公开(公告)号：US08475600B2

公开(公告)日：2013-07-02

申请号：US12067235

申请日：2006-10-12

Applicant: Daisuke Uenda ,  Yukio Arimitsu ,  Yoshio Terada ,  Yasuhiro Amano ,  Akihisa Murata

Inventor： Daisuke Uenda ,  Yukio Arimitsu ,  Yoshio Terada ,  Yasuhiro Amano ,  Akihisa Murata

IPC: B08B7/00 ,  B32B3/30 ,  B32B17/10

CPC classification number: B08B1/00 ,  B08B7/0028 ,  H01L21/02096 ,  Y10T428/24355 ,  Y10T428/2457 ,  Y10T428/24612 ,  Y10T428/31

Abstract: A cleaning sheet including a cleaning layer which has a microasperity shape having an arithmetic average roughness Ra of 0.05 μm or less and a maximum height Rz of 1.0 μm or less. Preferably, a substantial surface area of the cleaning layer per a flat surface of 1 mm2 is 150% or more of a substantial surface area of a silicon wafer mirror surface per a flat area of 1 mm2. The cleaning sheet may be provided on at least one surface of a transfer member so that the transfer member has a cleaning function. When the cleaning sheet or the transfer member having a cleaning function is transferred in a substrate processing apparatus in place of a substrate to be processed therein, the cleaning sheet contacts and cleans a site of the substrate processing apparatus.

公开(公告)号：US07998552B2

公开(公告)日：2011-08-16

申请号：US12529070

申请日：2008-01-28

Applicant: Yasuhiro Amano ,  Sadahito Misumi ,  Takeshi Matsumura

Inventor： Yasuhiro Amano ,  Sadahito Misumi ,  Takeshi Matsumura

IPC: H01L21/301 ,  H01L21/52

CPC classification number: H01L23/3121 ,  C08G18/4045 ,  C08G18/6254 ,  C08L33/08 ,  C09J175/04 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/274 ,  H01L2224/27436 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29371 ,  H01L2224/29386 ,  H01L2224/29393 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/8388 ,  H01L2224/83885 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06572 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/3011 ,  H01L2924/3025 ,  Y10T428/24355 ,  H01L2924/00014 ,  H01L2924/0635 ,  H01L2924/066 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05432 ,  H01L2924/0532 ,  H01L2924/04642 ,  H01L2924/05042 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

Abstract: A dicing die-bonding film in which the adhesive properties during the dicing step and the peeling properties during the pickup step are controlled so that both become good, and a production method thereof, are provided. The dicing die-bonding film in the present invention is a dicing die-bonding film having a pressure-sensitive adhesive layer on a base material and a die bond layer on the pressure-sensitive adhesive layer, in which the arithmetic mean roughness X (μm) on the pressure-sensitive adhesive layer side in the die bond layer is 0.015 μm to 1 μm, the arithmetic mean roughness Y (μm) on the die bond layer side in the pressure-sensitive adhesive layer is 0.03 μm to 1 μm, and the absolute value of the difference of the X and Y is 0.015 or more.

Abstract translation: 控制在切割步骤期间的粘合性能和拾取步骤期间的剥离性能使得两者都变得良好的切割芯片接合膜及其制备方法。 本发明的切割/芯片接合薄膜是在基材上具有压敏粘合剂层和压敏粘合剂层上的芯片接合层的切割芯片接合薄膜，其中算术平均粗糙度X（μm ）为0.015μm〜1μm，压敏粘合剂层的芯片接合层侧的算术平均粗糙度Y（μm）为0.03μm〜1μm， X和Y的差的绝对值为0.015以上。

公开(公告)号：US20110088721A1

公开(公告)日：2011-04-21

申请号：US12977762

申请日：2010-12-23

Applicant: Daisuke Uenda ,  Yukio Arimitsu ,  Yoshio Terada ,  Yasuhiro Amano ,  Akihisa Murata

Inventor： Daisuke Uenda ,  Yukio Arimitsu ,  Yoshio Terada ,  Yasuhiro Amano ,  Akihisa Murata

IPC: B08B1/00

CPC classification number: B08B1/00 ,  B08B7/0028 ,  H01L21/02096 ,  Y10T428/24355 ,  Y10T428/2457 ,  Y10T428/24612 ,  Y10T428/31

Abstract: A cleaning sheet including a cleaning layer which has a microasperity shape having an arithmetic average roughness Ra of 0.05 μm or less and a maximum height Rz of 1.0 μm or less. Preferably, a substantial surface area of the cleaning layer per a flat surface of 1 mm2 is 150% or more of a substantial surface area of a silicon wafer mirror surface per a flat area of 1 mm2. The cleaning sheet may be provided on at least one surface of a transfer member so that the transfer member has a cleaning function. When the cleaning sheet or the transfer member having a cleaning function is transferred in a substrate processing apparatus in place of a substrate to be processed therein, the cleaning sheet contacts and cleans a site of the substrate processing apparatus.

