公开(公告)号：US20140159228A1

公开(公告)日：2014-06-12

申请号：US13707159

申请日：2012-12-06

申请人： Weng Hong Teh ,  Chia-Pin Chiu

发明人： Weng Hong Teh ,  Chia-Pin Chiu

IPC分类号： H01L21/56 ,  H01L23/522

CPC分类号： H01L24/25 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/50 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/2501 ,  H01L2224/2505 ,  H01L2224/2512 ,  H01L2224/255 ,  H01L2224/73209 ,  H01L2224/81005 ,  H01L2224/92133 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/141 ,  H01L2924/1431 ,  H01L2924/1461 ,  H01L2924/15151 ,  H01L2924/15192 ,  H01L2924/15747 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/00

摘要： Discussed generally herein are devices that include high density interconnects between dice and techniques for making and using those devices. In one or more embodiments a device can include a bumpless buildup layer (BBUL) substrate including a first die at least partially embedded in the BBUL substrate, the first die including a first plurality of high density interconnect pads. A second die can be at least partially embedded in the BBUL substrate, the second die including a second plurality of high density interconnect pads. A high density interconnect element can be embedded in the BBUL substrate, the high density interconnect element including a third plurality of high density interconnect pads electrically coupled to the first and second plurality of high density interconnect pads.

摘要翻译： 这里通常讨论的是包括骰子之间的高密度互连和用于制造和使用这些设备的技术的设备。 在一个或多个实施例中，器件可以包括无冲突构建层（BBUL）衬底，其包括至少部分地嵌入在BBUL衬底中的第一管芯，第一管芯包括第一多个高密度互连焊盘。 第二管芯可以至少部分地嵌入在BBUL衬底中，第二管芯包括第二多个高密度互连焊盘。 高密度互连元件可以嵌入在BBUL基板中，高密度互连元件包括电耦合到第一和第二多个高密度互连焊盘的第三多个高密度互连焊盘。

公开(公告)号：US08633551B1

公开(公告)日：2014-01-21

申请号：US13537573

申请日：2012-06-29

申请人： Weng Hong Teh ,  Kevin L. Lin ,  Feras Eid ,  Qing Ma

发明人： Weng Hong Teh ,  Kevin L. Lin ,  Feras Eid ,  Qing Ma

IPC分类号： H01L27/14

CPC分类号： H01L24/19 ,  H01H1/0036 ,  H01H59/0009 ,  H01L23/5382 ,  H01L23/5389 ,  H01L2224/04105 ,  H01L2224/73267 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/00

摘要： A semiconductor package having a mechanical fuse therein and methods to form a semiconductor package having a mechanical fuse therein are described. For example, a semiconductor structure includes a semiconductor package. A semiconductor die is housed in the semiconductor package. A microelectromechanical system (MEMS) device is housed in the semiconductor package. The MEMS device has a suspended portion. A mechanical fuse is housed in the semiconductor package and either coupled to, or decoupled from, the suspended portion of the MEMS device.

摘要翻译： 描述了具有机械熔断器的半导体封装以及形成其中具有机械熔丝的半导体封装的方法。 例如，半导体结构包括半导体封装。 半导体管芯被容纳在半导体封装中。 微机电系统（MEMS）装置容纳在半导体封装中。 MEMS器件具有悬挂部分。 机械保险丝容纳在半导体封装中，并且耦合到MEMS器件的悬置部分或从MEMS器件的悬挂部分解耦。

公开(公告)号：US20140001583A1

公开(公告)日：2014-01-02

申请号：US13539444

申请日：2012-06-30

申请人： Weng Hong Teh ,  Zuoming Ming Zhao ,  Danny R. Singh

发明人： Weng Hong Teh ,  Zuoming Ming Zhao ,  Danny R. Singh

IPC分类号： H01L29/84 ,  H01L21/50

CPC分类号： B81B3/0005 ,  H01L24/19 ,  H01L29/84 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/0557 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/00

摘要： An apparatus including a die including a first side and an opposite second side including a device side with contact points and lateral sidewalls defining a thickness of the die; a build-up carrier coupled to the second side of the die, the build-up carrier including a plurality of alternating layers of conductive material and insulating material, wherein at least one of the layers of conductive material is coupled to one of the contact points of the die; and at least one device within the build-up carrier disposed in an area void of a layer of patterned conductive material. A method and an apparatus including a computing device including a package including a microprocessor are also disclosed.

