公开(公告)号：US20100047968A1

公开(公告)日：2010-02-25

申请号：US12519510

申请日：2007-12-13

申请人： Yasuhiro Amano ,  Yoshio Terada ,  Naohide Takamoto

发明人： Yasuhiro Amano ,  Yoshio Terada ,  Naohide Takamoto

IPC分类号： H01L21/78 ,  C08K3/36 ,  B32B5/16

CPC分类号： C09J133/04 ,  B32B7/12 ,  B32B27/08 ,  B32B27/18 ,  B32B27/281 ,  B32B27/308 ,  B32B27/32 ,  B32B27/36 ,  B32B27/365 ,  B32B27/38 ,  B32B27/42 ,  B32B2262/101 ,  B32B2264/107 ,  B32B2270/00 ,  B32B2307/202 ,  B32B2307/306 ,  B32B2307/54 ,  B32B2457/00 ,  C08F220/18 ,  C08K3/346 ,  C08K9/04 ,  C08L33/06 ,  C08L33/08 ,  C08L51/003 ,  C08L61/00 ,  C08L63/00 ,  C08L2666/02 ,  C08L2666/14 ,  C08L2666/16 ,  C08L2666/22 ,  C09J11/04 ,  C09J133/08 ,  C09J151/003 ,  C09J163/00 ,  C09J2203/326 ,  H01L21/6836 ,  H01L23/24 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83885 ,  H01L2224/85001 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/20305 ,  H01L2924/20752 ,  H01L2924/3011 ,  Y10T428/259 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/2075

摘要： The present invention relates to an adhesive sheet for producing a semiconductor device, which is used when a semiconductor element is caused to adhere onto an adherend and the semiconductor element is wire-bonded, in which a lipophilic lamellar clay mineral is contained.

摘要翻译： 本发明涉及一种用于制造半导体器件的粘合片，当将半导体元件粘附到被粘物上并且半导体元件被引线接合时使用，其中包含亲油性层状粘土矿物。

公开(公告)号：US07611926B2

公开(公告)日：2009-11-03

申请号：US12040775

申请日：2008-02-29

申请人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano ,  Masami Oikawa ,  Tsubasa Miki

发明人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano ,  Masami Oikawa ,  Tsubasa Miki

IPC分类号： H01L21/58 ,  H01L23/14

CPC分类号： H01L24/83 ,  H01L21/6836 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2224/05599 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/83885 ,  H01L2224/85001 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/0635 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： The thermosetting die bonding film of the invention is a thermosetting die bonding film used to produce a semiconductor device, which contains, as main components, 5 to 15% by weight of a thermoplastic resin component and 45 to 55% by weight of a thermosetting resin component, and has a melt viscosity of 400 Pa·s or more and 2500 Pa·s or less at 100° C. before the film is thermally set.

摘要翻译： 本发明的热固性芯片接合薄膜是用于制造半导体器件的热固性芯片接合薄膜，其以主要成分为5〜15重量％的热塑性树脂成分和45〜55重量％的热硬化性树脂 并且在热固化膜之前，在100℃下具有400Pa.s以上且2500Pa·s以下的熔融粘度。

公开(公告)号：US20100236689A1

公开(公告)日：2010-09-23

申请号：US12675433

申请日：2008-08-26

申请人： Yasuhiro Amano ,  Sadahito Misumi ,  Takeshi Matsumura ,  Naohide Takamoto

发明人： Yasuhiro Amano ,  Sadahito Misumi ,  Takeshi Matsumura ,  Naohide Takamoto

IPC分类号： C09J7/00 ,  B32B37/12

CPC分类号： C09J133/08 ,  C09J7/35 ,  C09J7/385 ,  C09J11/04 ,  H01L23/24 ,  H01L23/3121 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T156/10 ,  Y10T428/249921 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512

摘要： The present invention provides an adhesive sheet for manufacturing a semiconductor device, which, even when the adhesive sheet is made thin, makes it possible to easily identify the presence or absence of the adhesive sheet, thereby decreasing down time for the manufacturing apparatus and enabling an improvement of the yield, and to provide a semiconductor device manufacturing method using the sheet. The present invention relates to an adhesive sheet for manufacturing a semiconductor device which is used to adhere a semiconductor element to an adherend, wherein the adhesive sheet contains a pigment which adsorbs or reflects light having a wavelength in a range from 290 to 450 nm.