Abstract translation: 一种清洁片，包括具有0.05微米以下的算术平均粗糙度Ra和1.0微米或更小的最大高度Rz的微细凹凸形状的清洁层。 优选地，每1mm平坦表面的清洁层的基本表面积为1mm 2的平坦区域的硅晶片镜表面的基本表面积的150％或更多。 清洁片可以设置在转印构件的至少一个表面上，使得转印构件具有清洁功能。 当清洁片或具有清洁功能的转印元件在衬底处理设备中转移以代替待处理衬底时，清洁片接触并清洁衬底处理设备的位置。

公开(公告)号：US20110074050A1

公开(公告)日：2011-03-31

申请号：US12890909

申请日：2010-09-27

Applicant: Yasuhiro Amano ,  Yuuichirou Shishido ,  Kouichi Inoue

Inventor： Yasuhiro Amano ,  Yuuichirou Shishido ,  Kouichi Inoue

IPC: B32B33/00 ,  H01L29/00

CPC classification number: H01L21/67132 ,  Y10T428/14

Abstract: The present invention provides a film for a semiconductor device, which is capable of preventing interface delamination between each of the films, a film lifting phenomenon, and transfer of the adhesive film onto the cover film even during transportation or after long-term storage in a low temperature condition. The film for a semiconductor device of the present invention is a film in which an adhesive film and a cover film are sequentially laminated on a dicing film, in which a peel force F1 between the adhesive film and the cover film in a T type peeling test is within a range of 0.025 to 0.075 N/100 mm, a peel force F2 between the adhesive film and the dicing film is within a range of 0.08 to 10 N/100 mm, and F1 and F2 satisfy a relationship of F1

Abstract translation: 本发明提供一种半导体装置用薄膜，其能够防止各膜之间的界面分层，膜提起现象，以及即使在运输过程中或长期储存后也将胶粘剂膜转印到覆盖膜上 低温条件。 本发明的半导体装置用薄膜是将粘接薄膜和覆盖薄膜依次层叠在切断薄膜上的薄膜，在T型剥离试验中粘合薄膜与覆盖薄膜的剥离力F1 在0.025〜0.075N / 100mm的范围内，粘合膜与切割膜之间的剥离力F2在0.08〜10N / 100mm的范围内，F1和F2满足F1

公开(公告)号：US20100119759A1

公开(公告)日：2010-05-13

申请号：US12593004

申请日：2007-10-22

Applicant: Hiroyuki Kondo ,  Yasuhiro Amano

Inventor： Hiroyuki Kondo ,  Yasuhiro Amano

IPC: B32B27/04

CPC classification number: H01L21/6835 ,  C08L9/02 ,  C08L2666/08 ,  C09J163/00 ,  H01L21/4828 ,  H01L21/568 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/49541 ,  H01L24/31 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/181 ,  H01L2924/20752 ,  Y10T428/1405 ,  Y10T428/1452 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: An adhesive film for manufacturing a semiconductor device, which is to be finally removed in the method for manufacturing a semiconductor device, can be suitably used in the manufacture of a semiconductor device having a so-called standoff, wherein a part of a conductor projects from an encapsulation resin, and has excellent wire bonding property. The adhesive film includes a thermosetting adhesive layer, and the thermosetting adhesive layer includes a layered clay mineral, wherein the adhesive film is used in a method for manufacturing a semiconductor device including (a) embedding at least a part of a conductor in the adhesive film; (b) mounting a semiconductor chip on the conductor; (c) connecting the semiconductor chip to the conductor; (d) encapsulating the semiconductor chip with an encapsulation resin; and (e) removing the adhesive film therefrom.

