is configured to generate, when a frequency of a high frequency power is changed, two resonant frequencies by an adjustment of the impedance adjustment unit.

Abstract translation: 等离子体处理装置包括具有第一和第二天线元件的高频天线。 第一天线元件的一端接地，另一端与高频电源连接。 第二天线元件的一端是开放端，其另一端连接到第一天线元件的一端和另一端中的任一端，第二天线元件的线长度具有通过乘以 （λ/ 4）+nλ/ 2）通过分数缩短（λ是真空中的高频波长，n是自然数）。 从高频电源向高频天线观察的电路被配置为通过调整阻抗调整单元来产生高频功率的频率改变两个谐振频率。

公开(公告)号：US20160126063A1

公开(公告)日：2016-05-05

申请号：US14933911

申请日：2015-11-05

Applicant: Tokyo Electron Limited

Inventor： Jun YAMAWAKU ,  Tatsui MATSUDO ,  Chishio KOSHUMIZU

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32119 ,  H01J37/32183 ,  H01J37/32651

Abstract: A plasma processing apparatus includes a plasma generation unit configured to convert a processing gas supplied into a processing chamber into plasma by an inductive coupling. The plasma generation unit includes a first high frequency antenna formed of a vortex coil arranged adjacent to the processing chamber through a dielectric window, a second high frequency antenna having a natural resonant frequency and formed of a vortex coil arranged at an outer or inner peripheral side of the first high frequency antenna, and an impedance adjustment unit for adjusting a resonant frequency of a circuit viewed from the high frequency power supply toward the first high frequency antenna. The circuit viewed from the high frequency power supply toward the first high frequency antenna is configured to have two resonant frequencies depending on adjustment of the impedance adjustment unit when a frequency of high frequency power is changed.

Abstract translation: 等离子体处理装置包括等离子体产生单元，其被配置为通过感应耦合将供给到处理室中的处理气体转换为等离子体。 等离子体产生单元包括由通过电介质窗设置在与处理室相邻的涡流线圈的第一高频天线，具有固有谐振频率的第二高频天线，并且由设置在外周侧或内周侧的涡流线圈形成 以及阻抗调整单元，用于调整从高频电源向第一高频天线观察的电路的谐振频率。 从高频电源朝向第一高频天线观察的电路被配置为具有两个谐振频率，这取决于当高频功率的频率改变时阻抗调节单元的调整。

公开(公告)号：US20150132505A1

公开(公告)日：2015-05-14

申请号：US14538981

申请日：2014-11-12

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Shigehiro MIURA ,  Chishio KOSHIMIZU ,  Jun YAMAWAKU ,  Yohei YAMAZAWA

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32651

Abstract: A plasma processing apparatus is provided. According to the apparatus, a main antenna connected to a high frequency power source and an auxiliary antenna electrically insulated from main antenna is arranged. Moreover, projection areas when the main antenna and the auxiliary antenna are seen in a plan view are arranged so as not to overlap with each other. More specifically, the auxiliary antenna is arranged on a downstream side in a rotational direction of the turntable relative to the main antenna. Then, a first electromagnetic field is generated in the auxiliary antenna by way of an induction current flowing through the main antenna, and a second induction plasma is generated even in an area under the auxiliary antenna in addition to an area under the main antenna by resonating the auxiliary antenna.

Abstract translation: 提供了一种等离子体处理装置。 根据该装置，设置连接到高频电源的主天线和与主天线电绝缘的辅助天线。 此外，在平面图中看到主天线和辅助天线的投影区域被布置成彼此不重叠。 更具体地，辅助天线布置在转台相对于主天线的旋转方向的下游侧。 然后，通过流经主天线的感应电流在辅助天线中产生第一电磁场，除辅助天线之下的区域之外，还产生第二感应等离子体 辅助天线。

公开(公告)号：US20240133031A1

公开(公告)日：2024-04-25

申请号：US18275359

申请日：2022-01-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU

IPC: C23C16/455 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/45536 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32449 ,  H01J2237/3321

Abstract: [Solution] A device according to the present disclosure comprises: a plasma generation chamber that is provided with a plasma generation mechanism for activating a second processing gas, when forming a film on a substrate by supplying each of a first processing gas, a substitution gas, the plasma-activated second processing gas, and the substitution gas, in order and by turns, to a processing vessel in which an interior processing space is evacuated so as to become a vacuum atmosphere; an evacuation mechanism that evacuates the plasma generation chamber; and a supply destination changing valve that is provided on an evacuation path connecting the plasma generation chamber and the evacuation mechanism, and opens and closes such that the supply destination of the plasma-activated second processing gas switches between a downstream side of the evacuation path, and the processing space.

公开(公告)号：US20160203951A1

公开(公告)日：2016-07-14

申请号：US15079381

申请日：2016-03-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Chishio KOSHIMIZU ,  Kazuki DENPOH ,  Jun YAMAWAKU ,  Masashi SAITO

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01J37/3211 ,  C23C16/455 ,  C23C16/50 ,  H01J37/321 ,  H01J37/3244 ,  H05H1/46

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.

Abstract translation: 一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈形RF天线; 基板支撑单元，设置在处理室中，用于在其上安装待处理的目标基板; 处理气体供应单元，用于将所需的处理气体供应到处理室以对目标基板执行所需的等离子体处理; 以及RF电源单元，用于向RF天线提供RF功率，以通过处理室中的感应耦合产生处理气体的等离子体。 该装置还包括一个浮动线圈，其浮动并布置在处理室外部的位置处，浮动线圈将通过电磁感应与RF天线耦合; 以及设置在浮动线圈的环路中的电容器。