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    LIGHT EMITTING DIODE
    11.
    发明申请
    LIGHT EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20110156070A1

    公开(公告)日：2011-06-30

    申请号：US12974605

    申请日：2010-12-21

    Applicant: Yeo Jin YOON ,  Won Cheol SEO

    Inventor： Yeo Jin YOON ,  Won Cheol SEO

    IPC: H01L33/00

    CPC classification number: H01L33/46 ,  H01L33/385 ,  H01L33/405 ,  H01L33/42

    Abstract: The present invention provides a light emitting diode including a lower semiconductor layer formed on a substrate; an upper semiconductor layer disposed above the lower semiconductor layer, exposing an edge region of the lower semiconductor layer; a first electrode formed on the upper semiconductor layer; an insulation layer interposed between the first electrode and the upper semiconductor layer, to supply electric current to the lower semiconductor layer; a second electrode formed on another region of the upper semiconductor layer, to supply electric current to the upper semiconductor layer. The first electrode includes an electrode pad disposed on the upper semiconductor layer and an extension extending from the electrode pad to the exposed lower semiconductor layer. The insulation layer may have a distributed Bragg reflector structure.

    Abstract translation: 本发明提供了一种发光二极管，其包括形成在基板上的下半导体层; 上半导体层，设置在所述下半导体层上方，暴露所述下半导体层的边缘区域; 形成在上半导体层上的第一电极; 介于所述第一电极和所述上半导体层之间的绝缘层，以向所述下半导体层提供电流; 形成在上半导体层的另一区域上的第二电极，以向上半导体层提供电流。 第一电极包括设置在上半导体层上的电极焊盘和从电极焊盘延伸到暴露的下半导体层的延伸部。 绝缘层可以具有分布式布拉格反射器结构。

    LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME
    13.
    发明申请
    LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号：US20110175131A1

    公开(公告)日：2011-07-21

    申请号：US13076330

    申请日：2011-03-30

    Applicant: Won Cheol SEO ,  Yun Goo KIM ,  Chang Youn KIM

    Inventor： Won Cheol SEO ,  Yun Goo KIM ,  Chang Youn KIM

    IPC: H01L33/00

    CPC classification number: H01L33/0079 ,  H01L33/387 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: There is provided a light emitting device, which comprises compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a metal reflection layer formed on a region of the second conductive semiconductor layer; an insulating structure formed at least in a boundary region of the second conductive semiconductor layer; a metal material structure formed to cover the second conductive semiconductor layer having the metal reflection layer and the insulating structure formed; and a substrate bonded to the metal material structure, wherein the boundary region of the second conductive semiconductor layer includes an outer region of the second conductive semiconductor layer along an outer circumference of the second conductive semiconductor layer.

    Abstract translation: 提供一种发光器件，其包括包括第一导电半导体层，有源层和第二导电半导体层的化合物半导体层; 形成在所述第二导电半导体层的区域上的金属反射层; 至少形成在所述第二导电半导体层的边界区域中的绝缘结构; 形成为覆盖形成有金属反射层和绝缘结构的第二导电半导体层的金属材料结构体; 以及与所述金属材料结构接合的基板，其中所述第二导电半导体层的边界区域沿着所述第二导电半导体层的外周包括所述第二导电半导体层的外部区域。

    LIGHT EMITTING DEVICE HAVING PLURALITY OF LIGHT EMITTING CELLS AND METHOD OF FABRICATING THE SAME
    15.
    发明申请
    LIGHT EMITTING DEVICE HAVING PLURALITY OF LIGHT EMITTING CELLS AND METHOD OF FABRICATING THE SAME 有权
    具有发光细胞的多重性的发光装置及其制造方法