摘要翻译： 一种包括模具的装置，包括第一侧和相对的第二侧，包括具有限定模具的厚度的接触点和侧壁的装置侧; 耦合到管芯的第二侧的积聚载体，所述堆积载体包括导电材料和绝缘材料的多个交替层，其中所述导电材料层中的至少一个耦合到所述接触点之一 的死亡 并且所述积聚载体内的至少一个装置设置在无图案化的导电材料层的区域中。 还公开了包括包括包括微处理器的封装的计算装置的方法和装置。

公开(公告)号：US20140000377A1

公开(公告)日：2014-01-02

申请号：US13536210

申请日：2012-06-28

申请人： Kevin L. Lin ,  Qing Ma ,  Feras Eid ,  Johanna Swan ,  Weng Hong Teh

发明人： Kevin L. Lin ,  Qing Ma ,  Feras Eid ,  Johanna Swan ,  Weng Hong Teh

IPC分类号： H01L29/84 ,  G01L9/00

CPC分类号： G01L9/0042 ,  B81B7/0058 ,  B81B7/0077 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/00246 ,  G01L9/0047 ,  G01L9/007 ,  G01L9/0073 ,  H01L24/19 ,  H01L29/84 ,  H01L2224/04105 ,  H01L2224/24137 ,  H01L2924/1461 ,  H01L2924/18162

摘要： A semiconductor package having an air pressure sensor and methods to form a semiconductor package having an air pressure sensor are described. For example, a semiconductor package includes a plurality of build-up layers. A cavity is disposed in one or more of the build-up layers. An air pressure sensor is disposed in the plurality of build-up layers and includes the cavity and an electrode disposed above the cavity. Also described are various approaches to fabricating a semiconductor package having a hermetically sealed region.

摘要翻译： 描述了具有空气压力传感器的半导体封装和形成具有气压传感器的半导体封装的方法。 例如，半导体封装包括多个堆积层。 空腔设置在一个或多个堆积层中。 空气压力传感器设置在多个积聚层中，并且包括空腔和设置在空腔上方的电极。 还描述了制造具有气密密封区域的半导体封装的各种方法。

公开(公告)号：US09505610B2

公开(公告)日：2016-11-29

申请号：US14129541

申请日：2013-09-25

申请人： Weng Hong Teh ,  Tarek A Ibrahim ,  Sarah K Haney ,  Daniel N Sobieski ,  Parshuram B Zantye ,  Chad E Mair ,  Telesphor Kamgaing

发明人： Weng Hong Teh ,  Tarek A Ibrahim ,  Sarah K Haney ,  Daniel N Sobieski ,  Parshuram B Zantye ,  Chad E Mair ,  Telesphor Kamgaing

IPC分类号： H01L21/00 ,  B81C1/00

CPC分类号： B81C1/00246 ,  B81B2201/0271 ,  B81C1/00261 ,  B81C1/00277 ,  H01L21/568 ,  H01L24/19 ,  H01L2224/04105 ,  H01L2224/73267 ,  H01L2924/01079

摘要： Techniques and mechanisms for providing precisely fabricated structures of a semiconductor package. In an embodiment, a build-up carrier of the semiconductor package includes a layer of porous dielectric material. Seed copper and plated copper is disposed on the layer of porous dielectric material. Subsequent etching is performed to remove copper adjacent to the layer of porous dielectric material, forming a gap separating a suspended portion of a MEMS structure from the layer of porous dielectric material. In another embodiment, the semiconductor package includes a copper structure disposed between portions of an insulating layer or portions of a layer of silicon nitride material. The layer of silicon nitride material couples the insulating layer to another insulating layer. One or both of the insulating layers are each protected from desmear processing with a respective release layer structure.