摘要翻译： 本发明提供一种用于制造半导体器件的粘合片，即使当粘合片变薄时，也可以容易地识别粘合片的存在或不存在，从而减少制造装置的停留时间并使得能够 提高产量，并提供使用该片材的半导体器件制造方法。 本发明涉及一种用于制造用于将半导体元件粘合到被粘物上的半导体器件的粘合片，其中该粘合片含有吸收或反射波长在290至450nm范围内的光的颜料。

公开(公告)号：USD589473S1

公开(公告)日：2009-03-31

申请号：US29293537

申请日：2007-11-30

申请人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano

设计人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano

公开(公告)号：US20080213943A1

公开(公告)日：2008-09-04

申请号：US12040775

申请日：2008-02-29

申请人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano ,  Masami Oikawa ,  Tsubasa Miki

发明人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano ,  Masami Oikawa ,  Tsubasa Miki

IPC分类号： H01L21/58 ,  H01B1/12

CPC分类号： H01L24/83 ,  H01L21/6836 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2224/05599 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/83885 ,  H01L2224/85001 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/0635 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： The thermosetting die bonding film of the invention is a thermosetting die bonding film used to produce a semiconductor device, which contains, as main components, 5 to 15% by weight of a thermoplastic resin component and 45 to 55% by weight of a thermosetting resin component, and has a melt viscosity of 400 Pa·s or more and 2500 Pa·s or less at 100° C. before the film is thermally set.

摘要翻译： 本发明的热固性芯片接合薄膜是用于制造半导体器件的热固性芯片接合薄膜，其以主要成分为5〜15重量％的热塑性树脂成分和45〜55重量％的热硬化性树脂 并且在热固化膜之前，在100℃下具有400Pa.s以上且2500Pa·s以下的熔融粘度。

公开(公告)号：US09911683B2

公开(公告)日：2018-03-06

申请号：US13642325

申请日：2011-04-18

申请人： Naohide Takamoto ,  Goji Shiga

发明人： Naohide Takamoto ,  Goji Shiga

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/683 ,  H01L21/50 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L23/544

CPC分类号： H01L23/48 ,  H01L21/50 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2223/54486 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81815 ,  H01L2224/8191 ,  H01L2224/83862 ,  H01L2224/92125 ,  H01L2924/01019 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/3512

摘要： The film for back surface of flip-chip semiconductor according to the present invention is a film for back surface of flip-chip semiconductor to be formed on a back surface of a semiconductor element having been flip-chip connected onto an adherend, wherein a tensile storage elastic modulus at 23° C. after thermal curing is 10 GPa or more and not more than 50 GPa. According to the film for back surface of flip-chip semiconductor of the present invention, since it is formed on the back surface of a semiconductor element having been flip-chip connected onto an adherend, it fulfills a function to protect the semiconductor element. In addition, since the film for back surface of flip-chip semiconductor according to the present invention has a tensile storage elastic modulus at 23° C. after thermal curing of 10 GPa or more, a warp of the semiconductor element generated at the time of flip-chip connection of a semiconductor element onto an adherend can be effectively suppressed or prevented.

公开(公告)号：US09293387B2

公开(公告)日：2016-03-22

申请号：US13191791

申请日：2011-07-27

申请人： Yusuke Komoto ,  Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

发明人： Yusuke Komoto ,  Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

IPC分类号： H01L21/56 ,  H01L23/31 ,  H01L21/683 ,  C09J163/00 ,  H01L23/00

CPC分类号： H01L23/3157 ,  C09J163/00 ,  H01L21/563 ,  H01L21/6836 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/68386 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/73204 ,  H01L2224/81007 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/31504 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2224/13099 ,  H01L2924/00

摘要： The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, in which the film for flip chip type semiconductor back surface before thermal curing has, at the thermal curing thereof, a volume contraction ratio within a range of 23° C. to 165° C. of 100 ppm/° C. to 400 ppm/° C.