    公开(公告)号：US20100155693A1

    公开(公告)日：2010-06-24

    申请号：US12623968

    申请日：2009-11-23

    Applicant: Won Cheol SEO

    Inventor： Won Cheol SEO

    IPC: H01L33/00 ,  H01L21/30

    CPC classification number: H01L27/153 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Disclosed are a light emitting device having a plurality of light emitting cells and a method of fabricating the same. The light emitting device comprises a plurality of light emitting cells positioned on a substrate to be spaced apart from one another. Each of the light emitting cells comprises a first conductive-type upper semiconductor layer, an active layer and a second conductive-type lower semiconductor layer. Electrodes are positioned between the substrate and the light emitting cells, and each of the electrodes has an extension extending toward adjacent one of the light emitting cells. An etching prevention layer is positioned in regions between the light emitting cells and between the electrodes. Each wire has one end connected to the upper semiconductor layer and the other end connected to the electrode through the etching prevention layer.

    Abstract translation: 公开了具有多个发光单元的发光器件及其制造方法。 发光器件包括位于衬底上以彼此间隔开的多个发光单元。 每个发光单元包括第一导电型上半导体层，有源层和第二导电型下半导体层。 电极位于基板和发光单元之间，并且每个电极具有向相邻的一个发光单元延伸的延伸。 防蚀层位于发光单元之间和电极之间的区域中。 每根导线的一端连接到上半导体层，另一端通过防蚀层与电极连接。

    LIGHT EMITTING DEVICE HAVING A PLURALITY OF NON-POLAR LIGHT EMITTING CELLS AND A METHOD OF FABRICATING THE SAME
    16.
    发明申请
    LIGHT EMITTING DEVICE HAVING A PLURALITY OF NON-POLAR LIGHT EMITTING CELLS AND A METHOD OF FABRICATING THE SAME 有权
    具有多个非极性发光电池的发光装置及其制造方法

    公开(公告)号：US20120235158A1

    公开(公告)日：2012-09-20

    申请号：US13482851

    申请日：2012-05-29

    Applicant: Kwang Choong KIM ,  Won Cheol SEO ,  Dae Won KIM ,  Dae Sung KAL ,  Kyung Hee YE

    Inventor： Kwang Choong KIM ,  Won Cheol SEO ,  Dae Won KIM ,  Dae Sung KAL ,  Kyung Hee YE

    IPC: H01L33/40

    CPC classification number: H01L33/32 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/18 ,  H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.

    Abstract translation: 本发明涉及具有多个非极性发光单元的发光器件及其制造方法。 氮化物半导体层设置在具有上表面的氮化镓衬底上。 上表面是非极性或半极性的晶体，相对于c面形成交叉角。 氮化物半导体层可以被图案化以形成彼此分离的发光单元。 当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。 凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

    LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME
    19.
    发明申请
    LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号：US20100006881A1

    公开(公告)日：2010-01-14

    申请号：US12498168

    申请日：2009-07-06

    Applicant: Won Cheol SEO ,  Yun Goo KIM ,  Chang Youn KIM

    Inventor： Won Cheol SEO ,  Yun Goo KIM ,  Chang Youn KIM

    IPC: H01L33/00 ,  H01L21/30

    CPC classification number: H01L33/0079 ,  H01L33/387 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: There is provided a light emitting device, which comprises compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a metal reflection layer formed on a region of the second conductive semiconductor layer; an insulating structure formed at least in a boundary region of the second conductive semiconductor layer; a metal material structure formed to cover the second conductive semiconductor layer having the metal reflection layer and the insulating structure formed; and a substrate bonded to the metal material structure, wherein the boundary region of the second conductive semiconductor layer includes an outer region of the second conductive semiconductor layer along an outer circumference of the second conductive semiconductor layer.

    Abstract translation: 提供一种发光器件，其包括包括第一导电半导体层，有源层和第二导电半导体层的化合物半导体层; 形成在所述第二导电半导体层的区域上的金属反射层; 至少形成在所述第二导电半导体层的边界区域中的绝缘结构; 形成为覆盖形成有金属反射层和绝缘结构的第二导电半导体层的金属材料结构体; 以及与所述金属材料结构接合的基板，其中所述第二导电半导体层的边界区域沿着所述第二导电半导体层的外周包括所述第二导电半导体层的外部区域。

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