摘要翻译： 用于提供半导体封装的精确制造结构的技术和机构。 在一个实施例中，半导体封装的积聚载体包括多孔介电材料层。 种子铜和电镀铜设置在多孔电介质材料层上。 进行随后的蚀刻以去除邻近多孔介电材料层的铜，形成将MEMS结构的悬置部分与多孔介电材料层分开的间隙。 在另一个实施例中，半导体封装包括设置在绝缘层的一部分之间或者氮化硅材料层的一部分的铜结构。 氮化硅材料层将绝缘层耦合到另一绝缘层。 每个绝缘层中的一个或两个保护层不受去离子处理的剥离层结构的剥离。

公开(公告)号：US20140002178A1

公开(公告)日：2014-01-02

申请号：US13537573

申请日：2012-06-29

申请人： Weng Hong Teh ,  Kevin L. Lin ,  Feras Eid ,  Qing Ma

发明人： Weng Hong Teh ,  Kevin L. Lin ,  Feras Eid ,  Qing Ma

IPC分类号： H01L29/84 ,  H01H85/48

CPC分类号： H01L24/19 ,  H01H1/0036 ,  H01H59/0009 ,  H01L23/5382 ,  H01L23/5389 ,  H01L2224/04105 ,  H01L2224/73267 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/00

摘要： A semiconductor package having a mechanical fuse therein and methods to form a semiconductor package having a mechanical fuse therein are described. For example, a semiconductor structure includes a semiconductor package. A semiconductor die is housed in the semiconductor package. A microelectromechanical system (MEMS) device is housed in the semiconductor package. The MEMS device has a suspended portion. A mechanical fuse is housed in the semiconductor package and either coupled to, or decoupled from, the suspended portion of the MEMS device.

摘要翻译： 描述了具有机械熔断器的半导体封装以及形成其中具有机械熔丝的半导体封装的方法。 例如，半导体结构包括半导体封装。 半导体管芯被容纳在半导体封装中。 微机电系统（MEMS）装置容纳在半导体封装中。 MEMS器件具有悬挂部分。 机械保险丝容纳在半导体封装中，并且耦合到MEMS器件的悬置部分或从MEMS器件的悬挂部分解耦。

公开(公告)号：US20130284572A1

公开(公告)日：2013-10-31

申请号：US13977122

申请日：2011-12-13

申请人： Weng Hong Teh ,  Robert Bob L. Sankman

发明人： Weng Hong Teh ,  Robert Bob L. Sankman

IPC分类号： B81B3/00 ,  H01H1/00 ,  B81C1/00

CPC分类号： B81B3/0021 ,  B81B2201/014 ,  B81B2201/0235 ,  B81B2203/0118 ,  B81C1/0015 ,  G01P15/135 ,  H01H1/0036 ,  H01H1/0094 ,  H01L21/563 ,  H01L23/13 ,  H01L23/481 ,  H01L23/49816 ,  H01L24/02 ,  H01L24/05 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/92 ,  H01L25/0657 ,  H01L2223/6677 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/831 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/00

摘要： A process of forming a through-silicon via (TSV) in a die includes forming a movable member in the TSV that can be actuated or that can be a sensor. Action of the movable member in the TSV can result in a logic word being sent from the TSV die to a subsequent die. The TSV die may be embedded in a substrate. The TSV die may also be coupled to a subsequent die.

摘要翻译： 在模具中形成贯通硅通孔（TSV）的工艺包括在可被致动的TSV中形成可移动部件，或者可以是传感器。 可移动部件在TSV中的动作可导致将逻辑字从TSV管芯发送到随后的管芯。 TSV管芯可以嵌入衬底中。 TSV管芯也可以连接到随后的管芯。

公开(公告)号：US20130277837A1

公开(公告)日：2013-10-24

申请号：US13977473

申请日：2011-11-14

申请人： Weng Hong Teh ,  Shan Zhong

发明人： Weng Hong Teh ,  Shan Zhong

IPC分类号： H01L23/538 ,  H01L23/498 ,  H01L21/82

CPC分类号： H01L23/5384 ,  H01L21/82 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0331 ,  H01L2224/0346 ,  H01L2224/0348 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/81193 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2225/06548 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A process of bumping a die backside includes opening a recess in a die backside film (DBF) to expose a through-silicon via (TSV) contact in a die, followed by filling the recess with a conductive material that contacts the TSV contact. Added solder is coupled to the conductive material at a level of the DBF. A subsequent die is coupled to the first die at the added solder to form an electrical coupling consisting of the TSV contact, the conductive material, and the added solder, an electrical bump coupled to the subsequent die. Apparatus and computer systems are assembled using the process.