摘要翻译： 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，该薄膜形成在半导体元件倒装芯片的背面上，该半导体元件倒装芯片连接到被粘物上，其中在热固化之前用于倒装芯片型半导体背表面的膜， 其热固化，体积收缩率在23℃至165℃的范围内为100ppm /℃至400ppm /℃。

公开(公告)号：US08986486B2

公开(公告)日：2015-03-24

申请号：US13170581

申请日：2011-06-28

申请人： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

发明人： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

IPC分类号： B32B38/04 ,  C09J7/02 ,  H01L21/56 ,  H01L21/683 ,  H01L23/29 ,  H01L23/31 ,  H01L23/00 ,  H01L23/544

CPC分类号： H01L21/6836 ,  B32B37/1284 ,  B32B38/0004 ,  B32B38/10 ,  B32B2405/00 ,  B32B2457/14 ,  C09J7/20 ,  C09J165/00 ,  C09J2201/606 ,  C09J2203/326 ,  C09J2461/00 ,  C09J2463/00 ,  H01L21/561 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3164 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2221/68336 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2223/54406 ,  H01L2223/5442 ,  H01L2223/5448 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/27003 ,  H01L2224/27436 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29386 ,  H01L2224/73204 ,  H01L2224/81095 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/8191 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92 ,  H01L2224/92125 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2924/15788 ,  Y10T156/1052 ,  Y10T156/1064 ,  Y10T156/1075 ,  Y10T156/1077 ,  Y10T156/1082 ,  Y10T156/1093 ,  Y10T428/1471 ,  Y10T428/1476 ,  Y10T428/1495 ,  Y10T428/15 ,  Y10T428/21 ,  H01L21/78 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2224/13099

摘要： The present invention relates to a film for semiconductor device production, which includes: a separator; and a plurality of adhesive layer-attached dicing tapes each including a dicing tape and an adhesive layer laminated on the dicing tape, which are laminated on the separator at a predetermined interval in such a manner that the adhesive layer attaches to the separator, in which the separator has a cut formed along the outer periphery of the dicing tape, and the depth of the cut is at most ⅔ of the thickness of the separator.

摘要翻译： 本发明涉及一种用于半导体器件生产的膜，其包括：隔板; 以及多个粘附层附着的切割带，每个粘合剂层附着的切割带包括层合在切割带上的切割带和粘合剂层，它们以预定的间隔层压在隔板上，使得粘合剂层附着到隔板上，其中 分离器具有沿着切割带的外周形成的切口，并且切割深度为隔板的厚度的至多。。

公开(公告)号：US08896134B2

公开(公告)日：2014-11-25

申请号：US13642325

申请日：2011-04-18

申请人： Naohide Takamoto ,  Goji Shiga

发明人： Naohide Takamoto ,  Goji Shiga

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/683 ,  H01L21/78 ,  H01L21/50 ,  H01L23/00 ,  H01L23/31 ,  H01L23/544

摘要： The film for back surface of flip-chip semiconductor according to the present invention is a film for back surface of flip-chip semiconductor to be formed on a back surface of a semiconductor element having been flip-chip connected onto an adherend, wherein a tensile storage elastic modulus at 23° C. after thermal curing is 10 GPa or more and not more than 50 GPa. According to the film for back surface of flip-chip semiconductor of the present invention, since it is formed on the back surface of a semiconductor element having been flip-chip connected onto an adherend, it fulfills a function to protect the semiconductor element. In addition, since the film for back surface of flip-chip semiconductor according to the present invention has a tensile storage elastic modulus at 23° C. after thermal curing of 10 GPa or more, a warp of the semiconductor element generated at the time of flip-chip connection of a semiconductor element onto an adherend can be effectively suppressed or prevented.

公开(公告)号：US08513816B2

公开(公告)日：2013-08-20

申请号：US13173226

申请日：2011-06-30

申请人： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

发明人： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

IPC分类号： H01L23/48 ,  H01L21/50 ,  C09K5/00 ,  B32B7/12 ,  B32B3/00

CPC分类号： C08K3/22 ,  C08K2201/001 ,  C08K2201/005 ,  C09J163/00 ,  H01L21/563 ,  H01L21/6836 ,  H01L23/293 ,  H01L23/295 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/68377 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/81007 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81815 ,  H01L2224/83022 ,  H01L2224/83102 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/24355 ,  Y10T428/2848 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/00

摘要： The present invention relates to a film for flip chip type semiconductor back surface, which is to be disposed on the back surface of a semiconductor element to be flip chip-connected onto an adherend, the film containing a resin and a thermoconductive filler, in which the content of the thermoconductive filler is at least 50% by volume of the film, and the thermoconductive filler has an average particle size relative to the thickness of the film of at most 30% and has a maximum particle size relative to the thickness of the film of at most 80%.

摘要翻译： 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，其将被设置在半导体元件的背面上以便倒装芯片连接到被粘物上，该薄膜含有树脂和导热填料，其中 导电填料的含量至少为膜的50体积％，并且导热填料相对于膜厚度的平均粒径为至多30％，并且具有相对于膜的厚度的最大粒径 电影最多80％。