Abstract translation: 用于制造半导体器件的粘合膜，其在半导体器件的制造方法中最终被去除，可以适用于制造具有所谓的间隔的半导体器件，其中导体的一部分从 封装树脂，并且具有优异的引线接合性能。 粘合膜包括热固性粘合剂层，并且热固性粘合剂层包括层状粘土矿物，其中粘合膜用于制造半导体器件的方法中，所述方法包括（a）将至少一部分导体嵌入粘合膜中 ; （b）将半导体芯片安装在导体上; （c）将半导体芯片连接到导体; （d）用封装树脂封装半导体芯片; 和（e）从其中除去粘合剂膜。

公开(公告)号：US20100319151A1

公开(公告)日：2010-12-23

申请号：US12851797

申请日：2010-08-06

Applicant: Makoto Namikawa ,  Yoshio Terada ,  Jirou Nukaga ,  Eiji Toyoda ,  Hirofumi Fujii ,  Daisuke Uenda ,  Asami Funatsu ,  Nobuaki Maruoka ,  Hitoshi Ishizaka ,  Yasuhiro Amano

Inventor： Makoto Namikawa ,  Yoshio Terada ,  Jirou Nukaga ,  Eiji Toyoda ,  Hirofumi Fujii ,  Daisuke Uenda ,  Asami Funatsu ,  Nobuaki Maruoka ,  Hitoshi Ishizaka ,  Yasuhiro Amano

IPC: A47L25/00

CPC classification number: B08B1/00 ,  B08B7/00 ,  B08B7/0028 ,  Y10T428/2848 ,  Y10T428/31721

Abstract: A cleaning sheet for cleaning foreign matters away from the interior of the substrate processing equipment is provided. The cleaning sheet includes a cleaning layer having substantially no tackiness and having a tensile modulus of not lower than 0.98 N/mm2 as determined according to JIS K7127. Alternatively, the cleaning sheet includes a cleaning layer having a Vickers hardness of not lower than 10 MPa.

Abstract translation: 提供了一种用于清除离开基板处理设备内部的异物的清洁片。 清洁片包括基本上没有粘性并且根据JIS K7127测定的拉伸模量不低于0.98N / mm 2的清洁层。 或者，清洁片包括维氏硬度不低于10MPa的清洁层。

公开(公告)号：US20100236689A1

公开(公告)日：2010-09-23

申请号：US12675433

申请日：2008-08-26

Applicant: Yasuhiro Amano ,  Sadahito Misumi ,  Takeshi Matsumura ,  Naohide Takamoto

Inventor： Yasuhiro Amano ,  Sadahito Misumi ,  Takeshi Matsumura ,  Naohide Takamoto

IPC: C09J7/00 ,  B32B37/12

CPC classification number: C09J133/08 ,  C09J7/35 ,  C09J7/385 ,  C09J11/04 ,  H01L23/24 ,  H01L23/3121 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T156/10 ,  Y10T428/249921 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512

Abstract: The present invention provides an adhesive sheet for manufacturing a semiconductor device, which, even when the adhesive sheet is made thin, makes it possible to easily identify the presence or absence of the adhesive sheet, thereby decreasing down time for the manufacturing apparatus and enabling an improvement of the yield, and to provide a semiconductor device manufacturing method using the sheet. The present invention relates to an adhesive sheet for manufacturing a semiconductor device which is used to adhere a semiconductor element to an adherend, wherein the adhesive sheet contains a pigment which adsorbs or reflects light having a wavelength in a range from 290 to 450 nm.

Abstract translation: 本发明提供一种用于制造半导体器件的粘合片，即使当粘合片变薄时，也可以容易地识别粘合片的存在或不存在，从而减少制造装置的停留时间并使得能够 提高产量，并提供使用该片材的半导体器件制造方法。 本发明涉及一种用于制造用于将半导体元件粘合到被粘物上的半导体器件的粘合片，其中该粘合片含有吸收或反射波长在290至450nm范围内的光的颜料。

公开(公告)号：US20100047968A1

公开(公告)日：2010-02-25

申请号：US12519510

申请日：2007-12-13

Applicant: Yasuhiro Amano ,  Yoshio Terada ,  Naohide Takamoto

Inventor： Yasuhiro Amano ,  Yoshio Terada ,  Naohide Takamoto

IPC: H01L21/78 ,  C08K3/36 ,  B32B5/16

CPC classification number: C09J133/04 ,  B32B7/12 ,  B32B27/08 ,  B32B27/18 ,  B32B27/281 ,  B32B27/308 ,  B32B27/32 ,  B32B27/36 ,  B32B27/365 ,  B32B27/38 ,  B32B27/42 ,  B32B2262/101 ,  B32B2264/107 ,  B32B2270/00 ,  B32B2307/202 ,  B32B2307/306 ,  B32B2307/54 ,  B32B2457/00 ,  C08F220/18 ,  C08K3/346 ,  C08K9/04 ,  C08L33/06 ,  C08L33/08 ,  C08L51/003 ,  C08L61/00 ,  C08L63/00 ,  C08L2666/02 ,  C08L2666/14 ,  C08L2666/16 ,  C08L2666/22 ,  C09J11/04 ,  C09J133/08 ,  C09J151/003 ,  C09J163/00 ,  C09J2203/326 ,  H01L21/6836 ,  H01L23/24 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83885 ,  H01L2224/85001 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/20305 ,  H01L2924/20752 ,  H01L2924/3011 ,  Y10T428/259 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/2075