摘要翻译： 冲模模具背面的过程包括在模具背面薄膜（DBF）中打开凹部以暴露模具中的硅 - 硅通孔（TSV）接触，然后用与TSV触点接触的导电材料填充凹部。 添加的焊料在DBF的水平处耦合到导电材料。 随后的管芯在添加的焊料处耦合到第一管芯，以形成由TSV接触，导电材料和添加的焊料组成的电耦合，耦合到后续管芯的电凸点。 装置和计算机系统使用该过程组装。

公开(公告)号：US09708178B2

公开(公告)日：2017-07-18

申请号：US13995924

申请日：2011-12-30

申请人： Weng Hong Teh ,  Robert L. Sankman

发明人： Weng Hong Teh ,  Robert L. Sankman

IPC分类号： B81B7/02 ,  B81B7/00 ,  B81C1/00 ,  H01L23/00 ,  H05K1/18

CPC分类号： B81B7/0006 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/00134 ,  B81C1/0023 ,  H01L23/48 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/16135 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2224/82047 ,  H01L2224/821 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/15311 ,  H05K1/185 ,  H01L2924/00 ,  H01L2224/16225 ,  H01L2224/82

摘要： An apparatus including a die including a first side and an opposite second side including a device side with contact points and lateral sidewalls defining a thickness of the die; a build-up carrier coupled to the second side of the die, the build-up carrier including a plurality of alternating layers of conductive material and insulating material, wherein at least one of the layers of conductive material is coupled to one of the contact points of the die; and at least one device within the build-up carrier disposed in an area void of a layer of patterned conductive material. A method and an apparatus including a computing device including a package including a microprocessor are also disclosed.

公开(公告)号：US09429427B2

公开(公告)日：2016-08-30

申请号：US13720876

申请日：2012-12-19

申请人： Qing Ma ,  Feras Eid ,  Kevin Lin ,  Johanna M. Swan ,  Weng Hong Teh ,  Valluri R. Rao

发明人： Qing Ma ,  Feras Eid ,  Kevin Lin ,  Johanna M. Swan ,  Weng Hong Teh ,  Valluri R. Rao

IPC分类号： G01C19/00 ,  G01C19/56 ,  G01C19/5776

CPC分类号： G01C19/56 ,  G01C19/5776

摘要： This invention relates to inductive inertial sensors employing a magnetic drive and/or sense architecture. In embodiments, translational gyroscopes utilize a conductive coil made to vibrate in a first dimension as a function of a time varying current driven through the coil in the presence of a magnetic field. Sense coils register an inductance that varies as a function of an angular velocity in a second dimension. In embodiments, the vibrating coil causes first and second mutual inductances in the sense coils to deviate from each other as a function of the angular velocity. In embodiments, self-inductances associated with a pair of meandering coils vary as a function of an angular velocity in a second dimension. In embodiments, package build-up layers are utilized to fabricate the inductive inertial sensors, enabling package-level integrated inertial sensing advantageous in small form factor computing platforms, such as mobile devices.

摘要翻译： 本发明涉及采用磁驱动和/或感测架构的感应惯性传感器。 在实施例中，平移陀螺仪利用在第一维度中制成的导电线圈作为在存在磁场的情况下驱动通过线圈的时变电流的函数。 感应线圈记录在第二维度上作为角速度的函数变化的电感。 在实施例中，振动线圈使得感测线圈中的第一和第二互感器作为角速度的函数彼此偏离。 在实施例中，与一对曲折线圈相关联的自感量作为第二维度中的角速度的函数而变化。 在实施例中，使用封装积层来制造感应惯性传感器，使得能够在诸如移动设备的小尺寸计算平台中有利的封装级集成惯性感测。