Abstract: The present invention relates to an adhesive sheet for producing a semiconductor device, which is used when a semiconductor element is caused to adhere onto an adherend and the semiconductor element is wire-bonded, in which a lipophilic lamellar clay mineral is contained.

Abstract translation: 本发明涉及一种用于制造半导体器件的粘合片，当将半导体元件粘附到被粘物上并且半导体元件被引线接合时使用，其中包含亲油性层状粘土矿物。

公开(公告)号：US20090263153A1

公开(公告)日：2009-10-22

申请号：US12067235

申请日：2006-10-12

Applicant: Daisuke Uenda ,  Yukio Arimitsu ,  Yoshio Terada ,  Yasuhiro Amano ,  Akihisa Murata

Inventor： Daisuke Uenda ,  Yukio Arimitsu ,  Yoshio Terada ,  Yasuhiro Amano ,  Akihisa Murata

IPC: G03G21/00 ,  B32B3/00

CPC classification number: B08B1/00 ,  B08B7/0028 ,  H01L21/02096 ,  Y10T428/24355 ,  Y10T428/2457 ,  Y10T428/24612 ,  Y10T428/31

Abstract: There are provided a transfer member provided with a cleaning function, which have excellent foreign matter removing performance and transfer performance, and which can remove foreign matters having a predetermined particle diameter with especially high efficiency.The transfer member provided with a cleaning function includes a transfer member and the cleaning layer provided on at least one surface of the transfer member. The cleaning layer has a microasperity shape having an arithmetic average roughness Ra of 0.05 μm or less and a maximum height Rz of 1.0 μm or less. Preferably, a substantial surface area of the cleaning layer per a flat surface of 1 mm2 is 150% or more of a substantial surface area of a silicon wafer mirror surface per a flat area of 1 mm2.

Abstract translation: 提供具有清除功能的转印构件，其具有优异的异物去除性能和转印性能，并且可以以特别高的效率去除具有预定粒径的异物。 设置有清洁功能的传送构件包括传送构件和设置在传送构件的至少一个表面上的清洁层。 清洁层具有0.05微米以下的算术平均粗糙度Ra和1.0μm以下的最大高度Rz的微细度形状。 优选地，每1mm平坦表面的清洁层的基本表面积为1mm 2的平坦区域的硅晶片镜表面的基本表面积的150％或更多。

公开(公告)号：US07575812B2

公开(公告)日：2009-08-18

申请号：US11252800

申请日：2005-10-19

Applicant: Yoshio Terada ,  Hirofumi Fujii ,  Makoto Namikawa ,  Daisuke Uenda ,  Yasuhiro Amano

Inventor： Yoshio Terada ,  Hirofumi Fujii ,  Makoto Namikawa ,  Daisuke Uenda ,  Yasuhiro Amano

IPC: B32B27/06 ,  B32B7/12 ,  B08B7/00

CPC classification number: B32B27/28 ,  B32B27/06 ,  B32B27/34 ,  B32B27/36 ,  B32B2307/31 ,  B32B2307/54 ,  B32B2432/00 ,  Y10T428/28 ,  Y10T428/2896 ,  Y10T428/31504 ,  Y10T428/31721

Abstract: The present invention provides a cleaning substrate of a substrate processing equipment, which comprises a cleaning layer comprising a heat resistant resin with a storage modulus (1 Hz) at 20° C. up to 150° C. being 5×107 Pa to 1×109 Pa on at least one face of the substrate; and a polyimide resin suitable as the heat resistant resin for the cleaning layer and usable under circumstances possibly involving the generation of serious disadvantages due to silicone contamination, such as for HDD application and some semiconductor applications.

Abstract translation: 本发明提供了一种基板处理设备的清洁基板，其包括在20℃至150℃下具有储能模量（1Hz）的耐热树脂的清洁层，为5×10 7 Pa至1×10 9 Pa 底物的至少一个面; 以及适合用作清洁层的耐热树脂的聚酰亚胺树脂，并且可用于可能涉及由于硅氧烷污染而产生严重缺点的环境，例如用于HDD应用和一些半导体应用。